Abstract:
Particle-optical apparatus are normally embodied with a magnetic or electrostatic lens so as to focus a beam 1 of charged particles onto a sample 8. It is desirable to be able to use these apparatus at different beam energies. It is, however, undesirable that the focus position 9 of the beam, as a result hereof, should shift with respect to the sample 8. Use of a permanent-magnetic material 6 in a magnetic lens has advantages as regards compact construction, but is normally avoided because it is not easily possible to adjust the lens power to match varying beam energies. The invention shows how it is possible to keep constant the focus position 9, independent of the energy of the particles in the beam 1, by combining a magnetic lens—that has been furnished with permanent-magnetic material—with an electrostatic lens. The electrostatic lens is embodied in that case as an accelerating lens.
Abstract:
Embodiments comprise a system created through fabricating a lens array through which lasers are emitted. The lens array may be fabricated in the semiconductor substrate used for fabricating the lasers or may be a separate substrate of other transparent material that would be aligned to the lasers. In some embodiments, more lenses may be produced than will eventually be used by the lasers. The inner portion of the substrate may be formed with the lenses that will be used for emitting lasers, and the outer portion of the substrate may be formed with lenses that will not be used for emitting lasers—rather, through etching these additional lenses, the inner lenses may be created with a higher quality.
Abstract:
Embodiments comprise a system created through fabricating a lens array through which lasers are emitted. The lens array may be fabricated in the semiconductor substrate used for fabricating the lasers or may be a separate substrate of other transparent material that would be aligned to the lasers. In some embodiments, more lenses may be produced than will eventually be used by the lasers. The inner portion of the substrate may be formed with the lenses that will be used for emitting lasers, and the outer portion of the substrate may be formed with lenses that will not be used for emitting lasers—rather, through etching these additional lenses, the inner lenses may be created with a higher quality.
Abstract:
An electron microscope has a large depth of focus in comparison with an optical microscope. Thus, information is superimposed on one image in the direction of depth. Therefore, it is necessary to accurately specify the three-dimensional position and density of a structure in a specimen so as to observe the three-dimensional structure of the interior of the specimen by using the electron microscope. Furthermore, a specimen that is observed with the optical microscope on a slide glass is not put into a TEM device of the related art. Thus, performing three-dimensional internal structure observation with the electron microscope on a location that is observed with the optical microscope requires very cumbersome preparation of the specimen. By controlling a vector parameter that defines the interrelationship between a primary charged particle beam and the specimen and by irradiation with the primary charged particle beam with a plurality of different vector parameters, images of transmitted charged particles of the specimen that correspond to each of the vector parameters are obtained. Irradiation with the primary charged particle beam is performed on the specimen that is arranged either directly or through a predetermined member on a detector which detects charged particles transmitted through or scattered by the interior of the specimen.
Abstract:
A charged particle beam device (1) includes a charged particle optical lens barrel (10), a support housing (20) equipped with the charged particle optical lens barrel (10) thereon, and an insertion housing (30) inserted in the support housing (20). A first aperture member (15) is disposed in the vicinity of the center of the magnetic field of an objective lens, and a second aperture member (15) is disposed so as to externally close an opening part provided at the upper side of the insertion housing (30). Further, when a primary charged particle beam (12) is irradiated to a sample (60) arranged under the lower side of the second aperture member (31), secondary charged particles thus emitted are detected by a detector (16).
Abstract:
An electron beam device for inspecting a target substrate or specimen thereon includes a beam separator with an asymmetric quadrupole electrostatic deflector for improving field uniformity for a single direction of deflection. The asymmetric quadrupole electrostatic deflector includes two orthogonal electrode plates spanning roughly 60 degrees and two electrode plates spanning roughly 120 degrees, the two latter plates defining a unidirectional deflection field. The device generates a primary electron beam and focuses the primary electron beam along an optical axis into the target substrate. Secondary electrons detected at the target substrate are focused into a secondary electron beam. The beam separator with asymmetric quadrupole electrostatic deflector deflects the secondary electron beam away from the axis of the primary electron beam in the direction of deflection and into a detector array.
Abstract:
In some aspects, an ion implantation system is disclosed that includes an ion source for generating a ribbon ion beam and at least one corrector device for adjusting the current density of the ribbon ion beam along its longitudinal dimension to ensure that the current density profile exhibits a desired uniformity. The ion implantation system can further include other components, such as an analyzer magnet, and electrostatic bend and focusing lenses, to shape and steer the ion beam to an end station for impingement on a substrate. In some embodiments, the present teachings allows the generation of a nominally one-dimensional ribbon beam with a longitudinal size greater than the diameter of a substrate in which ions are implanted with a high degree of longitudinal profile uniformity.
Abstract:
The present invention provides a dual-beam apparatus which employs the dark-field e-beam inspection method to inspect small particles on a surface of a sample such as wafer and mask with high throughput. The dual beam apparatus comprises two single-beam dark-field units placed in a same vacuum chamber and in two different orientations. The two single-beam dark-field units can perform the particle inspection separately or almost simultaneously by means of the alternately-scanning way. The invention also proposes a triple-beam apparatus for both inspecting and reviewing particles on a sample surface within the same vacuum chamber. The triple-beam apparatus comprises one foregoing dual-beam apparatus performing the particle inspection and one high-resolution SEM performing the particle review.
Abstract:
An image acquisition method and system for use in transmission electron microscopy and capable of providing information about a wide range of frequency range. The method is initiated with setting at least one of the spherical aberration coefficient and chromatic aberration coefficient of the imaging system of the microscope to suppress attenuation of a contrast transfer function due to an envelope function. Then, an image is obtained by the imaging system placed in defocus conditions.
Abstract:
A focused ion beam system is offered which can make a focal adjustment without relying on the structure of a sample while suppressing damage to the sample to a minimum. Also, a method of making this focal adjustment is offered. The focused ion beam system has an ion source for producing an ion beam, a lens system for focusing the beam onto the sample, a detector for detecting secondary electrons emanating from the sample, and a controller for controlling the lens system. The controller is operative to provide control such that the sample is irradiated with the ion beam without scanning the beam and that a focus of the ion beam is varied by varying the intensity of the objective lens during the ion beam irradiation. Also, the controller measures the intensity of a signal indicating secondary electrons emanating from the sample while the intensity of the objective lens is being varied. Furthermore, the controller makes a focal adjustment of the ion beam on the basis of the intensity of the objective lens obtained when the measured intensity of the signal indicating secondary electrons is minimal.