Abstract:
A packaged MEMS device may include an embedding arrangement, a MEMS device disposed in the embedding arrangement, a sound port disposed in the embedding arrangement and acoustically coupled to the MEMS device, and a grille within the sound port. Some embodiments relate to a sound transducer component including an embedding material and a substrate-stripped MEMS die embedded into the embedding material. The MEMS die may include a diaphragm for sound transduction. The sound transducer component may further include a sound port within the embedding material in fluidic or acoustic contact with the diaphragm. Further embodiments relate to a method for packaging a MEMS device or to a method for manufacturing a sound transducer component.
Abstract:
A semiconductor power arrangement includes a chip carrier having a first surface and a second surface opposite the first surface. The semiconductor power arrangement further includes a plurality of power semiconductor chips attached to the chip carrier, wherein the power semiconductor chips are inclined to the first and/or second surface of the chip carrier.
Abstract:
A semiconductor assembly is described. In accordance with one example of the invention, the semiconductor assembly comprises a semiconductor body, a top main electrode arranged on a top side, a bottom main electrode arranged on an underside, and a control electrode arranged on the top side. The semiconductor assembly further includes a spring element for the pressure contacting of the control electrode with a pressure force generated by the spring element.
Abstract:
A method for manufacturing a chip arrangement, including disposing a chip over a carrier, wherein the bottom side of the chip is electrically connected to the first carrier side via one or more contact pads on the chip bottom side, disposing a first encapsulation material over the first carrier side, wherein the first encapsulation material at least partially surrounds the chip, and disposing a second encapsulation material over a second carrier side, wherein the second encapsulation material is in direct contact with the second carrier side.
Abstract:
In various embodiments, a chip arrangement is provided. The chip arrangement may include a chip carrier and a chip mounted on the chip carrier. The chip may include at least two chip contacts and an insulating adhesive between the chip and the chip carrier to adhere the chip to the chip carrier. The at least two chip contacts may be electrically coupled to the chip carrier.
Abstract:
A method of forming a thinned encapsulated chip structure, wherein the method comprises providing a separation structure arranged within an electronic chip, encapsulating part of the electronic chip by an encapsulating structure, and thinning selectively the electronic chip partially encapsulated by the encapsulating structure so that the encapsulating structure remains with a larger thickness than the thinned electronic chip, wherein the separation structure functions as a thinning stop.
Abstract:
An arrangement is provided. The arrangement may include: a die including at least one electronic component and a first terminal on a first side of the die and a second terminal on a second side of the die opposite the first side, wherein the first side being the main processing side of the die, and the die further including at least a third terminal on the second side; a first electrically conductive structure providing current flow from the third terminal on second side of the die to the first side through the die; a second electrically conductive structure on the first side of the die laterally coupling the second terminal with the first electrically conductive structure; and an encapsulation material disposed at least over the first side of the die covering the first terminal and the second electrically conductive structure.
Abstract:
The semiconductor module includes a carrier, a plurality of semiconductor transistor chips disposed on the carrier, a plurality of semiconductor diode chips disposed on the carrier, an encapsulation layer disposed above the semiconductor transistor chips and the semiconductor diode chips, and a metallization layer disposed above the encapsulation layer. The metallization layer includes a plurality of metallic areas forming electrical connections between selected ones of the semiconductor transistor chips and the semiconductor diode chips.
Abstract:
An embedded chip package is provided. The embedded chip package includes a plurality of chips; encapsulation material embedding the plurality of chips; at least one electrical redistribution layer electrically connected to the plurality of chips; and a common terminal connected to the at least one electrical redistribution layer, wherein the common terminal provides an interface to at least one of transmit and receive a common electrical signal between the plurality of chips and the common terminal.
Abstract:
In various embodiments, an arrangement is provided. The arrangement may include a plurality of chips; a chip carrier carrying the plurality of chips, the chip carrier including a chip carrier notch; and encapsulation material encapsulating the chip carrier and filling the chip carrier notch; wherein the outer circumference of the encapsulation material is free from a recess.