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    Surgical stapler with sound producing mechanism to signal the completion of the stapling process
    45.
    发明授权
    Surgical stapler with sound producing mechanism to signal the completion of the stapling process 有权
    具有声音产生机构的手术吻合器用于发信号完成装订过程

    公开(公告)号：US07458494B2

    公开(公告)日：2008-12-02

    申请号：US11357814

    申请日：2006-02-21

    申请人： Kanji Matsutani ,  Masatoshi Fukuda ,  Toshiharu Kamei ,  Takashi Ina

    发明人： Kanji Matsutani ,  Masatoshi Fukuda ,  Toshiharu Kamei ,  Takashi Ina

    IPC分类号： A61B17/068

    CPC分类号： A61B17/0684 ,  A61B34/76 ,  A61B2090/0811

    摘要： A surgical stapler has a body capable of containing a plurality of staples in an aligned state; a ram provided inside the body, having a central concave portion and pressure armatures on both sides of the concave portion; an anvil that, when the armatures of the ram contact both sides of a crown of a staple, forces the center of the crown into the concave portion of the ram; and a trigger rotatably supported on the body so as to cause relative movement between the ram and the anvil. The trigger as a moving member and the body as another member strike each other so as to produce a sound and/or a vibration indicating that a staple sandwiched between the ram and the anvil is bent by the advance of the anvil into the concave portion of the ram and bending of the staple is completed.

    摘要翻译： 手术吻合器具有能够容纳处于对准状态的多个钉的主体; 设置在所述主体内的冲头，在所述凹部的两侧具有中心凹部和压力衔铁; 一个砧座，当柱塞的电枢接触订书钉的冠部的两侧时，迫使冠部的中心进入压头的凹部; 以及触发器，其被可旋转地支撑在所述主体上，以便在所述压头和所述砧座之间产生相对运动。 作为移动构件的触发器和作为另一构件的本体彼此冲击以产生声音和/或振动，其指示夹在冲头和砧座之间的钉被弯曲到砧座的凹进部分的凹部 钉子的冲头和弯曲完成。

    Semiconductor memory device and manufacturing method thereof
    47.
    发明授权
    Semiconductor memory device and manufacturing method thereof 有权
    半导体存储器件及其制造方法

    公开(公告)号：US07132332B2

    公开(公告)日：2006-11-07

    申请号：US11247328

    申请日：2005-10-12

    申请人： Masaki Ishidao ,  Masahiro Kobayashi ,  Masatoshi Fukuda

    发明人： Masaki Ishidao ,  Masahiro Kobayashi ,  Masatoshi Fukuda

    IPC分类号： H01L21/8238 ,  H01L21/336

    CPC分类号： H01L21/28273 ,  G11C16/0475 ,  H01L29/7887

    摘要： A polysilicon film and the like are patterned to form n− diffusion layers on a silicon substrate. Subsequently, an outer edge of an Al2O3 film is made retreat to be smaller than that of a gate electrode by performing isotropic etching of the Al2O3 film, using a solution of sulfuric acid with hydrogen peroxide. A silicon oxide film, a silicon nitride film, the polysilicon film and the like are hardly removed although the solution of sulfuric acid with hydrogen peroxide exhibits higher etching rate to the Al2O3 film, enabling almost exclusive etching of the Al2O3 film at a high selectivity ratio. Subsequently, another polysilicon film is formed so as to fill spaces formed after the retreat of the Al2O3 film under the silicon oxide film. Subsequently, a sidewall insulating film is formed by remaining portions of the later polysilicon film in the spaces by performing RIE, oxidation, or the like of the later polysilicon film.

    摘要翻译： 图案化多晶硅膜等以在硅衬底上形成n + - 扩散层。 随后，通过对Al 2 O 3膜进行各向同性腐蚀，使Al 2 O 3膜的外边缘退缩至小于栅电极的外边缘， 使用硫酸与过氧化氢的溶液进行反应。 尽管硫酸与过氧化氢的溶液表现出较高的蚀刻速率，但是Al 2 O 3 O 3不能除去氧化硅膜，氮化硅膜，多晶硅膜等， SUB>膜，使得能够以高选择比几乎独特地蚀刻Al 2 O 3膜。 随后，形成另外的多晶硅膜，以填充氧化硅膜下的Al 2 O 3 N 3膜后退形成的空间。 随后，通过进行稍后多晶硅膜的RIE，氧化等，在剩余的多晶硅膜的剩余部分中形成侧壁绝缘膜。

    Semiconductor device and method for fabricating the same
    48.
    发明授权
    Semiconductor device and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US06924526B2

    公开(公告)日：2005-08-02

    申请号：US10020951

    申请日：2001-12-19

    申请人： Masatoshi Fukuda ,  Kouji Tsunoda

    发明人： Masatoshi Fukuda ,  Kouji Tsunoda

    IPC分类号： H01L21/8242 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L29/92

    CPC分类号： H01L27/10808 ,  H01L21/31604 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/55 ,  H01L28/91

    摘要： The semiconductor device comprises a capacitor including a storage electrode 76, a capacitor dielectric film formed on the storage electrode 76, and a plate electrode formed on the capacitor dielectric film 78, the storage electrode 76 having an upper end rounded and having a larger thickness at the upper end than a thickness in the rest region. Whereby electric field concentration on the upper end of the storage electrode can be mitigated, and leakage current increase and dielectric breakdown of the capacitor dielectric film can be precluded.

    摘要翻译： 半导体器件包括电容器，其包括存储电极76，形成在存储电极76上的电容器电介质膜和形成在电容器电介质膜78上的平板电极，存储电极76具有上端圆形并具有较大厚度 上端大于其余区域的厚度。 由此可以减轻存储电极上端的电场浓度，并且可以防止漏电流增加并且可以阻止电容器电介质膜的介电击穿。