公开(公告)号：US07102367B2

公开(公告)日：2006-09-05

申请号：US10621445

申请日：2003-07-18

申请人： Yasuo Yamagishi ,  Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara

发明人： Yasuo Yamagishi ,  Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara

IPC分类号： G01R31/02 ,  H01R13/00 ,  G01R31/26 ,  H01L29/08

CPC分类号： G01R1/07378 ,  G01R31/2886 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2224/05599

摘要： A probe card includes probes, a build-up interconnection layer having a multilayer interconnection structure therein and carrying the probes on a top surface in electrical connection with the multilayer interconnection structure, and a capacitor provided on the build-up interconnection layer in electrical connection with one of the probes via the multilayer interconnection structure, wherein the multilayer interconnection structure includes an inner via-contact in the vicinity of the probe and the capacitor is embedded in a resin insulation layer constituting the build-up layer.

摘要翻译： 探针卡包括探针，在其中具有多层互连结构的堆积互连层，并且在与多层互连结构电连接的顶表面上承载探针，以及设置在积层互连层上的电容器，其与 通过多层互连结构的探针中的一个，其中多层互连结构包括在探针附近的内部通孔接触，并且电容器嵌入构成堆积层的树脂绝缘层中。

公开(公告)号：US06894396B2

公开(公告)日：2005-05-17

申请号：US10619483

申请日：2003-07-16

申请人： Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara ,  Yasuo Yamagishi

发明人： Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara ,  Yasuo Yamagishi

IPC分类号： H01L23/12 ,  H01L21/60 ,  H01L23/31 ,  H01L23/50 ,  H01L23/64 ,  H01L25/00 ,  H01L27/01 ,  H05K1/02 ,  H05K1/18 ,  H01L23/48

CPC分类号： H01L23/50 ,  H01L23/3107 ,  H01L23/642 ,  H01L24/48 ,  H01L24/81 ,  H01L27/016 ,  H01L2224/05599 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/19106 ,  H01L2924/30107 ,  H05K1/0231 ,  H05K1/182 ,  H05K2201/10515 ,  H05K2201/1053 ,  H05K2201/10734 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device comprises a carrier substrate, an integrated circuit chip mounted on the carrier substrate via bumps, and a capacitor provided to stabilize operation of the integrated circuit chip at high frequencies. In the semiconductor device, the capacitor is electrically connected to pads on bottom of the integrated circuit chip, and the capacitor is provided to have a height on the carrier substrate that is smaller than or equal to a height of the bumps on the carrier substrate.

摘要翻译： 半导体器件包括载体衬底，通过凸块安装在载体衬底上的集成电路芯片，以及用于稳定集成电路芯片在高频下的操作的电容器。 在半导体器件中，电容器电连接到集成电路芯片的底部的焊盘，并且电容器被设置为具有小于或等于载体衬底上的凸块的高度的载体衬底上的高度。

公开(公告)号：US20120058041A1

公开(公告)日：2012-03-08

申请号：US13292247

申请日：2011-11-09

申请人： John David Baniecki ,  Masatoshi Ishii ,  Kazuaki Kurihara ,  Kazunori Yamanaka

发明人： John David Baniecki ,  Masatoshi Ishii ,  Kazuaki Kurihara ,  Kazunori Yamanaka

IPC分类号： C01B31/18 ,  C01B3/10 ,  B01J15/00

CPC分类号： C01B4/00 ,  B01J23/002 ,  C01B3/042 ,  Y02E60/364

摘要： A gas generator includes a processing vessel defining a processing space and holding a support body therein, an evacuation system evacuating the processing space; a metal oxide film of a perovskite structure containing oxygen defects formed on the support body, a source gas supplying port supplying a source gas containing molecules of a source compound of carbon dioxide or water into the processing space, a gas outlet port for extracting a product gas containing molecules of a product compound in which oxygen atoms are removed from said source compound, and a heating part heating the support body.

摘要翻译： 气体发生器包括限定处理空间并将支撑体保持在其中的处理容器，排空系统排空处理空间; 包含形成在支撑体上的氧缺陷的钙钛矿结构的金属氧化物膜，向处理空间供给含有二氧化碳或水源化合物的分子的源气体的源气体供给口，用于提取产物的气体出口 含有其中从所述源化合物中除去氧原子的产物化合物的分子的气体和加热所述载体的加热部分。

公开(公告)号：US08426073B2

公开(公告)日：2013-04-23

申请号：US12720002

申请日：2010-03-09

申请人： Kazuaki Kurihara ,  John David Baniecki ,  Masatoshi Ishii

发明人： Kazuaki Kurihara ,  John David Baniecki ,  Masatoshi Ishii

IPC分类号： H01M8/18 ,  H01M8/04 ,  C12M3/00

CPC分类号： H01M8/0668 ,  H01M8/04097 ,  H01M2008/1293 ,  H01M2008/147 ,  Y02E60/526

摘要： A fuel cell system includes a fuel cell configured to generate electric power with a fuel gas and an oxygen gas fed to the fuel cell and to discharge exhaust gas including CO2 as a result of generating the electric power; a CO extraction part configured to reduce the CO2 in the exhaust gas fed to the CO extraction part to CO, the CO extraction part including a processing container fed with the exhaust gas and a CO2 adsorbing member provided in the processing container and formed of an oxide having an oxygen deficiency; and a CO recycling part configured to feed the extracted CO to the fuel cell as part of the fuel gas.

摘要翻译： 燃料电池系统包括：燃料电池，被配置为利用燃料气体和供给燃料电池的氧气产生电力，并且由于产生电力而排出包括CO 2的废气; CO提取部，被配置为将供给到CO提取部的排气中的CO 2减少为CO，CO提取部包括供给有废气的处理容器和设置在处理容器中并由氧化物形成的CO 2吸附部件 缺氧; 以及CO循环部件，被配置为将所提取的CO作为燃料气体的一部分供给到燃料电池。

公开(公告)号：US07587229B2

公开(公告)日：2009-09-08

申请号：US11727660

申请日：2007-03-27

申请人： Masatoshi Ishii ,  Kazunori Yamanaka ,  Akihiko Akasegawa ,  John David Baniecki ,  Kazuaki Kurihara ,  Teru Nakanishi

发明人： Masatoshi Ishii ,  Kazunori Yamanaka ,  Akihiko Akasegawa ,  John David Baniecki ,  Kazuaki Kurihara ,  Teru Nakanishi

IPC分类号： H01P1/203 ,  H01B12/02

CPC分类号： H01P1/20381

摘要： A superconducting tunable filter comprises a dielectric base plate; a patch-shaped resonator pattern formed of a superconducting material on the dielectric base plate; a top dielectric locally placed on the superconducting resonator pattern at a prescribed position and made of a material with an electric-field dependent permittivity; a conducting pattern formed on a top face of the top dielectric; and a bias voltage supply configured to apply a bias voltage between the conducting pattern and the superconducting resonator pattern.

摘要翻译： 超导可调谐滤波器包括电介质基板; 由电介质基板上的超导材料形成的片状谐振器图案; 局部放置在超导谐振器图案上的指定位置的由电场相关的介电常数材料制成的顶部电介质; 形成在顶部电介质的顶面上的导电图案; 以及偏置电压源，被配置为在所述导电图案和所述超导谐振器图案之间施加偏置电压。

公开(公告)号：US08313726B2

公开(公告)日：2012-11-20

申请号：US13292247

申请日：2011-11-09

申请人： John David Baniecki ,  Masatoshi Ishii ,  Kazuaki Kurihara ,  Kazunori Yamanaka

发明人： John David Baniecki ,  Masatoshi Ishii ,  Kazuaki Kurihara ,  Kazunori Yamanaka

IPC分类号： C01B3/06 ,  C01B31/18 ,  B01J7/00 ,  C01B4/00

CPC分类号： C01B4/00 ,  B01J23/002 ,  C01B3/042 ,  Y02E60/364

摘要： A gas generator includes a processing vessel defining a processing space and holding a support body therein, an evacuation system evacuating the processing space; a metal oxide film of a perovskite structure containing oxygen defects formed on the support body, a source gas supplying port supplying a source gas containing molecules of a source compound of carbon dioxide or water into the processing space, a gas outlet port for extracting a product gas containing molecules of a product compound in which oxygen atoms are removed from said source compound, and a heating part heating the support body.

摘要翻译： 气体发生器包括限定处理空间并将支撑体保持在其中的处理容器，排空系统排空处理空间; 包含形成在支撑体上的氧缺陷的钙钛矿结构的金属氧化物膜，向处理空间供给含有二氧化碳或水源化合物的分子的源气体的源气体供给口，用于提取产物的气体出口 含有其中从所述源化合物中除去氧原子的产物化合物的分子的气体和加热所述载体的加热部分。

公开(公告)号：US20070205486A1

公开(公告)日：2007-09-06

申请号：US11531446

申请日：2006-09-13

申请人： Takeshi SHIOGA ,  Kazuaki Kurihara

发明人： Takeshi SHIOGA ,  Kazuaki Kurihara

IPC分类号： H01L21/20

CPC分类号： H01L28/55 ,  H01L21/76898 ,  H01L23/50 ,  H01L27/016 ,  H01L27/0288 ,  H01L28/57 ,  H01L28/65 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16265 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/19103 ,  H01L2924/00 ,  H01L2224/05599

摘要： A thin film capacitor device of the present invention has a thin film capacitor having two electrodes and a dielectric layer provided therebetween and external terminals electrically connected to the electrodes. In addition, the thin film capacitor device also has resistor layers which are provided between the external terminals and the electrodes and adjacent thereto, and which are formed of a material have a higher resistivity than that of the adjacent electrodes.

摘要翻译： 本发明的薄膜电容器器件具有薄膜电容器，该薄膜电容器具有两个电极和介于其间的电介质层，外部端子与电极电连接。 此外，薄膜电容器装置还具有设置在外部端子和电极之间并且与其相邻的电阻层，并且由电阻形成的材料具有比相邻电极的电阻率更高的电阻率。

公开(公告)号：US20060250749A1

公开(公告)日：2006-11-09

申请号：US11486001

申请日：2006-07-14

申请人： Kazuaki Kurihara ,  Takeshi Shioga ,  John Baniecki ,  Mamoru Kurashina

发明人： Kazuaki Kurihara ,  Takeshi Shioga ,  John Baniecki ,  Mamoru Kurashina

IPC分类号： H01G4/228

CPC分类号： H01G4/33 ,  H01G4/228 ,  H01L23/3114 ,  H01L23/5223 ,  H01L27/0805 ,  H01L28/57 ,  H01L28/65 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/014 ,  H01L2224/13099 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05166 ,  H01L2224/05169

摘要： In one aspect of the invention, in a thin layer capacitor element comprising a capacitor having a dielectric layer made of a metal oxide and a protective insulating layer made of a resin material, a barrier layer made of a non-conductive inorganic material is provided between the capacitor and the protective insulating layer. In another aspect of the invention, a thin layer capacitor element is constituted so that a capacitor structure is covered with at least one protective insulating layer composed of a cured resin, the cured resin being formed from at least one resin precursor selected from the group consisting of thermosetting resins, photosetting resins and thermoplastic resins.

摘要翻译： 在本发明的一个方面中，在由具有由金属氧化物构成的电介质层和由树脂材料构成的保护绝缘层的电容器的薄层电容器元件中，由非导电性无机材料构成的阻挡层 电容器和保护绝缘层。 在本发明的另一方面，薄层电容器元件构成为电容器结构覆盖有由固化树脂构成的至少一个保护绝缘层，所述固化树脂由至少一种选自以下的树脂前体形成： 的热固性树脂，光固化树脂和热塑性树脂。

公开(公告)号：US20060084253A1

公开(公告)日：2006-04-20

申请号：US11250399

申请日：2005-10-17

申请人： Masataka Mizukoshi ,  Kanae Nakagawa ,  Takeshi Shioga ,  Kazuaki Kurihara ,  John Baniecki

发明人： Masataka Mizukoshi ,  Kanae Nakagawa ,  Takeshi Shioga ,  Kazuaki Kurihara ,  John Baniecki

IPC分类号： H01L21/20

CPC分类号： H01L24/91 ,  H01L21/4846 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/76801 ,  H01L21/7687 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76885 ,  H01L23/5283 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/19 ,  H01L24/45 ,  H01L24/48 ,  H01L24/82 ,  H01L2224/02333 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/1134 ,  H01L2224/12105 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/32145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48132 ,  H01L2224/73267 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H05K1/162 ,  H05K1/165 ,  H05K1/167 ,  H05K3/381 ,  H05K3/4602 ,  H05K3/4661 ,  H05K2201/0209 ,  H05K2201/086 ,  H05K2201/09509 ,  H05K2203/0195 ,  H05K2203/0228 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 with a cutting tool 12; the step of forming a seed layer 36 on the resin layer 10 by electroless plating; and the step of forming a plating film 44 on the seed layer 36 by electroplating. Suitable roughness can be give to the surface of the resin layer 10, whereby the adhesion between the seed layer 36 and the resin layer 10 can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer 10, as are by desmearing treatment, whereby a micronized pattern of a photoresist film 40 can be formed on the resin layer 10. Thus, interconnections 44, etc. can be formed over the resin layer 10 at a narrow pitch with high reliability ensured.

摘要翻译： 电镀方法包括在基板16上形成树脂层10的步骤; 用切割工具12切割树脂层10的表面部分的步骤; 通过无电解电镀在树脂层10上形成种子层36的步骤; 以及通过电镀在种子层36上形成镀膜44的步骤。 可以赋予树脂层10的表面适当的粗糙度，由此能够充分确保种子层36与树脂层10之间的粘附性。 在树脂层10的表面上也不会形成过度的深孔，如通过溶剂处理，可以在树脂层10上形成微粉化图案的光致抗蚀剂膜40。 因此，可以以较窄的间距在树脂层10上形成互连44等，从而确保高可靠性。

公开(公告)号：US08203198B2

公开(公告)日：2012-06-19

申请号：US11531446

申请日：2006-09-13

申请人： Takeshi Shioga ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： H01L21/20

CPC分类号： H01L28/55 ,  H01L21/76898 ,  H01L23/50 ,  H01L27/016 ,  H01L27/0288 ,  H01L28/57 ,  H01L28/65 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16265 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/19103 ,  H01L2924/00 ,  H01L2224/05599

摘要： A thin film capacitor device of the present invention has a thin film capacitor having two electrodes and a dielectric layer provided therebetween and external terminals electrically connected to the electrodes. In addition, the thin film capacitor device also has resistor layers which are provided between the external terminals and the electrodes and adjacent thereto, and which are formed of a material have a higher resistivity than that of the adjacent electrodes.

摘要翻译： 本发明的薄膜电容器器件具有薄膜电容器，该薄膜电容器具有两个电极和介于其间的电介质层，外部端子与电极电连接。 此外，薄膜电容器装置还具有设置在外部端子和电极之间并且与其相邻的电阻层，并且由电阻形成的材料具有比相邻电极的电阻率更高的电阻率。