公开(公告)号：US08816495B2

公开(公告)日：2014-08-26

申请号：US13398672

申请日：2012-02-16

Applicant: Chung Yu Wang ,  Shih-Yi Syu ,  Jing-Cheng Lin

Inventor： Chung Yu Wang ,  Shih-Yi Syu ,  Jing-Cheng Lin

IPC: H01L23/34

CPC classification number: H01L23/433 ,  H01L21/563 ,  H01L23/147 ,  H01L23/367 ,  H01L23/49811 ,  H01L23/49827 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00

Abstract: A device includes a package component, and a die over and bonded to the package component. The die includes a substrate. A heat sink is disposed over and bonded to a back surface of the substrate through direct bonding.

Abstract translation: 一种装置包括一个封装部件和一个模具，并结合到封装部件上。 芯片包括基板。 散热器通过直接接合设置在基板的背面上并结合到基板的背面。

公开(公告)号：US08779599B2

公开(公告)日：2014-07-15

申请号：US13298126

申请日：2011-11-16

Applicant: Jing-Cheng Lin ,  Cheng-Lin Huang ,  Szu Wei Lu ,  Jui-Pin Hung ,  Shin-Puu Jeng ,  Chen-Hua Yu

Inventor： Jing-Cheng Lin ,  Cheng-Lin Huang ,  Szu Wei Lu ,  Jui-Pin Hung ,  Shin-Puu Jeng ,  Chen-Hua Yu

IPC: H01L23/538 ,  H01L21/56

CPC classification number: H01L21/561 ,  H01L21/568 ,  H01L23/16 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/562 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/50 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2225/06593 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2224/81 ,  H01L2924/00

Abstract: A device includes a bottom chip and an active top die bonded to the bottom chip. A dummy die is attached to the bottom chip. The dummy die is electrically insulated from the bottom chip.

Abstract translation: 一种器件包括底部芯片和结合到底部芯片的有源顶部管芯。 虚设裸片连接到底部芯片。 虚设裸片与底部芯片电绝缘。

公开(公告)号：US08759118B2

公开(公告)日：2014-06-24

申请号：US13297845

申请日：2011-11-16

Applicant: Chin-Fu Kao ,  Cheng-Lin Huang ,  Jing-Cheng Lin

Inventor： Chin-Fu Kao ,  Cheng-Lin Huang ,  Jing-Cheng Lin

IPC: H01L21/66 ,  H01L23/58

CPC classification number: H01L22/32

Abstract: A system and method for plating a contact is provided. An embodiment comprises forming protective layers over a contact and a test pad, and then selectively removing the protective layer over the contact without removing the protective layer over the test pad. With the protective layer still on the test pad, a conductive layer may be plated onto the contact without plating it onto the test pad. After the contact has been plated, the protective layer over the contact may be removed.

Abstract translation: 提供了一种用于电镀触点的系统和方法。 一个实施例包括在触点和测试垫上形成保护层，然后在触头上选择性地去除保护层，而不需要在测试垫上移除保护层。 在保护层仍在测试焊盘上的情况下，可以将导电层电镀到触点上，而不将其覆盖在测试焊盘上。 接触电镀后，触点上的保护层可以被去除。

公开(公告)号：US08722540B2

公开(公告)日：2014-05-13

申请号：US12841874

申请日：2010-07-22

Applicant: Yu-Liang Lin ,  Weng-Jin Wu ,  Jing-Cheng Lin

Inventor： Yu-Liang Lin ,  Weng-Jin Wu ,  Jing-Cheng Lin

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/6835 ,  H01L2221/68327 ,  H01L2221/6834

Abstract: A method includes bonding a wafer on a carrier through an adhesive, and performing a thinning process on the wafer. After the step of performing the thinning process, a portion of the adhesive not covered by the wafer is removed, while the portion of the adhesive covered by the wafer is not removed.

Abstract translation: 一种方法包括通过粘合剂将晶片接合在载体上，并在晶片上进行稀化处理。 在进行稀化处理的步骤之后，去除未被晶片覆盖的粘合剂的一部分，同时由晶片覆盖的粘合剂部分未被除去。

公开(公告)号：US08629568B2

公开(公告)日：2014-01-14

申请号：US12847802

申请日：2010-07-30

Applicant: Yan-Fu Lin ,  Jing-Cheng Lin ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Chen-Hua Yu

Inventor： Yan-Fu Lin ,  Jing-Cheng Lin ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Chen-Hua Yu

IPC: H01L23/544 ,  H01L21/76

CPC classification number: H01L21/563 ,  H01L23/49838 ,  H01L23/544 ,  H01L24/11 ,  H01L24/81 ,  H01L2223/54413 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54473 ,  H01L2223/5448 ,  H01L2223/54486 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11849 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/73204 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

Abstract: A system and method for determining underfill expansion is provided. An embodiment comprises forming cover marks along a top surface of a substrate, attaching a semiconductor substrate to the top surface of the substrate, placing an underfill material between the semiconductor substrate and the substrate, and then using the cover marks to determine the expansion of the underfill over the top surface of the substrate. Additionally, cover marks may also be formed along a top surface of the semiconductor substrate, and the cover marks on both the substrate and the semiconductor substrate may be used together as alignment marks during the alignment of the substrate and the semiconductor substrate.

Abstract translation: 提供了一种用于确定底部填充膨胀的系统和方法。 一个实施例包括沿着衬底的顶表面形成覆盖标记，将半导体衬底附接到衬底的顶表面，将底部填充材料放置在半导体衬底和衬底之间，然后使用覆盖标记来确定 底部填充在基材的顶表面上。 此外，也可以沿着半导体衬底的顶表面形成覆盖标记，并且衬底和半导体衬底上的覆盖标记可以在衬底和半导体衬底的对准期间一起用作对准标记。

公开(公告)号：US08592995B2

公开(公告)日：2013-11-26

申请号：US12825822

申请日：2010-06-29

Applicant: Jing-Cheng Lin ,  Chen-Hua Yu

Inventor： Jing-Cheng Lin ,  Chen-Hua Yu

IPC: H01L23/50

CPC classification number: H01L23/49816 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11901 ,  H01L2224/1308 ,  H01L2224/13084 ,  H01L2224/13147 ,  H01L2224/13583 ,  H01L2224/13611 ,  H01L2224/13655 ,  H01L2224/16 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  Y10T428/24612 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2924/01015 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/1146

Abstract: A method and structure for good adhesion of Intermetallic Compounds (IMC) on Cu pillar bumps are provided. The method includes depositing Cu to form a Cu pillar layer, depositing a diffusion barrier layer on top of the Cu pillar layer, and depositing a Cu cap layer on top of the diffusion barrier layer, where an intermetallic compound (IMC) is formed among the diffusion barrier layer, the Cu cap layer, and a solder layer placed on top of the Cu cap layer. The IMC has good adhesion on the Cu pillar structure, the thickness of the IMC is controllable by the thickness of the Cu cap layer, and the diffusion barrier layer limits diffusion of Cu from the Cu pillar layer to the solder layer. The method can further include depositing a thin layer for wettability on top of the diffusion barrier layer prior to depositing the Cu cap layer.

Abstract translation: 提供了一种用于金属间化合物（IMC）对Cu柱凸块的良好粘附的方法和结构。 该方法包括沉积Cu以形成Cu柱层，在Cu柱层的顶部上沉积扩散阻挡层，并在扩散阻挡层的顶部上沉积Cu覆盖层，其中形成金属间化合物（IMC） 扩散阻挡层，Cu覆盖层和位于Cu覆盖层顶部的焊料层。 IMC对Cu柱结构具有良好的粘附性，IMC的厚度可由Cu覆盖层的厚度控制，扩散阻挡层限制Cu从Cu柱层到焊料层的扩散。 该方法可以进一步包括在沉积Cu覆盖层之前在扩散阻挡层的顶部沉积薄层以获得润湿性。

公开(公告)号：US08580683B2

公开(公告)日：2013-11-12

申请号：US13246556

申请日：2011-09-27

Applicant: Chung Yu Wang ,  Chih-Wei Wu ,  Szu Wei Lu ,  Jing-Cheng Lin

Inventor： Chung Yu Wang ,  Chih-Wei Wu ,  Szu Wei Lu ,  Jing-Cheng Lin

IPC: H01L23/28

CPC classification number: H01L21/78 ,  H01L21/561 ,  H01L23/16 ,  H01L23/3128 ,  H01L23/562 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0655 ,  H01L2224/13111 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/18161 ,  H01L2924/3511 ,  H01L2224/16225 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/01029

Abstract: Methods and apparatus for performing molding on die on wafer interposers. A method includes receiving an interposer assembly having a die side and an opposite side including two or more integrated circuit dies mounted on the die side of the interposer, the interposer assembly having spaces formed on the die side of the interposer between the two or more integrated circuit dies; mounting at least one stress relief feature on the die side of the interposer assembly in one of the spaces between the two or more integrated circuit dies; and molding the integrated circuit dies using a mold compound, the mold compound surrounding the two or more integrated circuit dies and the at least one stress relief feature. An apparatus is disclosed having integrated circuits mounted on a die side of an interposer, stress relief features between the integrated circuits and mold compound over the integrated circuits.

Abstract translation: 用于在晶片插入件上的模具上进行模制的方法和装置。 一种方法包括接收具有管芯侧面和相对侧的插入件组件，所述插入件组件包括安装在所述插入件的裸片侧上的两个或多个集成电路管芯，所述插入器组件具有形成在所述插入件的裸片侧上的两个或更多个集成 电路模具; 在所述两个或更多个集成电路管芯之间的空间之一中在所述插入器组件的管芯侧上安装至少一个应力释放特征; 以及使用模具化合物模制所述集成电路模具，围绕所述两个或更多个集成电路管芯的所述模具化合物以及所述至少一个应力释放特征。 公开了一种装置，其集成电路安装在插入件的裸片侧，集成电路之间的应力消除特征和集成电路上的模具化合物。

公开(公告)号：US20130249532A1

公开(公告)日：2013-09-26

申请号：US13429054

申请日：2012-03-23

Applicant: Jing-Cheng Lin ,  Szu Wei Lu

Inventor： Jing-Cheng Lin ,  Szu Wei Lu

IPC: G01R1/06 ,  H01L23/48

CPC classification number: H01L25/0655 ,  H01L21/563 ,  H01L21/6835 ,  H01L22/14 ,  H01L23/3157 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/18 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2224/11 ,  H01L2224/11002 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/13184 ,  H01L2224/1403 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2224/81895 ,  H01L2224/83 ,  H01L2224/83104 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06596 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/00

Abstract: A method includes bonding a first package component on a first surface of a second package component, and probing the first package component and the second package component from a second surface of the second package component. The step of probing is performed by probing through connectors on the second surface of the second package component. The connectors are coupled to the first package component. After the step of probing, a third package component is bonded on the first surface of the second package component.

公开(公告)号：US20130207306A1

公开(公告)日：2013-08-15

申请号：US13485307

申请日：2012-05-31

Applicant: Chih-Hao Chen ,  Hsien-Wen Liu ,  Yi-Lin Tsai ,  Jui-Pin Hung ,  Jing-Cheng Lin

Inventor： Chih-Hao Chen ,  Hsien-Wen Liu ,  Yi-Lin Tsai ,  Jui-Pin Hung ,  Jing-Cheng Lin

IPC: B29C43/18 ,  H01L21/56

CPC classification number: B29C43/18 ,  H01L21/565 ,  H01L23/3121 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/94 ,  H01L2924/1531 ,  H01L2924/157 ,  H01L2924/00012 ,  H01L2224/81

Abstract: A method includes molding a polymer onto a package component. The step of molding includes a first molding stage performed at a first temperature, and a second molding stage performed at a second temperature different from the first temperature.

Abstract translation: 一种方法包括将聚合物模塑到包装部件上。 模制步骤包括在第一温度下进行的第一模塑阶段和在与第一温度不同的第二温度下进行的第二模塑阶段。

公开(公告)号：US20130199577A1

公开(公告)日：2013-08-08

申请号：US13369138

申请日：2012-02-08

Applicant: I-Ting Chen ,  Ying-Ching Shih ,  Szu Wei Lu ,  Jing-Cheng Lin

Inventor： I-Ting Chen ,  Ying-Ching Shih ,  Szu Wei Lu ,  Jing-Cheng Lin

IPC: B08B7/04 ,  B08B5/00 ,  B08B3/08 ,  B08B3/02 ,  B08B3/12

CPC classification number: H01L21/02041 ,  H01L21/4864 ,  H01L21/67028 ,  H01L24/81 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/81911 ,  H01L2924/00014 ,  H01L2924/07802 ,  H01L2924/00 ,  H01L2224/0401

Abstract: A flux residue cleaning system includes first and second immersion chambers, first and second spray chambers, and a drying chamber. The first immersion chamber softens an outer region of a flux residue formed around microbumps interposed between a wafer and a die when the wafer is immersed in a first chemical. The first spray chamber removes the outer region of the flux residue when the wafer is impinged upon by a first chemical spray in order to expose an inner region of the flux residue. The second immersion chamber softens the inner region of the flux residue when the wafer is immersed in a second chemical. The second spray chamber removes the inner region of the flux residue when the wafer is impinged upon by a second chemical spray in order to clean the wafer to a predetermined standard. The drying chamber dries the wafer.

Abstract translation: 助焊剂残渣清洁系统包括第一和第二浸没室，第一和第二喷雾室以及干燥室。 当晶片浸入第一化学品中时，第一浸入室软化在介于晶片和管芯之间的微胶片周围形成的焊剂残余物的外部区域。 当晶片通过第一化学喷雾冲击以便暴露焊剂残余物的内部区域时，第一喷雾室除去焊剂残余物的外部区域。 当晶片浸入第二种化学品中时，第二浸入室软化助焊剂残余物的内部区域。 当晶片被第二化学喷雾冲击时，第二喷雾室去除焊剂残余物的内部区域，以便将晶​​片清洁至预定的标准。 干燥室干燥晶片。