公开(公告)号：US10084281B1

公开(公告)日：2018-09-25

申请号：US15710715

申请日：2017-09-20

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Paul Rudy

IPC: F41C23/16 ,  C09K11/06 ,  H01S5/042 ,  H01S3/16 ,  H01S5/323 ,  H01S5/022 ,  H01S5/343 ,  F41H13/00 ,  H01S5/40 ,  H01S5/32 ,  H01S5/22 ,  H01S5/026

CPC classification number: H01S5/0428 ,  F41H13/0056 ,  H01S3/1603 ,  H01S3/1643 ,  H01S5/005 ,  H01S5/02208 ,  H01S5/02212 ,  H01S5/02248 ,  H01S5/026 ,  H01S5/042 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/4012 ,  H01S5/4031 ,  H01S5/4087

Abstract: A laser illumination or dazzler device and method. More specifically, examples of the present invention provide laser illumination or dazzling devices power by one or more violet, blue, or green laser diodes characterized by a wavelength from about 390 nm to about 550 nm. In some examples the laser illumination or dazzling devices include a laser pumped phosphor wherein a laser beam with a first wavelength excites a phosphor member to emit electromagnetic at a second wavelength. In various examples, laser illumination or dazzling devices according to the present invention include polar, non-polar, or semi-polar laser diodes. In a specific example, a single laser illumination or dazzling device includes a plurality of violet, blue, or green laser diodes. There are other examples as well.

公开(公告)号：US20180239148A1

公开(公告)日：2018-08-23

申请号：US15913674

申请日：2018-03-06

Applicant: Soraa Laser Diode, Inc.

Inventor： Paul Rudy ,  James W. Raring ,  Eric Goutain ,  Hua Huang

IPC: G02B27/01

Abstract: The present invention is directed to wearable display technologies. More specifically, various embodiments of the present invention provide wearable augmented reality glasses incorporating projection display systems where one or more laser diodes are used as light source for illustrating images with optical delivery to the eye using transparent waveguides. In one set of embodiments, the present invention provides wearable augmented reality glasses incorporating projector systems that utilize transparent waveguides and blue and/or green laser fabricated using gallium nitride containing material. In another set of embodiments, the present invention provides wearable augmented reality glasses incorporating projection systems having digital lighting processing engines illuminated by blue and/or green laser devices with optical delivery to the eye using transparent waveguides. In one embodiment, the present invention provides wearable augmented reality glasses incorporating a 3D display system with optical delivery to the eye using transparent waveguides. There are other embodiments as well.

公开(公告)号：US10050415B1

公开(公告)日：2018-08-14

申请号：US15643976

申请日：2017-07-07

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Paul Rudy ,  Chendong Bai

IPC: H01S5/00 ,  H01S5/40 ,  H01S5/22 ,  H01S5/343

CPC classification number: H01S5/4031 ,  B82Y20/00 ,  H01S5/2201 ,  H01S5/34333 ,  H01S5/4012

Abstract: Method and devices for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, Al GaN, and AlInGaN, are provided. The laser devices include multiple laser emitters integrated onto a substrate (in a module), which emit green or blue laser radiation.

公开(公告)号：US09800016B1

公开(公告)日：2017-10-24

申请号：US15153554

申请日：2016-05-12

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Hua Huang

IPC: H01S5/028 ,  H01S5/343 ,  H01S5/042

CPC classification number: H01S5/0287 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0282 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/04

Abstract: Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.

公开(公告)号：US09787060B1

公开(公告)日：2017-10-10

申请号：US15298583

申请日：2016-10-20

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Christiane Elsass

IPC: H01S5/343 ,  H01S5/323 ,  H01S5/32 ,  H01S5/22 ,  H01S5/30

CPC classification number: H01S5/3202 ,  H01S5/0422 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/2205 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/3216 ,  H01S5/32308 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/34386 ,  H01S2301/173

Abstract: In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a ({10-10}) crystal orientation or a {10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction. The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.

公开(公告)号：US09786810B2

公开(公告)日：2017-10-10

申请号：US14703767

申请日：2015-05-04

Applicant: Soraa Laser Diode, Inc.

Inventor： Nicholas J. Pfister ,  James W. Raring ,  Mathew Schmidt

IPC: H01L33/00 ,  H01L33/32 ,  H01S5/02 ,  H01S5/30

CPC classification number: H01L33/0095 ,  H01L29/20 ,  H01L33/0075 ,  H01L33/32 ,  H01L2933/0066 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0421 ,  H01S5/2013 ,  H01S5/3013 ,  H01S5/3202 ,  H01S5/32341

Abstract: A method for forming optical devices. The method includes providing a gallium nitride substrate member having a crystalline surface region and a backside region. The method also includes subjecting the backside region to a laser scribing process to form a plurality of scribe regions on the backside region and forming a metallization material overlying the backside region including the plurality of scribe regions. The method removes at least one optical device using at least one of the scribe regions.

公开(公告)号：US20170077677A1

公开(公告)日：2017-03-16

申请号：US15356302

申请日：2016-11-18

Applicant: Soraa Laser Diode, Inc.

Inventor： Po Shan Hsu ,  Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Benyamin Buller

IPC: H01S5/343 ,  H01S5/02 ,  H01S5/042 ,  H01S5/22

CPC classification number: H01S5/34333 ,  H01S5/0202 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/22 ,  H01S2304/00

Abstract: A method for fabricating a laser diode device includes providing a gallium and nitrogen containing substrate member having a surface region, forming a patterned dielectric material overlying the surface region to expose a portion of the surface region within a vicinity of an recessed region of the patterned dielectric material and maintaining an upper portion of the patterned dielectric material overlying covered portions of the surface region, and performing a lateral epitaxial growth overlying the exposed portion of the surface region to fill the recessed region and causing a thickness of the lateral epitaxial growth to be formed overlying the upper portion of the patterned dielectric material. The method also includes forming an n-type gallium and nitrogen containing material, forming an active region, and forming a p-type gallium and nitrogen containing material. The method further includes forming a waveguide structure in the p-type gallium and nitrogen containing material.

Abstract translation: 一种制造激光二极管器件的方法包括提供具有表面区域的含镓和氮的衬底构件，形成覆盖表面区域的图案化电介质材料，以露出图案化电介质的凹陷区域附近的表面区域的一部分 材料并且保持图案化电介质材料的上部覆盖在表面区域的被覆部分上，并且执行覆盖在表面区域的暴露部分上的横向外延生长以填充凹陷区域并且形成横向外延生长的厚度 覆盖图案化电介质材料的上部。 该方法还包括形成n型含镓和氮的材料，形成有源区，并形成p型含镓和氮的材料。 该方法还包括在p型含镓和氮的材料中形成波导结构。

公开(公告)号：US20170063045A1

公开(公告)日：2017-03-02

申请号：US15177710

申请日：2016-06-09

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01S5/343 ,  H01S5/32 ,  H01S5/20 ,  H01S5/02 ,  H01S5/22

CPC classification number: H01S5/34333 ,  H01L2224/18 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/16152 ,  H01L2924/3512 ,  H01S5/005 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/02248 ,  H01S5/02276 ,  H01S5/2009 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3214 ,  H01S5/4043 ,  H01S5/4093 ,  H01S2301/173 ,  H01S2301/176 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

Abstract translation: 一种制造激光二极管器件的方法包括提供具有表面区域并形成覆盖在该表面区域上的外延材料的衬底，所述外延材料包括n型覆层区域，所述有源区域包括至少一个覆盖在n型上的有源层 包层区域和覆盖有源层区域的p型覆层区域。 外延材料被图案化以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。 将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于第一间距。

公开(公告)号：US09466949B1

公开(公告)日：2016-10-11

申请号：US14857719

申请日：2015-09-17

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Christiane Elsass ,  Thiago P. Melo ,  Mathew C. Schmidt

IPC: H01S5/02 ,  H01S5/22 ,  H01S5/343 ,  H01S5/227 ,  H01S5/32 ,  H01L21/02 ,  H01S5/30 ,  H01S5/042 ,  H01S5/10

CPC classification number: H01S5/34333 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01S5/0425 ,  H01S5/1082 ,  H01S5/2201 ,  H01S5/2275 ,  H01S5/3063 ,  H01S5/3202 ,  H01S2301/173 ,  H01S2304/12

Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.

公开(公告)号：US09379522B1

公开(公告)日：2016-06-28

申请号：US14444687

申请日：2014-07-28

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Christiane Poblenz Elsass

IPC: H01L21/00 ,  H01S5/343 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/12 ,  H01S5/34 ,  H01S5/10

CPC classification number: H01S5/34333 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01S5/1082 ,  H01S5/2009 ,  H01S5/2018 ,  H01S5/2031 ,  H01S5/2201 ,  H01S5/3063 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3406 ,  H01S5/34346

Abstract: An optical device has a gallium and nitrogen containing substrate including a surface region and a strain control region, the strain control region being configured to maintain a quantum well region within a predetermined strain state. The device also has a plurality of quantum well regions overlying the strain control region.

Abstract translation: 光学装置具有包含表面区域和应变控制区域的含有氮化镓和氮的衬底，所述应变控制区域被配置为将量子阱区域保持在预定的应变状态。 该装置还具有覆盖在应变控制区域上的多个量子阱区域。