公开(公告)号：US07029939B2

公开(公告)日：2006-04-18

申请号：US10481057

申请日：2002-06-17

申请人： Toshiaki Chiyo ,  Naoki Shibata

发明人： Toshiaki Chiyo ,  Naoki Shibata

IPC分类号： H01L21/22 ,  H01L21/324

CPC分类号： H01L33/0095 ,  H01L21/28575 ,  H01L29/2003 ,  H01L33/14 ,  H01L33/32 ,  H01L33/42

摘要： A p-GaN layer 5 comprising materials such as a Group III nitride compound semiconductor is formed on a sapphire substrate 1 through MOVPE treatment, and a first metal layer 6 made of Co/Au is formed thereon. Then in a planar electron beam irradiation apparatus using plasma, electron beams are irradiated to the p-GaN layer 5 through the first metal layer 6. Accordingly, the first metal layer 6 prevents the surface of the p-GaN layer 5 from being damaged and resistivity of the p-GaN layer 5 can be lowered. Next, a second metal (Ni) layer 10 is formed on the first metal layer 6. And the first metal layer 6 is etched through the second metal layer 10 by using fluoric nitric acid. As a result, the first metal layer is almost completely removed. Then a light-transmitting p-electrode 7 made of Co/Au is formed thereon. As a result, a p-type semiconductor having decreased contact resistance and lower driving voltage can be obtained and optical transmittance factor of the p-type semiconductor improves.

摘要翻译： 通过MOVPE处理在蓝宝石衬底1上形成包含III族氮化物化合物半导体的材料的p-GaN层5，在其上形成由Co / Au构成的第一金属层6。 然后在使用等离子体的平面电子束照射装置中，电子束通过第一金属层6照射到p-GaN层5。 因此，第一金属层6防止p-GaN层5的表面被损坏，并且可以降低p-GaN层5的电阻率。 接着，在第一金属层6上形成第二金属（Ni）层10。 并且通过使用氟酸硝酸将第一金属层6蚀刻通过第二金属层10。 结果，第一金属层几乎被完全去除。 然后在其上形成由Co / Au制成的透光p电极7。 结果，可以获得具有降低的接触电阻和较低驱动电压的p型半导体，并且p型半导体的光透射率提高。

公开(公告)号：US20050224834A1

公开(公告)日：2005-10-13

申请号：US11143664

申请日：2005-06-03

申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

IPC分类号： H01L33/00 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40

摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.

摘要翻译： 发光半导体器件（10）连续地包括蓝宝石衬底（1），AlN缓冲层（2），高载体的硅（Si）掺杂GaN n + +层（3） （n型）浓度，Si掺杂（Al x3 Ga 1-x 3）y 3在1-y 3中， 具有高载流子（n型）浓度的氮（Zn）和Si掺杂（Al 2 x 2 Ga 2） 1-x2 Y2在1-y2 N发射层（5）中，以及Mg掺杂（Al x1 Ga） 在1-y1 N p层（6）中。 AlN层（2）的厚度为500埃。 GaN n + +（3）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 n + +层（4）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 发射层（5）的厚度约为0.5μm。 p层6具有约1.0μm厚度和2×10 17 / cm 3孔浓度。 镍电极（7,8）分别连接到p层（6）和n + +层（4）。 一个凹槽（9）使电极（7,8）电绝缘。 选择各层（4,5,6）中的Al，Ga和In的组成比以满足n +层（3）中的GaN的晶格常数。 LED（10）被设计为提高发光强度并获得更纯的蓝色。

公开(公告)号：US06925100B2

公开(公告)日：2005-08-02

申请号：US10620572

申请日：2003-07-17

申请人： Masanobu Senda ,  Naoki Shibata

发明人： Masanobu Senda ,  Naoki Shibata

IPC分类号： G02B6/42 ,  H01L21/60 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01L33/38 ,  H01L33/62 ,  H01L33/64 ,  H01S3/04 ,  H01S5/00

CPC分类号： H01L33/38 ,  G02B6/4204 ,  H01L33/387 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/051 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2224/16225 ,  H01L2924/00014

摘要： In an LED, the area of contact between an ohmic electrode formed on a contact layer and the contact layer serves as an effective light-emitting area of a light-emitting layer. Therefore, while the area of contact between the ohmic electrode and the contact layer is kept small, a seat electrode is interposed so that the seat electrode is connected to a circuit wiring on a wiring board by a ball electrode being contact with the seat electrode at an area larger than the area. As a result, the size necessary for forming the ball electrode can be secured easily and the light-emitting area of the light-emitting layer in the LED can be reduced sufficiently. Accordingly, a capacitance component formed by clamping the light-emitting portion of the light-emitting layer can be reduced, so that a time constant at a leading edge of luminance and a time constant at a trailing edge of luminance can be reduced sufficiently to obtain a high speed.

摘要翻译： 在LED中，形成在接触层上的欧姆电极与接触层之间的接触面积成为发光层的有效发光面积。 因此，尽管欧姆电极和接触层之间的接触面积保持较小，但是插入座电极，使得座电极通过与座电极接触的球电极连接到布线板上的电路布线 面积大于面积。 结果，可以容易地确保形成球电极所需的尺寸，并且可以充分降低LED中的发光层的发光面积。 因此，可以减少通过夹持发光层的发光部分而形成的电容分量，从而可以充分降低辉度前沿的时间常数和亮度后沿的时间常数，以获得 高速。

公开(公告)号：US06830949B2

公开(公告)日：2004-12-14

申请号：US10258128

申请日：2002-10-21

申请人： Masanobu Senda ,  Jun Ito ,  Toshiaki Chiyo ,  Naoki Shibata ,  Shizuyo Asami

发明人： Masanobu Senda ,  Jun Ito ,  Toshiaki Chiyo ,  Naoki Shibata ,  Shizuyo Asami

IPC分类号： H01L2100

CPC分类号： C30B23/02 ,  C23C14/0036 ,  C23C14/0617 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/0062

摘要： A preferred condition for forming a Group III nitride compound semiconductor layer on a substrate by a sputtering method is proposed. When a first Group III nitride compound semiconductor layer is formed on a substrate by a sputtering method, an initial voltage of a sputtering apparatus is selected to be not higher than 110% of a sputtering voltage.

摘要翻译： 提出了通过溅射法在基板上形成III族氮化物化合物半导体层的优选条件。 当通过溅射法在基板上形成第一III族氮化物化合物半导体层时，溅射装置的初始电压被选择为不高于溅射电压的110％。

公开(公告)号：US06734468B2

公开(公告)日：2004-05-11

申请号：US08866129

申请日：1997-05-30

申请人： Toshiya Uemura ,  Naoki Shibata ,  Shizuyo Noiri ,  Shigemi Horiuchi

发明人： Toshiya Uemura ,  Naoki Shibata ,  Shizuyo Noiri ,  Shigemi Horiuchi

IPC分类号： H01L3300

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/06 ,  H01L29/452 ,  H01L2224/05073 ,  H01L2224/05155 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/0101 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/05042 ,  H01L2924/1033 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： An electrode pad for a Group III nitride compound semiconductor having p-type conduction includes a triple layer structure having first, second, and third metal layers, formed on an electrode layer. A protection film with a window exposing a central portion of the third metal layer is formed by etching on the third metal layer and covers the sides of the first, second, and third metal layers. The second metal layer is made of gold (Au). The first metal layer is made of an element which has ionization potential lower than gold (Au). The third metal is made of an element which has adhesiveness to the protection film stronger than that of gold (Au). Consequently, this structure of the electrode pad improves the adhesive strength between the protection layer and the third meal layer and prevents the etching of the sides of the protection film. Furthermore, the contact resistance between the semiconductor and the electrode pad is lowered and, thus, ohmic characteristic of the electrode pad is improved.

摘要翻译： 具有p型导电的III族氮化物化合物半导体的电极焊盘包括形成在电极层上的具有第一，第二和第三金属层的三层结构。 通过在第三金属层上蚀刻并覆盖第一，第二和第三金属层的侧面，形成具有暴露第三金属层的中心部分的窗口的保护膜。 第二金属层由金（Au）制成。 第一金属层由电离电位低于金（Au）的元素制成。 第三金属由对金（Au）的保护膜具有更强的粘合性的元素制成。 因此，电极焊盘的这种结构提高了保护层和第三层之间的粘合强度，并且防止了保护膜的侧面的蚀刻。 此外，半导体和电极焊盘之间的接触电阻降低，因此提高了电极焊盘的欧姆特性。

公开(公告)号：US06713789B1

公开(公告)日：2004-03-30

申请号：US09516177

申请日：2000-03-01

申请人： Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo ,  Shizuyo Asami ,  Hiroshi Watanabe ,  Masanobu Senda ,  Shinya Asami

发明人： Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo ,  Shizuyo Asami ,  Hiroshi Watanabe ,  Masanobu Senda ,  Shinya Asami

IPC分类号： H01L3300

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007

摘要： A first group III nitride compound layer, which is formed on a substrate by a method not using metal organic compounds as raw materials, is heated in an atmosphere of a mixture gas containing a hydrogen or nitrogen gas and an ammonia gas, so that the crystallinity of a second group III nitride compound semiconductor layer formed on the first group III nitride compound layer is improved. When the first group III nitride compound layer is formed on a substrate by a sputtering method, the thickness of the first group III nitride compound layer is set to be in a range of from 50 Å to 3000 Å.

公开(公告)号：US06426512B1

公开(公告)日：2002-07-30

申请号：US09518724

申请日：2000-03-03

申请人： Jun Ito ,  Toshiaki Chiyo ,  Naoki Shibata ,  Hiroshi Watanabe ,  Shizuyo Asami ,  Shinya Asami

发明人： Jun Ito ,  Toshiaki Chiyo ,  Naoki Shibata ,  Hiroshi Watanabe ,  Shizuyo Asami ,  Shinya Asami

IPC分类号： H01L2906

CPC分类号： H01L33/007 ,  H01L33/0075

摘要： An undercoat layer inclusive of a metal nitride layer is formed on a substrate. Group III nitride compound semiconductor layers are formed on the undercoat layer continuously.

摘要翻译： 在基板上形成包含金属氮化物层的底涂层。 在内涂层上连续形成III族氮化物化合物半导体层。

公开(公告)号：US5700713A

公开(公告)日：1997-12-23

申请号：US406415

申请日：1995-03-20

申请人： Shiro Yamazaki ,  Naoki Shibata ,  Masayoshi Koike

发明人： Shiro Yamazaki ,  Naoki Shibata ,  Masayoshi Koike

IPC分类号： H01L33/12 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01L33/44 ,  H01L21/20

CPC分类号： H01L33/32 ,  H01L33/325 ,  Y10S148/099 ,  Y10S438/93

摘要： A light-emitting semiconductor device a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Mg doped ((Al.sub.x1 Ga.sub.1-x1).sub.y2 In.sub.1-y2 N n.sup.+ -layer (5), and a Mg doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N n.sup.+ -layer (6). The AlN layer (2) has a 500 .ANG. thickness. The GaN n.sup.+ -layer (3) has about a 2.0 .mu.m thickness and a 2.times.10.sup.18 /cm.sup.3 electron concentration. The n.sup.+ -layer (4) has about a 2.0 .mu.m thickness and a 2.times.10.sup.18 /cm.sup.3 electron concentration. A double i-layer structure includes the emission layer (5) and the i-layer (6). The emission layer (5) has about a 0.5 .mu.m thickness, and the i-layer (6) has about a 0.5 .mu.m thickness. Parts of the emission layer (5) and the i-layer (6) are p-type regions (50, 60). Both of the p-type regions exhibit p-type conduction with a 2.times.10.sup.17 /cm.sup.3 hole concentration. The emission layer (5) and the i-layer (6), except for the p-type region, exhibit semi-insulative characteristics.

摘要翻译： 发光半导体器件蓝宝石衬底（1），AlN缓冲层（2），掺杂高（n型）的硅（Si）掺杂的GaN n +层（3），掺杂Si（Alx2Ga1 -x2）n + +（4），Zn（Zn）和Mg掺杂的（（Alx1Ga1-x1）y2In1-y2Nn +层（5），Mg掺杂 （Alx2Ga1-x2）y2In1-y2N n +层（6），AlN层（2）的厚度为500，GaN n +层（3）的厚度约为2.0μm，电子浓度为2×10 18 / cm 3。 n +层（4）的厚度约为2.0μm，电子浓度为2×10 18 / cm 2，i层结构包括发光层（5）和i层（6），发射层（5） 具有约0.5μm的厚度，i层（6）的厚度为0.5μm左右，发光层（5）和i层（6）的一部分为p型区域（50,60） 两个p型区域都具有2x1017 / cm3空穴浓度的p型导电，发射层（5）和i层（6），e 对于p型区域，表示半绝缘特性。

公开(公告)号：US20130009911A1

公开(公告)日：2013-01-10

申请号：US13537188

申请日：2012-06-29

申请人： Naoki Shibata ,  Emiko Tani ,  Toshiki Naito ,  Yusuke Shimizu

发明人： Naoki Shibata ,  Emiko Tani ,  Toshiki Naito ,  Yusuke Shimizu

IPC分类号： G06F3/042

CPC分类号： G06F3/042

摘要： An underlay-board-equipped input device is provided which is capable of preventing positional displacement of a writing paper sheet when a user is writing on the set writing paper sheet and when the writing paper sheet is set again. An underlay board is mounted to the back surface of a rectangular frame-shaped input device having a rectangular hollow input-use interior pivotably about one end edge of the input device. The input device includes a rectangular frame-shaped optical waveguide having the hollow input-use interior. A means for positioning a writing paper sheet (such as protrusions) is provided on the front surface of the underlay board. The front surface of the underlay board and the back surface of the input device are configured to form a holding part for holding the writing paper sheet therebetween.

摘要翻译： 提供了一种配备底板的输入装置，其能够防止用户在书写用纸上书写时以及再次设置书写用纸时书写用纸的位置偏移。 底板被安装到矩形框状输入装置的后表面，该矩形框状输入装置具有可旋转地绕输入装置的一个端边缘的矩形中空输入用内部。 输入装置包括具有中空输入使用内部的矩形框形光波导。 用于定位书写纸（例如突出物）的装置设置在底板的前表面上。 底板的前表面和输入装置的后表面被构造成形成用于将书写用纸夹持在其间的保持部。

公开(公告)号：US20120099818A1

公开(公告)日：2012-04-26

申请号：US13267580

申请日：2011-10-06

申请人： Naoki Shibata ,  Yusuke Shimizu

发明人： Naoki Shibata ,  Yusuke Shimizu

IPC分类号： G02B6/32

CPC分类号： G06F3/0428 ,  G02B6/0078 ,  G02B6/26 ,  G06F3/0421 ,  G06F2203/04103

摘要： The optical waveguide is disposed along the periphery of a display screen of a display of a touch panel. A light-emitting optical waveguide section and a light-receiving optical waveguide section are disposed in an alternating pattern along each edge of the display screen. Both of the light-emitting optical waveguide section and the light-receiving optical waveguide section are coupled together by placing end surfaces of end portions of the light-emitting optical waveguide section and the light-receiving optical waveguide section in abutment with each other. The light-emitting optical waveguide section includes cores each having an end portion provided in the form of a light-emitting lens portion. The light-emitting lens portion has an end surface provided in the form of a light-emitting lens surface. The light-receiving optical waveguide section includes cores each having an end portion provided in the form of a light-receiving lens portion corresponding to the light-emitting lens portion.

摘要翻译： 光波导沿着触摸面板的显示器的显示屏的外围设置。 发光光波导部分和光接收光波导部分沿着显示屏的每个边缘以交替图案设置。 通过使发光光波导路部分和光接收光波导路段的端部表面彼此邻接，发光光波导路段和光接收光波导路段都被耦合在一起。 发光光波导部分包括具有以发光透镜部分的形式设置的端部的芯。 发光透镜部具有以发光透镜表面的形式设置的端面。 光接收光波导部分包括各自具有以对应于发光透镜部分的受光透镜部分的形式设置的端部的芯。