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    Particle optical apparatus with a predetermined final vacuum pressure
    51.
    发明授权
    Particle optical apparatus with a predetermined final vacuum pressure 有权
    具有预定最终真空压力的粒子光学装置

    公开(公告)号：US09153414B2

    公开(公告)日：2015-10-06

    申请号：US11700993

    申请日：2007-01-31

    Applicant: Hendrik Nicolaas Slingerland ,  William Ralph Knowles

    Inventor： Hendrik Nicolaas Slingerland ,  William Ralph Knowles

    IPC: G01F23/00 ,  H01J37/18 ,  H01J37/301 ,  H01J37/305

    CPC classification number: H01J37/18 ,  H01J37/301 ,  H01J37/3056 ,  H01J2237/182 ,  H01J2237/2608 ,  H01J2237/28

    Abstract: The invention relates to a particle-optical apparatus with a predetermined final vacuum pressure. To that end a vacuum chamber of said apparatus is via a first restriction connected to a volume where vapor or gas is present at a known pressure and via a second restriction to a vacuum pump. By making the ratio of the two conductances, associated with said restrictions, a calibrated ratio, the final pressure of the vacuum chamber is a predetermined final pressure. This eliminates the need for e.g. vacuum gauges and control systems, resulting in a more compact design of such apparatus.

    Abstract translation: 本发明涉及具有预定最终真空压力的粒子光学装置。 为此，所述装置的真空室经由与已知压力下存在蒸气或气体并通​​过第二限制到真空泵的体积连接的第一限制。 通过使与所述限制相关联的两个电导率的比率为校准比率，真空室的最终压力是预定的最终压力。 这消除了对例如 真空计和控制系统，从而使这种设备更加紧凑的设计。

    CHARGED PARTICLE BEAM APPARATUS, AND ARTICLE MANUFACTURING METHOD
    55.
    发明申请
    CHARGED PARTICLE BEAM APPARATUS, AND ARTICLE MANUFACTURING METHOD 有权
    充电颗粒光束装置和制品制造方法

    公开(公告)号：US20130216959A1

    公开(公告)日：2013-08-22

    申请号：US13771388

    申请日：2013-02-20

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Ichiro TANAKA ,  Akira MIYAKE

    IPC: H01J37/317

    CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/026 ,  H01J37/3177 ,  H01J2237/182

    Abstract: A charged particle beam apparatus for processing an object using a charged particle beam includes a charged particle lens in which an array of apertures, through each of which a charged particle beam passes, is formed; a vacuum container which contains the charged particle lens; and a radiation source configured to generate an ionizing radiation; wherein the apparatus is configured to cause the radiation source to pass the ionizing radiation through the array of apertures in a state in which a pressure in the vacuum container is changing.

    Abstract translation: 用于使用带电粒子束处理物体的带电粒子束装置包括：带电粒子透镜，其中形成通过每个带电粒子束通过的孔阵列; 包含带电粒子透镜的真空容器; 以及被配置为产生电离辐射的辐射源; 其中所述装置被配置为使得所述辐射源在所述真空容器中的压力正在改变的状态下使所述电离辐射通过所述孔阵列。

    System and method for ion implantation with improved productivity and uniformity
    56.
    发明授权
    System and method for ion implantation with improved productivity and uniformity 有权
    用于离子注入的系统和方法，提高生产率和均匀性

    公开(公告)号：US08278634B2

    公开(公告)日：2012-10-02

    申请号：US12796215

    申请日：2010-06-08

    Applicant: Bo H. Vanderberg ,  Steven C. Hays ,  Andy Ray

    Inventor： Bo H. Vanderberg ,  Steven C. Hays ,  Andy Ray

    IPC: H01J37/317

    CPC classification number: H01J37/317 ,  H01J37/147 ,  H01J37/244 ,  H01J37/3171 ,  H01J49/30 ,  H01J2237/006 ,  H01J2237/182 ,  H01J2237/24542

    Abstract: A method comprising introducing an injected gas (e.g., Argon, Xenon) into a beam line region comprising a magnetic scanner is provided herein. The injected gas improves beam current by enhancing (e.g., increasing, decreasing) charge neutralization of the magnetic ion beam (e.g., the ion beam at regions where the scanning magnetic field is non-zero) thereby reducing the current loss due to the zero field effect (ZFE). By reducing the current loss in regions having a magnetic field, the magnetic beam current is increased (e.g., the beam current is increased in regions where the magnetic field is non-zero) raising the overall beam current in a uniform manner over an entire scan path and thereby reducing the effect of the ZFE. In other words, the ZFE is removed by effectively minimizing it through an increase in the magnetized beam current.

    Abstract translation: 本文提供了将注入的气体（例如，氩，氙）引入到包括磁扫描器的束线区域中的方法。 注入的气体通过增强（例如，增加，减少）磁离子束的电荷中和（例如，扫描磁场不为零的区域处的离子束）来改善束流，从而减少由于零场导致的电流损耗 效果（ZFE）。 通过减小具有磁场的区域中的电流损耗，磁束电流增加（例如，在磁场不为零的区域中，束电流增加）在整个扫描中以均匀的方式提高整个束电流 路径，从而减少ZFE的影响。 换句话说，ZFE通过磁化束电流的增加有效地最小化而被去除。

    Interface, a method for observing an object within a non-vacuum environment and a scanning electron microscope
    57.
    发明授权
    Interface, a method for observing an object within a non-vacuum environment and a scanning electron microscope 有权
    界面，在非真空环境中观察物体的方法和扫描电子显微镜

    公开(公告)号：US08164057B2

    公开(公告)日：2012-04-24

    申请号：US12446757

    申请日：2007-10-23

    Applicant: Dov Shachal

    Inventor： Dov Shachal

    IPC: G01N23/00

    CPC classification number: H01J37/285 ,  H01J37/06 ,  H01J37/20 ,  H01J37/28 ,  H01J37/301 ,  H01J2237/006 ,  H01J2237/0458 ,  H01J2237/15 ,  H01J2237/164 ,  H01J2237/182 ,  H01J2237/2002 ,  H01J2237/2006 ,  H01J2237/2605 ,  H01J2237/28 ,  H01J2237/2801 ,  H01J2237/2806 ,  H01J2237/2807

    Abstract: An interface, a scanning electron microscope and a method for observing an object that is positioned in a non-vacuum environment. The method includes: passing at least one electron beam that is generated in a vacuum environment through at least one aperture out of an aperture array and through at least one ultra thin membrane that seals the at least one aperture; wherein the at least one electron beam is directed towards the object; wherein the at least one ultra thin membrane withstands a pressure difference between the vacuum environment and the non-vacuum environment; and detecting particles generated in response to an interaction between the at least one electron beam and the object.

    Abstract translation: 接口，扫描电子显微镜和用于观察位于非真空环境中的物体的方法。 该方法包括：使在真空环境中产生的至少一个电子束通过孔阵列中的至少一个孔并通过至少一个密封所述至少一个孔的超薄膜; 其中所述至少一个电子束被引向所述物体; 其中所述至少一个超薄膜承受真空环境和非真空环境之间的压力差; 以及检测响应于所述至少一个电子束和所述物体之间的相互作用而产生的微粒。

    SYSTEM, METHOD AND APPARATUS FOR PLASMA ETCH HAVING INDEPENDENT CONTROL OF ION GENERATION AND DISSOCIATION OF PROCESS GAS
    58.
    发明申请
    SYSTEM, METHOD AND APPARATUS FOR PLASMA ETCH HAVING INDEPENDENT CONTROL OF ION GENERATION AND DISSOCIATION OF PROCESS GAS 有权
    具有离子发生和过程气体分离独立控制的等离子体蚀刻的系统，方法和装置

    公开(公告)号：US20110212624A1

    公开(公告)日：2011-09-01

    申请号：US12713523

    申请日：2010-02-26

    Applicant: Eric A. Hudson

    Inventor： Eric A. Hudson

    IPC: H01L21/3065 ,  C23F1/08

    CPC classification number: H01L21/3065 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/182 ,  H01L21/31116 ,  H05H1/24

    Abstract: A method of etching a semiconductor wafer including injecting a source gas mixture into a process chamber including injecting the source gas mixture into a multiple hollow cathode cavities in a top electrode of the process chamber and generating a plasma in each one of the hollow cathode cavities. Generating the plasma in the hollow cathode cavities includes applying a first biasing signal to the hollow cathode cavities. The generated plasma or activated species is output from corresponding outlets of each of the hollow cathode cavities into a wafer processing region in the process chamber. The wafer processing region is located between the outlets of the hollow cathode cavities and a surface to be etched. An etchant gas mixture is injected into the wafer processing region. A plasma can also be supported and/or generated in the wafer processing region. The etchant gas mixture is injected through multiple injection ports in the top electrode such that the etchant gas mixture mixes with the plasma output from the outlets of the hollow cathode cavities. The etchant gas mixture is substantially prevented from flowing into the outlets of the hollow cathode cavities by the plasma flowing from the outlets of hollow cathode cavities. Mixing the etchant gas mixture and the output from the hollow cathode cavities generates a desired chemical species in the wafer processing region and the surface to be etched can be etched. A system for generating an etching species is also describer herein.

    Abstract translation: 一种蚀刻半导体晶片的方法，包括将源气体混合物注入到处理室中，包括将源气体混合物注入到处理室的顶部电极中的多个空心阴极腔中，并在每个空心阴极腔中产生等离子体。 在中空阴极腔中产生等离子体包括将第一偏置信号施加到中空阴极腔。 产生的等离子体或活化物质从每个空心阴极腔的相应出口输出到处理室中的晶片处理区域。 晶片处理区域位于中空阴极腔的出口和待蚀刻的表面之间。 将蚀刻气体混合物注入晶片处理区域。 等离子体也可以在晶片处理区域中被支持和/或产生。 蚀刻剂气体混合物通过顶部电极中的多个注入口注入，使得蚀刻剂气体混合物与来自空心阴极腔的出口的等离子体输出混合。 通过等离子体从空心阴极腔的出口流出，基本上防止了蚀刻剂气体混合物流入空心阴极腔的出口。 将蚀刻剂气体混合物和来自空心阴极腔的输出混合在晶片加工区域中产生所需的化学物质，并且可以蚀刻待蚀刻的表面。 本文还描述了用于产生蚀刻物质的系统。

    VACUUM PROCESSING CHAMBERS INCORPORATING A MOVEABLE FLOW EQUALIZER
    59.
    发明申请
    VACUUM PROCESSING CHAMBERS INCORPORATING A MOVEABLE FLOW EQUALIZER 失效
    真空加工罐配有可移动流量均衡器

    公开(公告)号：US20110031214A1

    公开(公告)日：2011-02-10

    申请号：US12537179

    申请日：2009-08-06

    Applicant: Jisoo Kim ,  Thorsten B. Lill

    Inventor： Jisoo Kim ,  Thorsten B. Lill

    IPC: C23F1/00 ,  C23F1/08

    CPC classification number: H01L21/68785 ,  C23C16/4412 ,  H01J37/185 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/182 ,  H01J2237/2001 ,  H01L21/6719

    Abstract: A method and apparatus for vacuum processing of a workpiece, the apparatus including a flow equalizer disposed in a vacuum processing chamber between a workpiece support pedestal and a pump port located in a wall of the vacuum processing chamber. In an embodiment, the flow equalizer has a first annular surface concentric about the workpiece support pedestal to provide conductance symmetry about the workpiece support even when the pump port is asymmetrically positioned within the vacuum processing chamber. In an embodiment, the flow equalizer has a second annular surface facing a lower surface of the workpiece support pedestal to restrict conductance as the flow equalizer is moved is response to a chamber pressure control signal. In an embodiment, the apparatus for vacuum processing of a workpiece includes tandem vacuum processing chambers sharing a vacuum pump with each tandem chamber including a flow equalizer to reduce cross-talk between the tandem chambers.

    Abstract translation: 一种用于真空处理工件的方法和装置，该装置包括设置在工件支撑基座和位于真空处理室的壁中的泵口之间的真空处理室中的流量均衡器。 在一个实施例中，流量均衡器具有围绕工件支撑基座同心的第一环形表面，以便即使当泵口不对称地位于真空处理室内时也能够提供关于工件支撑件的电导对称性。 在一个实施例中，流量均衡器具有面向工件支撑基座的下表面的第二环形表面，以在流量均衡器移动时限制电导响应于腔室压力控制信号。 在一个实施例中，用于真空处理工件的装置包括串联真空处理室，其共享真空泵，每个串联室包括流量均衡器以减少串联室之间的串扰。

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