Abstract:
A PoP (package-on-package) package includes a bottom package coupled to a top package. Terminals on the top of the bottom package are coupled to terminals on the bottom of the top package with an electrically insulating material located between the upper surface of the bottom package and the lower surface of the top package. The bottom package and the top package are coupled during a process that applies force to bring the packages together while heating the packages.
Abstract:
In some embodiments, a semiconductor device package on package assembly may include a first package, a second package, and a third package. The first package may include a first surface, a second surface, a first die, and a first set of electrical conductors. The first set of electrical conductors may be configured to electrically connect the package on package assembly. The second package may include a third surface and a fourth surface, and a local memory module. The third surface may be coupled to the second surface. The first package may be electrically coupled to the second package. The third package may include a fifth surface and a sixth surface, and a main memory module. The fifth surface may be coupled to the fourth surface. The third package may be electrically coupled to the first package and/or the second package.
Abstract:
In some embodiments, a semiconductor device package assembly may include a first substrate. The first substrate may include a first set of electrical conductors which electrically connect the assembly. In some embodiments, the assembly may include at least one electrical conductor coupled to the first substrate such that at least one of the electrical conductors exposes through a perimeter surface of the semiconductor device package assembly. In some embodiments, the assembly may include a first die electrically connected to a second surface of the first substrate using a second set of electrical conductors. The assembly may include an electronic memory module coupled to the first die. In some embodiments, the assembly may include a shield applied to an upper surface of the assembly and electrically coupled to at least one of the exposed electrical conductors. The shield may inhibit, during use, electromagnetic interference.
Abstract:
A semiconductor device package includes a logic die coupled to a memory die in a face-to-face configuration with small interconnect pitch (at most about 50 μm) and small distances between the die (at most about 50 μm). The logic die may be connected to a redistribution layer with terminals that are fanned out, or spaced out, to provide space for the face-to-face connections to the memory die. The memory die may be connected to the logic die before or after the logic die is connected to the redistribution layer. The logic die and the memory die may be at least partially encapsulated in an encapsulant. Routing in the redistribution layer may connect the logic die and/or the memory die to ball grid array terminals coupled to the bottom of the redistribution layer and/or discrete devices coupled to the redistribution layer.
Abstract:
In some embodiments, a semiconductor device package assembly may include a first substrate. The semiconductor device package assembly may include a first die electrically connected to the first substrate such that the first die is directly bonded to the first substrate. The semiconductor device package assembly may include a second substrate directly bonded to a surface of the first die. The semiconductor device package assembly may include an electronic memory module. The electronic memory module may be directly bonded to the second substrate. The semiconductor device package assembly may include a thermally conductive material directly applied to the electronic memory module. The semiconductor device package assembly may include a heat spreader directly bonded to the thermally conductive material. The heat spreader may function to transfer heat from the first die and the electronic memory module through the heat spreader from the first side to the second side.
Abstract:
A PoP (package-on-package) package includes a bottom package coupled to a top package. The bottom package includes a die coupled to an interposer layer with an adhesive layer. One or more terminals are coupled to the interposer layer on the periphery of the die. The terminals and the die are at least partially encapsulated in an encapsulant. The terminals and the die are coupled to a redistribution layer (RDL). Terminals on the bottom of the RDL are used to couple the PoP package to a motherboard or a printed circuit board (PCB). One or more additional terminals couple the interposer layer to the top package. The additional terminals may be located anywhere along the surface of the interposer layer.
Abstract:
Multiple component package structures are described in which an interposer chiplet is integrated to provide fine routing between components. In an embodiment, the interposer chiplet and a plurality of conductive vias are encapsulated in an encapsulation layer. A first plurality of terminals of the first and second components may be in electrical connection with the plurality of conductive pillars and a second plurality of terminals of first and second components may be in electrical connection with the interposer chiplet.
Abstract:
Electronic package structures and systems are described in which a 3D interconnect structure is integrated into a package redistribution layer and/or chiplet for power and signal delivery to a die. Such structures may significantly improve input output (IO) density and routing quality for signals, while keeping power delivery feasible.
Abstract:
A semiconductor device package is described that includes a power consuming device (such as an SOC device). The power consuming device may include one or more current consuming elements. A passive device may be coupled to the power consuming device. The passive device may include a plurality of passive elements formed on a semiconductor substrate. The passive elements may be arranged in an array of structures on the semiconductor substrate. The power consuming device and the passive device may be coupled using one or more terminals. The passive device and power consuming device coupling may be configured in such a way that the power consuming device determines functionally the way the passive device elements will be used.
Abstract:
Semiconductor packaging substrates and processing sequences are described. In an embodiment, a packaging substrate includes a build-up structure, and a patterned metal contact layer partially embedded within the build-up structure and protruding from the build-up structure. The patterned metal contact layer may include an array of surface mount (SMT) metal bumps in a chip mount area, a metal dam structure or combination thereof.