摘要:
A junction at which at least two conductors are connected together includes a compound region containing Cu, Sn and at least one element selected from the group consisting of Si, B, Ti, Al, Ag, Bi, In, Sb, Ga and Zn. The compound region forms a nanocomposite metal diffusion region with the conductor.
摘要:
A functional material includes at least two kinds of particles selected from the group consisting of first metal composite particles, second metal composite particles and third metal composite particles. The first metal composite particles, the second metal composite particles and the third metal composite particles each contain two or more kinds of metal components. The melting point T1(° C.) of the first metal composite particles, the melting point T2(° C.) of the second metal composite particles and the melting point T3(° C.) of the third metal composite particles satisfy a relationship of T1>T2>T3.
摘要:
An integrated circuit device includes a semiconductor substrate, an active element and a passive element. The active element is made of the semiconductor substrate. The passive element includes a functional element filled in a groove or hole provided in the semiconductor substrate along a thickness direction thereof and is electrically connected to the active element. The functional element has a Si—O bond region obtained by reacting Si particles with an organic Si compound.
摘要:
A method for forming a functional part in a minute space includes the steps of; filling a minute space with a dispersion functional material in which a thermally-meltable functional powder is dispersed in a liquid dispersion medium; evaporating the liquid dispersion medium present in the minute space; and heating the functional powder and hardening it under pressure.
摘要:
A circuit board includes a substrate, a circuit pattern and a through electrode. The circuit pattern is disposed on one side of the substrate in a thickness direction thereof. The through electrode is filled in a through-hole formed in the substrate with one end connected to the circuit pattern. The circuit pattern and the through electrode each have an area containing a noble metal component (e.g., Au component) and are connected to each other therethrough.
摘要:
A light-emitting device includes a light-emitting element and a support substrate. The light-emitting element has an insulating layer and first and second vertical conductors passing through the insulating layer. The support substrate has a substrate part and first and second through electrodes and is disposed on the insulating layer. The first through electrode passes through the substrate part with one end connected to an opposing end of the first vertical conductor, while the second through electrode passes through the substrate part with one end connected to an opposing end of the second vertical conductor. The opposing ends of the first and second vertical conductors are projected from a surface of the insulating layer and connected to the ends of the first and second through electrode inside the support substrate.
摘要:
The present invention includes a step of cooling a molten metal within a fine space present in the inside of an object and hardening it while applying a forced external force exceeding atmospheric pressure to the molten metal. The fine space is opened on the outer surface of the object in terms of one end thereof. The forced external force is given by at least one member selected among a pressing pressure, an injection pressure and a rolling compaction and applied to the molten metal from the opening surface side on which the fine space is opened, in a state that the other end side of the fine space is closed.
摘要:
A solar cell includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, a first electrode, and a second electrode. The first conductivity-type semiconductor layer has a front side intended to serve as a light-receiving surface. The second conductivity-type semiconductor layer is disposed on a back side of the first conductivity-type semiconductor layer, forming a p-n junction together with the first conductivity-type semiconductor layer. The first electrode passes through the second conductivity-type semiconductor layer toward the first conductivity-type semiconductor layer with a tip extending into and ending within the first conductivity-type semiconductor layer. The second electrode is disposed at a back side of the solar cell.
摘要:
The present invention provides a method for producing nanometer-size spherical particles. The method includes a first step for producing intermediate spherical particles. The intermediate spherical particles include a polycrystalline or single-crystalline region, having a particle size of 1 to 300 μm. The method of the present invention further includes a second step for producing final spherical particles. The second step uses a swirling plasma gas flow having the central axis thereof, the central axis running through an area between an anode and a cathode of a plasma generator. The intermediate spherical particles are discharged along the axis to subject the intermediate spherical particles to a plasma atmosphere of the area to form the final spherical particles.
摘要:
The present invention provides a method for producing nanometer-size spherical particles. The method includes a first step for producing intermediate spherical particles. The intermediate spherical particles include a polycrystalline or single-crystalline region, having a particle size of 1 to 300 μm. The method of the present invention further includes a second step for producing final spherical particles. The second step uses a swirling plasma gas flow having the central axis thereof, the central axis running through an area between an anode and a cathode of a plasma generator. The intermediate spherical particles are discharged along the axis to subject the intermediate spherical particles to a plasma atmosphere of the area to form the final spherical particles.