公开(公告)号：US20190006577A1

公开(公告)日：2019-01-03

申请号：US16064420

申请日：2016-12-21

申请人： Soitec

发明人： Bruno Ghyselen ,  Ionut Radu ,  Jean-Marc Bethoux

IPC分类号： H01L41/187 ,  C30B29/22 ,  C30B25/18 ,  H01L41/08 ,  H01L41/09 ,  H01L41/113 ,  H01L41/319 ,  H01L41/335 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02 ,  H03H9/17 ,  H03H9/19 ,  H03H9/54 ,  H03H9/25 ,  H03H9/64

摘要： A method of fabricating a monocrystalline piezoelectric layer, wherein the method comprises: supplying a donor substrate of the piezoelectric material, supplying a receiving substrate, transferring a layer called a “seed layer” from the donor substrate onto the receiving substrate, and implementing an epitaxy of the piezoelectric material on the seed layer until a required thickness for the monocrystalline piezoelectric layer is obtained.

公开(公告)号：US20180375014A1

公开(公告)日：2018-12-27

申请号：US16064416

申请日：2016-12-21

申请人： Soitec

发明人： Bruno Ghyselen ,  Jean-Marc Bethoux

IPC分类号： H01L41/39 ,  C30B29/30 ,  H01L41/187 ,  H03H9/02 ,  H03H9/54 ,  H03H9/64 ,  H01L41/319

摘要： A method of manufacturing a monocrystalline layer comprises the following successive steps: providing a donor substrate comprising a piezoelectric material of composition ABO3, where A consists of at least one element from among Li, Na, K, H, Ca; and B consists of at least one element from among Nb, Ta, Sb, V; providing a receiver substrate, transferring a layer called the “seed layer” from the donor substrate on to the receiver substrate, such that the seed layer is at the bonding interface, followed by thinning of the donor substrate layer; and growing a monocrystalline layer of composition A′B′O3 on piezoelectric material ABO3 of the seed layer where A′ consists of a least one of the following elements Li, Na, K, H; B′ consists of a least one of the following elements Nb, Ta, Sb, V; and A′ is different from A or B′ is different from B.

公开(公告)号：US09929040B2

公开(公告)日：2018-03-27

申请号：US15083725

申请日：2016-03-29

申请人： Soitec

发明人： Carole David ,  Anne-Sophie Cocchi

IPC分类号： H01L29/20 ,  H01L21/36 ,  H01L21/762 ,  H01L21/324 ,  H01L29/51

CPC分类号： H01L21/76251 ,  H01L21/3247 ,  H01L21/76254 ,  H01L21/76281 ,  H01L29/51 ,  H01L29/511 ,  H01L2224/11849 ,  H01L2224/11901

摘要： A process is used for fabricating a final structure comprising in succession a useful semiconductor layer, a dielectric layer and a carrier substrate. The process comprises providing an intermediate structure including an upper layer, the dielectric layer and the carrier substrate, and finishing the intermediate structure to form the final structure by performing a treatment nonuniformly modifying the thickness of the dielectric layer following a predetermined dissolution profile. The dielectric layer of the intermediate structure has a thickness profile complementary to the predetermined dissolution profile.

公开(公告)号：US20180024186A1

公开(公告)日：2018-01-25

申请号：US15546252

申请日：2016-01-19

申请人： Soitec ,  UNIVERSITE CATHOLIQUE DU LOUVAIN

发明人： Cédric Malaquin ,  Jean-Pierre Raskin ,  Eric Desbonnets

IPC分类号： G01R31/28 ,  G01R29/12 ,  G01R29/08 ,  G01R31/26

CPC分类号： G01R31/2822 ,  G01R29/0878 ,  G01R29/12 ,  G01R31/2648 ,  G01R31/2831 ,  G01R31/2887 ,  G01R31/2889

摘要： The disclosure relates to a device for measuring an electrical characteristic of a substrate comprising a support made of a dielectric material having a bearing surface, the support comprising an electrical test structure having a contact surface flush with the bearing surface of the support, the bearing surface of the support and the contact surface of the electrical test structure being suitable for coming into close contact with a substrate. The measurement device also comprises at least one connection bump contact formed on another surface of the support and electrically linked to the electrical test structure. This disclosure also relates to a system for characterizing a substrate and a method for measuring a characteristic of a substrate employing the measurement device.

公开(公告)号：US20170331501A1

公开(公告)日：2017-11-16

申请号：US15531976

申请日：2015-09-17

申请人： Soitec

发明人： Oleg Kononchuk ,  Didier Landru ,  Christophe Figuet

IPC分类号： H04B1/03 ,  H01M4/66 ,  H01L21/02 ,  H01L21/762 ,  H01L41/047 ,  H01L21/28

CPC分类号： H04B1/03 ,  H01L21/02167 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28282 ,  H01L21/76254 ,  H01L21/76297 ,  H01L41/0477 ,  H01M4/663

摘要： A structure for radiofrequency applications includes: a semiconducting supporting substrate, and a trapping layer arranged on the supporting substrate. The trapping layer includes a higher defect density than a predetermined defect density. The predetermined defect density is the defect density beyond which the electric resistivity of the trapping layer is no lower 10,000 ohm·cm over a temperature range extending from −20° C. to 120° C.

公开(公告)号：US09679799B2

公开(公告)日：2017-06-13

申请号：US14441473

申请日：2013-09-25

申请人： Soitec

发明人： Christophe Gourdel ,  Oleg Kononchuk

IPC分类号： H01L21/762 ,  H01L21/84 ,  H01L21/324

CPC分类号： H01L21/7624 ,  H01L21/324 ,  H01L21/76251 ,  H01L21/84

摘要： The present disclosure relates to a process for fabricating a plurality of semiconductor-on-insulator structures, the insulator being a layer of silicon dioxide having a thickness smaller than 50 nm, each structure comprising a semiconductor layer placed on the silicon dioxide layer, the fabrication process comprising a step of heat treating the plurality of structures, which heat treatment step is designed to partially dissolve the silicon dioxide layer, the heat treatment step being carried out in a non-oxidizing atmosphere and the pressure of the non-oxidizing atmosphere being lower than 0.1 bar.

公开(公告)号：US09621168B2

公开(公告)日：2017-04-11

申请号：US14381098

申请日：2013-02-11

申请人： Soitec

发明人： Richard Ferrant

IPC分类号： H03K19/177

CPC分类号： H03K19/17728 ,  H03K19/17764

摘要： The present invention relates to a look-up table comprising a plurality of register signals (r0-r3); a plurality of inputs signals (A, A′, B, B′); and at least one output signal (Y); and a plurality of pass gates, wherein at least a first pass gate of the plurality of pass gates is controlled by at least a first input signal of the plurality of input signals, and by at least a first register signal, of the plurality of register signals, such that the register signal has priority over the input signal on the operation of the first pass gate.

公开(公告)号：US20170084478A1

公开(公告)日：2017-03-23

申请号：US15264821

申请日：2016-09-14

申请人： Soitec ,  Peregrine Semiconductor Corporation

发明人： Bich-Yen Nguyen ,  Christophe Maleville ,  Sinan Goktepeli ,  Anthony Mark Miscione ,  Alain Duvallet

IPC分类号： H01L21/763 ,  H01L23/66 ,  H01L21/762 ,  H01L21/02 ,  H01L29/04 ,  H01L29/16

CPC分类号： H01L21/763 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/7624 ,  H01L21/76254 ,  H01L23/66 ,  H01L27/13 ,  H01L29/04 ,  H01L29/16

摘要： The invention relates to a structure for radiofrequency applications comprising: a monocrystalline substrate, a polycrystalline silicon layer directly on the monocrystalline substrate, and an active layer on the polycrystalline silicon layer intended to receive radiofrequency components. At least a first portion of the polycrystalline silicon layer extending from the interface of the polycrystalline silicon layer with the monocrystalline layer includes carbon and/or nitrogen atoms located at the grain boundaries of the polycrystalline silicon at a concentration of between 2% and 20%. A process for manufacturing such a structure includes, during deposition of at least a first portion of such a polycrystalline silicon layer located at the interface with the monocrystalline substrate, depositing carbon and/or atoms in the portion.

公开(公告)号：US20170062236A1

公开(公告)日：2017-03-02

申请号：US15350290

申请日：2016-11-14

申请人： Soitec

发明人： Didier Landru ,  Oleg Kononchuk

IPC分类号： H01L21/322 ,  H01L21/762

CPC分类号： H01L21/3225 ,  H01L21/3226 ,  H01L21/324 ,  H01L21/7624

摘要： This disclosure relates to a method for dissolving a silicon dioxide layer in a structure, including, from the back surface thereof to the front surface thereof, a supporting substrate, the silicon dioxide layer and a semiconductor layer, the dissolution method being implemented in a furnace in which structures are supported on a support, the dissolution method resulting in the diffusion of oxygen atoms included in the silicon dioxide layer through the semiconductor layer and generating volatile products, and the furnace including traps suitable for reacting with the volatile products, so as to reduce the concentration gradient of the volatile products parallel to the front surface of at least one structure.

摘要翻译： 本公开涉及一种将二氧化硅层溶解在结构中的方法，包括从其后表面到其前表面的支撑衬底，二氧化硅层和半导体层，该溶解方法在炉中实施 其中结构支撑在载体上，溶解方法导致二氧化硅层中包含的氧原子扩散通过半导体层并产生挥发性产物，并且该炉包括适于与挥发性产物反应的阱，以便 降低与至少一个结构的前表面平行的挥发性产物的浓度梯度。

公开(公告)号：US09531320B2

公开(公告)日：2016-12-27

申请号：US14441676

申请日：2013-11-05

申请人： Soitec Solar GMBH

发明人： Abel Gonzalez Moreno

IPC分类号： H02N6/00 ,  H01L31/042 ,  F24J2/54 ,  H02S40/22 ,  F16M11/12 ,  F16M11/18

CPC分类号： H02S20/32 ,  F16M11/126 ,  F16M11/18 ,  F24S30/452 ,  F24S2030/134 ,  F24S2030/15 ,  H02S40/22 ,  Y02E10/47 ,  Y02E10/52

摘要： The disclosure relates to a guide system for holding and moving sunlight-absorbing devices, in particular, solar panels or concentrated photovoltaic modules, about an azimuth axis and an elevation axis, comprising a housing, at least one azimuth drive, at least one azimuth gear unit, the azimuth drive being configured for driving the azimuth gear unit for a rotational movement about the azimuth axis, at least one elevation drive, at least one elevation gear unit, the elevation drive being configured for driving the elevation gear unit for a rotational movement about the elevation axis, and wherein the elevation gear unit is connected to a first end of a torsion tube, and the torsion tube is turnably mounted inside the housing along the elevation axis, wherein the torsion tube is supported by at least two bearings, preferably one at each end of the torsion tube, and wherein the second end of the torsion tube is configured to receive and connect to a support arm for carrying/supporting one or more of the sunlight-absorbing devices, and the torsion tube further being configured to transmit torque from the elevation gear unit to the support arm.

摘要翻译： 本发明涉及一种用于保持和移动太阳光吸收装置（特别是太阳能电池板或集中的光伏模块）的引导系统，其围绕方位角轴和仰角轴，包括壳体，至少一个方位驱动器，至少一个方位角齿轮 单元，所述方位驱动器被配置为用于驱动所述方位齿轮单元以围绕所述方位轴线的旋转运动，至少一个升降驱动器，至少一个升降齿轮单元，所述升降驱动器构造成用于驱动所述升降齿轮单元进行旋转运动 并且其中所述升降齿轮单元连接到扭转管的第一端，并且所述扭转管可沿所述仰角轴线可转动地安装在所述壳体内，其中所述扭转管由至少两个轴承支撑，优选地 一个在扭转管的每个端部，并且其中扭转管的第二端构造成接收和连接到支撑臂以承载/支撑o 一个或多个太阳光吸收装置，并且扭转管进一步被配置为将扭矩从升降装置传递到支撑臂。