公开(公告)号：US20110123830A1

公开(公告)日：2011-05-26

申请号：US13055948

申请日：2008-08-05

申请人： Kazuyuki Tohji ,  Takayuki Yoshida ,  Okayama Gotoh ,  Masatoshi Nakayama

发明人： Kazuyuki Tohji ,  Takayuki Yoshida ,  Okayama Gotoh ,  Masatoshi Nakayama

IPC分类号： G11B5/62 ,  H01F1/00 ,  H01F1/04

CPC分类号： G11B5/714 ,  B22F2998/00 ,  G11B5/70615 ,  H01F1/0054 ,  H01F1/053 ,  H01F1/09 ,  B22F9/24 ,  B22F1/02

摘要： According to a method for producing a metallic magnetic powder for magnetic recording, which comprises treatment including, in sequence, a step of allowing a reducing agent to act on a metallic magnetic powder comprising particles having a metallic magnetic phase composed mainly of Fe or Fe and Co and containing one or more of rare earth elements (including Y), Al and Si (these are hereinafter referred to as “nonmagnetic ingredient”), in a liquid containing a complexing agent capable of forming a complex with at least one or more of the nonmagnetic ingredients, to thereby make the nonmagnetic ingredient in the powder particles dissolve out into the liquid (dissolution treatment step), a step of heat treatment in a reducing gas atmosphere (re-reduction treatment step), and a step of heat treatment in an oxidizing gas atmosphere (stabilization treatment step), a metallic magnetic powder for magnetic recording, which comprises particles having a particle length of from 10 nm to 45 nm and an axial ratio of 2 or more and in which the tip part of the particles is rounded, is obtained.

摘要翻译： 根据制造用于磁记录的金属磁性粉末的方法，其包括处理步骤包括依次包括使还原剂作用于包含主要由Fe或Fe组成的金属磁性相的颗粒的金属磁性粉末和 Co，并且含有一种或多种稀土元素（包括Y），Al和Si（以下称为“非磁性成分”）在含有能够形成复合物的络合剂的液体中含有至少一种或多种 非磁性成分，从而使粉末颗粒中的非磁性成分溶解在液体中（溶解处理工序），在还原气体气氛中进行热处理的工序（再还原处理工序），热处理工序 氧化气体气氛（稳定化处理步骤），用于磁记录的金属磁性粉末，其包括粒径为10nm至45nm的颗粒 并且获得轴向比为2或更大并且其中颗粒的尖端部分被倒圆的轴向比。

公开(公告)号：US07854807B2

公开(公告)日：2010-12-21

申请号：US11727482

申请日：2007-03-27

申请人： Takayuki Yoshida ,  Masatoshi Nakayama ,  Ryota Igarashi

发明人： Takayuki Yoshida ,  Masatoshi Nakayama ,  Ryota Igarashi

IPC分类号： H01F1/147 ,  H01F1/20

CPC分类号： H01F1/065 ,  G11B5/70615 ,  G11B5/70621 ,  G11B5/714 ,  H01F1/0054 ,  H01F1/061 ,  H01F1/09 ,  Y10T428/2991

摘要： A metal magnetic powder for a magnetic recording medium is provided whose particles have a metal magnetic phase, composed mainly of Fe or Fe plus Co, and an oxide layer, wherein the average major axis length of the powder particles is 10-50 nm, the average particle volume including the oxide layer is 5,000 nm3 or less, the atomic ratio (R+Al+Si)/(Fe+Co) calculated using the content values (at. %) of the elements contained in the powder particles is 20% or less, where R is rare earth element (Y being treated as a rare earth element). The metal magnetic powder is obtained by using a complexing agent and a reducing agent to elute nonmagnetic constituents after firing. The metal magnetic powder exhibits a large saturation magnetization σs for its particle volume while maintaining weatherability comparable to the conventional level and is suitable for a coated-type magnetic recording medium.

摘要翻译： 提供一种用于磁记录介质的金属磁粉，其颗粒具有主要由Fe或Fe + Co组成的金属磁性相和氧化物层，其中粉末颗粒的平均长轴长度为10-50nm， 包含氧化物层的平均粒子体积为5000nm 3以下，使用粉末颗粒中所含的成分的含量值（at。％）计算出的原子比（R + Al + Si）/（Fe + Co）为20％ 或更少，其中R是稀土元素（Y被当作稀土元素处理）。 通过使用络合剂和还原剂在烧制后洗脱非磁性成分得到金属磁性粉末。 金属磁性粉末对于其颗粒体积具有大的饱和磁化强度，同时保持与常规水平相当的耐候性，并且适用于涂覆型磁记录介质。

公开(公告)号：US07482701B2

公开(公告)日：2009-01-27

申请号：US11812154

申请日：2007-06-15

申请人： Tetsuo Ito ,  Takayuki Yoshida ,  Toshiyuki Fukuda ,  Takao Ochi

发明人： Tetsuo Ito ,  Takayuki Yoshida ,  Toshiyuki Fukuda ,  Takao Ochi

IPC分类号： H01L23/28

CPC分类号： H01L21/565 ,  B29C45/14655 ,  B29C45/2708 ,  B29C45/34 ,  H01L21/561 ,  H01L23/3121 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753

摘要： A production equipment includes a substrate 2 placed inside and having a plurality of semiconductor elements 3 mounted thereon, and a resin molding mold 20 having a cavity 21. The mold 20 has resin injection ports 29a and air release ports 30a. Each of the resin injection ports 29a is formed in a top surface portion of the cavity in the mold in association with the corresponding semiconductor element 3. Each of the air release ports 30a is formed around each of the resin injection ports 29a.

摘要翻译： 制造设备包括放置在内部并具有安装在其上的多个半导体元件3的基板2和具有空腔21的树脂模制件20.模具20具有树脂注入口29a和空气释放口30a。 每个树脂注入口29a与相应的半导体元件3相关联地形成在模具中的空腔的顶表面部分中。每个空气释放口30a围绕每个树脂注入口29a形成。

公开(公告)号：US07371458B2

公开(公告)日：2008-05-13

申请号：US11192178

申请日：2005-07-29

申请人： Kenji Masada ,  Takayuki Yoshida ,  Takafumi Amino

发明人： Kenji Masada ,  Takayuki Yoshida ,  Takafumi Amino

IPC分类号： B32B5/16 ,  B05D3/02

CPC分类号： H01F1/061 ,  Y10T428/2982 ,  Y10T428/2991 ,  Y10T428/2993

摘要： A high-reliability iron nitride-based magnetic powder with markedly improved weatherability with respect to deterioration over time of the magnetic properties in fine particles smaller than 25 nm is formed by adhering one or more of the elements Si and P to the surface of an iron nitride-based magnetic powder constituted primarily of Fe16N2 with an average grain size of 25 nm or less, where the total content of Si and P in the magnetic powder may be 0.1% or greater as an atomic ratio with respect to Fe. In particular, the invention provides an iron nitride-based magnetic powder such that the value ΔHc as defined by Equation (1) below is 5% or less and the value Δσs as defined by Equation (2) below is 20% or less. ΔHc=(Hc0−Hc1)/Hc0100  (1) Δσs=(σs0−σs1)/σs0100  (2) Here, Hc1 and σs1 are the coercivity and saturation magnetization, respectively, of the magnetic powder after being kept for one week at a constant temperature and constant humidity of 60° C. and 90% RH. Hc0 and σs0 are the coercivity and saturation magnetization of the magnetic powder before being kept at constant temperature and constant humidity.

摘要翻译： 通过将一个或多个元素Si和P粘附到铁的表面上，形成相对于小于25nm的细小颗粒中的磁特性随着时间的劣化而具有显着改善的耐候性的高可靠性的氮化铁基磁性粉末 主要由平均粒径为25nm以下的平均粒径为25nm以下的氮化物系磁性粉末构成，其中磁性粉末中Si和P的总含量可以 相对于Fe为原子比为0.1％以上。 特别地，本发明提供了一种基于氮化铁的磁性粉末，使得如下面等式（1）所定义的值ΔH3 C 5％或更小，并且值Deltasigma >如下式（2）所定义，为20％以下。 <？in-line-formula description =“In-line Formulas”end =“lead”？> DeltaH =（H c0 < （1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In 线公式“end =”lead“？> Deltasigma =（sigma sigma＆lt; s1＆gt;）sigma＆ SUB> 100（2）<？in-line-formula description =“In-line Formulas”end =“tail”？>这里，H＆gt; c1＆sigma＆sigma＆lt; s1＆lt; 分别在60℃，90％RH的恒温恒湿下保持1周后的磁性粉末的矫顽力和饱和磁化强度。 在保持在恒定温度和恒定湿度之前，磁粉的矫顽力和饱和磁化强度是高斯和高斯。

公开(公告)号：US20060014768A1

公开(公告)日：2006-01-19

申请号：US11150792

申请日：2005-06-10

申请人： Hisashi Kawasaki ,  Hiroyuki Abe ,  Kazuhide Hayakawa ,  Tetsuya Iida ,  Shinichi Kikuchi ,  Takayuki Yamaguchi ,  Toyomichi Nanayama ,  Hironori Kurachi ,  Masahiro Tamaru ,  Yoshikazu Hori ,  Mitsuru Takahashi ,  Takayuki Yoshida ,  Toshiyuki Sakai

发明人： Hisashi Kawasaki ,  Hiroyuki Abe ,  Kazuhide Hayakawa ,  Tetsuya Iida ,  Shinichi Kikuchi ,  Takayuki Yamaguchi ,  Toyomichi Nanayama ,  Hironori Kurachi ,  Masahiro Tamaru ,  Yoshikazu Hori ,  Mitsuru Takahashi ,  Takayuki Yoshida ,  Toshiyuki Sakai

IPC分类号： A61K31/513 ,  C07D405/02

CPC分类号： C07D471/04 ,  A61K31/519 ,  C07C275/30 ,  C07C275/50 ,  C07C2601/16 ,  C07D239/545 ,  C07D239/553 ,  C07D239/62 ,  C07D471/16 ,  C07D487/04 ,  C07F9/53

摘要： The present invention relates to a pyrimidine compound or a pharmaceutically acceptable salt thereof represented by the following formula [I] wherein each symbol is as defined in the specification and a method of therapeutically or prophylactically treating an undesirable cell proliferation, comprising administering such a compound. The compound of the present invention has superior activity in suppressing undesirable cell proliferation, particularly, an antitumor activity, and is useful as an antitumor agent for the prophylaxis or treatment of cancer, rheumatism, and the like. In addition, the compound of the present invention can be a more effective antitumor agent when used in combination with other antitumor agents such as an alkylating agent or metabolism antagonist.

摘要翻译： 本发明涉及由下式[I]表示的嘧啶化合物或其药学上可接受的盐，其中每个符号如说明书中所定义，以及治疗或预防性治疗不期望的细胞增殖的方法，包括施用这种化合物。 本发明的化合物在抑制不期望的细胞增殖，特别是抗肿瘤活性方面具有优异的活性，可用作预防或治疗癌症，风湿病等的抗肿瘤剂。 此外，当与其它抗肿瘤剂如烷化剂或代谢拮抗剂组合使用时，本发明的化合物可以是更有效的抗肿瘤剂。

公开(公告)号：US06184066B2

公开(公告)日：2001-02-06

申请号：US09085545

申请日：1998-05-27

申请人： Toyoji Chino ,  Takayuki Yoshida ,  Kenichi Matsuda

发明人： Toyoji Chino ,  Takayuki Yoshida ,  Kenichi Matsuda

IPC分类号： H01L2144

CPC分类号： H01L21/6835 ,  H01L21/563 ,  H01L24/29 ,  H01L24/81 ,  H01L2221/68359 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2224/83192 ,  H01L2224/9202 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/157 ,  H01S5/0207 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/02248 ,  H01S5/02272 ,  H01S5/026 ,  H01S5/0261 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/0683 ,  H01S5/18305 ,  H01S5/1838 ,  H01S5/18388 ,  H01S5/423 ,  H01S2301/176 ,  H01L2924/01007 ,  H01L2924/01022 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method for fabricating a semiconductor device, in which a semiconductor chip having a first surface and a second surface substantially parallel to each other is mounted on a submount such that the first surface faces the submount, includes: a first step of applying resin to at least one of the semiconductor chip and the submount; a second step of applying a pressure to the semiconductor chip and the submount so that the semiconductor chip and the submount are bonded to each other by the resin, resulting in electrical connection therebetween; and a third step of performing at least one of a film formation process, an etching process, a patterning process, and a washing process for the second surface of the semiconductor chip.

摘要翻译： 一种制造半导体器件的方法，其中具有第一表面和第二表面彼此大致平行的半导体芯片安装在基座上，使得第一表面面向基座，包括：第一步骤，将树脂施加到 半导体芯片和底座中的至少一个; 向半导体芯片和基座施加压力使得半导体芯片和副基座被树脂彼此接合的第二步骤，导致其间的电连接; 以及对半导体芯片的第二表面进行成膜处理，蚀刻处理，图案化处理和清洗处理中的至少一个的第三步骤。

公开(公告)号：US5964284A

公开(公告)日：1999-10-12

申请号：US21343

申请日：1998-02-10

申请人： Kaoru Ikejima ,  Takashi Gotoh ,  Tsuneo Yumikura ,  Michimasa Takeshita ,  Takayuki Yoshida

发明人： Kaoru Ikejima ,  Takashi Gotoh ,  Tsuneo Yumikura ,  Michimasa Takeshita ,  Takayuki Yoshida

IPC分类号： B23K1/00 ,  F28F1/12 ,  F28F1/32

CPC分类号： B23K1/0012 ,  F28F1/122 ,  B23K2201/14 ,  Y10S165/50 ,  Y10S165/518 ,  Y10S165/906 ,  Y10T29/4938 ,  Y10T29/49393

摘要： A heat exchanger for an air conditioner comprises a plurality of heat-transfer tubes arranged in parallel to each other at predetermined intervals, and heat-transfer fins formed by helically winding a plurality of fine wires around the plurality of heat-transfer tubes. Preferably, the heat-transfer tubes are divided into groups of two adjacent heat-transfer tubes (1a, 1b), (1b, 1c), (1c, 1d), . . . , and at least one fine wire fin is wound helically around the two adjacent heat-transfer tubes of each group so that the fine wire fin does not cross other portions of the fine wire fin as viewed along a direction perpendicular to a plane including the axes of the plurality of heat-transfer tubes. When fabricating the heat exchanger, at least either the outer circumferences of the heat-transfer tubes or the outer circumferences of the fine wires are coated with a metal film formed by plating, and then the heat-transfer tubes and the fine wires are interlaced to form a heat exchanging structure. Then, the heat exchanging structure is heated to the melting point of the metal film so that the metal film is melted and the heat-transfer tubes and the fine wires are bonded together by the molten metal film.

摘要翻译： 空调机用热交换器包括以规定间隔彼此平行配置的多个热传输管，以及通过在多个传热管周围螺旋地卷绕多根细线而形成的传热翅片。 优选地，传热管被分成两组相邻的传热管（1a，1b），（1b，1c），（1c，1d）。 。 。 并且至少一个细金属丝翅片围绕每组的两个相邻的传热管螺旋地缠绕，使得当沿着垂直于包括轴线的平面的方向观察时，细线翅片不会与细线翅片的其它部分交叉 的多个传热管。 在制造热交换器时，传热管的外周或细线的外周中的至少一方涂覆有通过电镀形成的金属膜，然后将传热管和细线交织成 形成热交换结构。 然后，将热交换结构加热到金属膜的熔点，使得金属膜熔化，并且传热管和细线通过熔融金属膜接合在一起。

公开(公告)号：US5950757A

公开(公告)日：1999-09-14

申请号：US974155

申请日：1997-11-19

申请人： Norihiro Saita ,  Takayuki Yoshida ,  Tatsuyoshi Maruyama ,  Tadaharu Yokota ,  Toshinori Aihara

发明人： Norihiro Saita ,  Takayuki Yoshida ,  Tatsuyoshi Maruyama ,  Tadaharu Yokota ,  Toshinori Aihara

IPC分类号： B62D5/06 ,  B62D5/065 ,  B62D5/07 ,  F04B49/10 ,  B62D5/30

CPC分类号： B62D5/065 ,  F04B49/10 ,  F04B2205/06 ,  F04B2205/13

摘要： A power steering device includes a hydraulic pump for discharging working fluid, an actuator for producing a steering assisting force by means of working fluid, a hydraulic passage for connecting the hydraulic pump and the actuator, a check valve arranged to the hydraulic passage to allow flow of working fluid from the hydraulic pump to the actuator and preventing flow thereof in the opposite direction, an accumulator connected to the hydraulic passage downstream of the check valve, a pressure switch for detecting a pressure within the hydraulic passage downstream of the check valve, a control unit for controlling the hydraulic pump in response to the pressure switch, and a display for showing an anomaly of the power steering device. When determining the anomaly of the power steering device, the control unit stops the hydraulic pump and/or makes the display show the anomaly.

摘要翻译： 动力转向装置包括用于排放工作流体的液压泵，用于通过工作流体产生转向辅助力的致动器，用于连接液压泵和致动器的液压通道，设置在液压通道上以允许流动的止回阀 工作流体从液压泵到致动器并防止其沿相反方向的流动;连接到止回阀下游的液压通道的蓄能器;用于检测止回阀下游的液压通道内的压力的压力开关; 用于响应于压力开关控制液压泵的控制单元和用于示出动力转向装置的异常的显示器。 当确定动力转向装置的异常时，控制单元停止液压泵和/或使显示器显示异常。

公开(公告)号：US5872393A

公开(公告)日：1999-02-16

申请号：US738744

申请日：1996-10-28

申请人： Hiroyuki Sakai ,  Takayuki Yoshida ,  Yorito Ohta ,  Kaoru Inoue ,  Katsunori Nishii ,  Yoshito Ikeda

发明人： Hiroyuki Sakai ,  Takayuki Yoshida ,  Yorito Ohta ,  Kaoru Inoue ,  Katsunori Nishii ,  Yoshito Ikeda

IPC分类号： H01L23/498 ,  H01L23/66 ,  H05K1/00 ,  H01L29/40

CPC分类号： H01L24/13 ,  H01L23/49894 ,  H01L23/66 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/05599 ,  H01L2224/10135 ,  H01L2224/13011 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/48463 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/75 ,  H01L2224/75301 ,  H01L2224/81007 ,  H01L2224/81136 ,  H01L2224/81139 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81801 ,  H01L2224/83192 ,  H01L24/16 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10155 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13064 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H05K3/4676

摘要： In fabricating an MFIC by mounting a semiconductor chip on a substrate having a microstrip line by MBB bonding, a benzocyclobutene (BCB) film is used as a dielectric film of the microstrip line. By providing a means for preventing the deformation, peeling, and cracking of the BCB film during the fabrication process, the thickness of the dielectric film is held substantially equal even after flip-chip mounting, which reduces impedance fluctuations.

摘要翻译： 在通过MBB接合将半导体芯片安装在具有微带线的基板上制造MFIC时，使用苯并环丁烯（BCB）膜作为微带线的电介质膜。 通过提供在制造过程中防止BCB膜的变形，剥离和破裂的装置，即使在倒装芯片安装之后，电介质膜的厚度也保持基本相等，这降低了阻抗波动。

公开(公告)号：US5821625A

公开(公告)日：1998-10-13

申请号：US636651

申请日：1996-04-23

申请人： Takayuki Yoshida ,  Takashi Otsuka ,  Hiroaki Fujimoto ,  Tadaaki Mimura ,  Ichiro Yamane ,  Takio Yamashita ,  Toshio Matsuki ,  Yoshiaki Kasuga

发明人： Takayuki Yoshida ,  Takashi Otsuka ,  Hiroaki Fujimoto ,  Tadaaki Mimura ,  Ichiro Yamane ,  Takio Yamashita ,  Toshio Matsuki ,  Yoshiaki Kasuga

IPC分类号： H01L21/56 ,  H01L23/552 ,  H01L25/065 ,  H01L25/18 ,  H01L23/02 ,  H01L23/48

CPC分类号： H01L25/0657 ,  H01L21/563 ,  H01L23/552 ,  H01L24/29 ,  H01L25/18 ,  H01L2224/1147 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/73203 ,  H01L2224/83102 ,  H01L2224/83192 ,  H01L2224/92125 ,  H01L2224/92225 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06572 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30107

摘要： The present invention reduces crosstalk, which occurs as a result of interference between signals running in each of respective wiring layers of a first semiconductor chip and a second semiconductor chip stacked surface to surface with a small gap. The semiconductor device includes a first semiconductor chip 1 having a first electrode pad 2 and a first wiring layer 9 in the main surface, and a second semiconductor chip 5 having a second electrode pad 6 and a second wiring layer 10 in the main surface confronting the first semiconductor chip. A bump 4 is provided for electrically coupling the first electrode pad 2 and the second electrode pad 6 together. An insulation layer 8 is disposed between the main surfaces of first semiconductor chip 1 and second semiconductor chip 5. An electro-conductive layer 7 is disposed between the main confronting surfaces of the first semiconductor chip and the second semiconductor chip.

摘要翻译： 本发明减少串扰，其是由于在第一半导体芯片的各个布线层的每一个中运行的信号与以小间隙堆叠在表面之间的第二半导体芯片之间的干扰而发生的。 该半导体器件包括在主表面上具有第一电极焊盘2和第一布线层9的第一半导体芯片1和第二半导体芯片5，第二半导体芯片5在主表面中具有第二电极焊盘6和第二布线层10 第一个半导体芯片。 凸块4被设置用于将第一电极焊盘2和第二电极焊盘6电耦合在一起。 绝缘层8设置在第一半导体芯片1和第二半导体芯片5的主表面之间。导电层7设置在第一半导体芯片和第二半导体芯片的主要相对表面之间。