公开(公告)号：US06610601B2

公开(公告)日：2003-08-26

申请号：US10038980

申请日：2002-01-04

申请人： Hugh Li ,  Diane J. Hymes

发明人： Hugh Li ,  Diane J. Hymes

IPC分类号： H01L2144

CPC分类号： H01L24/85 ,  B08B1/04 ,  H01L21/31111 ,  H01L21/32134 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/0381 ,  H01L2224/05647 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48647 ,  H01L2224/48747 ,  H01L2224/78301 ,  H01L2224/85181 ,  H01L2224/85203 ,  H01L2224/85207 ,  H01L2224/85375 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method is described comprising removing an oxide from a surface and then commencing application of a passivation layer to the surface within 5 seconds of the oxide removal. The surface may be a copper surface which may further comprise a bonding pad surface. Removing the oxide may further comprise applying a solution comprising citric acid or hydrochloric acid. Applying the passivation layer may further comprise applying a solution comprising a member of the azole family where the azole family member may further comprise BTA. The method may also further comprise completely applying the passivation layer 35 seconds after commencing its application.

公开(公告)号：US20030141567A1

公开(公告)日：2003-07-31

申请号：US10383042

申请日：2003-03-06

发明人： Salman Akram

IPC分类号： H01L029/00

CPC分类号： H01L24/85 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L24/50 ,  H01L24/86 ,  H01L2224/02166 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/13099 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48091 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48666 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48766 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48866 ,  H01L2224/48881 ,  H01L2224/85375 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/78 ,  H01L2224/48824 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2224/48781 ,  H01L2224/48681 ,  H01L2224/29099

摘要： An improved wire bond with the bond pads of semiconductor devices and the lead fingers of lead frames or an improved conductor lead of a TAB tape bond with the bond pad of a semiconductor device. More specifically, an improved wire bond wherein the bond pad on a surface of the semiconductor device comprises a layer of copper and at least one layer of metal and/or at least a barrier layer of material between the copper layer and one layer of metal on the copper layer to form a bond pad.

摘要翻译： 与半导体器件的接合焊盘和引线框架的引线指的改进的引线键合或TAB带的改进的导体引线与半导体器件的接合焊盘结合。 更具体地，改进的引线键合，其中半导体器件的表面上的接合焊盘包括铜层和至少一层金属和/或至少在铜层和一层金属之间的材料的阻挡层的层 铜层形成接合垫。

公开(公告)号：US06410435B1

公开(公告)日：2002-06-25

申请号：US09410686

申请日：1999-10-01

申请人： Vivian W. Ryan

发明人： Vivian W. Ryan

IPC分类号： H01L2144

CPC分类号： H01L21/76849 ,  H01L21/76843 ,  H01L23/53238 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/85375 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for manufacturing integrated circuits; particularly, a method for fabricating a copper interconnect system and a copper interconnect system, having a layer of CrO, fabricated by the method.

摘要翻译： 一种制造集成电路的方法; 特别是通过该方法制造的具有CrO层的铜互连系统和铜互连系统的制造方法。

公开(公告)号：US20020058417A1

公开(公告)日：2002-05-16

申请号：US10038980

申请日：2002-01-04

发明人： Hugh Li ,  Diane J. Hymes

IPC分类号： H01L021/44

CPC分类号： H01L24/85 ,  B08B1/04 ,  H01L21/31111 ,  H01L21/32134 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/0381 ,  H01L2224/05647 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48647 ,  H01L2224/48747 ,  H01L2224/78301 ,  H01L2224/85181 ,  H01L2224/85203 ,  H01L2224/85207 ,  H01L2224/85375 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method is described comprising removing an oxide from a surface and then commencing application of a passivation layer to the surface within 5 seconds of the oxide removal. The surface may be a copper surface which may further comprise a bonding pad surface. Removing the oxide may further comprise applying a solution comprising citric acid or hydrochloric acid. Applying the passivation layer may further comprise applying a solution comprising a member of the azole family where the azole family member may further comprise BTA. The method may also further comprise completely applying the passivation layer 35 seconds after commencing its application.

摘要翻译： 描述了一种方法，其包括从表面除去氧化物，然后在氧化物去除的5秒内开始将钝化层施加到表面。 表面可以是可以进一步包括焊盘表面的铜表面。 除去氧化物还可以包括施加包含柠檬酸或盐酸的溶液。 施加钝化层还可以包括施加包含唑族的成员的溶液，其中唑类家族成员还可以包含BTA。 该方法还可以进一步包括在开始应用之后35秒完全施加钝化层。

公开(公告)号：US06218732B1

公开(公告)日：2001-04-17

申请号：US09354510

申请日：1999-07-15

申请人： Stephen W. Russell ,  Jiong-Ping Lu

发明人： Stephen W. Russell ,  Jiong-Ping Lu

IPC分类号： H01L2348

CPC分类号： H01L24/02 ,  H01L24/45 ,  H01L2224/04042 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/85375 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01084 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2224/48

摘要： An integrated circuit utilizing copper wiring has copper bond pads which are covered with a passivation layer to prevent unwanted reactions of the copper with metals which are bonded to it. The passivation layer can be an intermetallic of copper and titanium or a stacked layer of CuTix/TiN. Various nitrides can also be used, such as tungsten nitride, tantalum nitride, titanium silicon nitride, tungsten silicon nitride, and tantalum silicon nitride.

摘要翻译： 使用铜布线的集成电路具有铜焊盘，其被钝化层覆盖以防止铜与被粘合的金属的不期望的反应。 钝化层可以是铜和钛的金属间化合物或CuTix / TiN的堆叠层。 还可以使用氮化物，氮化钨，氮化钽，氮化硅，氮化钨，氮化钽等氮化物。

公开(公告)号：US6164523A

公开(公告)日：2000-12-26

申请号：US108448

申请日：1998-07-01

申请人： Joseph K. Fauty ,  James P. Letterman, Jr. ,  Michael J. Seddon

发明人： Joseph K. Fauty ,  James P. Letterman, Jr. ,  Michael J. Seddon

IPC分类号： H01L21/60 ,  B23K20/00 ,  B23K20/16 ,  H01L21/607 ,  H01L23/485 ,  B23K31/00 ,  B23K31/02 ,  H05K3/00

CPC分类号： H01L24/85 ,  B23K20/004 ,  B23K20/16 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05157 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/43848 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45624 ,  H01L2224/45647 ,  H01L2224/4847 ,  H01L2224/48739 ,  H01L2224/48755 ,  H01L2224/48766 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48855 ,  H01L2224/48866 ,  H01L2224/48871 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2224/85815 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/2076 ,  Y10T29/49149 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2224/48771 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/00015

摘要： A method of manufacturing an electronic component includes providing a substrate (101), forming a semiconductor device in the substrate (101), depositing a metal layer (107) over the substrate (101) and electrically coupled to the semiconductor device, depositing a layer (108) of solder over the metal layer, and wire bonding a wire (109) to the metal layer (107).

摘要翻译： 一种制造电子部件的方法包括：提供基板（101），在所述基板（101）中形成半导体器件，在所述基板（101）上方沉积金属层（107）并电耦合到所述半导体器件，沉积层 （108）焊接在所述金属层上，并且将导线（109）引线接合到所述金属层（107）。

公开(公告)号：US09685347B2

公开(公告)日：2017-06-20

申请号：US14532129

申请日：2014-11-04

申请人： Infineon Technologies AG

发明人： Jochen Hilsenbeck ,  Jens Peter Konrath ,  Stefan Krivec

IPC分类号： H01L23/532 ,  H01L21/3213 ,  H01L21/285 ,  H01L21/768 ,  H01L29/808 ,  H01L29/417 ,  H01L29/10 ,  H01L23/00 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L21/32133 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76852 ,  H01L23/53238 ,  H01L24/05 ,  H01L29/1066 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/8083 ,  H01L2224/022 ,  H01L2224/04042 ,  H01L2224/05007 ,  H01L2224/05547 ,  H01L2224/05647 ,  H01L2224/85375 ,  H01L2924/12036 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/0001 ,  H01L2924/00014

摘要： A semiconductor device comprises a semiconductor body with a front face and a back face, having an active zone located at the front face, a front surface metallization layer having a front face and a back face directed towards the active zone, the front surface metallization layer being provided on the front face of the semiconductor body and being electrically connected to the active zone, and a first barrier layer, comprising amorphous metal nitride, located between the active zone and the metallization layer. Further, a method for producing such a device is provided.

公开(公告)号：US09508803B2

公开(公告)日：2016-11-29

申请号：US14400101

申请日：2013-05-10

申请人： ROHM CO., LTD.

发明人： Yuki Nakano ,  Ryota Nakamura

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L29/06 ,  H01L29/40 ,  H01L29/16 ,  H01L29/45 ,  H01L29/66 ,  H01L23/00 ,  H01L21/283 ,  H01L29/10 ,  H01L29/808 ,  H01L29/417 ,  H01L29/739 ,  H01L23/495 ,  H01L25/18

CPC分类号： H01L29/1608 ,  H01L21/283 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L25/18 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/7827 ,  H01L29/8083 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/85375 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

摘要： [Problem] To provide a semiconductor device in which the surface of a metal electrode arranged on the outermost surface can be made flat or smooth, and a method for producing said semiconductor device.[Solution] This semiconductor device (1) comprises: an SiC epitaxial layer (3) that has an uneven shape formed, on the basis of a height difference (H1), on the outermost surface where a semiconductor element (MOSFET) is arranged; and a source electrode (13) made of a metal material and formed on the SiC epitaxial layer (3). A polysilicon layer (12) having a surface (121) that is smoother than said uneven shape is provided between the surface (31) of the SiC epitaxial layer (3) and the source electrode (13).

摘要翻译： 该半导体器件（1）包括：在布置有半导体元件（MOSFET）的最外表面上，基于高差（H1）形成具有不平坦形状的SiC外延层（3） 和由金属材料制成并形成在SiC外延层（3）上的源电极（13）。 在SiC外延层（3）的表面（31）和源电极（13）之间设置具有比所述不平坦形状更平滑的表面（121）的多晶硅层（12）。

公开(公告)号：US09034677B2

公开(公告)日：2015-05-19

申请号：US14057909

申请日：2013-10-18

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsin-Ting Huang ,  Jung-Huei Peng ,  Shang-Ying Tsai ,  Yao-Te Huang ,  Ming-Tung Wu ,  Ping-Yin Liu ,  Xin-Hua Huang ,  Yuan-Chih Hsieh

IPC分类号： H01L21/02 ,  B81C1/00 ,  H01L23/00

CPC分类号： B81C1/00777 ,  B81B2207/07 ,  B81C1/00896 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L2224/03001 ,  H01L2224/03009 ,  H01L2224/04042 ,  H01L2224/05571 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/83805 ,  H01L2224/85375 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/16235 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05552

摘要： The present disclosure provides a method including providing a first substrate; and forming a microelectromechanical system (MEMS) device on a first surface of the first substrate. A bond pad is formed on at least one bonding site on the first surface of the first substrate. The bonding site is recessed from the first surface. Thus, a top surface of the bond pad may lie below the plane of the top surface of the substrate. A device with recessed connective element(s) (e.g., bond pad) is also described. In further embodiments, a protective layer is formed on the recessed connective element during dicing of a substrate.

摘要翻译： 本公开提供了一种方法，包括提供第一基板; 以及在所述第一基板的第一表面上形成微机电系统（MEMS）装置。 在第一基板的第一表面上的至少一个结合部位上形成接合焊盘。 接合部位从第一表面凹陷。 因此，接合焊盘的顶表面可以位于衬底的顶表面的平面之下。 还描述了具有凹入的连接元件（例如，接合焊盘）的器件。 在另外的实施例中，在衬底切割期间，在凹入的连接元件上形成保护层。

公开(公告)号：US08987021B2

公开(公告)日：2015-03-24

申请号：US13911450

申请日：2013-06-06

申请人： Toyoda Gosei Co., Ltd.

发明人： Mineo Okuyama

IPC分类号： H01L33/62 ,  H01L23/00

CPC分类号： H01L33/62 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05144 ,  H01L2224/05655 ,  H01L2224/05681 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48463 ,  H01L2224/48655 ,  H01L2224/48681 ,  H01L2224/49107 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2224/83862 ,  H01L2224/8501 ,  H01L2224/85013 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2224/92247 ,  H01L2924/181 ,  H01L2933/0033 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/0715 ,  H01L2924/00

摘要： A manufacturing method of a light-emitting device includes: a die-bonding process in which a semiconductor light emitting element is placed on a bonding target member via an adhesive containing a silicone resin so that a surface opposite to an exposure surface faces the bonding target member, and the adhesive is heated to bond the semiconductor light emitting element to the bonding target member; and a wire-bonding process in which a wire is connected to the exposure surface. The semiconductor light emitting element includes a laminated semiconductor layer having a light emitting layer and an electrode including a metal layer containing Au and provided on the laminated semiconductor layer and a covering layer containing Ni or Ta and covering the metal layer, the thickness of the covering layer being set smaller than 100 nm and the exposure surface to expose the covering layer to the outside being formed.

摘要翻译： 发光装置的制造方法包括：芯片接合工艺，其中半导体发光元件通过含有硅树脂的粘合剂放置在接合目标构件上，使得与曝光表面相对的表面面向接合靶 并且粘合剂被加热以将半导体发光元件结合到接合目标构件; 以及将导线连接到曝光表面的引线接合工艺。 半导体发光元件包括具有发光层的层叠半导体层和包含Au的金属层并设置在层叠半导体层上的电极和包含Ni或Ta并覆盖金属层的覆盖层，覆盖层的厚度 层被设定为小于100nm，并且曝光表面将覆盖层暴露于形成的外部。