公开(公告)号：US20050127518A1

公开(公告)日：2005-06-16

申请号：US11047652

申请日：2005-02-02

申请人： Cyril Cabral ,  Stefanie Chiras ,  Emanuel Cooper ,  Hariklia Deligianni ,  Andrew Kellock ,  Judith Rubino ,  Roger Tsai

发明人： Cyril Cabral ,  Stefanie Chiras ,  Emanuel Cooper ,  Hariklia Deligianni ,  Andrew Kellock ,  Judith Rubino ,  Roger Tsai

IPC分类号： B32B15/04 ,  C25D3/56 ,  C25D9/08 ,  H01L21/288 ,  H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L23/532 ,  H01L29/40

CPC分类号： H01L21/2885 ,  C25D9/08 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2224/05007

摘要： A composite material comprising a layer containing copper, and an electrodeposited CoWP film on the copper layer. The CoWP film contains from 11 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a method of making an interconnect structure comprising: providing a trench or via within a dielectric material, and a conducting metal containing copper within the trench or the via; and forming a CoWP film by electrodeposition on the copper layer. The CoWP film contains from 10 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a interconnect structure comprising a dielectric layer in contact with a metal layer; an electrodeposited CoWP film on the metal layer, and a copper layer on the CoWP film.

公开(公告)号：US20050006242A1

公开(公告)日：2005-01-13

申请号：US10615794

申请日：2003-07-10

申请人： Panayotis Andricacos ,  Dean Chung ,  Hariklia Deligianni ,  James Fluegel ,  Keith Kwietniak ,  Peter Locke ,  Darryl Restaino ,  Soon-Cheon Seo ,  Philippe Vereecken ,  Erick Walton

发明人： Panayotis Andricacos ,  Dean Chung ,  Hariklia Deligianni ,  James Fluegel ,  Keith Kwietniak ,  Peter Locke ,  Darryl Restaino ,  Soon-Cheon Seo ,  Philippe Vereecken ,  Erick Walton

IPC分类号： C23C18/16 ,  C25D21/12 ,  C25D21/18

CPC分类号： C23C18/1617 ,  C23C18/1683 ,  C25D21/12 ,  C25D21/18

摘要： An improved method of stabilizing wet chemical baths is disclosed. Typically such baths are used in processes for treating workpieces, for example, plating processes for plating metal onto substrates. In particular, the present invention relates to copper plating baths. More particularly, the present invention relates to the stability of copper plating baths. More particularly, the present invention relates to prevention of void formation by monitoring the accumulation of deleterious by-products in copper plating baths.

摘要翻译： 公开了一种稳定湿化学浴的改进方法。 通常，这种浴用于处理工件的工艺中，例如用于将金属电镀到基底上的电镀工艺。 特别地，本发明涉及镀铜浴。 更具体地说，本发明涉及镀铜浴的稳定性。 更具体地，本发明涉及通过监测铜电镀浴中有害副产物的积累来防止空隙形成。

公开(公告)号：US06261426B1

公开(公告)日：2001-07-17

申请号：US09235798

申请日：1999-01-22

申请人： Cyprian E. Uzoh ,  Hariklia Deligianni ,  John O. Dukovic

发明人： Cyprian E. Uzoh ,  Hariklia Deligianni ,  John O. Dukovic

IPC分类号： C25D1700

CPC分类号： C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  C25D17/008

摘要： An apparatus and method for an electrodeposition or electroetching system. A thin metal film is deposited or etched by electrical current through an electrolytic bath flowing toward and in contact with a target on which the film is disposed. Uniformity of deposition or etching is promoted, particularly at the edge of the target film, by baffle and shield members through which the bath passes as it flows toward the target. The baffle has a plurality of openings disposed to control the localized current flow across the cross section of the workpiece/wafer. Disposed near the edge of the target, the shield member shapes the potential field and the current line so that it is uniform.

摘要翻译： 电沉积或电蚀系统的装置和方法。 通过电流沉积或蚀刻薄的金属膜，所述电解液流向与其上设置有膜的靶接触并与其接触的电解槽。 特别是在目标膜的边缘，通过挡板和屏蔽构件促进了沉积或蚀刻的均匀性，当浴流向靶时通过该挡板和屏蔽构件通过。 挡板具有多个开口，其设置成控制横跨工件/晶片横截面的局部电流。 设置在目标边缘附近，屏蔽构件使势场和当前线形成均匀。

公开(公告)号：US08926805B2

公开(公告)日：2015-01-06

申请号：US13561599

申请日：2012-07-30

申请人： Veeraraghavan S. Basker ,  Eduard Cartier ,  Hariklia Deligianni ,  Rajarao Jammy ,  Vamsi K. Paruchuri

发明人： Veeraraghavan S. Basker ,  Eduard Cartier ,  Hariklia Deligianni ,  Rajarao Jammy ,  Vamsi K. Paruchuri

IPC分类号： C25D17/02 ,  C25D5/18 ,  C25D5/02 ,  H01L21/288 ,  C25D17/00 ,  H01L21/762

CPC分类号： C25D5/18 ,  C25D5/024 ,  C25D17/001 ,  C25D17/002 ,  C25D17/005 ,  H01L21/2885 ,  H01L21/7624

摘要： An electroplating apparatus and method for depositing a metallic layer on the surface of a wafer is provided wherein said apparatus and method do not require physical attachment of an electrode to the wafer. The surface of the wafer to be plated is positioned to face the anode and a plating fluid is provided between the wafer and the electrodes to create localized metallic plating. The wafer may be positioned to physically separate and lie between the anode and cathode so that one side of the wafer facing the anode contains a catholyte solution and the other side of the wafer facing the cathode contains an anolyte solution. Alternatively, the anode and cathode may exist on the same side of the wafer in the same plating fluid. In one example, the anode and cathode are separated by a semi permeable membrane.

摘要翻译： 提供了一种用于在晶片的表面上沉积金属层的电镀设备和方法，其中所述设备和方法不需要将电极物理附接到晶片。 要镀覆的晶片的表面被定位成面对阳极，并且在晶片和电极之间设置电镀液以产生局部金属电镀。 晶片可以被定位成物理分离并且位于阳极和阴极之间，使得面向阳极的晶片的一侧包含阴极电解液，并且晶片的面向阴极的另一侧包含阳极电解液。 或者，阳极和阴极可以存在于同一电镀液中晶片的同一侧。 在一个实例中，阳极和阴极被半透膜隔开。

公开(公告)号：US08790804B2

公开(公告)日：2014-07-29

申请号：US13349255

申请日：2012-01-12

申请人： Hariklia Deligianni ,  Harold J. Hovel ,  Fei Liu

发明人： Hariklia Deligianni ,  Harold J. Hovel ,  Fei Liu

IPC分类号： H01M10/50 ,  H01M2/00 ,  H01H37/76

CPC分类号： H01M2/204 ,  H01G11/16 ,  H01M2/348 ,  H01M10/0436 ,  H01M10/052 ,  H01M10/0562 ,  H01M10/058 ,  H01M2200/103 ,  Y10T29/49108 ,  Y10T29/49115

摘要： A useful lifetime of an energy storage device can be extended by providing a series connection of a battery cell and an self-programming fuse. A plurality of series connections of a battery cell and an self-programming fuse can then be connected in a parallel connection to expand the energy storage capacity of the energy storage device. Each self-programming fuse can be a strip of a metal semiconductor alloy material, which electromigrates when a battery cell is electrically shorted and causes increases in the amount of electrical current therethrough. Thus, each self-programming fuse is a self-programming circuit that opens once the battery cell within the same series connection is shorted.

摘要翻译： 可以通过提供电池单元和自编程保险丝的串联连接来扩展能量存储装置的有用寿命。 然后可以并联连接电池单元和自编程保险丝的多个串联连接以扩大能量存储装置的能量存储容量。 每个自编程保险丝可以是金属半导体合金材料的条带，当电池单元电气短路并导致电流量增加时，电极会电流化。 因此，每个自编程保险丝是一个自编程电路，一旦同一串联连接中的电池单元短路，该自编程电路就会断开。

公开(公告)号：US20130062209A1

公开(公告)日：2013-03-14

申请号：US13612661

申请日：2012-09-12

申请人： Charles L. Arvin ,  Raschid J. Bezama ,  Glen N. Biggs ,  Hariklia Deligianni ,  Tracy A. Tong

发明人： Charles L. Arvin ,  Raschid J. Bezama ,  Glen N. Biggs ,  Hariklia Deligianni ,  Tracy A. Tong

IPC分类号： C25D17/02 ,  C25D21/12 ,  C25D17/12

CPC分类号： C25D17/001 ,  C25D5/04 ,  C25D7/123 ,  C25D17/004 ,  C25D17/02 ,  C25D17/12

摘要： An electroplating apparatus including a plating tank for containing a plating electrolyte. A counter electrode, e.g., anode, is present in a first portion of the plating tank. A cathode system is present in a second portion of the plating tank. The cathode system includes a working electrode and a thief electrode. The thief electrode is present between the working electrode and the counter electrode. The thief electrode includes an exterior face that is in contact with the plating electrolyte that is offset from the plating surface of the working electrode. In one embodiment, the thief electrode overlaps a portion of the working electrode about the perimeter of the working electrode. In one embodiment, a method is provided of using the aforementioned electroplating apparatus that provides increased uniformity in the plating thickness.

摘要翻译： 一种电镀设备，包括用于容纳电镀电解质的电镀槽。 对电极，例如阳极，存在于镀槽的第一部分中。 阴极系统存在于镀槽的第二部分中。 阴极系统包括工作电极和小偷电极。 小电极存在于工作电极和对电极之间。 防窃电极包括与电镀电解质接触的外表面，其与工作电极的电镀表面偏移。 在一个实施例中，窃电电极围绕工作电极的周边重叠一部分工作电极。 在一个实施例中，提供了使用提供镀层厚度增加的均匀性的上述电镀设备的方法。

公开(公告)号：US20120292771A1

公开(公告)日：2012-11-22

申请号：US13564414

申请日：2012-08-01

申请人： Hariklia Deligianni ,  Xiaoyan Shao

发明人： Hariklia Deligianni ,  Xiaoyan Shao

IPC分类号： H01L23/48

CPC分类号： H01L23/53242 ,  C25D3/50 ,  C25D5/50 ,  H01L21/2885 ,  H01L21/76877 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10T428/12007 ,  H01L2924/00

摘要： A contact rhodium structure is fabricated by a process that comprises obtaining a substrate having a dielectric layer thereon, wherein the dielectric layer has cavities therein into which the contact rhodium is to be deposited; depositing a seed layer in the cavities and on the dielectric layer; and depositing the rhodium by electroplating from a bath comprising a rhodium salt; an acid and a stress reducer; and then optionally annealing the structure.

摘要翻译： 通过包括获得其上具有电介质层的衬底的方法制造接触铑结构，其中介电层具有其中将沉积接触铑的空腔; 将种子层沉积在空腔中和介电层上; 并通过电镀从含铑盐的浴中沉积铑; 酸和减压剂; 然后可选地退火该结构。

公开(公告)号：US20120061247A1

公开(公告)日：2012-03-15

申请号：US12878811

申请日：2010-09-09

申请人： Shafaat Ahmed ,  Hariklia Deligianni

发明人： Shafaat Ahmed ,  Hariklia Deligianni

IPC分类号： C25D5/00 ,  C25D5/50 ,  C23C28/00 ,  C25D9/04

CPC分类号： C25D9/04 ,  C25D3/54 ,  C25D3/56 ,  C25D5/50 ,  C25D7/12 ,  H01L31/0272 ,  H01L31/0322 ,  Y02E10/541

摘要： Techniques for electrodepositing selenium (Se)-containing films are provided. In one aspect, a method of preparing a Se electroplating solution is provided. The method includes the following steps. The solution is formed from a mixture of selenium oxide; an acid selected from the group consisting of alkane sulfonic acid, alkene sulfonic acid, aryl sulfonic acid, heterocyclic sulfonic acid, aromatic sulfonic acid and perchloric acid; and a solvent. A pH of the solution is then adjusted to from about 2.0 to about 3.0. The pH of the solution can be adjusted to from about 2.0 to about 3.0 by adding a base (e.g., sodium hydroxide) to the solution. A Se electroplating solution, an electroplating method and a method for fabricating a photovoltaic device are also provided.

摘要翻译： 提供了用于电沉积含硒（Se）的膜的技术。 一方面，提供了一种制备Se电镀溶液的方法。 该方法包括以下步骤。 溶液由氧化硒的混合物形成; 选自烷烃磺酸，烯烃磺酸，芳基磺酸，杂环磺酸，芳族磺酸和高氯酸的酸; 和溶剂。 然后将溶液的pH调节至约2.0至约3.0。 通过向溶液中加入碱（例如氢氧化钠），可将溶液的pH调节至约2.0至约3.0。 还提供了Se电镀溶液，电镀方法和制造光伏器件的方法。

公开(公告)号：US20100218814A1

公开(公告)日：2010-09-02

申请号：US12556335

申请日：2009-09-09

申请人： Hariklia Deligianni ,  Harold J. Hovel ,  Raman Vaidvanathan

发明人： Hariklia Deligianni ,  Harold J. Hovel ,  Raman Vaidvanathan

IPC分类号： H01L31/0216 ,  H01L31/18 ,  H01L21/3205 ,  H01L21/31

CPC分类号： H01L31/0749 ,  H01L31/0322 ,  Y02E10/541

摘要： A method of reducing the loss of elements of a photovoltaic thin film structure during an annealing process, includes depositing a thin film on a substrate, wherein the thin film includes a single chemical element or a chemical compound, coating the thin film with a protective layer to form a coated thin film structure, wherein the protective layer prevents part of the single chemical element or part of the chemical compound from escaping during an annealing process, and annealing the coated thin film structure to form a coated photovoltaic thin film structure, wherein the coated photovoltaic thin film retains the part of the single chemical element or the part of the chemical compound that is prevented from escaping during the annealing by the protective layer.

摘要翻译： 一种在退火工艺中减少光伏薄膜结构元件损耗的方法，包括在衬底上沉积薄膜，其中薄膜包括单一化学元素或化合物，用保护层涂覆薄膜 以形成涂覆的薄膜结构，其中所述保护层防止在退火过程期间所述单一化学元素或所述化学化合物的一部分的部分逸出，并且使所述涂覆的薄膜结构退火以形成涂覆的光伏薄膜结构，其中 涂覆的光伏薄膜保留在保护层退火期间防止单一化学元素或化学化合物部分逸出的部分。

公开(公告)号：US07638406B2

公开(公告)日：2009-12-29

申请号：US11320375

申请日：2005-12-28

申请人： Daniel C. Edelstein ,  Panayotis C. Andricacos ,  John M. Cotte ,  Hariklia Deligianni ,  John H. Magerlein ,  Kevin S. Petrarca ,  Kenneth J. Stein ,  Richard P. Volant

发明人： Daniel C. Edelstein ,  Panayotis C. Andricacos ,  John M. Cotte ,  Hariklia Deligianni ,  John H. Magerlein ,  Kevin S. Petrarca ,  Kenneth J. Stein ,  Richard P. Volant

IPC分类号： H01L21/20

CPC分类号： H01L24/12 ,  H01L23/5227 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L27/08 ,  H01L28/10 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05007 ,  H01L2224/05014 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05084 ,  H01L2224/05555 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method of forming an inductor. The method includes: forming a dielectric layer on a substrate; forming a lower trench in the dielectric layer; forming a liner in the lower trench and on the dielectric layer; forming a Cu seed layer over the liner; forming a resist layer on the Cu seed layer; forming an upper trench in the resist layer; electroplating Cu to completely fill the lower trench and at least partially fill the upper trench; removing the resist layer; selectively forming a passivation layer on all exposed Cu surfaces; selectively removing the Cu seed layer from regions of the liner; and removing the thus exposed regions of the liner from the dielectric layer, wherein a top surface of the inductor extends above a top surface of the dielectric layer, the passivation layer remaining on regions of sidewalls of the inductor above the top surface of the dielectric layer.

摘要翻译： 一种形成电感器的方法。 该方法包括：在基板上形成电介质层; 在介电层中形成下沟槽; 在下沟槽和电介质层上形成衬垫; 在衬套上形成Cu籽晶层; 在Cu籽晶层上形成抗蚀剂层; 在抗蚀剂层中形成上沟槽; 电镀Cu以完全填充下沟槽并且至少部分地填充上沟槽; 去除抗蚀剂层; 在所有暴露的Cu表面上选择性地形成钝化层; 从所述衬垫的区域选择性地去除所述Cu籽晶层; 以及从所述电介质层去除所述衬垫的这样暴露的区域，其中所述电感器的顶表面延伸到所述电介质层的顶表面之上，所述钝化层保留在所述电介质的位于所述电介质层的顶表面之上的侧壁的区域上 。