公开(公告)号：US06946387B2

公开(公告)日：2005-09-20

申请号：US10650974

申请日：2003-08-29

申请人： Junichi Wada ,  Atsuko Sakata ,  Tomio Katata ,  Takamasa Usui ,  Masahiko Hasunuma ,  Hideki Shibata ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Katsuya Okumura

发明人： Junichi Wada ,  Atsuko Sakata ,  Tomio Katata ,  Takamasa Usui ,  Masahiko Hasunuma ,  Hideki Shibata ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Katsuya Okumura

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76867 ,  H01L21/2855 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76864 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76886 ,  H01L21/76889

摘要： A method of manufacturing semiconductor device which comprises the steps of forming an insulating film on an Si substrate provided with a wiring layer, forming a contact hole connected to the wiring layer and a wiring groove in the insulating film, filling the contact hole with an Si film, successively forming an Al film and a Ti film all over the substrate, performing a heat treatment thereby to substitute the Al film for the Ti film, and to allow the Si film to be absorbed by the Ti film, whereby filling the contact hole and wiring groove with the Al film, and removing a Ti/Ti silicide which is consisting of Ti silicide formed through the absorption of the Si film by the Ti film and a superfluous Ti, whereby filling the contact hole with an Al plug and filling the wiring groove with an Al wiring.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在具有布线层的Si衬底上形成绝缘膜，形成与布线层连接的接触孔和绝缘膜中的布线槽，用Si 膜，依次在基板上形成Al膜和Ti膜，进行热处理，从而将Al膜替代为Ti膜，并使Si膜被Ti膜吸收，由此填充接触孔 和Al膜的布线槽，除去由Ti膜和多余Ti吸收Si膜形成的由Ti硅化物构成的Ti / Ti硅化物，由此用Al塞填充接触孔，并填充 布线槽与Al接线。

公开(公告)号：US20050124164A1

公开(公告)日：2005-06-09

申请号：US11033871

申请日：2005-01-13

申请人： Atsuko Sakata ,  Keiichi Sasaki ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Hirotaka Nishino

发明人： Atsuko Sakata ,  Keiichi Sasaki ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Hirotaka Nishino

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/485 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L24/03 ,  H01L23/481 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/742 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/11001 ,  H01L2224/1131 ,  H01L2224/11334 ,  H01L2224/1147 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2924/00011 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/81805

摘要： After a barrier film is formed on a pad electrode, Ni particles having a diameter of 2 μm or less are selectively deposited on the barrier film, thereby forming a Ni fine particle film. Then, a bump electrode made of a solder ball is provided on the pad electrode through the Ni fine particle film. Thereafter, the bump electrode is melted by a heat treatment to join the Ni fine particle film to the bump electrode. Thus, a bump electrode structure is finished.

摘要翻译： 在焊盘电极上形成阻挡膜之后，在阻挡膜上选择性地沉积直径为2μm以下的Ni粒子，形成Ni微粒膜。 然后，通过Ni微粒膜在焊盘电极上设置由焊料球形成的突起电极。 此后，通过热处理使凸块电极熔融，将Ni微粒膜与凸点电极接合。 因此，凸块电极结构完成。

公开(公告)号：US20050118516A1

公开(公告)日：2005-06-02

申请号：US11030963

申请日：2005-01-10

申请人： Katsuya Okumura ,  Kazuya Nagaseki ,  Naoyuki Satosh

发明人： Katsuya Okumura ,  Kazuya Nagaseki ,  Naoyuki Satosh

IPC分类号： G03F1/20 ,  G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  H01L21/3205 ,  G03B27/42 ,  G03C5/00 ,  G03F9/00 ,  H01L21/4763

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F1/50 ,  H01J37/3174 ,  H01J2237/31788 ,  H01J2237/31794

摘要： The present invention is a transfer mask for exposure comprising a mask portion having a plurality of cells, each of which an opening of a predetermined pattern is formed in. When one side of the plurality of cells is exposed to a charged particle beam, each of the plurality of cells is adapted to make the charged particle beam pass through itself to the other side thereof based on the pattern of the opening formed in the cell. Thus, when a substrate to be processed is arranged on the other side of the cell, the pattern of the opening formed in the cell is transferred to the substrate to be processed and hence an exposure pattern is formed on the substrate to be processed. The feature of the present invention is that a part of or all the plurality of cells can be exchanged at the mask portion.

摘要翻译： 本发明是用于曝光的转印掩模，其包括具有多个单元的掩模部分，每个单元都形成有预定图案的开口。当多个单元的一侧暴露于带电粒子束时， 多个单元适于基于形成在单元中的开口的图案使带电粒子束自身通过其自身的另一侧。 因此，当待处理基板布置在单元的另一侧时，形成在单元中的开口的图案被转移到待处理的基板，因此在待处理的基板上形成曝光图案。 本发明的特征在于，可以在掩模部分更换多个单元的一部分或全部。

公开(公告)号：US06846750B1

公开(公告)日：2005-01-25

申请号：US09604724

申请日：2000-06-28

申请人： Tokuhisa Ohiwa ,  Shoji Seta ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Akihiro Kojima ,  Junko Ohuchi ,  Tsukasa Azuma ,  Hideo Ichinose ,  Ichiro Mizushima

发明人： Tokuhisa Ohiwa ,  Shoji Seta ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Akihiro Kojima ,  Junko Ohuchi ,  Tsukasa Azuma ,  Hideo Ichinose ,  Ichiro Mizushima

IPC分类号： H01L21/302 ,  H01L21/033 ,  H01L21/30 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/316 ,  H01L21/768 ,  H01L21/461

CPC分类号： H01L21/76802 ,  H01L21/0331 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/76816 ,  H01L21/7682

摘要： According to the present invention, there is provided a method of manufacturing a semiconductor device, where a soluble thin film which is soluble in a dissolving liquid is used. According to the method of the present invention, when a soluble thin film is formed between a film to be processed which should be patterned and a mask pattern, it becomes possible to remove the mask pattern by lifting-off. On the other hand, when the thin film is used for a dummy layer for forming an air wiring structure, the dummy layer can be removed without performing ashing using oxygen plasma.

摘要翻译： 根据本发明，提供一种制造半导体器件的方法，其中使用可溶于溶解液的可溶性薄膜。 根据本发明的方法，当在要被图案化的被处理膜和掩模图案之间形成可溶性薄膜时，可以通过剥离来去除掩模图案。 另一方面，当薄膜用于形成空气布线结构的虚拟层时，可以去除虚拟层而不用氧等离子体进行灰化。

公开(公告)号：US06809421B1

公开(公告)日：2004-10-26

申请号：US09377486

申请日：1999-08-20

申请人： Nobuo Hayasaka ,  Katsuya Okumura ,  Keiichi Sasaki ,  Mie Matsuo

发明人： Nobuo Hayasaka ,  Katsuya Okumura ,  Keiichi Sasaki ,  Mie Matsuo

IPC分类号： H01L2348

CPC分类号： H01L23/642 ,  H01L21/76898 ,  H01L23/367 ,  H01L23/481 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13025 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15331 ,  H01L2924/00

摘要： A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.

摘要翻译： 公开了一种多芯片半导体器件，其中堆叠芯片，每个芯片包括形成在顶部的半导体衬底和电路部件，以及形成在半导体衬底的顶部上的层间绝缘膜。 至少一个芯片具有穿过半导体衬底和层间绝缘膜的通孔中形成的金属的连接插头。 具有连接插头的芯片通过该连接插头与另一个芯片电连接。

公开(公告)号：US06740590B1

公开(公告)日：2004-05-25

申请号：US09531163

申请日：2000-03-17

申请人： Hiroyuki Yano ,  Gaku Minamihaba ,  Yukiteru Matsui ,  Katsuya Okumura ,  Akira Iio ,  Masayuki Hattori

发明人： Hiroyuki Yano ,  Gaku Minamihaba ,  Yukiteru Matsui ,  Katsuya Okumura ,  Akira Iio ,  Masayuki Hattori

IPC分类号： H01L21302

CPC分类号： C09K3/1463 ,  C09G1/02 ,  C09K3/1436 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

摘要： The object of the present invention is to provide an aqueous dispersion that can give the required properties for a wide range of uses including electronic materials, magnetic materials, optical materials and polishing materials, and to provide an aqueous dispersion for chemical mechanical polishing (CMP slurry) that gives an adequate polishing rate without creating scratches in polishing surfaces. Another object of the present invention is, to provide a method for manufacture of semiconductor devices using a CMP slurry that can control progressive erosion due to scratches and the like during polishing and that can achieve efficient flattening of working films, and to provide a method for formation of embedded wiring. The aqueous dispersion or CMP slurry of the present invention contains polymer particles made of thermoplastic resins or the like, and inorganic particles made of alumina, silica or the like, wherein the zeta potentials of the polymer particles and inorganic particles are of opposite signs, and they are bonded by electrostatic force to form aggregates as composite particles. The aggregates are subjected to ultrasonic wave irradiation or shear stress with a homogenizer to give more uniformly dispersed composite particles.

摘要翻译： 本发明的目的是提供一种水性分散体，其可以为包括电子材料，磁性材料，光学材料和抛光材料在内的广泛用途提供所需的性能，并提供用于化学机械抛光的水性分散体（CMP浆料 ），其提供足够的抛光速率，而不会在抛光表面中产生划痕。 本发明的另一个目的是提供一种使用CMP浆料制造半导体器件的方法，所述CMP浆料可以在抛光期间控制由划痕等引起的逐渐侵蚀，并且可以实现工作膜的有效平坦化，并提供一种方法 形成嵌入式布线。 本发明的水性分散体或CMP浆料含有由热塑性树脂等构成的聚合物颗粒和由氧化铝，二氧化硅等制成的无机颗粒，其中聚合物颗粒和无机颗粒的ζ电位具有相反的标志， 它们通过静电力结合以形成作为复合颗粒的聚集体。 聚集体用均化器进行超声波照射或剪切应力，得到更均匀分散的复合颗粒。

公开(公告)号：US06722964B2

公开(公告)日：2004-04-20

申请号：US09824644

申请日：2001-04-04

申请人： Norio Kimura ,  Mitsuhiko Shirakashi ,  Katsuya Okumura ,  You Ishii ,  Junji Kunisawa ,  Hiroyuki Yano

发明人： Norio Kimura ,  Mitsuhiko Shirakashi ,  Katsuya Okumura ,  You Ishii ,  Junji Kunisawa ,  Hiroyuki Yano

IPC分类号： B24B100

CPC分类号： B24B37/345 ,  B24B9/065 ,  B24B37/12 ,  H01L21/67046

摘要： A polishing apparatus and method has a function of polishing a surface of a film formed on a substrate to a flat mirror finish and a function of polishing unnecessary metal film such as copper film deposited on an outer peripheral portion of the substrate to remove such unnecessary metal film. The polishing apparatus comprises a surface polishing mechanism comprising a polishing table having a polishing surface and a top ring for holding the substrate and pressing the substrate against the polishing surface of the polishing table to thereby polish a surface of the substrate, and an outer periphery polishing mechanism for polishing an outer peripheral portion of the substrate.

摘要翻译： 抛光装置和方法具有将形成在基板上的膜的表面抛光至平面镜面的功能，以及抛光沉积在基板的外周部分上的不需要的金属膜如铜膜的功能，以去除这种不必要的金属 电影。 抛光装置包括表面抛光机构，其包括具有抛光表面的抛光台和用于保持基板的顶环，并将基板压靠在抛光台的抛光表面上，从而抛光基板的表面，以及外周抛光 用于抛光衬底的外周部分的机构。

公开(公告)号：US06646268B2

公开(公告)日：2003-11-11

申请号：US10083564

申请日：2002-02-27

申请人： Atsushi Murakoshi ,  Kyoichi Suguro ,  Katsuya Okumura

发明人： Atsushi Murakoshi ,  Kyoichi Suguro ,  Katsuya Okumura

IPC分类号： H01J3700

CPC分类号： H01J27/08 ,  H01J27/02 ,  H01J2237/08 ,  H01J2237/31701

摘要： According to the ion generation method, ion source material composed of an element of desired ions to be generated and I is heated so that vapor of the compound is generated, and the ions are generated by discharging the vapor. The iodide has no corrosiveness, and can be stably ionized. Further, it hardly reacts with oxygen or water and is safe.

公开(公告)号：US06614033B2

公开(公告)日：2003-09-02

申请号：US10002296

申请日：2001-12-05

申请人： Kyoichi Suguro ,  Atsushi Murakoshi ,  Katsuya Okumura

发明人： Kyoichi Suguro ,  Atsushi Murakoshi ,  Katsuya Okumura

IPC分类号： H01J37317

CPC分类号： H01J37/3171 ,  H01J2237/31711

摘要： An electrically conductive mask having openings formed is located above a semiconductor substrate and ions are implanted into the surface of the semiconductor substrate through the electrically conductive mask, thereby forming ion implanted layers. For ion implantation under different conditions, a dedicated electrically conductive mask is used with each ion implantation step.

公开(公告)号：US06538323B1

公开(公告)日：2003-03-25

申请号：US09449941

申请日：1999-11-29

申请人： Atsuko Sakata ,  Keiichi Sasaki ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Hirotaka Nishino

发明人： Atsuko Sakata ,  Keiichi Sasaki ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Hirotaka Nishino

IPC分类号： H01L2348

CPC分类号： H01L24/03 ,  H01L23/481 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/742 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/11001 ,  H01L2224/1131 ,  H01L2224/11334 ,  H01L2224/1147 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2924/00011 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/81805

摘要： After a barrier film is formed on a pad electrode, Ni particles having a diameter of 2 &mgr;m or less are selectively deposited on the barrier film, thereby forming a Ni fine particle film. Then, a bump electrode made of a solder ball is provided on the pad electrode through the Ni fine particle film. Thereafter, the bump electrode is melted by a heat treatment to join the Ni fine particle film to the bump electrode. Thus, a bump electrode structure is finished.

摘要翻译： 在焊盘电极上形成阻挡膜之后，在阻挡膜上选择性地沉积直径为2μm以下的Ni粒子，形成Ni微粒膜。 然后，通过Ni微粒膜在焊盘电极上设置由焊料球形成的突起电极。 此后，通过热处理使凸块电极熔融，将Ni微粒膜与凸点电极接合。 因此，凸块电极结构完成。