公开(公告)号：US07470939B2

公开(公告)日：2008-12-30

申请号：US11484701

申请日：2006-07-12

申请人： Akira Mochida ,  Kuniaki Mamitsu ,  Kenichi Oohama

发明人： Akira Mochida ,  Kuniaki Mamitsu ,  Kenichi Oohama

IPC分类号： H01L31/11

CPC分类号： H01L25/105 ,  H01L2224/32245 ,  H01L2225/1029 ,  H01L2225/1094 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/3511 ,  H01L2924/00

摘要： A semiconductor device is disclosed that includes a first and a second semiconductor package. Each semiconductor package includes a semiconductor element, a plurality of electrode members, and an encapsulating member. The semiconductor elements are interposed between the respective electrode members, and the electrode members are in electrical communication with and provide heat transfer for the respective semiconductor element. The encapsulating member encapsulates the respective semiconductor element between the respective electrode members, and an outer surface of each of the electrode members is exposed from the respective encapsulating member. Each semiconductor package includes a connecting terminal electrically coupled to one of the electrode members and extending outward so as to be exposed from the respective encapsulating member. The connecting terminals are electrically connected by abutment or via a conductive junction material.

摘要翻译： 公开了一种包括第一和第二半导体封装的半导体器件。 每个半导体封装包括半导体元件，多个电极构件和封装构件。 半导体元件插入在各个电极部件之间，并且电极部件与各个半导体元件电连通并提供热传递。 封装构件将相应的半导体元件封装在各个电极构件之间，并且每个电极构件的外表面从相应的封装构件露出。 每个半导体封装包括电耦合到电极构件之一并向外延伸以便从相应的封装构件露出的连接端子。 连接端子通过邻接或通过导电接合材料电连接。

公开(公告)号：US20070018197A1

公开(公告)日：2007-01-25

申请号：US11484701

申请日：2006-07-12

申请人： Akira Mochida ,  Kuniaki Mamitsu ,  Kenichi Oohama

发明人： Akira Mochida ,  Kuniaki Mamitsu ,  Kenichi Oohama

IPC分类号： H01L31/111

CPC分类号： H01L25/105 ,  H01L2224/32245 ,  H01L2225/1029 ,  H01L2225/1094 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/3511 ,  H01L2924/00

摘要： A semiconductor device is disclosed that includes a first and a second semiconductor package. Each semiconductor package includes a semiconductor element, a plurality of electrode members, and an encapsulating member. The semiconductor elements are interposed between the respective electrode members, and the electrode members are in electrical communication with and provide heat transfer for the respective semiconductor element. The encapsulating member encapsulates the respective semiconductor element between the respective electrode members, and an outer surface of each of the electrode members is exposed from the respective encapsulating member. Each semiconductor package includes a connecting terminal electrically coupled to one of the electrode members and extending outward so as to be exposed from the respective encapsulating member. The connecting terminals are electrically connected by abutment or via a conductive junction material.

摘要翻译： 公开了一种包括第一和第二半导体封装的半导体器件。 每个半导体封装包括半导体元件，多个电极构件和封装构件。 半导体元件插入在各个电极部件之间，并且电极部件与各个半导体元件电连通并提供热传递。 封装构件将相应的半导体元件封装在各个电极构件之间，并且每个电极构件的外表面从相应的封装构件露出。 每个半导体封装包括电耦合到电极构件之一并向外延伸以便从相应的封装构件露出的连接端子。 连接端子通过邻接或通过导电接合材料电连接。

公开(公告)号：US10079226B2

公开(公告)日：2018-09-18

申请号：US13357690

申请日：2012-01-25

申请人： Kuniaki Mamitsu ,  Takanori Teshima

发明人： Kuniaki Mamitsu ,  Takanori Teshima

IPC分类号： H01L23/36 ,  H01L25/11 ,  H01L23/473 ,  H05K7/20 ,  H01L23/40

CPC分类号： H01L25/117 ,  H01L23/40 ,  H01L23/4012 ,  H01L23/473 ,  H01L25/115 ,  H01L2224/40137 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/09701 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/30107 ,  H05K7/20927 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device comprises at least a semiconductor module including a semiconductor chip, a heat sink thermally connected to the semiconductor chip and a seal member for covering and sealing the semiconductor chip and the heat sink in such a manner as to expose the heat radiation surface of the heat sink. The radiation surface is cooled by a refrigerant. An opening is formed in a part of the seal member as a refrigerant path through which the refrigerant flows.

公开(公告)号：US07235876B2

公开(公告)日：2007-06-26

申请号：US11516501

申请日：2006-09-07

申请人： Tomomi Okumura ,  Yoshitsugu Sakamoto ,  Naohiko Hirano ,  Kuniaki Mamitsu

发明人： Tomomi Okumura ,  Yoshitsugu Sakamoto ,  Naohiko Hirano ,  Kuniaki Mamitsu

IPC分类号： H01L23/10 ,  H01L23/34

CPC分类号： H01L23/051 ,  H01L23/492 ,  H01L23/49503 ,  H01L23/49513 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L2224/26175 ,  H01L2224/27013 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32014 ,  H01L2224/32057 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/83385 ,  H01L2224/83455 ,  H01L2224/83801 ,  H01L2224/92147 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/0132 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes: first and second metallic plates, each of which includes a heat radiation surface and an inner surface; a semiconductor element between the metallic plates; a block between the second metallic plate and the semiconductor element; a solder member between the second metallic plate and the block; and a resin mold. The heat radiation surface is exposed from the resin mold. The second metallic plate includes a groove for preventing the solder member from expanding outside of the block. The groove is disposed on the inner surface and disposed on an outer periphery of the block. The second metallic plate further includes an inner surface member on an inner surface of the groove. The inner surface member has a solder wettability, which is larger than a solder wettability of the block.

公开(公告)号：US20050167802A1

公开(公告)日：2005-08-04

申请号：US11019242

申请日：2004-12-23

申请人： Naohiko Hirano ,  Kuniaki Mamitsu

发明人： Naohiko Hirano ,  Kuniaki Mamitsu

IPC分类号： H01L23/40 ,  H01L21/28 ,  H01L21/44 ,  H01L21/50 ,  H01L21/60 ,  H01L23/02 ,  H01L23/34 ,  H01L23/433 ,  H01L23/488 ,  H01L23/492 ,  H01L25/07

CPC分类号： H01L24/33 ,  H01L23/4334 ,  H01L23/488 ,  H01L24/32 ,  H01L25/072 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/32258 ,  H01L2224/33181 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes first and second semiconductor elements, a first metal body attached to a first side of the semiconductor elements by a first solder portion, a second metal body attached to a second side of the semiconductor elements with a second solder portion, and a resin mold sealing the semiconductor elements, the first metal body and the second metal body by encapsulating them. In the semiconductor device having the second side as an element disposition surface, strain measurement caused by heat stress is maximum at the first solder portion among soldering portions of the semiconductor elements.

摘要翻译： 半导体器件包括第一和第二半导体元件，通过第一焊料部分附着到半导体元件的第一侧的第一金属体，用第二焊料部分附着到半导体元件的第二侧的第二金属体，以及 树脂模具通过封装半导体元件，第一金属体和第二金属体来密封。 在具有作为元件配置面的第二面的半导体器件中，在半导体元件的焊接部中的第一焊料部处，由热应力引起的应变测量最大。

公开(公告)号：US06798062B2

公开(公告)日：2004-09-28

申请号：US10699838

申请日：2003-11-04

申请人： Kuniaki Mamitsu ,  Yasuyoshi Hirai

发明人： Kuniaki Mamitsu ,  Yasuyoshi Hirai

IPC分类号： H01L2334

CPC分类号： H01L24/33 ,  H01L23/051 ,  H01L23/4006 ,  H01L23/4334 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/05599 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/29116 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/29386 ,  H01L2224/32245 ,  H01L2224/33 ,  H01L2224/37147 ,  H01L2224/40137 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/85399 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01094 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/07811 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2924/05442 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes two semiconductor chips that are interposed between a pair of radiation members, and thermally and electrically connected to the radiation members. One of the radiation members has two protruding portions and front ends of the protruding portions are connected to principal electrodes of the semiconductor chips. The radiation members are made of a metallic material containing Cu or Al as a main component. The semiconductor chips and the radiation members are sealed with resin with externally exposed radiation surfaces.

公开(公告)号：US08441122B2

公开(公告)日：2013-05-14

申请号：US12805733

申请日：2010-08-17

申请人： Daisuke Fukuoka ,  Takanori Teshima ,  Kuniaki Mamitsu ,  Ken Sakamoto ,  Tetsuo Fujii ,  Akira Tai ,  Kazuo Akamatsu ,  Masayoshi Nishihata

发明人： Daisuke Fukuoka ,  Takanori Teshima ,  Kuniaki Mamitsu ,  Ken Sakamoto ,  Tetsuo Fujii ,  Akira Tai ,  Kazuo Akamatsu ,  Masayoshi Nishihata

IPC分类号： H01L23/34

CPC分类号： H01L23/3192 ,  H01L23/4334 ,  H01L23/492 ,  H01L24/01 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/05644 ,  H01L2224/16 ,  H01L2224/48491 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13055 ,  H01L2924/3512 ,  H01L2924/00

摘要： A semiconductor device includes a first protection film for covering a first metal wiring. A second protection film is disposed on the first protection film, which is covered with a solder layer. Even if a crack is generated in the second protection film before the solder layer is formed on the second protection film, the crack is restricted from proceeding into the first protection film.

摘要翻译： 半导体器件包括用于覆盖第一金属布线的第一保护膜。 第一保护膜设置在第一保护膜上，该第一保护膜被焊料层覆盖。 即使在第二保护膜上形成焊料层之前，在第二保护膜中产生裂纹，限制裂纹进入第一保护膜。

公开(公告)号：US20070236891A1

公开(公告)日：2007-10-11

申请号：US11730360

申请日：2007-03-30

申请人： Kuniaki Mamitsu

发明人： Kuniaki Mamitsu

IPC分类号： H05K7/20

CPC分类号： H01L23/4334 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L25/18 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A manufacturing method of a semiconductor device having a semiconductor chip, first and second heat radiation members, and a connection terminal includes: preparing a lead frame having first and second suspended terminals and the connection terminal; bending the suspended terminals; mounting the chip on the first member, press-contacting the first terminal to the first member, and bonding the chip with the connection terminal to the first member; and preparing an assembling jig having a base and a cover, mounting the first member on the base, arranging the second member on the second terminal, pressing the second member with the cover toward the base to parallelize heat radiation surfaces, and bonding the chip and the second member. A distance between the first member and the second terminal is larger than a distance between the first member and the chip.

摘要翻译： 具有半导体芯片，第一和第二散热构件和连接端子的半导体器件的制造方法包括：制备具有第一和第二悬置端子的引线框架和连接端子; 弯曲悬挂端子; 将所述芯片安装在所述第一构件上，将所述第一端子压接到所述第一构件，以及将所述芯片与所述连接端子接合到所述第一构件; 并准备具有底座和盖子的组装夹具，将第一构件安装在基座上，将第二构件布置在第二端子上，将第二构件与盖朝向底座挤压以平行散热表面，并且将芯片和 第二名成员。 第一构件和第二端子之间的距离大于第一构件和芯片之间的距离。

公开(公告)号：US07239016B2

公开(公告)日：2007-07-03

申请号：US10895947

申请日：2004-07-22

申请人： Naohiko Hirano ,  Nobuyuki Kato ,  Kuniaki Mamitsu ,  Yoshimi Nakase

发明人： Naohiko Hirano ,  Nobuyuki Kato ,  Kuniaki Mamitsu ,  Yoshimi Nakase

IPC分类号： H01L23/34

CPC分类号： H01L23/492 ,  H01L23/4334 ,  H01L23/562 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19043 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01051 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/29199

摘要： A semiconductor device includes a heat generation element; a bonding member; first and second heat radiation plates disposed on first and second sides of the heat generation element through the bonding member; a heat radiation block disposed between the first heat radiation plate and the heat generation element through the bonding member; and a resin mold. The heat radiation block has a thickness in a range between 0.5 mm and 1.5 mm. The semiconductor device has high reliability of the bonding member.

摘要翻译： 半导体器件包括发热元件; 接合部件; 第一和第二散热板，其通过接合构件设置在发热体的第一和第二侧上; 散热块，其通过所述接合构件设置在所述第一散热板和所述发热体之间; 和树脂模具。 散热块的厚度在0.5mm至1.5mm的范围内。 半导体器件具有高粘合部件的可靠性。

公开(公告)号：US20060087043A1

公开(公告)日：2006-04-27

申请号：US11248263

申请日：2005-10-13

申请人： Naoki Hirasawa ,  Sadahisa Onimaru ,  Hirohito Matsui ,  Kuniaki Mamitsu ,  Naohiko Hirano

发明人： Naoki Hirasawa ,  Sadahisa Onimaru ,  Hirohito Matsui ,  Kuniaki Mamitsu ,  Naohiko Hirano

IPC分类号： H01L23/48

CPC分类号： H01L24/83 ,  H01L23/3735 ,  H01L24/33 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/8385 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01043 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01065 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor device includes: a base member; a solder layer; and a semiconductor chip disposed on the base member through the solder layer. The chip has an in-plane temperature distribution when the chip is operated. The chip has an allowable maximum temperature as a temperature limit of operation. The in-plane temperature distribution of the chip provides a temperature of the chip at each position of a surface of the chip. The temperature margin at each position is obtained by subtracting the temperature of the chip from the allowable maximum temperature. The solder layer has an allowable maximum diameter of a void at each position, the void being disposed in the solder layer. The allowable maximum diameter of the void at each position becomes larger as the temperature margin at the position becomes larger.

摘要翻译： 一种半导体器件，包括：基底部件; 焊料层; 以及通过焊料层设置在基底构件上的半导体芯片。 当芯片工作时，芯片具有平面内的温度分布。 该芯片具有允许的最高温度作为操作的温度限制。 芯片的平面内温度分布提供芯片表面的每个位置处的芯片的温度。 通过从允许的最高温度减去芯片的温度来获得每个位置的温度裕度。 焊料层在每个位置具有允许的最大直径，空隙设置在焊料层中。 当位置处的温度裕度变大时，每个位置处的空隙的允许最大直径变大。