公开(公告)号：US08710657B2

公开(公告)日：2014-04-29

申请号：US13242864

申请日：2011-09-23

Applicant: Jeong-woo Park ,  Moon-gi Cho ,  Ui-hyoung Lee ,  Sun-hee Park

Inventor： Jeong-woo Park ,  Moon-gi Cho ,  Ui-hyoung Lee ,  Sun-hee Park

IPC: H01L21/44

CPC classification number: H01L23/49833 ,  H01L23/3128 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/06155 ,  H01L2224/06156 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/13005 ,  H01L2224/13012 ,  H01L2224/13016 ,  H01L2224/13082 ,  H01L2224/13109 ,  H01L2224/13118 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/13171 ,  H01L2224/13193 ,  H01L2224/14051 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/17517 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01052 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: Semiconductor packages connecting a semiconductor chip to an external device by bumps are provided. The semiconductor packages may include a connection pad on a semiconductor chip, a connecting bump on and configured to be electrically connected to the connection pad and a supporting bump on the semiconductor chip and configured to be electrically isolated from the connection pad. The connection bump may include a first pillar and a first solder ball and the supporting bump may include a second pillar and a second solder ball. The semiconductor packages may further include a solder channel in the second pillar configured to allow a portion of the second solder ball to extend into the solder channel along a predetermined direction.

Abstract translation: 提供了通过凸块将半导体芯片连接到外部设备的半导体封装。 半导体封装可以包括半导体芯片上的连接焊盘，连接焊盘，并且构造成电连接到连接焊盘，并且在半导体芯片上具有支撑突起，并且被配置为与连接焊盘电隔离。 连接凸起可以包括第一柱和第一焊球，并且支撑凸起可以包括第二柱和第二焊球。 半导体封装还可以包括在第二柱中的焊料通道，其被配置为允许第二焊球的一部分沿着预定方向延伸到焊料通道中。

公开(公告)号：US20130009286A1

公开(公告)日：2013-01-10

申请号：US13471735

申请日：2012-05-15

Applicant: Young-lyong Kim ,  Jong-ho Lee ,  Moon-gi Cho ,  Hwan-sik Lim ,  Sun-hee Park

Inventor： Young-lyong Kim ,  Jong-ho Lee ,  Moon-gi Cho ,  Hwan-sik Lim ,  Sun-hee Park

IPC: H01L23/58

CPC classification number: H01L24/11 ,  H01L23/3128 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L2224/02123 ,  H01L2224/0331 ,  H01L2224/0332 ,  H01L2224/0345 ,  H01L2224/03464 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05016 ,  H01L2224/05017 ,  H01L2224/05018 ,  H01L2224/05019 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05025 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05166 ,  H01L2224/0519 ,  H01L2224/05191 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/0556 ,  H01L2224/05562 ,  H01L2224/05568 ,  H01L2224/05666 ,  H01L2224/0569 ,  H01L2224/05691 ,  H01L2224/1131 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/11912 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/1319 ,  H01L2224/13191 ,  H01L2224/14131 ,  H01L2224/1416 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/1435 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A semiconductor chip includes stress-relief to mitigate the effects of differences in coefficients of thermal expansion (CTE) between a printed circuit board (PCB) and a semiconductor chip and a flip-chip package including the semiconductor chip. The semiconductor chip includes a stress-relief buffer coupling a bump and a semiconductor chip pad.

Abstract translation: 半导体芯片包括减轻压力以减轻印刷电路板（PCB）和半导体芯片之间的热膨胀系数（CTE）的差异以及包括半导体芯片的倒装芯片封装的影响。 半导体芯片包括耦合凸块的应力消除缓冲器和半导体芯片焊盘。

公开(公告)号：US06735588B2

公开(公告)日：2004-05-11

申请号：US09853649

申请日：2001-05-14

Applicant: Bo-Sung Kim ,  Jun-dong Cho ,  Young-hoon Chang ,  Sun-hee Park

Inventor： Bo-Sung Kim ,  Jun-dong Cho ,  Young-hoon Chang ,  Sun-hee Park

IPC: G06F1730

CPC classification number: G06K9/6297 ,  G10L15/142 ,  G10L15/144 ,  Y10S707/99935

Abstract: An information search method and apparatus employ an Inverse Hidden Markov Model (IHMM) for stochastically searching for a reference information model among a plurality of predetermined reference information models obtained by training that best matches unknown information which is expressed by a Hidden Markov Model (HMM) chain. The method and apparatus find an optimal path in a HMM state lattice using a minimum unlikelihood score, rather than a maximum likelihood score, and using a Viterbi algorithm, to recognize unknown information, so that unnecessary computations are avoided. The method and apparatus can be used for finding the most likely path through a vocabulary network for a given utterance.

Abstract translation: 信息搜索方法和装置采用逆隐马尔可夫模型（IHMM）来随机搜索通过训练获得的多个预定参考信息模型中的参考信息模型，所述参考信息模型与由隐马尔可夫模型（HMM）表示的未知信息最佳匹配， 链。 该方法和装置使用最小不可能得分而不是最大似然分数在HMM状态网格中找到最佳路径，并使用维特比算法来识别未知信息，从而避免不必要的计算。 该方法和装置可以用于通过用于给定话语的词汇网络找到最可能的路径。

公开(公告)号：US20080186321A1

公开(公告)日：2008-08-07

申请号：US12023916

申请日：2008-01-31

Applicant: Sun-hee Park ,  Shin-Chan Kang

Inventor： Sun-hee Park ,  Shin-Chan Kang

IPC: G06F12/06

CPC classification number: G06T1/20

Abstract: A system on chip (Soc) includes a system bus, a plurality of sub-systems, an image processing logic block, an image memory interface and an image processing memory block. The sub-systems are respectively connected to the system bus. The image processing logic block is connected to the system bus. The image processing logic block performs an image processing. The image processing logic block is included in a first power domain. The image memory interface is connected to the system bus and the image processing logic block. The image processing memory block is connected to the image memory interface. The image processing memory block is used for the image processing. The image memory interface and the image processing memory block are included in a second power domain different from the first power domain.

Abstract translation: 片上系统（Soc）包括系统总线，多个子系统，图像处理逻辑块，图像存储器接口和图像处理存储器块。 子系统分别连接到系统总线。 图像处理逻辑块被连接到系统总线。 图像处理逻辑块执行图像处理。 图像处理逻辑块被包括在第一电源域中。 图像存储器接口连接到系统总线和图像处理逻辑块。 图像处理存储器块连接到图像存储器接口。 图像处理存储块用于图像处理。 图像存储器接口和图像处理存储器块包括在与第一功率域不同的第二功率域中。

公开(公告)号：US06989664B2

公开(公告)日：2006-01-24

申请号：US10408779

申请日：2003-04-08

Applicant: Dong-ha Shim ,  In-sang Song ,  Young-il Kim ,  Sun-hee Park ,  Young-tack Hong ,  Dong-ki Min

Inventor： Dong-ha Shim ,  In-sang Song ,  Young-il Kim ,  Sun-hee Park ,  Young-tack Hong ,  Dong-ki Min

IPC: G01R31/00 ,  G01R29/24 ,  G01R27/26

CPC classification number: G01R21/00 ,  G01R1/06772

Abstract: An RF power sensor for measuring power for an RF signal using capacitance includes a substrate preferably formed of a semiconductor, such as silicon or of a dielectric substance, a fixture part fixed to the substrate and forming a signal line and ground lines that transmit RF signals, and a bridge connected to the ground lines and floating over the signal line, wherein the bridge is driven by an external driving force, and the external driving force induces capacitance between the bridge and the signal line. Accordingly, power for an RF signal can be measured through the capacitance between the signal line and the bridge. The RF power sensor facilitates matchings, reduces insertion loss, and can be used in a wide bandwidth because it is based on transmission lines having characteristic impedance. Further, high power can be measured depending upon bridge designs.

公开(公告)号：US07380045B2

公开(公告)日：2008-05-27

申请号：US11062951

申请日：2005-02-23

Applicant: Sun-hee Park ,  Hyun-woo Park ,  Keun-cheol Hong

Inventor： Sun-hee Park ,  Hyun-woo Park ,  Keun-cheol Hong

IPC: G06F13/00

CPC classification number: G06F13/1694 ,  G06F13/1605 ,  G06F13/1684

Abstract: A protocol conversion and arbitration circuit may include: a protocol conversion circuit to receive signals complying with a second protocol used by a master, and to convert the received signals into signals complying with an intermediary protocol used by an internal bus of a slave; and a transform circuit to receive, from the protocol conversion circuit, and to convert the once-converted signals into signals complying with a first protocol used by the slave.

Abstract translation: 协议转换和仲裁电路可以包括：协议转换电路，用于接收符合由主机使用的第二协议的信号，并将所接收的信号转换为符合由从机的内部总线使用的中间协议的信号; 以及变换电路，用于从协议转换电路接收并将一次转换的信号转换成符合由从机使用的第一协议的信号。

公开(公告)号：US20050188144A1

公开(公告)日：2005-08-25

申请号：US11062951

申请日：2005-02-23

Applicant: Sun-hee Park ,  Hyun-woo Park ,  Keun-cheol Hong

Inventor： Sun-hee Park ,  Hyun-woo Park ,  Keun-cheol Hong

IPC: H04L29/06 ,  G06F12/00 ,  G06F13/00 ,  G06F13/16 ,  G06F13/20 ,  G06F13/38 ,  G06F13/42

CPC classification number: G06F13/1694 ,  G06F13/1605 ,  G06F13/1684

Abstract: A protocol conversion and arbitration circuit may include: a protocol conversion circuit to receive signals complying with a second protocol used by a master, and to convert the received signals into signals complying with an intermediary protocol used by an internal bus of a slave; and a transform circuit to receive, from the protocol conversion circuit, and to convert the once-converted signals into signals complying with a first protocol used by the slave.

Abstract translation: 协议转换和仲裁电路可以包括：协议转换电路，用于接收符合由主机使用的第二协议的信号，并将所接收的信号转换为符合由从机的内部总线使用的中间协议的信号; 以及变换电路，用于从协议转换电路接收并将一次转换的信号转换成符合由从机使用的第一协议的信号。

公开(公告)号：US07122942B2

公开(公告)日：2006-10-17

申请号：US10951612

申请日：2004-09-29

Applicant: In-sang Song ,  Young-il Kim ,  Moon-chul Lee ,  Dong-ha Shim ,  Young-tack Hong ,  Sun-hee Park ,  Kuang-woo Nam

Inventor： In-sang Song ,  Young-il Kim ,  Moon-chul Lee ,  Dong-ha Shim ,  Young-tack Hong ,  Sun-hee Park ,  Kuang-woo Nam

IPC: H01L41/08

CPC classification number: H01P1/127 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006

Abstract: A micro switch having a dielectric layer having a movement region formed on a substrate, a conductive layer formed on a predetermined portion of the movement region, a dielectric film formed on the conductive layer, first and second electric conductors formed a predetermined distance above the dielectric film, one or two lower electrodes formed on the movement region, and one or two upper electrodes formed a predetermined distance above the two lower electrodes, the one or two upper electrodes moving the conductive layer and the dielectric film upwards when an electrostatic force occurs between the upper and lower electrodes, and capacitively coupled with the first and second electric conductors to allow a current to flow between the first and second electric conductors. Such a micro switch has a high on/off ratio and isolation degree and a simple structure, and can be fabricated in a very easy process.

Abstract translation: 一种具有介电层的微型开关，具有形成在基板上的移动区域，形成在所述移动区域的预定部分上的导电层，形成在所述导电层上的电介质膜，在所述电介质上形成预定距离的第一和第二导电体 膜，形成在移动区域上的一个或两个下电极，以及在两个下电极之上形成预定距离的一个或两个上电极，一个或两个上电极在静电力发生时向上移动导电层和电介质膜 上电极和下电极，并且与第一和第二电导体电容耦合以允许电流在第一和第二电导体之间流动。 这种微型开关具有高的开/关比和隔离度和简单的结构，并且可以在非常容易的过程中制造。

公开(公告)号：US20050040486A1

公开(公告)日：2005-02-24

申请号：US10951612

申请日：2004-09-29

Applicant: In-sang Song ,  Young-il Kim ,  Moon-chul Lee ,  Dong-ha Shim ,  Young-tack Hong ,  Sun-hee Park ,  Kuang-woo Nam

Inventor： In-sang Song ,  Young-il Kim ,  Moon-chul Lee ,  Dong-ha Shim ,  Young-tack Hong ,  Sun-hee Park ,  Kuang-woo Nam

IPC: B81B3/00 ,  H01H57/00 ,  H01H59/00 ,  H01L29/417 ,  H01L41/09 ,  H01P1/12 ,  H01L21/76

CPC classification number: H01P1/127 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006

Abstract: A micro switch having a dielectric layer having a movement region formed on a substrate, a conductive layer formed on a predetermined portion of the movement region, a dielectric film formed on the conductive layer, first and second electric conductors formed a predetermined distance above the dielectric film, one or two lower electrodes formed on the movement region, and one or two upper electrodes formed a predetermined distance above the two lower electrodes, the one or two upper electrodes moving the conductive layer and the dielectric film upwards when an electrostatic force occurs between the upper and lower electrodes, and capacitively coupled with the first and second electric conductors to allow a current to flow between the first and second electric conductors. Such a micro switch has a high on/off ratio and isolation degree and a simple structure, and can be fabricated in a very easy process.

Abstract translation: 一种具有介电层的微型开关，具有形成在基板上的移动区域，形成在所述移动区域的预定部分上的导电层，形成在所述导电层上的电介质膜，在所述电介质上形成预定距离的第一和第二导电体 膜，形成在移动区域上的一个或两个下电极，以及在两个下电极之上形成预定距离的一个或两个上电极，一个或两个上电极在静电力发生时向上移动导电层和电介质膜 上电极和下电极，并且与第一和第二电导体电容耦合以允许电流在第一和第二电导体之间流动。 这种微型开关具有高的开/关比和隔离度和简单的结构，并且可以在非常容易的过程中制造。