公开(公告)号：US20130292830A1

公开(公告)日：2013-11-07

申请号：US13463474

申请日：2012-05-03

申请人： Shih-Wei Liang ,  Kai-Chiang Wu ,  Ming-Kai Liu ,  Chia-Chun Miao ,  Chun-Lin Lu

发明人： Shih-Wei Liang ,  Kai-Chiang Wu ,  Ming-Kai Liu ,  Chia-Chun Miao ,  Chun-Lin Lu

IPC分类号： H01L23/485 ,  H05K1/11 ,  G06F17/50

CPC分类号： H01L23/485 ,  G06F17/5068 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L2224/16225 ,  H01L2924/15311 ,  H05K1/0271 ,  H05K1/115 ,  H05K2201/068 ,  H05K2201/09781 ,  H05K2201/10378

摘要： A structure includes a substrate having a plurality of balls, a semiconductor chip, and an interposer electrically connecting the substrate and the semiconductor chip. The interposer includes a first side, a second side opposite the first side, at least one first exclusion zone extending through the interposer above each ball of the plurality of balls, at least one active through via extending from the first side of the interposer to the second side of the interposer, wherein the at least one active through via is formed outside the at least one first exclusion zone and wherein no active through vias are formed within the at least one first exclusion zone, and at least one dummy through via extending from the first side of the interposer to the second side of the interposer, wherein the at least one dummy through via is formed within the at least one first exclusion zone.

摘要翻译： 一种结构包括具有多个球的衬底，半导体芯片和电连接衬底和半导体芯片的插入器。 所述插入器包括第一侧，与所述第一侧相对的第二侧，至少一个第一排除区域，所述至少一个第一排除区域延伸穿过所述多个球的每个球上方的所述插入器，至少一个主动通孔，其从所述插入件的第一侧延伸到 其中所述至少一个活性通孔形成在所述至少一个第一排除区域的外部，并且其中在所述至少一个第一排除区域内没有形成活性通孔，以及至少一个虚拟通孔， 所述插入器的第一侧到所述插入件的第二侧，其中所述至少一个虚拟通孔形成在所述至少一个第一排除区域内。

公开(公告)号：US08664768B2

公开(公告)日：2014-03-04

申请号：US13463474

申请日：2012-05-03

申请人： Shih-Wei Liang ,  Kai-Chiang Wu ,  Ming-Kai Liu ,  Chia-Chun Miao ,  Chun-Lin Lu

发明人： Shih-Wei Liang ,  Kai-Chiang Wu ,  Ming-Kai Liu ,  Chia-Chun Miao ,  Chun-Lin Lu

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/053 ,  H01L23/12

CPC分类号： H01L23/485 ,  G06F17/5068 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L2224/16225 ,  H01L2924/15311 ,  H05K1/0271 ,  H05K1/115 ,  H05K2201/068 ,  H05K2201/09781 ,  H05K2201/10378

摘要： A structure includes a substrate having a plurality of balls, a semiconductor chip, and an interposer electrically connecting the substrate and the semiconductor chip. The interposer includes a first side, a second side opposite the first side, at least one first exclusion zone extending through the interposer above each ball of the plurality of balls, at least one active through via extending from the first side of the interposer to the second side of the interposer, wherein the at least one active through via is formed outside the at least one first exclusion zone and wherein no active through vias are formed within the at least one first exclusion zone, and at least one dummy through via extending from the first side of the interposer to the second side of the interposer, wherein the at least one dummy through via is formed within the at least one first exclusion zone.

摘要翻译： 一种结构包括具有多个球的衬底，半导体芯片和电连接衬底和半导体芯片的插入器。 所述插入器包括第一侧，与所述第一侧相对的第二侧，至少一个第一排除区域，所述至少一个第一排除区域延伸穿过所述多个球的每个球上方的所述插入器，至少一个主动通孔，其从所述插入件的第一侧延伸到 其中所述至少一个活性通孔形成在所述至少一个第一排除区域的外部，并且其中在所述至少一个第一排除区域内没有形成活性通孔，以及至少一个虚拟通孔， 所述插入器的第一侧到所述插入件的第二侧，其中所述至少一个虚拟通孔形成在所述至少一个第一排除区域内。

公开(公告)号：US08901730B2

公开(公告)日：2014-12-02

申请号：US13463667

申请日：2012-05-03

申请人： Ming-Kai Liu ,  Shih-Wei Liang ,  Hsien-Wei Chen ,  Kai-Chiang Wu

发明人： Ming-Kai Liu ,  Shih-Wei Liang ,  Hsien-Wei Chen ,  Kai-Chiang Wu

IPC分类号： H01L23/48

CPC分类号： H01L24/17 ,  H01L21/50 ,  H01L23/488 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/52 ,  H01L24/13 ,  H01L24/15 ,  H01L24/16 ,  H01L24/73 ,  H01L24/81 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/13101 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/1703 ,  H01L2224/17519 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81986 ,  H01L2225/0651 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1082 ,  H01L2924/00011 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/81805

摘要： Package on package (PoP) devices and methods of packaging semiconductor dies are disclosed. A PoP device is formed by connecting a top package and a bottom package together using a plurality of PoP connectors on the bottom package connected to corresponding connectors of the top package. The PoP device further comprises a plurality of dummy connectors contained in the bottom package and not connected to any corresponding connector in the top package.

摘要翻译： 封装封装（PoP）器件和封装半导体管芯的方法被公开。 PoP设备通过使用顶部封装的相应连接器上的底部封装上的多个PoP连接器连接顶部封装和底部封装而形成。 PoP设备还包括多个虚拟连接器，其包含在底部封装中并且未连接到顶部封装中的任何相应的连接器。

公开(公告)号：US20130292831A1

公开(公告)日：2013-11-07

申请号：US13463667

申请日：2012-05-03

申请人： Ming-Kai Liu ,  Shih-Wei Liang ,  Hsien-Wei Chen ,  Kai-Chiang Wu

发明人： Ming-Kai Liu ,  Shih-Wei Liang ,  Hsien-Wei Chen ,  Kai-Chiang Wu

IPC分类号： H01L23/52 ,  H01L23/488 ,  H01L21/50

CPC分类号： H01L24/17 ,  H01L21/50 ,  H01L23/488 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/52 ,  H01L24/13 ,  H01L24/15 ,  H01L24/16 ,  H01L24/73 ,  H01L24/81 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/13101 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/1703 ,  H01L2224/17519 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81986 ,  H01L2225/0651 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1082 ,  H01L2924/00011 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/81805

摘要： Package on package (PoP) devices and methods of packaging semiconductor dies are disclosed. A PoP device is formed by connecting a top package and a bottom package together using a plurality of PoP connectors on the bottom package connected to corresponding connectors of the top package. The PoP device further comprises a plurality of dummy connectors contained in the bottom package and not connected to any corresponding connector in the top package.

公开(公告)号：US08749043B2

公开(公告)日：2014-06-10

申请号：US13409756

申请日：2012-03-01

申请人： Chen-Hua Yu ,  Mirng-Ji Lii ,  Hao-Yi Tsai ,  Hsien-Wei Chen ,  Kai-Chiang Wu

发明人： Chen-Hua Yu ,  Mirng-Ji Lii ,  Hao-Yi Tsai ,  Hsien-Wei Chen ,  Kai-Chiang Wu

IPC分类号： H01L23/02 ,  H01L21/16

CPC分类号： H01L24/14 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/3677 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/11 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/11011 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/00014 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/181 ,  H05K1/0206 ,  H05K1/0306 ,  H05K1/113 ,  H05K2201/068 ,  H01L2224/45099 ,  H01L2924/00012

摘要： A package on packaging structure comprising a first package and a second package provides for improved thermal conduction and mechanical strength by the introduction of a thermally conductive substrate attached to the second package. The first package has a first substrate and a first integrated circuit. The second package has a second substrate containing through vias that has a first coefficient of thermal expansion. The second package also has a second integrated circuit having a second coefficient of thermal expansion located on the second substrate. The second coefficient of thermal expansion deviates from the first coefficient of thermal expansion by less than about 10 or less than about 5 parts-per-million per degree Celsius. A first set of conductive elements couples the first substrate and the second substrate. A second set of conductive elements couples the second substrate and the second integrated circuit.

摘要翻译： 包装结构包括第一包装和第二包装通过引入连接到第二包装件上的导热基材提供改进的热传导和机械强度。 第一封装具有第一衬底和第一集成电路。 第二包装具有包含通孔的第二基板，其具有第一热膨胀系数。 第二封装还具有第二集成电路，其具有位于第二基板上的第二热膨胀系数。 第二热膨胀系数从第一热膨胀系数偏离每摄氏度小于约10或小于约5百万分之一。 第一组导电元件将第一基板和第二基板连接。 第二组导电元件将第二基板和第二集成电路耦合。

公开(公告)号：US20130270686A1

公开(公告)日：2013-10-17

申请号：US13444558

申请日：2012-04-11

申请人： Hsien-Wei Chen ,  Chung-Ying Yang ,  Chao-Wen Shih ,  Kai-Chiang Wu

发明人： Hsien-Wei Chen ,  Chung-Ying Yang ,  Chao-Wen Shih ,  Kai-Chiang Wu

IPC分类号： H01L23/34 ,  H01L21/60

CPC分类号： H01L23/367 ,  H01L2224/131 ,  H01L2224/16237 ,  H01L2224/81191 ,  H01L2224/81424 ,  H01L2924/014 ,  H01L2924/00014

摘要： Apparatus and methods for forming a heat spreader on a substrate to release heat for a semi-conductor package are disclosed. The apparatus comprises a substrate. A dielectric layer is formed next to the substrate and in contact with a surface of the substrate. A heat spreader is formed next to the substrate and in contact with another surface of the substrate. A passivation layer is formed next to the dielectric layer. A connection pad is placed on top of the passivation layer. The substrate may comprise additional through-silicon-vias. The contact surface between the substrate and the heat spreader may be a scraggy surface. The packaging method further proceeds to connect a chip to the connection pad by way of a connection device such as a solder ball or a bump.

摘要翻译： 公开了一种用于在基板上形成散热器以释放用于半导体封装的热量的装置和方法。 该装置包括基板。 在基板的旁边形成介电层，与基板的表面接触。 散热器形成在基板的旁边并与基板的另一个表面接触。 在电介质层的旁边形成钝化层。 连接焊盘放置在钝化层的顶部。 衬底可以包括另外的通硅通孔。 基板和散热器之间的接触表面可能是肮脏的表面。 包装方法还进一步通过诸如焊球或凸块的连接装置将芯片连接到连接焊盘。

公开(公告)号：US20130228932A1

公开(公告)日：2013-09-05

申请号：US13409756

申请日：2012-03-01

申请人： Chen-Hua Yu ,  Mirng-Ji Lii ,  Hao-Yi Tsai ,  Hsien-Wei Chen ,  Kai-Chiang Wu

发明人： Chen-Hua Yu ,  Mirng-Ji Lii ,  Hao-Yi Tsai ,  Hsien-Wei Chen ,  Kai-Chiang Wu

IPC分类号： H01L23/48 ,  H01L21/50

CPC分类号： H01L24/14 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/3677 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/11 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/11011 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/00014 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/181 ,  H05K1/0206 ,  H05K1/0306 ,  H05K1/113 ,  H05K2201/068 ,  H01L2224/45099 ,  H01L2924/00012

摘要： A package on packaging structure comprising a first package and a second package provides for improved thermal conduction and mechanical strength by the introduction of a thermally conductive substrate attached to the second package. The first package has a first substrate and a first integrated circuit. The second package has a second substrate containing through vias that has a first coefficient of thermal expansion. The second package also has a second integrated circuit having a second coefficient of thermal expansion located on the second substrate. The second coefficient of thermal expansion deviates from the first coefficient of thermal expansion by less than about 10 or less than about 5 parts-per-million per degree Celsius. A first set of conductive elements couples the first substrate and the second substrate. A second set of conductive elements couples the second substrate and the second integrated circuit.

公开(公告)号：US09236322B2

公开(公告)日：2016-01-12

申请号：US13444558

申请日：2012-04-11

申请人： Hsien-Wei Chen ,  Chung-Ying Yang ,  Chao-Wen Shih ,  Kai-Chiang Wu

发明人： Hsien-Wei Chen ,  Chung-Ying Yang ,  Chao-Wen Shih ,  Kai-Chiang Wu

IPC分类号： H01L23/34 ,  H01L23/367

CPC分类号： H01L23/367 ,  H01L2224/131 ,  H01L2224/16237 ,  H01L2224/81191 ,  H01L2224/81424 ,  H01L2924/014 ,  H01L2924/00014

摘要： Apparatus and methods for forming a heat spreader on a substrate to release heat for a semi-conductor package are disclosed. The apparatus comprises a substrate. A dielectric layer is formed next to the substrate and in contact with a surface of the substrate. A heat spreader is formed next to the substrate and in contact with another surface of the substrate. A passivation layer is formed next to the dielectric layer. A connection pad is placed on top of the passivation layer. The substrate may comprise additional through-silicon-vias. The contact surface between the substrate and the heat spreader may be a scraggy surface. The packaging method further proceeds to connect a chip to the connection pad by way of a connection device such as a solder ball or a bump.

摘要翻译： 公开了一种用于在基板上形成散热器以释放用于半导体封装的热量的装置和方法。 该装置包括基板。 在基板的旁边形成介电层，与基板的表面接触。 散热器形成在基板的旁边并与基板的另一个表面接触。 在电介质层的旁边形成钝化层。 连接焊盘放置在钝化层的顶部。 衬底可以包括另外的通硅通孔。 基板和散热器之间的接触表面可能是肮脏的表面。 包装方法还进一步通过诸如焊球或凸块的连接装置将芯片连接到连接焊盘。

公开(公告)号：US20130187277A1

公开(公告)日：2013-07-25

申请号：US13443556

申请日：2012-04-10

申请人： Yu-Feng Chen ,  Chun-Hung Lin ,  Han-Ping Pu ,  Chih-Hang Tung ,  Kai-Chiang Wu ,  Ming-Che Ho

发明人： Yu-Feng Chen ,  Chun-Hung Lin ,  Han-Ping Pu ,  Chih-Hang Tung ,  Kai-Chiang Wu ,  Ming-Che Ho

IPC分类号： H01L23/48

CPC分类号： H01L24/13 ,  H01L23/488 ,  H01L24/02 ,  H01L24/05 ,  H01L24/10 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05111 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05551 ,  H01L2224/05555 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05686 ,  H01L2224/10125 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13012 ,  H01L2224/13076 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/81191 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/12042 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01047 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor die includes a crack stopper on an under-bump metallization (UBM) layer. The crack stopper is in the shape of hollow cylinder with at least two openings.

摘要翻译： 半导体管芯包括在凸块下金属化（UBM）层上的裂纹阻挡层。 裂缝止动器为具有至少两个开口的中空圆筒形状。

公开(公告)号：US07095091B2

公开(公告)日：2006-08-22

申请号：US10880738

申请日：2004-07-01

申请人： Kai-Chiang Wu ,  Shaw-Wei Chen

发明人： Kai-Chiang Wu ,  Shaw-Wei Chen

IPC分类号： H01L31/06

CPC分类号： H01L24/49 ,  H01L23/49541 ,  H01L24/45 ,  H01L24/48 ,  H01L25/0657 ,  H01L2224/05554 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48227 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00

摘要： An improved finger structure applied to a packaging stack structure. The packaging stack structure is composed of several layers of chips, each chip is formed several leading wires and several finger sets are connected to the leading wire. Several finger units are formed on a finger set. The shape of these finger units is a strip structure with a bending angle, and the shape of these finger units is along an obverse direction of these leading wires to the finger unit and is changed corresponding to the obverse direction of the finger unit. The present invention can simplify the process and improve the reliability by changing the finger structure and continuously using the obverse bonding process to avoid the striking strength of the reverse bonding process.

摘要翻译： 改进的手指结构应用于包装堆叠结构。 包装堆叠结构由几层芯片组成，每个芯片形成几根引线，并且几根指套连接到引线。 手指组上形成有多个手指单元。 这些指形单元的形状是具有弯曲角度的带状结构，并且这些指状单元的形状沿着这些引导线到手指单元的正方向，并且相应于手指单元的正面方向而改变。 本发明可以通过改变手指结构并连续地使用正面粘接工艺来简化工艺并提高可靠性，以避免反向粘合过程的冲击强度。