Method and apparatus for transporting substrates in OLED process
    1.
    发明授权
    Method and apparatus for transporting substrates in OLED process 失效
    用于在OLED工艺中传输衬底的方法和装置

    公开(公告)号:US06658762B2

    公开(公告)日:2003-12-09

    申请号:US10124481

    申请日:2002-04-18

    IPC分类号: F26B504

    摘要: A method and an apparatus for transporting substrates in all organic light emitting diode (OLED) process is disclosed, which has a transferring chamber provided for transporting substrates between processing modules and the atmosphere condition therein is able to be adjusted to be the same as the processing module by an atmosphere conditioner unit. According to the present invention, the substrates are not contaminated by moisture and the process operation and the factory layout are more flexible. Moreover, the OLED yield is improved.

    摘要翻译: 公开了一种用于在所有有机发光二极管(OLED)工艺中传输衬底的方法和装置,其具有设置用于在处理模块之间传送衬底的传送室,并且其中的气氛条件能够被调整为与处理相同 模块由大气调节装置组成。 根据本发明,基板不被水分污染,并且工艺操作和工厂布局更灵活。 此外,OLED产率提高。

    Method and apparatus for transporting substrates in OLED process
    2.
    发明授权
    Method and apparatus for transporting substrates in OLED process 失效
    用于在OLED工艺中传输衬底的方法和装置

    公开(公告)号:US06393716B1

    公开(公告)日:2002-05-28

    申请号:US09563932

    申请日:2000-05-04

    IPC分类号: B65G4907

    摘要: A method and an apparatus for transporting substrates in an organic light emitting diode (OLED) process is disclosed, which has a transferring chamber provided for transporting substrates between processing modules and the atmosphere condition therein is able to be adjusted to be the same as the processing module by an atmosphere conditioner unit. According to the present invention, the substrates are not contaminated by moisture and the process operation and the factory layout are more flexible. Moreover, the OLED yield is improved.

    摘要翻译: 公开了一种用于在有机发光二极管(OLED)工艺中传输衬底的方法和装置,其具有设置用于在处理模块之间传送衬底的传送室,并且其中的气氛条件能够被调整为与处理相同 模块由大气调节装置组成。 根据本发明,基板不被水分污染,并且工艺操作和工厂布局更灵活。 此外,OLED产率提高。

    OBIRCH dual power circuit
    3.
    发明授权

    公开(公告)号:US06963214B2

    公开(公告)日:2005-11-08

    申请号:US10822524

    申请日:2004-04-12

    IPC分类号: G01R31/28 G01R31/26 G05F3/02

    CPC分类号: G01R31/2841

    摘要: Methods and apparatus for testing a semiconductor structure requiring a precise core or operating voltage with an OBIRCH analysis arrangement. The separate power supply used for providing the precise core or operating voltage is eliminated, and is replaced by connecting a circuit comprised of a plurality of Schottky diodes connected in series across the constant voltage power supply used to provide the current for the OBIRCH analysis. A precise voltage is then tapped from an anode of the series connected Schottky diodes thereby significantly reducing effects of background noise on the OBIRCH analysis.

    Electronic device
    4.
    发明授权
    Electronic device 有权
    电子设备

    公开(公告)号:US08953309B2

    公开(公告)日:2015-02-10

    申请号:US13616677

    申请日:2012-09-14

    IPC分类号: H05K5/00

    CPC分类号: G06F1/166 G06F1/203

    摘要: An electronic device is provided, including a main body, a bottom shell, and an electrical connection port. The bottom shell is pivotally connected to the main body, and the electrical connection port is disposed on the bottom shell. When the bottom shell is in a closed position relative to the main body, the electrical connection port is covered by the main body. When the bottom shell rotates from the closed position to an opened position relative to the main body, an opening is formed between the main body and the bottom shell, and the electrical connection port is exposed to the opening.

    摘要翻译: 提供一种电子设备,包括主体,底壳和电连接端口。 底壳枢转地连接到主体,并且电连接端口设置在底壳上。 当底壳相对于主体处于关闭位置时,电连接口被主体覆盖。 当底壳从关闭位置相对于主体旋转到打开位置时,在主体和底壳之间形成开口,并且电连接口暴露于开口。

    Semiconductor package structure
    7.
    发明授权
    Semiconductor package structure 有权
    半导体封装结构

    公开(公告)号:US08581384B2

    公开(公告)日:2013-11-12

    申请号:US13426804

    申请日:2012-03-22

    IPC分类号: H01L23/48

    摘要: A semiconductor package structure comprises a lead frame, at least one chip, a molding compound and an anti-conduction film. The lead frame comprises a plurality of leads, each of the leads comprises a first end portion and a second end portion, wherein the first end portion comprises a first upper surface and a first lower surface, and the second end portion comprises a second upper surface and a second lower surface. The chip comprises a plurality of bumps electrically connected with the lead frame. The chip and the leads are covered with the molding compound. The first lower surface of each of the first end portions and the second lower surface of each of the second end portions are exposed by the molding compound. The first lower surface of the first end portion of each of the leads is covered with the anti-conduction film.

    摘要翻译: 半导体封装结构包括引线框架,至少一个芯片,模塑料和抗导电膜。 引线框架包括多个引线,每个引线包括第一端部和第二端部,其中第一端部包括第一上表面和第一下表面,并且第二端部包括第二上表面 和第二下表面。 芯片包括与引线框电连接的多个凸块。 芯片和引线被模塑料覆盖。 每个第二端部的每个第一端部和第二下表面的第一下表面被模塑料暴露。 每个引线的第一端部的第一下表面被抗导电膜覆盖。

    Method of producing amorphous Co-Tb magnetic recording thin films
    9.
    发明授权
    Method of producing amorphous Co-Tb magnetic recording thin films 失效
    制造无定形Co-Tb磁记录薄膜的方法

    公开(公告)号:US6117282A

    公开(公告)日:2000-09-12

    申请号:US935739

    申请日:1997-09-23

    摘要: A method of producing SiNx protected amorphous Co-Tb thin films with high coercivity for longitudinal and perpendicular magnetic recording media is described. The method includes magnetron sputtering at controlled sputtering power and sputtering argon gas pressure to form a selective composition of amorphous Co-Tb thin film on a low temperature substrate. After the Co-Tb film is deposited, a protective SiNx layer with thickness of 100 .ANG. was produced on the film. The as-deposited film has an amorphous structure with a high value of coercivity, and its magnetic easy-axis is perpendicular to the film plane. This film can be used as a perpendicular magnetic recording medium. After low temperature annealing at controlled conditions for a desirable temperature and time period in vacuum, the film also has an amorphous structure but its magnetic properties are isotropic. This film can be used as a longitudinal magnetic recording medium.

    摘要翻译: 描述了制造用于纵向和垂直磁记录介质的具有高矫顽力的SiNx保护的无定形Co-Tb薄膜的方法。 该方法包括在受控溅射功率和溅射氩气压力下的磁控溅射,以在低温基底上形成非晶Co-Tb薄膜的选择性组成。 在沉积Co-Tb膜之后,在膜上产生厚度为100安培的保护性SiNx层。 沉积膜具有矫顽磁力高的非晶结构,其磁性容易轴垂直于膜平面。 该膜可以用作垂直磁记录介质。 在控制条件下在真空中达​​到所需温度和时间段的低温退火后,该膜也具有非晶结构,但其磁特性是各向同性的。 该膜可以用作纵向磁记录介质。