公开(公告)号：US12217957B2

公开(公告)日：2025-02-04

申请号：US18104148

申请日：2023-01-31

Applicant: QROMIS, Inc.

Inventor： Vladimir Odnoblyudov ,  Cem Basceri ,  Shari Farrens

IPC: H01L21/02 ,  C23C16/24 ,  C23C16/30 ,  C23C16/34 ,  C30B25/18 ,  C30B29/06 ,  C30B29/40 ,  C30B29/68 ,  C30B33/06 ,  C30B33/08 ,  H01L21/74 ,  H01L21/8252 ,  H01L23/535 ,  H01L29/20 ,  H01L21/762 ,  H01L29/778 ,  H01L29/80

Abstract: A substrate includes a support structure comprising a polycrystalline ceramic core, a first adhesion layer encapsulating the polycrystalline ceramic core, a barrier layer encapsulating the first adhesion layer, a second adhesion layer coupled to the barrier layer, and a conductive layer coupled to the second adhesion layer. The substrate also includes a bonding layer coupled to the support structure, a substantially single crystal silicon layer coupled to the bonding layer, and an epitaxial semiconductor layer coupled to the substantially single crystal silicon layer.

公开(公告)号：US20240417882A1

公开(公告)日：2024-12-19

申请号：US18701361

申请日：2022-06-23

Applicant: SHIN-ETSU CHEMICAL CO., LTD.,

Inventor： Yoshihiro KUBOTA ,  Shigeru KONISHI ,  Hiroshi MOGI ,  Koichi HIGUCHI

IPC: C30B25/18 ,  C23C16/02 ,  C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  C23C16/50 ,  C30B29/06 ,  C30B29/40 ,  C30B29/68 ,  C30B31/22 ,  H01L21/02

Abstract: A seed substrate for epitaxial growth has a support substrate, a planarizing layer of 0.5 to 3 μm provided on the top surface of the support substrate, and a seed crystal layer provided on the top surface of the planarizing layer. The support substrate includes a core of group III nitride polycrystalline ceramics and a 0.05 to 1.5 μm encapsulating layer that encapsulates the core having surface voids filled and flattened by Al or Si oxide, nitride, oxynitride, or a mixture thereof. The seed crystal layer is provided by thin-film transfer of 0.1 to 1.5 μm of the surface layer of Si single crystal with oxidation-induced stacking faults (OSF) of less than 10 defects/cm2.

公开(公告)号：US20240401238A1

公开(公告)日：2024-12-05

申请号：US18797959

申请日：2024-08-08

Applicant: NGK INSULATORS, LTD.

Inventor： Kentaro NONAKA ,  Takahiro TAMURA ,  Sota MAEHARA ,  Yoshitaka KURAOKA

IPC: C30B29/68 ,  C30B19/02 ,  C30B29/40 ,  H01L29/20 ,  H01L29/205

Abstract: A laminate includes a group 13 nitride single crystal substrate composed of a group 13 nitride single crystal and having a first main face and a second main face, a buffer layer provided on the first main face of the group 13 nitride single crystal substrate, a channel layer provided on the buffer layer and a barrier layer provided on the channel layer. The channel layer has a thickness of 700 nm or smaller, and the first main face of the group 13 nitride single crystal substrate has an off-angle of 0.4° or more and 1.0° or less.

公开(公告)号：US20240371628A1

公开(公告)日：2024-11-07

申请号：US18683339

申请日：2022-08-18

Applicant: SHIN-ETSU HANDOTAI CO., LTD.

Inventor： Kazunori HAGIMOTO ,  Ippei KUBONO

IPC: H01L21/02 ,  C30B25/18 ,  C30B29/40 ,  C30B29/68 ,  H01L29/778

Abstract: A method for manufacturing a nitride semiconductor substrate in which a nitride semiconductor is formed on a substrate for film formation includes: (1) subjecting a substrate for film formation made of single-crystal silicon to heat treatment under a nitrogen atmosphere to form a silicon nitride film on the substrate for film formation, (2) growing an AlN film on the silicon nitride film, and (3) growing a GaN film, an AlGaN film, or both on the AlN film. A method for manufacturing a nitride semiconductor substrate can prevent diffusion of Al to the high-resistance single-crystal silicon substrate when the AlN layer is epitaxially grown on the high-resistance single-crystal silicon substrate, and the GaN or the AlGaN layer is epitaxially grown on top of that.

公开(公告)号：US12112976B2

公开(公告)日：2024-10-08

申请号：US17088426

申请日：2020-11-03

Applicant: Soitec

Inventor： Fabrice Letertre ,  Oleg Kononchuk

IPC: H01L21/762 ,  B32B7/12 ,  B32B9/04 ,  B32B38/00 ,  C30B29/68 ,  C30B33/00 ,  C30B33/06 ,  H01L21/02 ,  H01L21/18 ,  H01L27/12 ,  H01L33/00

CPC classification number: H01L21/76251 ,  B32B7/12 ,  B32B9/04 ,  C30B29/68 ,  C30B33/00 ,  C30B33/06 ,  H01L21/02002 ,  H01L21/185 ,  H01L27/1203 ,  B32B2457/14 ,  H01L33/0093 ,  Y10T156/1062 ,  Y10T428/24942

Abstract: The invention relates to a method for fabricating a pseudo-substrate comprising the steps of providing a single crystal ingot, providing a handle substrate, cutting a thin slice from the single crystal ingot, and attaching the thin slice to the handle substrate to form a pseudo-substrate. According to the invention, the thickness of the thin slice is substantially equal or inferior to a critical thickness below which the slice, if taken alone, is no longer mechanically stable. The invention further relates to a semiconductor structure.

公开(公告)号：US20240229292A1

公开(公告)日：2024-07-11

申请号：US18151550

申请日：2023-01-09

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Jungwoo Lee ,  Jieun Kim

IPC: C30B23/02 ,  C30B29/24 ,  C30B29/30 ,  C30B29/32 ,  C30B29/68

CPC classification number: C30B23/02 ,  C30B29/24 ,  C30B29/30 ,  C30B29/32 ,  C30B29/68

Abstract: Apparatus and methods for growing films of complex layered metal oxides with high stoichiometries and high crystal qualities are provided. The layered complex metal oxides include two or more metals and oxygen and have a layered structure. The methods, which are referred to as hybrid pulsed laser deposition (hybrid PLD), synergistically combine the advantages of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) to grow complex metal oxide films that include metals with very different vapor pressures.

公开(公告)号：US11952677B2

公开(公告)日：2024-04-09

申请号：US16926822

申请日：2020-07-13

Applicant: Tokuyama Corporation

Inventor： Masao Ariyuki

IPC: C30B25/18 ,  C08J7/06 ,  C11D7/08 ,  C11D7/26 ,  C23C16/02 ,  C23C16/34 ,  C30B29/40 ,  C30B29/68 ,  C30B33/10 ,  H01L21/02 ,  H01L21/3105 ,  C01B21/072 ,  C01F7/00 ,  C11D3/37 ,  C11D7/06

CPC classification number: C30B25/186 ,  C08J7/06 ,  C11D7/08 ,  C11D7/265 ,  C23C16/0227 ,  C23C16/34 ,  C30B25/18 ,  C30B29/403 ,  C30B29/68 ,  C30B33/10 ,  H01L21/02024 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/02096 ,  H01L21/02178 ,  H01L21/02271 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/31053 ,  C01B21/072 ,  C01F7/00 ,  C08J2329/04 ,  C08J2367/00 ,  C08J2377/00 ,  C08J2379/04 ,  C11D3/37 ,  C11D7/06 ,  C11D2111/22 ,  C22C2200/00

Abstract: A method for effectively removing minute impurities of 1 μm or less in size that are present on a surface of an aluminum nitride single-crystal substrate without etching the surface includes scrubbing a surface of an aluminum nitride single-crystal substrate using a polymer compound material having lower hardness than an aluminum nitride single crystal, and an alkali aqueous solution having 0.01-1 mass % concentration of potassium hydroxide or sodium hydroxide, the alkali aqueous solution being absorbed in the polymer compound material.

公开(公告)号：US20240093407A1

公开(公告)日：2024-03-21

申请号：US18522460

申请日：2023-11-29

Applicant: THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK

Inventor： Fang Liu ,  Xiaoyang Zhu ,  James Hone ,  Sang Hoon Chae

IPC: C30B33/00 ,  B32B7/02 ,  B32B18/00 ,  B32B37/00 ,  B32B37/18 ,  B32B43/00 ,  C23C14/16 ,  C23C14/30 ,  C30B29/46 ,  C30B29/68

CPC classification number: C30B33/00 ,  B32B7/02 ,  B32B18/00 ,  B32B37/025 ,  B32B37/18 ,  B32B43/006 ,  C23C14/16 ,  C23C14/30 ,  C30B29/46 ,  C30B29/68 ,  B32B2315/02 ,  C01G41/00

Abstract: Systems and methods for generating one or more single crystal monolayers from two-dimensional van der Waals crystals are disclosed herein. Example methods include providing a bulk material including a plurality of van der Waals crystal layers, and exfoliating one or more single crystal monolayers of van der Waals crystal from the bulk material by applying a flexible and flat metal tape to a surface of the bulk material. In certain embodiments, the one or more single crystal monolayers can be assembled into an artificial lattice. The present disclosure also provides techniques for manufacturing flexible and flat metal tape for generating one or more single crystal monolayers from two-dimensional van der Waals crystals. The present disclosure also provides compositions for creating a macroscopic artificial lattice. In certain embodiments, the composition can include two or more macroscopic single crystal monolayers adapted from a bulk van der Waals crystal, where the single crystal monolayers are configured for assembly into an artificial lattice based on one or more properties.

公开(公告)号：US20240071761A1

公开(公告)日：2024-02-29

申请号：US18356211

申请日：2023-07-20

Applicant: ENKRIS SEMICONDUCTOR, INC.

Inventor： Kai Cheng

IPC: H01L21/02 ,  C30B25/04 ,  C30B29/68

CPC classification number: H01L21/02639 ,  C30B25/04 ,  C30B29/68 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02645 ,  H01L21/02647 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458

Abstract: In the present disclosure, a semiconductor structure and a manufacturing method of the semiconductor structure are provided. The semiconductor structure includes a base, a first mask layer, a first epitaxial layer, and a second epitaxial layer. The first mask layer is located on the base, and the first mask layer has a first window that exposes the base. The first window includes an opening end far from the base and a bottom wall end close to the base. On the plane where the base is located, the orthographic projection of the opening end falls within the bottom wall end.

公开(公告)号：US20240052521A1

公开(公告)日：2024-02-15

申请号：US18492482

申请日：2023-10-23

Applicant: Applied Materials, Inc.

Inventor： Yen Lin LEOW ,  Xinning LUAN ,  Hui CHEN ,  Kirk Allen FISHER ,  Shawn THOMAS

IPC: C30B25/16 ,  C30B29/36 ,  C30B29/68 ,  C30B25/18 ,  C30B25/10

CPC classification number: C30B25/16 ,  C30B29/36 ,  C30B29/68 ,  C30B25/18 ,  C30B25/10

Abstract: Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800° C. to less than 1,000° C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000° C. to about 1,400° C. to form a second silicon carbide layer on the first silicon carbide layer.