Abstract:
A semiconductor die assembly of this invention includes a lead system in which the leads (16) are arranged in a radial pattern. That is, in a group of leads associated with a single side of a semiconductor die (10), leads which are furthest from the middle are most angled from the perpendicular. The semiconductor die includes an outer row of bond pads (12a) which are located proximate to the edge of the semiconductor die and an inner row of bond pads (12b), parallel to the first row and located toward the interior of the semiconductor die surface. In one embodiment, one of the rows of bond pads is regularly spaced, while the other row of bond pads is variably spaced. The bond pads of the variably spaced row are positioned such that a bond wire (18) which connects a bond pad of the inner row to its associated lead (16) will pass substantially medially between the centers of the two closest bond pads of the outer row.
Abstract:
A semiconductor component having electrode terminals 14 formed in rectangular planar shapes arranged in parallel on an electrode forming surface of a semiconductor chip and formed with rerouting patterns 16 electrically connected with the electrode terminals 14 through vias on the surface of an electrical insulating layer covering the electrode forming surface, characterized in that the planar arrangement of the via pads 20 formed on the surface of the electrical insulating layer is made an arrangement alternately offset to one side and the other side of the longitudinal direction of the electrode terminals 14 and in that rerouting patterns 16 are provided connected to the via pads 20. The present invention enables easy formation of rerouting patterns even when the electrode terminals are arranged at fine intervals.
Abstract:
A semiconductor die assembly of this invention includes a lead system in which the leads (16) are arranged in a radial pattern. That is, in a group of leads associated with a single side of a semiconductor die (10), leads which are furthest from the middle are most angled from the perpendicular. The semiconductor die includes an outer row of bond pads (12a) which are located proximate to the edge of the semiconductor die and an inner row of bond pads (12b), parallel to the first row and located toward the interior of the semiconductor die surface. In one embodiment, one of the rows of bond pads is regularly spaced, while the other row of bond pads is variably spaced. The bond pads of the variably spaced row are positioned such that a bond wire (18) which connects a bond pad of the inner row to its associated lead (16) will pass substantially medially between the centers of the two closest bond pads of the outer row.
Abstract:
A pad (20) is electrically connected to a first I/O cell (14) while also physically overlying active circuitry of a second I/O cell (16). Note that although the pad (20) overlies the second I/O cell (16), the pad (20) is not electrically connected to the I/O cell (16). Such a pattern may be replicated in any desired manner so that the I/O cells (e.g. 300-310) may have a finer pitch than the corresponding pads (320-324 and 330-335). In addition, the size of the pads may be increased (e.g. pad 131 may be bigger than pad 130) while the width "c" of the I/O cells (132-135) does not have to be increased. Such a pattern (e.g. 500) may be arranged so that the area required in one or more dimensions may be minimized.
Abstract:
A pad (20) is electrically connected to a first I/O cell (14) while also physically overlying active circuitry of a second I/O cell (16). Note that although the pad (20) overlies the second I/O cell (16), the pad (20) is not electrically connected to the I/O cell (16). Such a pattern may be replicated in any desired manner so that the I/O cells (e.g. 300-310) may have a finer pitch than the corresponding pads (320-324 and 330-335). In addition, the size of the pads may be increased (e.g. pad 131 may be bigger than pad 130) while the width "c" of the I/O cells (132-135) does not have to be increased. Such a pattern (e.g. 500) may be arranged so that the area required in one or more dimensions may be minimized.
Abstract:
Integrated circuit dies are provide with a passivation layer having a plurality of differently sized openings exposing bond pads for bonding. The sizes of the bond pads vary in a manner that at least partially compensates for stresses during bonding, such as flip chip thermocompression bonding, due to asymmetric distribution of bond pads.
Abstract:
An interconnection contact structure assembly including an electronic component (102) having a surface and a conductive contact terminal (103) carried by the electronic component (102) and accessible at the surface. The contact structure (101) includes an internal flexible elongate member (106) having first (107) and second ends (108) and with the first end (107) forming a first intimate bond to the surface of the conductive contact terminal (103) without the use of a separate bonding material. An electrically conductive shell (116) is provided and is formed of at least one layer of a conductive material enveloping the elongate member (106) and forming a second intimate bond with at least a portion of the conductive contact terminal immediately adjacent the first intimate bond.