公开(公告)号：EP0488165A3

公开(公告)日：1993-10-13

申请号：EP91120181.2

申请日：1991-11-26

申请人： HITACHI, LTD.

发明人： Yokosuka, Tsunenobu ,  Honda, Takashi

IPC分类号： C21D1/09 ,  C23C26/00 ,  B23K26/00 ,  G21C19/46 ,  C09K5/04 ,  G21C3/07 ,  G21C21/00 ,  G21C7/08

CPC分类号： C23C26/02 ,  C21D1/09 ,  G21C3/07 ,  G21Y2002/103 ,  G21Y2004/20 ,  H01L23/49582 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/05639 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48639 ,  H01L2224/73265 ,  H01L2224/85439 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/181 ,  Y02E30/40 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A metallic member with an improved surface layer exhibiting good corrosion resistance is provided. The metallic member consists of a base material and the surface layer. The surface layer is formed by a remelting and solidifying treatment of the surface of the base material, and consists of a plurality of minutely thin layers. An non-treated metallic member is dipped in an aqueous solution containing at least one metal ion and a reducing agent. A high density energy beam is applied to the metallic member in the solution in order to remelt and solidify the surface layer of the member. The improved surface layer contains the metal of the reduced metal ion.

公开(公告)号：EP0521335A1

公开(公告)日：1993-01-07

申请号：EP92110122.6

申请日：1992-06-16

申请人： FUJITSU LIMITED

发明人： Sono, Michio, c/o Fujitsu Limited ,  Kasai, Junichi, c/o Fujitsu Limited ,  Saito, Kouji, c/o Fujitsu Limited ,  Mitobe, Kazuhiko, c/o Fujitsu Limited ,  Yoshimoto, Masanori, c/o Fujitsu Limited

IPC分类号： H01L23/495

CPC分类号： H05K1/0203 ,  H01L23/49555 ,  H01L23/49568 ,  H01L23/49575 ,  H01L23/49582 ,  H01L2224/05554 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/19107 ,  H05K1/181 ,  H05K2201/10166 ,  H05K2201/10454 ,  H05K2201/10469 ,  H05K2201/1053 ,  H05K2201/10659 ,  Y02P70/611 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device comprises a semiconductor chip; a resin package body (11) for accommodating the semiconductor chip; a plurality of interconnection leads (14) provided on the resin package body along a lower edge of the package body such that the interconnection leads project outward from the lower edge; and a heat dissipation lead (31) held on the resin package body for dissipating heat generated by the semiconductor chip. The heat dissipation lead (31) comprises a plate of a heat conducting material having a stage part and a heat sink part, wherein the stage part is held inside the resin package body and supporting the semiconductor chip thereon, while the heat sink part projects outward from the resin package body and including a part that extends in a downward direction. The heat sink part has a lower edge (31a) that is formed at a level substantially flush with the outer lead part of the interconnection leads such that the semiconductor device is held upright, when placed on the substrate, by the outer lead part of the interconnection leads and by the lower edge of the heat sink part of the heat dissipation lead.

摘要翻译： 半导体器件包括半导体芯片; 用于容纳半导体芯片的树脂封装体（11）; 多个互连引线（14），沿着所述封装体的下边缘设置在所述树脂封装主体上，使得所述互连引线从所述下边缘向外突出; 以及保持在树脂封装主体上用于散发由半导体芯片产生的热量的散热引线（31）。 散热引线31包括具有台部和散热部的导热材料板，其中台部保持在树脂封装主体的内部并在其上支撑半导体芯片，同时散热部向外伸出 并且包括沿向下方向延伸的部分。 散热部分具有下边缘（31a），该下边缘形成在与互连引线的外引线部分基本齐平的水平面上，使得半导体器件在被放置在基板上时被直立地保持在基板的外引线部分上 互连引线和散热片散热片的下边缘。

公开(公告)号：EP0512579A1

公开(公告)日：1992-11-11

申请号：EP92110466.7

申请日：1987-11-24

申请人： HITACHI, LTD.

发明人： Kitamura, Wahei ,  Nishi, Kunihiko ,  Murakami, Gen

IPC分类号： B65D81/26 ,  B65D65/40 ,  H05K13/00 ,  H01L21/00

CPC分类号： B32B27/08 ,  B32B27/18 ,  B32B27/304 ,  B32B27/32 ,  B32B2307/7246 ,  B32B2311/24 ,  B32B2323/04 ,  B32B2327/06 ,  B32B2439/00 ,  B65D79/02 ,  B65D81/266 ,  H01L21/67121 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/49506 ,  H01L23/49582 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20753 ,  H05K13/0084 ,  Y10S174/08 ,  Y10S428/922 ,  Y10T29/49121 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A package of semiconductor elements comprises:
   at least one surface-mounting semiconductor device;
   a desiccant; and
   a moisture-proofing bag member which is made of multi-layered film, said multi-layered film comprising a barrier layer for preventing intrusion of moisture, an inner charge preventing layer formed inside of said barrier, and an outer charge preventing layer formed outside of said barrier layer,
   the furface-mounting semiconductor device and the desiccant being sealed in said moisture-proofing bag member.

摘要翻译： 一种半导体元件包括：至少一个表面安装半导体器件; 干燥剂 以及由多层膜制成的防潮袋构件，所述多层膜包括防止水分侵入的阻挡层，形成在所述阻挡层内部的内部电荷防止层，以及形成在外部的外部电荷防止层 的所述阻挡层，所述表面安装半导体装置和所述干燥剂被密封在所述防潮袋构件中。

公开(公告)号：EP0474499A2

公开(公告)日：1992-03-11

申请号：EP91308157.6

申请日：1991-09-05

申请人： SHINKO ELECTRIC INDUSTRIES CO. LTD.

发明人： Wakabayashi, Norio ,  Murata, Akihiko

IPC分类号： H01L23/495

CPC分类号： H01L23/49582 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/451 ,  H01L2224/48247 ,  H01L2224/85464 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2224/45099 ,  H01L2924/00015 ,  H01L2224/05599

摘要： A lead frame (10) for a semiconductor device comprising: a lead frame material made of a metal strip (20) and including at least a plurality of inner (14) and outer (12) leads, a Pd or Pd-alloy film (24) formed directly or via an underlayer film (26) on an entire surface of the lead frame material; and an Ag- or Au-plated film (28) further formed on the Pd or Pd-alloy film (24) of at least said outer leads (12) of the lead frame material.

摘要翻译： 一种用于半导体器件的引线框架（10），包括：引线框架材料，由金属条（20）制成并且包括至少多个内部（14）和外部（12）引线，Pd或Pd合金膜 24）直接或经由底层膜（26）形成在引线框架材料的整个表面上; 以及进一步形成在所述引线框架材料的至少所述外引线（12）的Pd或Pd合金膜（24）上的Ag或Au镀膜（28）。

公开(公告)号：EP0297511A3

公开(公告)日：1991-03-13

申请号：EP88110305.5

申请日：1988-06-28

申请人： SUMITOMO ELECTRIC INDUSTRIES, LIMITED

发明人： Sasame, Akira c/o Itami Works of Sumitomo ,  Sakanoue, Hitoyuki c/o Itami works of Sumitomo ,  Tekeuchi, Hisao c/o Itami works of Sumitomo ,  Miyake, Masaya c/o Itami works of Sumitomo ,  Yamakawa, Akira c/o Itami works of Sumitomo ,  Yushio, Yasuhisa c/o Itami works of Sumitomo ,  Akazawa, Hitoshi c/o Itami works of Sumitomo

IPC分类号： H01L23/50 ,  H01L21/48 ,  H01L23/14 ,  H01L23/08 ,  H01L23/10

CPC分类号： H05K3/3405 ,  H01L21/4853 ,  H01L23/10 ,  H01L23/49582 ,  H01L23/49811 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12033 ,  H01L2924/12042 ,  H05K1/0306 ,  H05K3/246 ,  H05K3/3421 ,  H05K2201/0347 ,  H05K2201/1025 ,  H05K2201/1034 ,  H05K2201/10909 ,  H05K2201/10916 ,  Y10T428/12576 ,  H01L2224/45099 ,  H01L2924/00

摘要： A connection structure between lead frames (3) and a base plate (1) of aluminum nitride, to be applied as a connection structure between components of a semiconductor apparatus, comprises the base plate formed of a sintered body of aluminum nitride on which a semiconductor device is to be mounted, the lead frames including, as a main material, iron alloy containing nickel in 29 wt.% and cobalt in 17 wt.%, and silver solder (9) for joining the base plate and the lead frames. A surface of the lead frame to be joined to the base plate is formed of oxygen-free copper of a high plastic deformativity to relieve, by plastic deformation of itself, a thermal stress caused by a difference between a thermal expansion coefficient of the base plate and that of the lead frame in a cooling process at the time of soldering. Preferably, only a portion of each lead frame (3) to be joined to the base plate comprises an inner layer portion of iron alloy containing nickel in 29 wt.% and cobalt in 17 wt.%, and an outer layer portion of oxygen-free copper.

公开(公告)号：EP0349095A3

公开(公告)日：1990-05-02

申请号：EP89202084.3

申请日：1983-02-23

申请人： HITACHI, LTD.

发明人： Onuki, Jin ,  Suwa, Masateru ,  Koizumi, Masahiro ,  Iizuka, Tomio ,  Tamamura, Takeo

IPC分类号： H01L21/607 ,  H01L23/49 ,  B23K20/00

CPC分类号： H01L24/85 ,  B23K20/007 ,  B23K2201/42 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/48 ,  H01L23/49 ,  H01L23/4952 ,  H01L23/49582 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/78 ,  H01L2224/05624 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/43 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45164 ,  H01L2224/45166 ,  H01L2224/45169 ,  H01L2224/4517 ,  H01L2224/4518 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/4851 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48655 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48755 ,  H01L2224/48799 ,  H01L2224/48839 ,  H01L2224/48855 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/85043 ,  H01L2224/85045 ,  H01L2224/85075 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85424 ,  H01L2224/85439 ,  H01L2224/85455 ,  H01L2224/85948 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  Y10T428/12431 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/48824 ,  H01L2924/00015 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/2075 ,  H01L2924/01049 ,  H01L2924/01006

摘要： A metal wire for use in connection to integrated circuits has a ball at its tip. The wire has a diameter of 20 to 100 µm and a maximum elongation of not more than 60% at room temperature (20°C) and is an Al wire or a Cu wire. The wire has been annealed at a temperature higher than the recrystallization temperature of the metal material in a non-oxidizing atmosphere. The ball is spherical in shape and has a hardness substantially equal to that of the metal wire. When used, this wire avoids local deformation.

摘要翻译： 树脂封装的半导体器件包括半导体元件（3），导电端子（4）和连接元件（3）和端子（4）的导线（1）。 热固性树脂（12）密封该部件，以保护装置免受机械应力和环境气氛的影响。 为了在其端部实现线（1）的良好的接合，线（1）由处于退火状态的金属（例如Al）制成，室温下的最大伸长率不超过60％，线 在接合之前已经退火。

公开(公告)号：EP0269410A2

公开(公告)日：1988-06-01

申请号：EP87310344.4

申请日：1987-11-24

申请人： HITACHI, LTD.

发明人： Kitamura, Wahei ,  Murakami, Gen ,  Nishi, Kunihiko

IPC分类号： B65D81/26

CPC分类号： B32B27/08 ,  B32B27/18 ,  B32B27/304 ,  B32B27/32 ,  B32B2307/7246 ,  B32B2311/24 ,  B32B2323/04 ,  B32B2327/06 ,  B32B2439/00 ,  B65D79/02 ,  B65D81/266 ,  H01L21/67121 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/49506 ,  H01L23/49582 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20753 ,  H05K13/0084 ,  Y10S174/08 ,  Y10S428/922 ,  Y10T29/49121 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A plurality of semiconductor elements 12 are located within suitahble carriers 13, and a plurality of such carriers 13 are enclosed within a bag 17 or other container. The bag 17 is made from a moisture-proof film 11 which is air sealed to enclose the elements 12. To eliminate moisture within the bag 17, a desiccant may be provided within the bag 17 and/or within the carriers 13. Furthermore a humidity indicator 15 may be provided within the bag 17, which is visible from the outside of the bag 17, and hence provides a visual indication if there is condensation within the bag 17 which could affect the elements 12. As a further step, the film 11 may be multi-­layered with one layer being a metal sheet.
In this way, contamination by moisture of the semiconductor elements during storage or transport may be reduced, thereby reducing the risk of damage when the semiconductor elements are mounted on a substrate.

公开(公告)号：EP0154187A2

公开(公告)日：1985-09-11

申请号：EP85101301.1

申请日：1985-02-07

申请人： Olin Corporation

发明人： Butt, Sheldon H.

IPC分类号： H01L23/48 ,  H01L21/60

CPC分类号： H01L24/50 ,  H01L23/433 ,  H01L23/49565 ,  H01L23/49582 ,  H01L24/45 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01043 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2924/20752

摘要： An electronic circuit assembly (10) is disclosed induding a semiconductor die (12) having an aluminum terminal pad (14) on its top surface (16). A lead frame (18) is disposed adjacent the semiconductor die (12) and is adapted to be electronically connected to the die (12). A biclad (22). (32), (70) or triclad (52) transfer tape characterized by a first member formed from a nickel containing material and a aeccnd member formed from a copper containing material interconnects the terminal pad (14) to the lead frame (18).

摘要翻译： 公开了一种电子电路组件（10），其包括在其顶表面（16）上具有铝端子焊盘（14）的半导体管芯（12）。 引线框架（18）邻近半导体管芯（12）设置，并且适于电连接到管芯（12）。 具有由含镍材料形成的第一部件和由含铜材料形成的第二部件的双面（22），（32），（70）或三角形（52）转移带，其特征在于，将端子焊盘（14）与 引线框架（18）。

公开(公告)号：EP0058761A2

公开(公告)日：1982-09-01

申请号：EP81109281.6

申请日：1981-10-29

申请人： SIEMENS AKTIENGESELLSCHAFT

发明人： Ullrich, Hans, Dr. Dipl.-Phys. ,  Freitag, Theodor, Dipl.-Phys.

IPC分类号： H01L23/48 ,  H05K1/02 ,  H01L21/60

CPC分类号： H01L23/49579 ,  H01L23/49582 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Die Erfindung betrifft einen Systemträger (1) für mit Kunststoff umhüllte elektrische Bauelemente. Um die Systemträgerkosten (Herstellungskosten und Materialkosten) bei ausreichender thermischer und elektrischer Leitfähigkeit sowie guter Kontaktierbarkeit und Lötbarkeit möglichst gering zu halten, besteht der Systemträger (1) wenigstens teilweise aus einer Aluminiumlegierung.

摘要翻译： 1.一种用于树脂封装的电气部件，特别是半导体部件的引线框架，其中部件安装在引线框架上，其特征在于，引线框架不具有任何表面涂层并且完全由铝合金组成。

公开(公告)号：EP2130222B1

公开(公告)日：2018-09-05

申请号：EP08709986.7

申请日：2008-02-11

申请人： III Holdings 6, LLC

发明人： HERES, Klass ,  DIJKSTRA, Paul ,  NOLLEN, Maarten

IPC分类号： H01L23/31 ,  H01L23/495

CPC分类号： H01L23/3121 ,  H01L21/4832 ,  H01L23/49531 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/181 ,  H05K3/244 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

摘要： A carrier (100) for bonding a semiconductor chip (114) onto is provided, wherein the carrier (100) comprises a die pad (101) and a plurality of contact pads (102), wherein each of the plurality of contact pads (102) comprises an electrically conductive multilayer stack, wherein the electrically conductive multilayer stack comprises a surface layer (109), a first buffer layer, and a first conductive layer (108). Furthermore, the first buffer layer comprises a material adapted to prevent diffusion of material of the surface layer (109) into the first conductive layer (108), and at least two of the contact pads (102) has an ultrafine pitch relative to each other.