Abstract:
Resilient contact structures (430) are mounted directly to bond pads (410) on semiconductor dies (402a, 402b), prior to the dies (402a, 402b) being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies (402a, 402b) to be exercised (e.g., tested and/or burned-in) by connecting to the semiconductor dies (702, 704) with a circuit board (710) or the like having a plurality of terminals (712) disposed on a surface thereof. Subsequently, the semiconductor dies (402a, 402b) may be singulated from the semiconductor wafer, whereupon the same resilient contact structures (430) can be used to effect interconnections between the semiconductor dies and other electronic components (such as wiring substrates, semiconductor packages, etc.). Using the all-metallic composite interconnection elements (430) of the present invention as the resilient contact structures, burn-in (792) can be performed at temperatures of at least 150 °C, and can be completed in less than 60 minutes.
Abstract:
On the board provided with a conductive layer (5), a pad (16) is formed to fix a conductive connecting pin (100) on a package board (310). The conduction connecting pin (100) serves as electrical connection to a motherboard. The pad (16) is coated with an organic-resin insulating layer (15) having an opening section (18) from which the pad (16) is partially exposed. The conductive connecting pin (100) is fixed to the pad exposed from the opening section using a conductive adhesive (17), preventing the conductive connecting pin (100) from separating off the board at the time of mounting.
Abstract:
The probe card assembly (500) includes a probe card (502), and a space transformer (506) having resilient contact structures (524) mounted to and extending from terminals (522) on its surface. An interposer (504) is disposed between the space transformer and the probe card. The space transformer and interposer are stacked on the probe card and the resilient contact structures can be arranged to optimise probing of entire wafer.
Abstract:
Die Erfindung beschreibt ein Leistungshalbleitermodul mit aktiven und passiven Bauelementen, insbesondere ein Stromrichtermodul. Bei der Erhöhung der Leistungsfähigkeit, der Zuverlässigkeit sowie der Lebensdauer bei gleichzeitig verringerten Herstellungskosten sind veränderte Methoden der Aufbautechnologien für die einzelnen Bestandteile eine zwingende Voraussetzung. Bei diesem Leistungshalbleitermodul wird zumindest teilweise auf Bondverbindungen zur elektrischen Verbindung der Leistungshalbleiterbauelement mit den Kontaktflächen des Substrats verzichtet, indem mindestens ein gehaustes Leistungshalbleiterbauelement (40), mit Kontaktelementen (410, 420) verbunden mit Kontaktflächen (220) eingesetzt wird.
Abstract:
An interconnection contact structure assembly including an electronic component (102) having a surface and a conductive contact terminal (103) carried by the electronic component (102) and accessible at the surface. The contact structure (101) includes an internal flexible elongate member (106) having first (107) and second ends (108) and with the first end (107) forming a first intimate bond to the surface of the conductive contact terminal (103) without the use of a separate bonding material. An electrically conductive shell (116) is provided and is formed of at least one layer of a conductive material enveloping the elongate member (106) and forming a second intimate bond with at least a portion of the conductive contact terminal immediately adjacent the first intimate bond.
Abstract:
The efficacy of electrical discharges for severing bond wires (102, 202) and/or for forming balls (234, 236) at the ends of bond wires (including bond wires (202) already severed by alternative mechanisms) is improved by performing the electrical discharges in the presence of ultraviolet light (130). A 'spark gap' is formed between an EFO electrode (118, 232) and the wire (102, 202), one of which serves as the cathode of the spark gap. Preferably, the ultraviolet light (130) is directed at the element serving as the cathode of the spark gap. Providing photoemission at the cathode element of the spark gap stabilizes arc/plasma formation and produces more reliable and predictable results. This technique may be used in conjunction with negative EFO systems or with positive EFO systems, and may benefit from either direct or field-assisted photoemission.
Abstract:
A method of connecting to a semiconductor device comprises the steps of permanently mounting a plurality of elongate electrical contact structures (1330) to a semiconductor device (1302), the semiconductor device comprising at least one die; urging the semiconductor device against a first electronic component (1310) to effect a temporary connection between the semiconductor device and the first electronic component, with the electrical contact structures serving as electrical interconnects between the semiconductor device and the first electronic component; and using at least a plurality of the same electrical contact structures mounted to the semiconductor device to effect a permanent connection between at least one die of the semiconductor device and a second electronic component.
Abstract:
An integrated circuit device which has an excellent heat radiating property and is used for such consumer products as electronic equipment, electric equipment, communication equipment, and measurement control equipment, etc. A power source (4) and a plurality of pin terminals (5) are mounted on a metal plate (1). A cache controller (10), a cache memory section (11), a data buffer (LSI) section (14), a (CPU) chip (8), and a connector (12) are mounted on a multiplayer circuit wiring board (7). The plate (1) mounted with the power source (4) is attached to the rear surface of the board (7) through the pin terminals (5). Therefore, an integrated circuit device such that the degree of integration is improved and heat radiating parts have excellent heat radiating properties is provided.
Abstract:
Interconnection elements (752) and/or tip structures (770) for interconnection elements (752) may first be fabricated upon sacrificial substrates (702) for subsequent mounting to electronic components (784). In this manner, the electronic components (784) are not 'at risk' during the fabrication process. The sacrificial substrate (702) establishes a predetermined spatial relationship between the interconnection elements (752) which may be composite interconnection elements (752) having a relatively soft elongate element (752) as a core and a relatively hard (springy material) overcoat (754). Interconnection elements (752) may be fabricated upon tip structures (770), or may first be mounted to the electronic component (784) and the tip structures (770) joined to the free-ends of the interconnection elements (752). Tip structures (770) formed as cantilever beams are described.
Abstract:
Interconnection elements (752) and/or tip structures (770) for interconnection elements (752) may first be fabricated upon sacrificial substrates (702) for subsequent mounting to electronic components (784). In this manner, the electronic components (784) are not 'at risk' during the fabrication process. The sacrificial substrate (702) establishes a predetermined spatial relationship between the interconnection elements (752) which may be composite interconnection elements (752) having a relatively soft elongate element (752) as a core and a relatively hard (springy material) overcoat (754). Interconnection elements (752) may be fabricated upon tip structures (770), or may first be mounted to the electronic component (784) and the tip structures (770) joined to the free-ends of the interconnection elements (752). Tip structures (770) formed as cantilever beams are described.