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公开(公告)号:JP6324738B2
公开(公告)日:2018-05-16
申请号:JP2014012155
申请日:2014-01-27
申请人: ルネサスエレクトロニクス株式会社
CPC分类号: H01L23/49822 , H01L23/49811 , H01L23/49816 , H01L23/49827 , H01L23/49838 , H01L23/5225 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L2224/0401 , H01L2224/05082 , H01L2224/05083 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05644 , H01L2224/05655 , H01L2224/131 , H01L2224/13147 , H01L2224/13155 , H01L2224/14131 , H01L2224/14135 , H01L2224/16057 , H01L2224/16113 , H01L2224/16225 , H01L2224/16227 , H01L2224/2919 , H01L2224/32225 , H01L2224/73204 , H01L2224/81815 , H01L2224/83104 , H01L2924/1517 , H01L2924/15311 , H05K1/0225 , H05K1/0253 , H05K2201/09336 , H05K2201/09681 , H01L2924/014 , H01L2924/00014 , H01L2924/00
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公开(公告)号:JP6300236B2
公开(公告)日:2018-03-28
申请号:JP2015036099
申请日:2015-02-26
申请人: 株式会社日立製作所 , 株式会社 日立パワーデバイス
IPC分类号: H01L21/329 , H01L29/868 , H01L29/861 , H01L25/07 , H01L25/18 , H01L25/065 , H01L21/52 , H02M7/5387 , H01L21/28
CPC分类号: H02M7/537 , H01L21/283 , H01L21/78 , H01L23/4827 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L25/16 , H01L25/50 , H01L29/45 , H01L2224/0345 , H01L2224/03462 , H01L2224/039 , H01L2224/03901 , H01L2224/0401 , H01L2224/04026 , H01L2224/05083 , H01L2224/05124 , H01L2224/05166 , H01L2224/05558 , H01L2224/05624 , H01L2224/05655 , H01L2224/06181 , H01L2224/13022 , H01L2224/13387 , H01L2224/1403 , H01L2224/14131 , H01L2224/14135 , H01L2224/14154 , H01L2224/14177 , H01L2224/16145 , H01L2224/16238 , H01L2224/29147 , H01L2224/29387 , H01L2224/32227 , H01L2224/32245 , H01L2224/33181 , H01L2224/81447 , H01L2224/8184 , H01L2224/83065 , H01L2224/83203 , H01L2224/83447 , H01L2224/8384 , H01L2224/92 , H01L2224/94 , H01L2225/06513 , H01L2225/06517 , H01L2924/01013 , H01L2924/1203 , H01L2924/13055 , H01L2924/3511 , H02M7/003 , H01L2924/00014 , H01L2924/01014 , H01L2224/03 , H01L2924/0541 , H01L2924/01029 , H01L2924/00012 , H01L2224/1413 , H01L2224/1415 , H01L2224/03464 , H01L21/304 , H01L21/22
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公开(公告)号:JP2015146379A
公开(公告)日:2015-08-13
申请号:JP2014018532
申请日:2014-02-03
申请人: デクセリアルズ株式会社
IPC分类号: H01L21/60
CPC分类号: H01L24/83 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L2224/13019 , H01L2224/13082 , H01L2224/13144 , H01L2224/13147 , H01L2224/13644 , H01L2224/13647 , H01L2224/14131 , H01L2224/14133 , H01L2224/14135 , H01L2224/16225 , H01L2224/27003 , H01L2224/27334 , H01L2224/2929 , H01L2224/29293 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/2936 , H01L2224/29387 , H01L2224/29388 , H01L2224/2939 , H01L2224/294 , H01L2224/32225 , H01L2224/73204 , H01L2224/8113 , H01L2224/81132 , H01L2224/81191 , H01L2224/81385 , H01L2224/81395 , H01L2224/81488 , H01L2224/81903 , H01L2224/83101 , H01L2224/8313 , H01L2224/83132 , H01L2224/83192 , H01L2224/83203 , H01L2224/83499 , H01L2224/83851 , H01L2224/83862 , H01L2224/83874 , H01L2924/381
摘要: 【課題】導電性粒子が基板電極と電極端子の段部間に咬みこまれても、基板電極及び電極端子の各主面部に挟持されている導電性粒子を十分に押し込み、導通性を確保する。 【解決手段】回路基板12に異方性導電接着剤1を介して電子部品18が接続され、回路基板12の基板電極17a及び電子部品18の電極端子19には、各側縁部に互いに付き合わされる段部27,28が形成され、基板電極17a及び電極端子19は各主面部間及び段部27,28間に導電性粒子4が挟持され、導電性粒子4と段部27,28とが、(1)a+b+c≦0.8Dを満たす。 [a:接続電極の段部高さ、b:基板電極の段部高さ、c:段部間ギャップ、D:導電性粒子の径] 【選択図】図2
摘要翻译: 要解决的问题:为了通过将由基板电极和电极端子的每个主表面保持的导电颗粒推压到足以即使导电颗粒被咬在基板电极和电极端子的步骤之间也可以充分确保导电性。 电子部件18通过各向异性导电性粘接剂1与电路基板12连接,在电路基板12的基板电极17a和电子基板12的电极端子19上形成与各侧缘抵接的台阶27,28 基板电极17a和电极端子19将导电颗粒4保持在相应的主表面之间并且在台阶27,28之间,并且导电颗粒4和台阶27,28之间满足关系式(1)a + b + c ≤0.8D。 (a:连接电极的台阶高度,b:基板电极的台阶高度,c:台阶之间的间隙,D:导电粒子的直径)。
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公开(公告)号:JP5446867B2
公开(公告)日:2014-03-19
申请号:JP2009537021
申请日:2008-10-09
申请人: 日本電気株式会社
发明人: 俊亘 小勝
CPC分类号: H01L21/563 , H01L24/03 , H01L24/05 , H01L24/81 , H01L24/83 , H01L2224/03416 , H01L2224/03418 , H01L2224/03422 , H01L2224/035 , H01L2224/0401 , H01L2224/04026 , H01L2224/05555 , H01L2224/05688 , H01L2224/131 , H01L2224/14135 , H01L2224/16225 , H01L2224/2919 , H01L2224/32225 , H01L2224/73204 , H01L2224/81815 , H01L2224/83009 , H01L2224/83102 , H01L2224/83385 , H01L2224/83487 , H01L2224/92125 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/0102 , H01L2924/01033 , H01L2924/0105 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/05341 , H01L2924/01014 , H01L2924/00 , H01L2924/00014
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公开(公告)号:JP2014049592A
公开(公告)日:2014-03-17
申请号:JP2012190993
申请日:2012-08-31
IPC分类号: H01L25/18 , H01L25/065 , H01L25/07
CPC分类号: H01L21/50 , H01L21/56 , H01L21/561 , H01L21/563 , H01L21/6836 , H01L23/3128 , H01L23/49833 , H01L23/5283 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/19 , H01L24/20 , H01L24/27 , H01L24/32 , H01L24/33 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/94 , H01L24/95 , H01L24/96 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2221/68327 , H01L2224/0401 , H01L2224/04105 , H01L2224/05023 , H01L2224/05025 , H01L2224/05073 , H01L2224/05147 , H01L2224/0557 , H01L2224/05611 , H01L2224/05655 , H01L2224/12105 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/14131 , H01L2224/14135 , H01L2224/14136 , H01L2224/14181 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/17181 , H01L2224/214 , H01L2224/215 , H01L2224/2731 , H01L2224/27334 , H01L2224/32145 , H01L2224/32225 , H01L2224/33181 , H01L2224/73104 , H01L2224/73204 , H01L2224/73253 , H01L2224/73259 , H01L2224/81191 , H01L2224/81447 , H01L2224/81801 , H01L2224/82105 , H01L2224/82106 , H01L2224/83104 , H01L2224/83191 , H01L2224/83192 , H01L2224/83862 , H01L2224/92224 , H01L2224/92242 , H01L2224/92244 , H01L2224/94 , H01L2224/95 , H01L2224/96 , H01L2224/97 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06544 , H01L2225/06568 , H01L2225/06586 , H01L2924/00014 , H01L2924/12042 , H01L2924/13091 , H01L2924/15311 , H01L2924/15313 , H01L2924/181 , H01L2924/3511 , H01L2924/00012 , H01L2224/83 , H01L2924/00 , H01L2924/014 , H01L2924/01047 , H01L2224/27 , H01L2224/81 , H01L2924/01029 , H01L2224/19 , H01L2224/05552
摘要: PROBLEM TO BE SOLVED: To prevent an excess stress from being applied to a connection part of two semiconductor chips in a semiconductor device in which a chip laminate including a small-diameter semiconductor chip and a large-diameter semiconductor chip is mounted on a top face of a base material.SOLUTION: In a semiconductor device manufacturing method, by mounting a large-diameter first semiconductor chip on a support substrate and subsequently mounting a small-diameter second semiconductor chip on the first semiconductor chip, since a tilt and slip of the second semiconductor chip mounted on the first semiconductor chip can be inhibited, an excess stress can be inhibited from being applied to a connection part of the first semiconductor chip and the second semiconductor chip.
摘要翻译: 要解决的问题:为了防止在将包括小直径半导体芯片和大直径半导体芯片的芯片层叠体安装在顶面上的半导体器件中的两个半导体芯片的连接部分上施加过量的应力 。在半导体器件制造方法中,通过将大直径第一半导体芯片安装在支撑基板上,随后将小直径第二半导体芯片安装在第一半导体芯片上,由于倾斜和滑动 可以抑制安装在第一半导体芯片上的第二半导体芯片,可以抑制过多的应力施加到第一半导体芯片和第二半导体芯片的连接部分。
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公开(公告)号:JP5186344B2
公开(公告)日:2013-04-17
申请号:JP2008306240
申请日:2008-12-01
申请人: パナソニック株式会社
IPC分类号: H01L21/60 , G01R31/28 , H01L21/3205 , H01L21/768 , H01L21/822 , H01L23/522 , H01L27/04
CPC分类号: H01L21/563 , G01R31/2884 , H01L22/32 , H01L24/06 , H01L24/13 , H01L24/14 , H01L2224/0401 , H01L2224/05012 , H01L2224/05014 , H01L2224/05022 , H01L2224/05124 , H01L2224/05572 , H01L2224/05655 , H01L2224/0603 , H01L2224/06051 , H01L2224/06135 , H01L2224/06155 , H01L2224/06177 , H01L2224/06179 , H01L2224/06515 , H01L2224/131 , H01L2224/13144 , H01L2224/1403 , H01L2224/14135 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/81801 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/351 , H01L2924/00014 , H01L2924/01014 , H01L2924/00 , H01L2224/05552
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7.Semiconductor sensor device and method of manufacturing thereof, package and method of manufacturing thereof, module and method of manufacturing thereof, and electronic device 审中-公开
标题翻译: 半导体传感器装置及其制造方法,其制造方法及其制造方法,其制造方法及其制造方法及电子设备公开(公告)号:JP2010199148A
公开(公告)日:2010-09-09
申请号:JP2009039571
申请日:2009-02-23
申请人: Fujikura Ltd , 株式会社フジクラ
发明人: YAMAMOTO SATOSHI
CPC分类号: G01L1/18 , G01P1/023 , H01L23/057 , H01L23/525 , H01L24/02 , H01L24/16 , H01L2224/0236 , H01L2224/02375 , H01L2224/02379 , H01L2224/0239 , H01L2224/0401 , H01L2224/13022 , H01L2224/131 , H01L2224/13111 , H01L2224/13562 , H01L2224/14131 , H01L2224/14135 , H01L2224/73207 , H01L2924/0001 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01076 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/1461 , H01L2924/351 , H01L2924/00014 , H01L2224/13099 , H01L2924/00
摘要: PROBLEM TO BE SOLVED: To provide a semiconductor sensor device which has high connection reliability without the use of an underfill material and has a repairable configuration, for lower cost and reduced load on environment. SOLUTION: The semiconductor sensor device 1 includes a semiconductor sensor chip 11 equipped at least with a sensor circuit formed on a first substrate 21; a first conductive part 23 connected electrically to the sensor circuit; and a first rewiring layer 25 electrically connected to the first conductive part, as well as, a semiconductor chip 12, equipped at least with a process circuit which is formed on a second substrate 31 to process an electrical signal from the sensor circuit; a second conductive part 33 electrically connected to the process circuit and a second rewiring layer 35 electrically connected to the second conductive part. In the semiconductor sensor device, the first rewiring layer and the second rewiring layer are electrically connected via a conductive connection member 13, and the thickness of the first rewiring layer and/or the second rewiring layer is 8-20 μm. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译: 要解决的问题:提供一种具有高连接可靠性而不使用底部填充材料并且具有可修复构造的半导体传感器装置,用于降低成本并降低对环境的负担。 解决方案:半导体传感器装置1包括至少配备有形成在第一基板21上的传感器电路的半导体传感器芯片11; 与传感器电路电连接的第一导电部23; 以及电连接到第一导电部分的第一再布线层25以及至少配备有处理电路的半导体芯片12,半导体芯片12形成在第二基板31上以处理来自传感器电路的电信号; 电连接到处理电路的第二导电部分33和与第二导电部分电连接的第二重新布线层35。 在半导体传感器装置中,第一再布线层和第二再布线层经由导电连接部件13电连接,第一再布线层和/或第二再布线层的厚度为8〜20μm。 版权所有(C)2010,JPO&INPIT
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公开(公告)号:JP2005236262A
公开(公告)日:2005-09-02
申请号:JP2004334198
申请日:2004-11-18
IPC分类号: H01L23/12 , H01L21/56 , H01L21/60 , H01L23/31 , H01L23/485 , H01L23/498 , H01L29/40
CPC分类号: H01L24/13 , H01L23/3114 , H01L23/49816 , H01L23/49838 , H01L24/06 , H01L24/14 , H01L2224/02122 , H01L2224/0401 , H01L2224/05017 , H01L2224/05552 , H01L2224/05557 , H01L2224/05558 , H01L2224/05571 , H01L2224/06051 , H01L2224/06131 , H01L2224/06135 , H01L2224/06136 , H01L2224/0614 , H01L2224/06141 , H01L2224/06177 , H01L2224/06179 , H01L2224/13006 , H01L2224/13012 , H01L2224/13014 , H01L2224/13015 , H01L2224/13018 , H01L2224/13099 , H01L2224/131 , H01L2224/14051 , H01L2224/14131 , H01L2224/14135 , H01L2224/14136 , H01L2224/1414 , H01L2224/14141 , H01L2224/14177 , H01L2224/14179 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/351 , H01L2924/00012 , H01L2924/00014 , H01L2924/00 , H01L2224/81805
摘要: PROBLEM TO BE SOLVED: To enhance a bonding force between a land part and an external terminal, securely prevent omission, and secure reliability to connection over a long period of time.
SOLUTION: An insulating resin layer 4 insulating the space between metal wiring 7a is formed on a semiconductor element 1, and the end of the metal wiring is connected with an electrode 2 on the semiconductor element. The other end of the metal wiring is connected with the external terminal 9 as a land, and a semiconductor device is covered with a surface resin layer 8 except the connecting part of the land. On the upper surface of at least one land part 7b of the lands, a projection 10 is provided. Thereby, the external terminal complements the projection of the land part from the circumference at the time of solder bonding so as to make the connection between the external terminal and the land part secure. Consequently, a semiconductor device securing the reliability to connection over a long period of time can be obtained.
COPYRIGHT: (C)2005,JPO&NCIPI摘要翻译: 要解决的问题:为了增强陆部和外部端子之间的结合力,可靠地防止遗漏,并且确保长时间连接的可靠性。 解决方案:在半导体元件1上形成绝缘金属布线7a之间的绝缘树脂层4,并且金属布线的端部与半导体元件上的电极2连接。 金属布线的另一端与外部端子9连接,并且半导体器件被除了焊盘的连接部分之外的表面树脂层8覆盖。 在平台的至少一个陆部7b的上表面上设置突起10。 由此,外部端子在焊接时与外围部分的圆周的突起互补,从而使外部端子与焊盘部之间的连接牢固。 因此,可以获得确保长时间连接的可靠性的半导体装置。 版权所有(C)2005,JPO&NCIPI
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公开(公告)号:JP6142800B2
公开(公告)日:2017-06-07
申请号:JP2013557394
申请日:2013-01-11
申请人: パナソニック株式会社
IPC分类号: H01L25/07 , H01L25/18 , H01L25/065
CPC分类号: H01L24/01 , H01L21/568 , H01L21/82 , H01L23/3114 , H01L23/3185 , H01L24/19 , H01L24/80 , H01L24/92 , H01L24/94 , H01L24/96 , H01L24/97 , H01L25/0657 , H01L2224/02379 , H01L2224/02381 , H01L2224/0401 , H01L2224/04105 , H01L2224/05548 , H01L2224/12105 , H01L2224/13005 , H01L2224/13025 , H01L2224/14131 , H01L2224/14135 , H01L2224/16145 , H01L2224/16225 , H01L2224/16238 , H01L2224/32145 , H01L2224/73204 , H01L2224/73259 , H01L2224/83104 , H01L2224/9202 , H01L2224/92224 , H01L2224/93 , H01L2224/94 , H01L2224/96 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2225/06568 , H01L23/481 , H01L2924/15311
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公开(公告)号:JP5951156B2
公开(公告)日:2016-07-13
申请号:JP2016507321
申请日:2014-03-26
申请人: 三菱電機株式会社
IPC分类号: H01L21/3205 , H01L21/768 , H01L23/522 , H01L23/12 , H01L21/60
CPC分类号: H01L24/02 , H01L23/50 , H01L23/66 , H01L24/14 , H01L2224/02331 , H01L2224/02371 , H01L2224/02372 , H01L2224/02375 , H01L2224/02377 , H01L2224/02379 , H01L2224/02381 , H01L2224/0401 , H01L2224/05569 , H01L2224/13024 , H01L2224/14131 , H01L2224/14133 , H01L2224/14135 , H01L2224/14136 , H01L2224/14156 , H01L2224/14177 , H01L2224/14515 , H01L2224/16227 , H01L23/481 , H01L23/49838 , H01L23/5283 , H01L24/05 , H01L24/13 , H05K1/0243 , H05K2201/10674
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