公开(公告)号：US20240093089A1

公开(公告)日：2024-03-21

申请号：US18519571

申请日：2023-11-27

Applicant: BASF SE

Inventor： Joannes Theodorus Valentinus HOOGBOOM ,  Jhih Jheng KE ,  Che Wei WANG ,  Andreas KLIPP ,  Yi Ping CHENG

IPC: C09K13/00 ,  C07D265/30 ,  C23F1/20 ,  C23F1/44 ,  H01L21/311

CPC classification number: C09K13/00 ,  C07D265/30 ,  C23F1/20 ,  C23F1/44 ,  H01L21/31111

Abstract: A composition for selectively etching a layer including an aluminum compound in the presence of a layer of a low-k material and/or a layer including copper and/or cobalt, and a corresponding process, are described. Further described is a process for the manufacture of a semiconductor device, including the step of selectively etching at least one layer including an aluminum compound in the presence of a layer of a low-k material and/or a layer including copper and/or cobalt by contacting the at least one layer including an aluminum compound with the described composition.

公开(公告)号：US11920073B2

公开(公告)日：2024-03-05

申请号：US17486963

申请日：2021-09-28

Applicant: PHICHEM CORPORATION

Inventor： Xiaoyi Gao ,  Hangjian Hu

IPC: C09K13/06 ,  C09K13/00 ,  C09K13/04 ,  C09K13/08 ,  C09K13/10 ,  C23F1/16 ,  C23F1/44 ,  H01L21/3213

CPC classification number: C09K13/06 ,  C09K13/00 ,  C09K13/04 ,  C09K13/08 ,  C09K13/10 ,  C23F1/16 ,  C23F1/44 ,  H01L21/32134

Abstract: The present disclosure discloses an etching composition. The etching composition includes: a component A: oxidizing agent 1-30 wt %; a component B: inorganic acid 0.5-20 wt %; a component C: organic acid 0-15 wt %; a component D: chelating agent 0.01-15 wt %; a component E: ionic compound and/or other inorganic acids except the inorganic acid in the component B 0-0.1 wt %; and deionized water.

公开(公告)号：US09896765B2

公开(公告)日：2018-02-20

申请号：US15112205

申请日：2015-01-14

Applicant: Atotech Deutschland GmbH

Inventor： Boris Alexander Janssen ,  Donny Lautan

IPC: B05D3/10 ,  C23C18/32 ,  C23C18/18 ,  C23C18/16 ,  C23C18/50 ,  C23F1/30 ,  C23F1/02 ,  C23F1/44 ,  H05K3/26 ,  H05K3/18 ,  H05K3/24 ,  C23C18/42

CPC classification number: C23C18/32 ,  C23C18/1608 ,  C23C18/1841 ,  C23C18/42 ,  C23C18/50 ,  C23F1/02 ,  C23F1/30 ,  C23F1/44 ,  H05K3/187 ,  H05K3/244 ,  H05K3/26

Abstract: The present invention discloses a process for electroless plating of a metal or metal alloy onto copper features of an electronic device such as a printed circuit board which suppresses undesired skip plating and extraneous plating. The process comprises the steps i) providing such a substrate, ii) activating of the copper features with noble metal ions; iii) removing excessive noble metal ions or precipitates formed thereof with an aqueous pre-treatment composition comprising an acid, a source for halide ions and an additive selected from the group consisting of thiourea, thiourea derivatives and polymers comprising thiourea groups, and iv) electroless plating of a metal or metal alloy layer.

公开(公告)号：US20180044801A1

公开(公告)日：2018-02-15

申请号：US15550752

申请日：2016-01-21

Applicant: MEC COMPANY LTD.

Inventor： Yuki Ogino ,  Mami Tojima ,  Masahiro Hayashizaki ,  Minoru Otani

IPC: C23F1/26 ,  C23F1/44

CPC classification number: C23F1/26 ,  C23F1/44 ,  H01L21/32133 ,  H05K3/108

Abstract: An object of the present invention is to provide: an etching liquid which is capable of etching titanium selectively in the presence of copper, and is further low in toxicity and excellent in storage stability; and an etching method using this etching liquid. The etching liquid of the present invention which is a liquid includes at least one acid selected from the group consisting of sulfuric acid, hydrochloric acid, and trichloroacetic acid, and at least one organic sulfur compound selected from the group consisting of a thioketone compound and a thioether compound, and makes it possible to etch titanium selectively in the presence of copper.

公开(公告)号：US09790600B2

公开(公告)日：2017-10-17

申请号：US14929803

申请日：2015-11-02

Applicant: Entegris, Inc.

Inventor： Tsutomu Kojima ,  Yukichi Koji

IPC: H01L21/302 ,  C23F1/18 ,  H01L21/3213 ,  C23F1/34 ,  C23F1/44 ,  H01L23/00 ,  H01L21/768 ,  H01L23/48

CPC classification number: C23F1/18 ,  C23F1/34 ,  C23F1/44 ,  H01L21/32134 ,  H01L21/76865 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03614 ,  H01L2224/03826 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/13009 ,  H01L2224/13083 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00014 ,  H01L2924/12044 ,  H01L2924/1461 ,  H01L2924/01079 ,  H01L2924/00 ,  H01L2224/05552

Abstract: Object is to provide an etching solution which generates less foam and can etch copper or copper alloy at high selectivity when used in a step of etching copper or 5 copper alloy in an electronic substrate having both of copper or copper alloy and nickel. The etching solution to be used in a step of selectively etching copper or copper alloy in an electronic substrate having both of copper or copper alloy and nickel has, as essential components thereof, (A) a linear alkanolamine, (B) a chelating agent having an acid group in the molecule thereof, and (C) hydrogen peroxide.

公开(公告)号：US20170173933A1

公开(公告)日：2017-06-22

申请号：US15223505

申请日：2016-07-29

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Yong Hee KIM ,  Sang-Don JUNG

IPC: B32B37/12 ,  B32B38/10 ,  C25D3/56 ,  B32B37/26 ,  C23F1/02 ,  B32B37/14

CPC classification number: C23F1/02 ,  C23F1/00 ,  C23F1/18 ,  C23F1/44 ,  C25D3/56 ,  C25D3/62 ,  C25D3/64 ,  C25D5/48

Abstract: A method for adhering a metal layer and a polymer layer includes forming a metal layer, forming a nanoporous metal structure on the metal layer, and compressing a polymer layer on the nanoporous metal structure such that a polymer is infiltrated into the nanoporous metal structure.

公开(公告)号：US09644274B2

公开(公告)日：2017-05-09

申请号：US14130779

申请日：2012-06-28

Applicant: Satoshi Tamai ,  Kunio Yube ,  Satoshi Okabe

Inventor： Satoshi Tamai ,  Kunio Yube ,  Satoshi Okabe

IPC: C03C15/00 ,  C23F1/18 ,  C23F1/26 ,  H01L21/3213 ,  C23F1/44 ,  C09K13/04 ,  H05K3/06 ,  C23F1/16

CPC classification number: C23F1/18 ,  C09K13/04 ,  C23F1/16 ,  C23F1/26 ,  C23F1/44 ,  H01L21/32134 ,  H05K3/067 ,  H05K2201/0338

Abstract: The present invention relates to an etching solution for copper or a compound comprised mainly of copper, wherein the etching solution contains (A) a maleic acid ion source and (B) a copper ion source, and an etching method using the etching solution.

公开(公告)号：US20160322608A1

公开(公告)日：2016-11-03

申请号：US15211444

申请日：2016-07-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yusuke Nishido

IPC: H01L51/52 ,  H01L51/56 ,  C23F1/12

CPC classification number: H01L51/5281 ,  C23F1/02 ,  C23F1/12 ,  C23F1/44 ,  H01L21/0332 ,  H01L21/0337 ,  H01L33/52 ,  H01L51/52 ,  H01L51/524 ,  H01L51/5246 ,  H01L51/56 ,  Y10T428/24355

Abstract: A novel method for forming projections and depressions is provided. A novel sealing structure is provided. A novel light-emitting device is provided. A first step of forming a film containing at least two kinds of metals having different etching rates over a surface; a second step of heating the film so that the metal having a lower etching rate segregates; a third step of selectively etching the metal having a higher etching rate; and a fourth step of selectively etching the surface using a residue containing the metal having a lower etching rate are included.

Abstract translation: 提供了一种形成凹凸的新方法。 提供了一种新颖的密封结构。 提供了一种新颖的发光装置。 在表面上形成含有至少两种具有不同蚀刻速率的金属的膜的第一步骤; 第二步骤是加热薄膜以使蚀刻速率较低的金属分离; 选择性蚀刻具有较高蚀刻速率的金属的第三步骤; 并且包括使用含有具有较低蚀刻速率的金属的残渣来选择性地蚀刻表面的第四步骤。

公开(公告)号：US09466508B2

公开(公告)日：2016-10-11

申请号：US14763891

申请日：2014-04-09

Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.

Inventor： Satoshi Tamai ,  Kunio Yube

IPC: H01L21/4763 ,  C09K13/00 ,  H01L21/3213 ,  C23F1/02 ,  C23F1/18 ,  C23F1/26 ,  C23F1/44 ,  H05K3/06 ,  H01L27/12

CPC classification number: H01L21/47635 ,  C09K13/00 ,  C23F1/02 ,  C23F1/18 ,  C23F1/26 ,  C23F1/44 ,  H01L21/32134 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1259 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869 ,  H05K3/067 ,  H05K2201/0338

Abstract: The present invention provides a liquid composition used for etching a multilayer film containing copper and molybdenum, an etching method for etching a multilayer film containing copper and molybdenum, and a substrate. The present invention further provides a liquid composition for etching a multilayer-film wiring substrate which has an oxide layer (IGZO) including indium, gallium and zinc laminated on the substrate, and further a multilayer film including at least a layer containing molybdenum and a layer containing copper provided thereon, a method for etching a multilayer film containing copper and molybdenum from the substrate, and a substrate. According to the present invention, a liquid composition comprising (A) a maleic acid ion source, (B) a copper ion source, and (C) at least one type of amine compound selected from the group consisting of 1-amino-2-propanol, 2-(methylamino)ethanol, 2-(ethylamino)ethanol, 2-(butylamino)ethanol, 2-(dimethylamino)ethanol, 2-(diethylamino)ethanol, 2-methoxyethylamine, 3-methoxypropylamine, 3-amino-1-propanol, 2-amino-2-methyl-1-propanol, 1-dimethylamino-2-propanol, 2-(2-aminoethoxyl)ethanol, morpholine and 4-(2-hydroxyethyl)morpholine and having a pH value of 4-9 is used.

Abstract translation: 本发明提供用于蚀刻含有铜和钼的多层膜的液体组合物，蚀刻含有铜和钼的多层膜的蚀刻方法以及基板。 本发明还提供了一种用于蚀刻多层膜布线基板的液体组合物，该多层膜布线基板具有层叠在基板上的包含铟，镓和锌的氧化物层（IGZO），还包括至少包含含钼层和层 含有铜的铜，从基板上蚀刻含有铜和钼的多层膜的方法以及基板。 根据本发明，一种液体组合物，其包含（A）马来酸离子源，（B）铜离子源和（C）至少一种选自以下的胺化合物：1-氨基-2- 丙醇，2-（甲基氨基）乙醇，2-（乙基氨基）乙醇，2-（丁基氨基）乙醇，2-（二甲基氨基）乙醇，2-（二乙基氨基）乙醇，2-甲氧基乙胺，3-甲氧基丙胺，3-氨基-1 丙醇，2-氨基-2-甲基-1-丙醇，1-二甲基氨基-2-丙醇，2-（2-氨基乙氧基）乙醇，吗啉和4-（2-羟乙基）吗啉，pH值为4- 使用9。

公开(公告)号：US09394614B2

公开(公告)日：2016-07-19

申请号：US14254066

申请日：2014-04-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yusuke Nishido

IPC: H01L21/033 ,  C23F1/02 ,  C23F1/12 ,  C23F1/44 ,  H01L51/52

CPC classification number: H01L51/5281 ,  C23F1/02 ,  C23F1/12 ,  C23F1/44 ,  H01L21/0332 ,  H01L21/0337 ,  H01L33/52 ,  H01L51/52 ,  H01L51/524 ,  H01L51/5246 ,  H01L51/56 ,  Y10T428/24355

Abstract: A novel method for forming projections and depressions is provided. A novel sealing structure is provided. A novel light-emitting device is provided. A first step of forming a film containing at least two kinds of metals having different etching rates over a surface; a second step of heating the film so that the metal having a lower etching rate segregates; a third step of selectively etching the metal having a higher etching rate; and a fourth step of selectively etching the surface using a residue containing the metal having a lower etching rate are included.

Abstract translation: 提供了一种形成凹凸的新方法。 提供了一种新颖的密封结构。 提供了一种新颖的发光装置。 在表面上形成含有至少两种具有不同蚀刻速率的金属的膜的第一步骤; 第二步骤是加热薄膜以使蚀刻速率较低的金属分离; 选择性蚀刻具有较高蚀刻速率的金属的第三步骤; 并且包括使用含有具有较低蚀刻速率的金属的残渣来选择性地蚀刻表面的第四步骤。