公开(公告)号：US20080191192A1

公开(公告)日：2008-08-14

申请号：US12030117

申请日：2008-02-12

申请人： Daniel F. Feezell ,  Matthew C. Schmidt ,  Kwang Choong Kim ,  Robert M. Farrell ,  Daniel A. Cohen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Daniel F. Feezell ,  Matthew C. Schmidt ,  Kwang Choong Kim ,  Robert M. Farrell ,  Daniel A. Cohen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/16 ,  H01S5/3211 ,  H01S5/34333

摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.

摘要翻译： 一种用于制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。 由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。

公开(公告)号：US20080177200A1

公开(公告)日：2008-07-24

申请号：US12018337

申请日：2008-01-23

申请人： Susumu IKEHARA ,  Hiroshi Shirafuji ,  Shuji Nakamura ,  Nobuo Shimoda ,  Katsuyuki Sado

发明人： Susumu IKEHARA ,  Hiroshi Shirafuji ,  Shuji Nakamura ,  Nobuo Shimoda ,  Katsuyuki Sado

IPC分类号： A61B10/02

CPC分类号： A61B10/025 ,  A61B17/1617 ,  A61B17/1633 ,  A61B17/1635 ,  A61B17/17 ,  A61B2010/0258

摘要： The bone marrow harvesting drill of the invention includes an inner needle having a cutting edge at the tip thereof; a tubular mantle that receives the inner needle thereinto so that the inner needle and the tubular mantle are detachably attached; and a lock mechanism that prevents the axial rotation of the tubular mantle and the inner needle relative to each other; the inner needle having a groove formed at the tip thereof projecting from the tubular mantle for discharging bone scraps produced by the cutting edge at the tip of the inner needle; and the tubular mantle having a cutting edge formed at the tip edge thereof and a helical groove extending from the tip edge to at least part of the peripheral surface of the tubular mantle so as to be flush with the groove of the inner needle.

摘要翻译： 本发明的骨髓采集钻头包括在其顶端具有切割边缘的内针; 将内针容纳在其中的管状罩体，使得内针和管状罩可拆卸地安装; 以及防止管状罩和内针相对于彼此的轴向旋转的锁定机构; 所述内针具有形成在其尖端处的从所述管状罩突出的槽，用于排出由所述内针的尖端处的所述切割刃产生的骨屑; 并且所述管状壁具有形成在其前端缘处的切削刃，以及螺旋槽，其从所述前端边缘延伸到所述管状套管的周面的至少一部分，以与所述内针的槽齐平。

公开(公告)号：US07375383B2

公开(公告)日：2008-05-20

申请号：US11714890

申请日：2007-03-07

申请人： Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

发明人： Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

IPC分类号： H01L29/22 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L31/1884 ,  H01L33/32 ,  H01L33/325 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2933/0016 ,  Y02E10/50 ,  H01L2924/00014 ,  H01L2924/00

摘要： A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

摘要翻译： 基于氮化镓的III-V族化合物半导体器件具有设置在衬底上的氮化镓基III-V族化合物半导体层和与半导体层接触的欧姆电极。 欧姆电极由金属材料形成，并被退火。

公开(公告)号：US07332365B2

公开(公告)日：2008-02-19

申请号：US10848937

申请日：2004-05-18

申请人： Shuji Nakamura ,  Steven DenBaars ,  John Edmond ,  Chuck Swoboda ,  Umesh Mishra

发明人： Shuji Nakamura ,  Steven DenBaars ,  John Edmond ,  Chuck Swoboda ,  Umesh Mishra

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/465 ,  H01L33/0079 ,  H01L33/105 ,  H01L33/145 ,  H01L33/32 ,  H01L33/38 ,  H01L2933/0016

摘要： A method according to the present invention for fabricating high light extraction photonic devices comprising growing an epitaxial semiconductor structure on a substrate and depositing a first mirror layer on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first mirror layer and the substrate. Flip-chip mounting the epitaxial semiconductor structure, with its first mirror and substrate on a submount such that the epitaxial semiconductor device structure is sandwiched between the submount and substrate. The substrate is then removed from the epitaxial structure by introducing an etch environment to the substrate. A second mirror layer is deposited on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first and second mirror layers. A device according to the present invention comprising a resonant cavity light emitting diode (RCLED) mounted to a submount.

摘要翻译： 根据本发明的用于制造高光提取光子器件的方法，包括在衬底上生长外延半导体结构并在外延半导体结构上沉积第一镜面层，使得外延半导体结构夹在第一镜面层和衬底之间 。 倒装芯片安装外延半导体结构，其第一反射镜和衬底位于基座上，使得外延半导体器件结构夹在基座和衬底之间。 然后通过向衬底引入蚀刻环境，从衬底去除衬底。 第二镜层沉积在外延半导体结构上，使得外延半导体结构夹在第一和第二镜层之间。 根据本发明的装置包括安装到底座的谐振腔发光二极管（RCLED）。

公开(公告)号：US20070190758A1

公开(公告)日：2007-08-16

申请号：US11673426

申请日：2007-02-09

申请人： John Kaeding ,  Hitoshi Sato ,  Michael Iza ,  Hirokuni Asamizu ,  Hong Zhong ,  Steven DenBaars ,  Shuji Nakamura

发明人： John Kaeding ,  Hitoshi Sato ,  Michael Iza ,  Hirokuni Asamizu ,  Hong Zhong ,  Steven DenBaars ,  Shuji Nakamura

IPC分类号： H01L21/04 ,  H01L29/15

CPC分类号： H01L21/2654 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/207

摘要： A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.

摘要翻译： （Al，In，Ga，B）N半导体晶体中受控p型导电性的方法。 实例包括在{011}方向沉积在{100} MgAl 2+ 4+尖晶石衬底上的{10 11} GaN膜。 可以有意地将Mg原子并入生长的半极性氮化物薄膜中以在半导体晶体的带结构中引入可用的电子态，导致p型导电性。 也可以使用导致类似的合适电子状态引入的其它杂质原子，例如Zn或C。

公开(公告)号：US20070184637A1

公开(公告)日：2007-08-09

申请号：US11697457

申请日：2007-04-06

申请人： Benjamin Haskell ,  Melvin McLaurin ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

发明人： Benjamin Haskell ,  Melvin McLaurin ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/0242 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02639 ,  H01L21/02647

摘要： A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.

摘要翻译： 生长高度平面，完全透明和镜面的m面氮化镓（GaN）膜的方法。 该方法通过侧向过度生长技术显着降低结构缺陷密度。 制造高品质，均匀，厚的m面GaN膜用作无极化器件生长的衬底。

公开(公告)号：US20070178689A1

公开(公告)日：2007-08-02

申请号：US11714890

申请日：2007-03-07

申请人： Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

发明人： Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

IPC分类号： H01L21/44

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L31/1884 ,  H01L33/32 ,  H01L33/325 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2933/0016 ,  Y02E10/50 ,  H01L2924/00014 ,  H01L2924/00

摘要： A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

摘要翻译： 基于氮化镓的III-V族化合物半导体器件具有设置在衬底上的氮化镓基III-V族化合物半导体层和与半导体层接触的欧姆电极。 欧姆电极由金属材料形成，并被退火。

公开(公告)号：US20070121690A1

公开(公告)日：2007-05-31

申请号：US10581940

申请日：2003-12-09

申请人： Tetsuo Fujii ,  Yan Gao ,  Evelyn Hu ,  Shuji Nakamura

发明人： Tetsuo Fujii ,  Yan Gao ,  Evelyn Hu ,  Shuji Nakamura

IPC分类号： H01S5/00

CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/60 ,  H01L2224/16225

摘要： A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) (42) of the LED and a surface of the N-face (42) is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face (42) is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

摘要翻译： 一种氮化镓（GaN）基发光二极管（LED），其中通过LED的氮面（N面）（42）提取光，并且将N面（42）的表面粗糙化成一个或多个 六角形锥体。 粗糙表面减少LED内部重复发生的光反射，从而从LED中提取更多的光。 通过各向异性蚀刻使N面（42）的表面粗糙化，其可以包括干蚀刻或光增强化学（PEC）蚀刻。

公开(公告)号：US07220658B2

公开(公告)日：2007-05-22

申请号：US10537644

申请日：2003-07-15

申请人： Benjamin A Haskell ,  Michael D. Craven ,  Paul T. Fini ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

发明人： Benjamin A Haskell ,  Michael D. Craven ,  Paul T. Fini ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC分类号： H01L21/20

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： Lateral epitaxial overgrowth (LEO) of non-polar a-plane gallium nitride (GaN) films by hydride vapor phase epitaxy (HVPE) results in significantly reduced defect density.

摘要翻译： 通过氢化物气相外延（HVPE）的非极性a面平面氮化镓（GaN）膜的横向外延生长（LEO）导致显着降低的缺陷密度。

公开(公告)号：US20070111531A1

公开(公告)日：2007-05-17

申请号：US11621482

申请日：2007-01-09

申请人： Troy Baker ,  Benjamin Haskell ,  Paul Fini ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

发明人： Troy Baker ,  Benjamin Haskell ,  Paul Fini ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

IPC分类号： H01L21/302

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  Y10S438/938

摘要： A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 13} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 22} gallium nitride (GaN) grown on a {1 100} sapphire substrate, and (4) {10 13} gallium nitride (GaN) grown on a {1 100} sapphire substrate

摘要翻译： 一种在杂交尖晶石衬底上生长平面，半极性氮化物膜的方法，其中大面积的平面半极性氮化物膜平行于衬底的表面。 平面膜和衬底是：（1）在{100}尖晶石衬底上在特定方向上生长的{10 11}氮化镓（GaN），（2）{10 22}氮化镓 “100”蓝宝石衬底，以及（4）在{1 100}蓝宝石衬底上生长的{10 13}氮化镓（GaN）