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公开(公告)号：US20170159170A1
公开(公告)日：2017-06-08
申请号：US15367813
申请日：2016-12-02
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yasunobu SUZUKI , Toshiharu HIRATA
CPC classification number: H01J37/3464 , C23C14/042 , C23C14/505 , C23C14/568 , H01J37/32733 , H01J37/32899 , H01J37/3411 , H01J37/3476 , H01L21/67184 , H01L21/67253 , H01L21/67742 , H01L21/681 , H01L21/6831
Abstract: A film forming system includes a camera having a field of view in a region through which an edge of a film-formed workpiece rotated by a rotational stage and an edge of the film of the film-formed workpiece pass. Based on three or more images obtained by the camera during the rotation of the film-formed workpiece, widths between the edge of the film-formed workpiece and the edge of the film of the film-formed workpiece at circumferentially different locations are obtained. Based on the widths obtained by the first unit, a first positional deviation of a central position of the film of the film-formed workpiece with respect to a central position of the film-formed workpiece is obtained. By using the first positional deviation of the film-formed workpiece, a transfer position of a transfer modules transferring the workpiece to a film forming apparatus used for producing the film-formed workpiece is corrected.
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公开(公告)号：US20160314946A1
公开(公告)日：2016-10-27
申请号：US14697267
申请日：2015-04-27
Applicant: Advanced Energy Industries, Inc.
Inventor： Douglas Pelleymounter
CPC classification number: H01J37/3476 , C23C14/3485 , C23C14/35 , H01J37/3405 , H01J37/3438 , H01J37/3444 , H01J37/3467 , H01J2237/2485 , H01J2237/327 , H01J2237/332
Abstract: A pulsed direct current sputtering system and method are disclosed. The system has a plasma chamber with two targets, two magnetrons and one anode, a first power source, and a second power source. The first power source is coupled to the first magnetron and the anode, and provides a cyclic first-power-source voltage with a positive potential and a negative potential during each cycle between the anode and the first magnetron. The second power source is coupled to the second magnetron and the anode, and provides a cyclic second-power-source voltage. The controller phase-synchronizes and controls the first-power-source voltage and second-power-source voltage to apply a combined anode voltage, and phase-synchronizes a first magnetron voltage with a second magnetron voltage, wherein the combined anode voltage applied to the anode has a magnitude of at least 80 percent of a magnitude of a sum of the first magnetron voltage and the second magnetron voltage.
Abstract translation: 公开了一种脉冲直流溅射系统和方法。 该系统具有具有两个靶的等离子体室，两个磁控管和一个阳极，第一电源和第二电源。 第一电源耦合到第一磁控管和阳极，并且在阳极和第一磁控管之间的每个循环期间提供具有正电位和负电位的循环第一电源电压。 第二电源耦合到第二磁控管和阳极，并提供循环的第二电源电压。 控制器将同步并控制第一电源电压和第二电源电压以施加组合的阳极电压，并将第一磁控管电压与第二磁控管电压相位同步，其中施加到 阳极具有第一磁控管电压和第二磁控管电压之和的幅度的至少80％的量值。
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公开(公告)号：US20160185605A1
公开(公告)日：2016-06-30
申请号：US15063614
申请日：2016-03-08
Applicant: EMPIRE TECHNOLOGY DEVELOPMENT LLC
Inventor： Thomas A. Yager , Joshua Robinson
CPC classification number: C23C14/545 , C01B32/186 , C23C14/022 , C23C14/14 , C23C14/34 , C23C16/0281 , C23C16/26 , C23C16/52 , C23C16/545 , H01J37/3426 , H01J37/347 , H01J37/3476 , H01J2237/022 , H01J2237/081 , H01J2237/24578 , H01J2237/2487 , H01J2237/3323 , Y10T428/265 , Y10T428/30
Abstract: Technologies are presented for growing graphene by chemical vapor deposition (CVD) on a high purity copper surface. The surface may be prepared by deposition of a high purity copper layer on a lower purity copper substrate using deposition processes such as sputtering, evaporation, electroplating, or CVD. The deposition of the high purity copper layer may be followed by a thermal treatment to facilitate grain growth. Use of the high purity copper layer in combination with the lower purity copper substrate may provide thermal expansion matching, compatibility with copper etch removal, or reduction of contamination, producing fewer graphene defects compared to direct deposition on a lower purity substrate at substantially less expense than deposition approaches using a high purity copper foil substrate.
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公开(公告)号：US20160155618A1
公开(公告)日：2016-06-02
申请号：US14416150
申请日：2014-12-08
Inventor： Tao Zhou
IPC: H01J37/34
CPC classification number: H01J37/3423 , H01J37/3405 , H01J37/3408 , H01J37/3426 , H01J37/3452 , H01J37/3476 , H01J37/3491
Abstract: A vacuum ion sputtering target device is disclosed, which has an accommodating space provided with a substrate, a magnetron, a target, and a back plate disposed therein. The target is disposed above the back plate, the magnetron is provided below the back plate, the substrate is disposed above the target; wherein a shape of the target depends on a distribution of a magnetic field strength. Target utilization is quiet high, and there is basically no target remaining, so costs will be reduced.
Abstract translation: 公开了一种真空离子溅射靶装置，其具有设置有基板，磁控管，靶和背板的容纳空间。 靶设置在背板的上方，磁控管设置在背板的下方，基板设置在目标上方; 其中所述目标的形状取决于磁场强度的分布。 目标利用率居高不下，基本没有目标，所以成本会降低。
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公开(公告)号：US09322096B2
公开(公告)日：2016-04-26
申请号：US13817533
申请日：2012-05-25
Applicant: Thomas A. Yager , Joshua Robinson
Inventor： Thomas A. Yager , Joshua Robinson
CPC classification number: C01B31/0453 , C01B32/186 , C23C14/022 , C23C14/14 , C23C14/34 , C23C14/545 , C23C16/0281 , C23C16/26 , C23C16/52 , C23C16/545 , H01J37/3426 , H01J37/347 , H01J37/3476 , H01J2237/022 , H01J2237/081 , H01J2237/24578 , H01J2237/2487 , H01J2237/3323 , Y10T428/265 , Y10T428/30
Abstract: Technologies are presented for growing graphene by chemical vapor deposition (CVD) on a high purity copper surface. The surface may be prepared by deposition of a high purity copper layer on a lower purity copper substrate using deposition processes such as sputtering, evaporation, electroplating, or CVD. The deposition of the high purity copper layer may be followed by a thermal treatment to facilitate grain growth. Use of the high purity copper layer in combination with the lower purity copper substrate may provide thermal expansion matching, compatibility with copper etch removal, or reduction of contamination, producing fewer graphene defects compared to direct deposition on a lower purity substrate at substantially less expense than deposition approaches using a high purity copper foil substrate.
Abstract translation: 介绍了通过化学气相沉积（CVD）在高纯度铜表面上生长石墨烯的技术。 表面可以通过使用诸如溅射，蒸发，电镀或CVD的沉积工艺在高纯度铜基底上沉积高纯度铜层来制备。 高纯度铜层的沉积之后可以进行热处理以促进晶粒生长。 与较低纯度的铜基底结合使用高纯度铜层可以提供热膨胀匹配，与铜蚀刻去除的相容性，或减少污染，产生较少的石墨烯缺陷，与直接沉积在较低纯度的基底上相比，费用低得多 使用高纯度铜箔衬底的沉积方法。
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Patent Agency Ranking
96.发明申请METHOD AND APPARATUS FOR SURFACE PROCESSING OF A SUBSTRATE USING AN ENERGETIC PARTICLE BEAM 审中-公开使用能量粒子束的基板的表面处理方法和装置公开(公告)号：US20160071708A1
公开(公告)日：2016-03-10
申请号：US14941897
申请日：2015-11-16
Applicant: Boris L. Druz , Piero Sferlazzo , Roger P. Fremgen , Alan V. Hayes , Viktor Kanarov , Robert Krause , Ira Reiss
Inventor： Boris L. Druz , Piero Sferlazzo , Roger P. Fremgen , Alan V. Hayes , Viktor Kanarov , Robert Krause , Ira Reiss
CPC classification number: H01J37/3488 , C23C14/044 , C23C14/221 , C23C14/46 , H01J37/20 , H01J37/302 , H01J37/317 , H01J37/32752 , H01J37/3441 , H01J37/3476 , H01J2237/0245 , H01J2237/045 , H01J2237/20207 , H01J2237/20214 , H01J2237/20221 , H01J2237/30472 , H01J2237/3146
Abstract: Method and apparatus for processing a substrate with an energetic particle beam. Features on the substrate are oriented relative to the energetic particle beam and the substrate is scanned through the energetic particle beam. The substrate is periodically indexed about its azimuthal axis of symmetry, while shielded from exposure to the energetic particle beam, to reorient the features relative to the major dimension of the beam.
Abstract translation: 用能量粒子束处理衬底的方法和设备。 衬底上的特征相对于能量粒子束定向，并且通过能量粒子束扫描衬底。 衬底围绕其方位角对称轴周期性地被索引，同时被屏蔽以防止暴露于能量粒子束，以相对于束的主要尺寸重新定向特征。
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公开(公告)号：US09281167B2
公开(公告)日：2016-03-08
申请号：US13777010
申请日：2013-02-26
Applicant: Applied Materials, Inc.
Inventor： Thanh X Nguyen , Rongjun Wang , Muhammad M Rasheed , Xianmin Tang
CPC classification number: H01J37/3408 , C23C14/35 , C23C14/564 , H01J37/3288 , H01J37/3405 , H01J37/3452 , H01J37/3455 , H01J37/3476
Abstract: A dual magnetron particularly useful for RF plasma sputtering includes a radially stationary open-loop magnetron comprising opposed magnetic poles and rotating about a central axis to scan an outer region of a sputter target and a radially movable open-loop magnetron comprising opposed magnetic poles and rotating together with the stationary magnetron. During processing, the movable magnetron is radially positioned in the outer region with an open end abutting an open end of the stationary magnetron to form a single open-loop magnetron. During cleaning, part of the movable magnetron is moved radially inwardly to scan and clean an inner region of the target not scanned by the stationary magnetron. The movable magnetron can be mounted on an arm pivoting about an axis at periphery of a rotating disk-shaped plate mounting the stationary magnetron so the arm centrifugally moves between radial positions dependent upon the rotation rate or direction.
Abstract translation: 特别适用于RF等离子体溅射的双重磁控管包括径向固定的开环磁控管，其包括相对的磁极并围绕中心轴线旋转以扫描溅射靶的外部区域和包括相对的磁极的可径向移动的开环磁控管 连同固定磁控管。 在处理过程中，可移动磁控管径向定位在外部区域中，开口端与固定磁控管的开口端相接触以形成单个开环磁控管。 在清洁期间，可移动磁控管的一部分径向向内移动以扫描和清洁未被固定磁控管扫描的目标的内部区域。 可移动磁控管可以安装在围绕安装固定磁控管的旋转盘形板的周边处的轴线枢转的臂上，使得臂根据旋转速率或方向离心地在径向位置之间移动。
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公开(公告)号：US20160042928A1
公开(公告)日：2016-02-11
申请号：US14921883
申请日：2015-10-23
Applicant: CANON ANELVA CORPORATION
Inventor： Satoshi YAMADA , Ryuji HIGASHISAKA
IPC: H01J37/34
CPC classification number: H01J37/347 , C23C14/35 , C23C14/568 , H01J37/3405 , H01J37/3411 , H01J37/3435 , H01J37/3455 , H01J37/3476 , H01J2237/20235 , H01J2237/24564 , H01J2237/24578 , H01J2237/3323
Abstract: A sputtering apparatus includes a vacuum chamber, a substrate holder, a target support member, a cathode magnet arranged on a side of the target support member, which is opposite to a side of a substrate held by the substrate holder, a magnet moving unit configured to adjust a distance between the cathode magnet and the target support member, a target moving unit configured to adjust a distance between the target support member and the substrate, and a control unit configured to control the target moving unit and the magnet moving unit.
Abstract translation: 溅射装置包括：真空室，基板保持架，目标支撑部件，配置在目标支撑部件侧的与由基板支架保持的基板侧相对的阴极;磁体移动部， 调整阴极磁体和目标支撑部件之间的距离，被配置为调整目标支撑部件和基板之间的距离的目标移动部件，以及被配置为控制目标移动部件和磁体移动部件的控制部。
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公开(公告)号：US09229291B2
公开(公告)日：2016-01-05
申请号：US14601141
申请日：2015-01-20
Applicant: View, Inc.
Inventor： Sridhar K. Kailasam , Robin Friedman , Dane Gillaspie , Anshu A. Pradhan , Robert Rozbicki , Disha Mehtani
CPC classification number: G02F1/1533 , C23C14/028 , C23C14/06 , C23C14/0635 , C23C14/0641 , C23C14/0652 , C23C14/0676 , C23C14/08 , C23C14/081 , C23C14/083 , C23C14/086 , C23C14/34 , G02F1/1309 , G02F1/133345 , G02F1/15 , G02F1/1523 , G02F1/155 , G02F2001/1536 , G02F2001/1555 , G02F2201/508 , H01B5/14 , H01B13/00 , H01J37/3429 , H01J37/3476
Abstract: Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.
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100.发明申请Method for Producing a Multilayer Coating and Device for Carrying Out Said Method 审中-公开生产多层涂层的方法和执行所述方法的装置公开(公告)号：US20150162173A1
公开(公告)日：2015-06-11
申请号：US14622597
申请日：2015-02-13
Applicant: Leybold Optics GmbH
Inventor： Michael Scherer , Jurgen Pistner , Walter Lehnert , Harro Hagedorn , Gerd Deppisch , Mario Roder
IPC: H01J37/34
CPC classification number: H01J37/3473 , C23C14/0078 , C23C14/0094 , C23C14/024 , C23C14/08 , C23C14/547 , H01J37/34 , H01J37/3405 , H01J37/3476 , H01J2237/3321
Abstract: A method for reducing the optical loss of the multilayer coating below a predetermined value in a zone by producing coating on a displaceable substrate in a vacuum chamber with the aid of a residual gas using a sputtering device. Reactive depositing a coating on the substrate by adding a reactive component with a predetermined stoichiometric deficit in a zone of the sputtering device. Displacing the substrate with the deposited coating into the vicinity of a plasma source, which is located in the vacuum chamber at a predetermined distance from the sputtering device. The plasma action of the plasma source modifying the structure and/or stoichiometry of the coating, preferably by adding a predetermined quantity of the reactive component to reduce the optical loss of the coating.
Abstract translation: 一种通过使用溅射装置借助于残余气体在真空室中在可位移的基板上产生涂层来将多层涂层的光学损耗降低到预定值的方法。 通过在溅射装置的区域中添加具有预定化学计量不足的反应性组分将反应性沉积在衬底上。 将具有沉积的涂层的基板置于等离子体源附近，该等离子体源位于距离溅射装置预定距离的真空室中。 等离子体源的等离子体作用改变了涂层的结构和/或化学计量，优选地通过加入预定量的反应组分来减少涂层的光学损耗。
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