WIRING BOARD
    91.
    发明申请
    WIRING BOARD 有权
    接线板

    公开(公告)号:US20150195908A1

    公开(公告)日:2015-07-09

    申请号:US14661665

    申请日:2015-03-18

    CPC classification number: H05K1/0353 H05K1/092 H05K3/247 H05K2201/0769

    Abstract: A wiring board includes: an insulating substrate; and a wiring layer including a first metal layer disposed on the insulating substrate and a second metal layer disposed so as to cover a surface of the first metal layer, the surface not being in contact with the insulating substrate, wherein the thickness of the second metal layer is 1/10 of the total thickness of the wiring layer, the wiring layer contains a migration inhibitor, and the mass Y of the migration inhibitor contained in the second metal layer is greater than the mass X of the migration inhibitor contained in the first metal layer.

    Abstract translation: 布线基板包括:绝缘基板; 以及布置层,其包括设置在绝缘基板上的第一金属层和设置成覆盖第一金属层的表面的第二金属层,该表面不与绝缘基板接触,其中第二金属 层是布线层的总厚度的1/10,布线层含有迁移抑制剂,第二金属层中含有的迁移抑制剂的质量Y大于第一金属层中所含的迁移抑制剂的质量X. 金属层。

    METHOD AND STRUCTURE FOR INHIBITING DENDRITE FORMATION
    93.
    发明申请
    METHOD AND STRUCTURE FOR INHIBITING DENDRITE FORMATION 审中-公开
    抑制沉积物形成的方法和结构

    公开(公告)号:US20150116961A1

    公开(公告)日:2015-04-30

    申请号:US14066689

    申请日:2013-10-30

    Abstract: A circuit includes a structure for inhibiting dendrite formation. The circuit includes a first electrode disposed within a first area of the circuit, wherein the first electrode is configured to be coupled to an ionic source that forms ions when a first electric potential is applied to the first electrode. The circuit also includes a second electrode disposed within a second area of the circuit. The second electrode is configured to receive a second electric potential that is less than the first electric potential and that causes the ions to migrate toward the second electrode to contribute to dendrite formation. The circuit further includes a structure disposed within a third area of the circuit. The structure is configured to receive a third electric potential to create a barrier that inhibits the migration of at least some of the ions from the first to the second electrode to inhibit dendrite formation.

    Abstract translation: 电路包括抑制枝晶形成的结构。 电路包括设置在电路的第一区域内的第一电极,其中第一电极被配置为耦合到当向第一电极施加第一电位时形成离子的离子源。 电路还包括设置在电路的第二区域内的第二电极。 第二电极被配置为接收小于第一电位的第二电位并且导致离子朝向第二电极迁移以有助于枝晶形成。 电路还包括设置在电路的第三区域内的结构。 该结构被配置为接收第三电位以产生阻挡至少一些离子从第一电极到第二电极迁移以阻止枝晶形成的屏障。

    Method of surface treatment for the inhibition of whiskers
    95.
    发明授权
    Method of surface treatment for the inhibition of whiskers 有权
    抑制晶须的表面处理方法

    公开(公告)号:US08821708B2

    公开(公告)日:2014-09-02

    申请号:US12089025

    申请日:2006-10-02

    Abstract: A surface treatment method of cladding a Sn or Sn alloy coating with one or more metals selected from among Mn, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Ga, In, Ti, Ge, Pb, Sb and Bi continuously or discontinuously in such a way as to make the Sn or Sn alloy coating partially exposed, which method makes it possible to inhibit the generation of whiskers in an Sn or Sn alloy coating formed on the surface of a substrate to which other member is pressure-welded or the joint surface to be soldered. Cladding an Sn or Sn alloy coating with a prescribed metal continuously or discontinuously in such a way as to make the coating partially exposed inhibits the generation of whiskers by contact pressure in pressure welding, and further inhibits the generation of whiskers without impairing the solder wettability of the coating even when the cladding is not followed by heat treatment or reflowing.

    Abstract translation: 一种用一种或多种选自Mn,Fe,Ru,Os,Co,Rh,Ir,Ni,Pd,Pt,Cu,Ag,Au,Zn,Cd中的一种或多种金属包覆Sn或Sn合金涂层的表面处理方法, Ga,In,Ti,Ge,Pb,Sb和Bi,以使Sn或Sn合金涂层部分露出的方式连续或不连续地使用,可以抑制Sn或Sn合金涂层中的晶须的产生 形成在其他构件被压焊的基板的表面上,或者形成在待焊接的接合面上。 连续地或不连续地以规定的金属包覆Sn或Sn合金涂层以使得涂层部分露出的方式通过压焊中的接触压力抑制晶须的产生,并且进一步抑制晶须的产生而不损害焊料润湿性 涂层即使当包覆层没有经过热处理或回流时也是如此。

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