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    Terminal structures of an ion implanter having insulated conductors with dielectric fins
    101.
    发明授权
    Terminal structures of an ion implanter having insulated conductors with dielectric fins 有权
    离子注入机的端子结构具有绝缘导体和介质翅片

    公开(公告)号：US07842934B2

    公开(公告)日：2010-11-30

    申请号：US11845441

    申请日：2007-08-27

    Applicant: Kasegn D. Tekletsadik ,  Eric Hermanson ,  Doug May ,  Steve Krause ,  Russell John Low

    Inventor： Kasegn D. Tekletsadik ,  Eric Hermanson ,  Doug May ,  Steve Krause ,  Russell John Low

    IPC: G21K5/00

    CPC classification number: H01J37/3171 ,  H01J37/16 ,  H01J2237/038 ,  H01J2237/08

    Abstract: Terminal structures of an ion implanter having insulated conductors with dielectric fins are disclosed. In one particular exemplary embodiment, the terminal structures of an ion implanter may be realized with insulated conductors with one or more dielectric fins. For example, the ion implanter may comprise an ion source configured to provide an ion beam. The ion implanter may also comprise a terminal structure defining a cavity, wherein the ion source may be at least partially disposed within the cavity. The ion implanter may further comprise an insulated conductor having at least one dielectric fin disposed proximate an exterior portion of the terminal structure to modify an electric field.

    Abstract translation: 公开了具有绝缘导体和绝缘鳍片的离子注入机的端子结构。 在一个特定的示例性实施例中，离子注入机的端子结构可以用具有一个或多个介质翅片的绝缘导体来实现。 例如，离子注入机可以包括被配置为提供离子束的离子源。 离子注入机还可以包括限定空腔的端子结构，其中离子源可以至少部分地设置在空腔内。 离子注入机还可以包括绝缘导体，其具有靠近端子结构的外部部分设置的至少一个介电鳍片，以修改电场。

    APPARATUS
    103.
    发明申请
    APPARATUS 有权
    仪器

    公开(公告)号：US20100219740A1

    公开(公告)日：2010-09-02

    申请号：US12305848

    申请日：2007-06-29

    Applicant: Mervyn Howard Davis ,  Andrew James Timothy Holmes

    Inventor： Mervyn Howard Davis ,  Andrew James Timothy Holmes

    IPC: H01J27/02

    CPC classification number: H01J37/04 ,  H01J27/024 ,  H01J37/3056 ,  H01J2237/04735 ,  H01J2237/08 ,  H05H15/00

    Abstract: An apparatus (200) for accelerating an ion beam comprising: a) a first electrode (202) having a proximal side and a distal side and having at least one aperture (201) therethrough, the wall of the aperture being shaped such that the radius of the aperture on the distal side of the first electrode is greater than that on the proximal side of the electrode; b) a second electrode (204) located such that it is adjacent to but spaced from the distal side of the first electrode and having at least one aperture therethrough; and c) a third electrode (206) located such that it is adjacent to and spaced from the second electrode and having at least one aperture therethrough, said at least one apertures in each electrode being aligned with corresponding apertures in the other electrodes; wherein the electrodes are arranged such that there is a potential difference between the first and second electrodes and a potential difference between the second and third electrodes.

    Abstract translation: 一种用于加速离子束的装置（200），包括：a）具有近侧和远侧的第一电极（202），并且具有穿过其中的至少一个孔（201），孔的壁成形为使得半径 在第一电极的远侧上的孔径大于电极的近侧上的孔径; b）第二电极（204），其定位成使得其与第一电极的远侧相邻但间隔开并且具有穿过其中的至少一个孔; 以及c）第三电极（206），其定位成使得其与所述第二电极相邻并间隔开并且具有穿过其中的至少一个孔，每个电极中的所述至少一个孔与其它电极中的相应孔对齐; 其中所述电极被布置成使得在所述第一和第二电极之间存在电位差和所述第二和第三电极之间的电位差。

    Ion implanting apparatus and method of correcting beam orbit
    104.
    发明授权
    Ion implanting apparatus and method of correcting beam orbit 失效
    离子注入装置和光束轨道校正方法

    公开(公告)号：US07772573B2

    公开(公告)日：2010-08-10

    申请号：US12476836

    申请日：2009-06-02

    Applicant: Tetsuya Igo ,  Takatoshi Yamashita ,  Tadashi Ikejiri

    Inventor： Tetsuya Igo ,  Takatoshi Yamashita ,  Tadashi Ikejiri

    IPC: G21K5/10 ,  H01J49/00 ,  B01D59/44

    CPC classification number: H01J37/3171 ,  H01J37/1471 ,  H01J2237/055 ,  H01J2237/08 ,  H01J2237/1501 ,  H01J2237/2446 ,  H01J2237/24528 ,  H01J2237/304

    Abstract: An extraction electrode of an ion source is dividedly configured by a first extraction electrode and a second extraction electrode. DC power supplies which form a potential difference between the electrodes, a camera which takes an image of the ion beam to output image data of the ion beam, and a rear-stage beam instrument which measures the beam current of the ion beam that has passed through the analysis slit are disposed. A step of adjusting an analysis electromagnet current so that the beam current measured by the rear-stage beam instrument is maximum, that of processing the image data from the camera to obtain the deviation angle of the ion beam entering the analysis slit from the design beam orbit, and that of, if the deviation angle is not within an allowable range, adjusting the potential difference between the electrodes so that the ion beam is bent to a direction where the deviation angle becomes small, by the potential difference are performed one or more times until the deviation angle is within the allowable range.

    Abstract translation: 离子源的提取电极由第一引出电极和第二引出电极分开地构成。 形成电极之间的电位差的直流电源，拍摄离子束的图像以输出离子束的图像数据的照相机，以及测量已经通过的离子束的束电流的后级光束仪器 通过分析缝设置。 调整分析电磁体电流使得由后级光束仪测得的光束电流最大的步骤是从相机处理图像数据以获得进入分析狭缝的离子束与设计光束的偏离角度的步骤 并且如果偏离角不在允许范围内，则调整电极之间的电位差使得离子束弯曲到偏移角变小的方向，通过电位差进行一个或多个 次，直到偏离角度在允许范围内。

    Ion implanting apparatus
    105.
    发明授权
    Ion implanting apparatus 失效
    离子注入装置

    公开(公告)号：US07759658B2

    公开(公告)日：2010-07-20

    申请号：US12418948

    申请日：2009-04-06

    Applicant: Yoshiki Nakashima

    Inventor： Yoshiki Nakashima

    IPC: H01J37/317 ,  H01J37/12 ,  H01J3/14

    CPC classification number: H01J37/3171 ,  H01J2237/04924 ,  H01J2237/08 ,  H01J2237/083 ,  H01J2237/15 ,  H01J2237/30477 ,  H01J2237/31701

    Abstract: An ion implanting apparatus is provided. The ion implanting apparatus includes a beam scanner, a beam collimator and a unipotential lens which is disposed between said beam scanner and said beam collimator, and which includes first, second, third, and fourth electrodes arranged in an ion beam traveling direction while forming first, second, and third gaps, said first and fourth electrodes being electrically grounded, wherein positions of centers of curvature of said first and third gaps of said unipotential lens coincide with a position of a scan center of said beam scanner, and wherein a position of a center of curvature of said second gap of said unipotential lens is shifted from the position of the scan center of said beam scanner toward a downstream or upstream side in the ion beam traveling direction.

    Abstract translation: 提供离子注入装置。 离子注入装置包括光束扫描器，光束准直器和设置在所述光束扫描器和所述光束准直器之间的单能透镜，并且包括以离子束行进方向排列的第一，第二，第三和第四电极，同时形成第一 第二和第三间隙，所述第一和第四电极是电接地的，其中所述单能透镜的所述第一和第三间隙的曲率中心位置与所述光束扫描器的扫描中心的位置重合，并且其中， 所述单能透镜的所述第二间隙的曲率中心从所述光束扫描器的扫描中心的位置向离子束行进方向的下游侧或上游侧偏移。

    DIAMOND ELECTRONIC DEVICES INCLUDING A SURFACE AND METHODS FOR THEIR MANUFACTURE
    107.
    发明申请
    DIAMOND ELECTRONIC DEVICES INCLUDING A SURFACE AND METHODS FOR THEIR MANUFACTURE 审中-公开
    包括表面的金刚石电子器件及其制造方法

    公开(公告)号：US20100078652A1

    公开(公告)日：2010-04-01

    申请号：US12523963

    申请日：2008-01-22

    Applicant: Geoffrey Alan Scarsbrook ,  Ian Friel ,  Richard Stuart Balmer

    Inventor： Geoffrey Alan Scarsbrook ,  Ian Friel ,  Richard Stuart Balmer

    IPC: H01L29/16

    CPC classification number: C01B32/28 ,  C23C16/27 ,  C23C16/274 ,  C23C16/278 ,  C30B25/105 ,  C30B25/20 ,  C30B29/04 ,  G01N21/87 ,  G01N21/95 ,  G01N27/308 ,  G01N2201/0636 ,  H01J37/321 ,  H01J2237/08 ,  H01J2237/3341 ,  H01L21/02104 ,  H01L21/02376 ,  H01L21/02527 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/041 ,  H01L29/045 ,  H01L29/1602 ,  H01L29/167 ,  H01L29/36 ,  Y10T428/24355

    Abstract: The present invention relates to a diamond electronic device comprising a functional surface formed by a planar surface of a single crystal diamond, the planar surface of the single crystal diamond having an Rq of less than 10 nm and at least one of the following characteristics: (a) the surface has not been mechanically processed since formation by synthesis; (b) the surface is an etched surface; (c) a density of dislocations in the diamond breaking the surface is less than 400 cm″2 measured over an area greater than 0.014 cm2; (d) the surface has an Rq less than 1 nm; (e) the surface has regions with a layer of charge carriers immediately below it, such that the regions of the surface are normally termed conductive, such as a hydrogen terminated {100} diamond surface region; (f) the surface has regions with no layer of charge carriers immediately below it, such that these regions of the surface are normally termed insulating, such as an oxygen terminated {100} diamond surface; and (g) the surface has one or more regions of metallization providing electrical contact to the diamond surface beneath these regions.

    Abstract translation: 金刚石电子器件技术领域本发明涉及一种金刚石电子器件，其包括由单晶金刚石的平面形成的功能表面，所述单晶金刚石的平面表面具有小于10nm的Rq和以下特征中的至少一个：（ a）通过合成形成，表面未被机械加工; （b）表面是蚀刻表面; （c）破碎表面的金刚石中的位错密度小于在大于0.014cm 2的区域上测量的400cm -2; （d）表面的Rq小于1nm; （e）表面具有紧邻其下方的电荷载流子层的区域，使得表面的区域通常称为导电的，例如氢封端的{100}金刚石表面区域; （f）表面具有在其正下方没有电荷载体层的区域，使得表面的这些区域通常称为绝缘体，例如氧终止的{100}金刚石表面; 和（g）表面具有一个或多个金属化区域，在这些区域下面的金刚石表面提供电接触。

    Charged Particle Source with Integrated Energy Filter
    109.
    发明申请
    Charged Particle Source with Integrated Energy Filter 有权
    带集成能量滤波器的带电粒子源

    公开(公告)号：US20090289195A1

    公开(公告)日：2009-11-26

    申请号：US12472259

    申请日：2009-05-26

    Applicant: Alexander Henstra

    Inventor： Alexander Henstra

    IPC: H01J3/14

    CPC classification number: H01J37/05 ,  H01J3/027 ,  H01J3/04 ,  H01J37/063 ,  H01J2237/045 ,  H01J2237/057 ,  H01J2237/061 ,  H01J2237/08 ,  H01J2237/15 ,  H01J2237/1534

    Abstract: The invention describes a particle source in which energy selection occurs. The energy selection occurs by sending a beam of electrically charged particles 103 eccentrically through a lens 107. As a result of this, energy dispersion will occur in an image formed by the lens. By projecting this image onto a slit 109 in an energy selecting diaphragm 108, it is possible to allow only particles in a limited portion of the energy spectrum to pass. Consequently, the passed beam 113 will have a reduced energy spread. Deflection unit 112 deflects the beam to the optical axis 101. One can also elect to deflect a beam 105 going through the middle of the lens toward the optical axis and having, for example, greater current.The energy dispersed spot is imaged on the slit by a deflector 111. When positioning the energy dispersed spot on the slit, central beam 105 is deflected from the axis to such an extent that it is stopped by the energy selecting diaphragm. Hereby reflections and contamination resulting from this beam in the region after the diaphragm are avoided. Also electron-electron interaction resulting from the electrons from the central beam interacting with the energy filtered beam in the area of deflector 112 is avoided.

    Abstract translation: 本发明描述了发生能量选择的粒子源。 通过透过透镜107偏心地发送带电粒子103的束来进行能量选择。结果，由透镜形成的图像中会发生能量分散。 通过将该图像投影到能量选择膜108中的狭缝109上，可以仅允许能谱范围的有限部分中的粒子通过。 因此，通过的梁113将具有减小的能量扩展。 偏转单元112将光束偏转到光轴101.也可以选择将穿过透镜中间的光束105偏转到光轴并具有例如更大的电流。 能量分散点通过偏转器111在狭缝上成像。当将能量分散光斑定位在狭缝上时，中心光束105从轴线偏转到被能量选择光阑停止的程度。 因此避免了在隔膜之后的区域中由该光束产生的反射和污染。 避免了在偏转器112的区域中与来自中心光束的电子与能量过滤光束相互作用的电子 - 电子相互作用。

    HIGH RESOLUTION GAS FIELD ION COLUMN WITH REDUCED SAMPLE LOAD
    110.
    发明申请
    HIGH RESOLUTION GAS FIELD ION COLUMN WITH REDUCED SAMPLE LOAD 有权
    高分辨率气体场离子柱与减少样品负载

    公开(公告)号：US20090146074A1

    公开(公告)日：2009-06-11

    申请号：US12277818

    申请日：2008-11-25

    Applicant: Helmut BANZHOF ,  Juergen FROSIEN ,  Dieter WINKLER

    Inventor： Helmut BANZHOF ,  Juergen FROSIEN ,  Dieter WINKLER

    IPC: H01J3/14

    CPC classification number: H01J37/04 ,  H01J37/28 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/0492 ,  H01J2237/08 ,  H01J2237/0807

    Abstract: A method of operating a focused ion beam device having a gas field ion source is described. According to some embodiments, the method includes emitting an ion beam from a gas field ion source, providing an ion beam column ion beam energy in the ion beam column which is higher than the final beam energy, decelerating the ion beam for providing a final beam energy on impingement of the ion beam on the specimen of 1 keV to 4 keV, and imaging the specimen.

    Abstract translation: 描述了具有气体场离子源的聚焦离子束装置的操作方法。 根据一些实施例，该方法包括从气体场离子源发射离子束，在离子束列中提供高于最终光束能量的离子束柱离子束能量，使离子束减速以提供最终光束 将离子束撞击在1keV至4keV的样品上的能量，并对样品进行成像。

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