公开(公告)号：US5118385A

公开(公告)日：1992-06-02

申请号：US705843

申请日：1991-05-28

Applicant: Nalin Kumar ,  Charles W. C. Lin

Inventor： Nalin Kumar ,  Charles W. C. Lin

IPC: H01L21/48 ,  H01L23/498 ,  H05K3/42 ,  H05K3/46

CPC classification number: H01L21/4857 ,  H01L23/49866 ,  H05K3/422 ,  H05K3/467 ,  H01L2924/00013 ,  H01L2924/0002

Abstract: Method for making a multilayer electrical interconnect with stacked pillars between layers using a minimal number of conventional process steps. The method includes sputtering a chromium/copper/titanium trilayer on a dielectric base, depositing a patterned mask on the trilayer, etching the exposed trilayer, removing the mask, depositing a layer of polyimide over the unetched copper, forming a via in the polyimide above the copper, electrolessly plating nickel into the via, and polishing the interconnect to form a planar top surface.

Abstract translation: 使用最少数量的常规工艺步骤在层之间制造具有堆叠柱的多层电互连的方法。 该方法包括在电介质基底上溅射铬/铜/钛三叠层，在三层上沉积图案化掩模，蚀刻暴露的三层，去除掩模，在未蚀刻的铜上沉积聚酰亚胺层，在上述聚酰亚胺中形成通孔 铜，无电镀镍到通孔中，并且研磨互连以形成平坦的顶表面。

公开(公告)号：US4981715A

公开(公告)日：1991-01-01

申请号：US494897

申请日：1990-03-13

Applicant: Tom J. Hirsch ,  Charles W. C. Lin

Inventor： Tom J. Hirsch ,  Charles W. C. Lin

IPC: C23C18/16 ,  H05K3/18

CPC classification number: H05K3/185 ,  C23C18/1608 ,  C23C18/1612 ,  C23C18/204 ,  C23C18/2066 ,  C23C18/208 ,  C23C18/2086 ,  C23C18/30 ,  C23C18/2006 ,  H05K2203/107

Abstract: A method is described for patterning electroless plated metal on a polymer substrate. A substrate is first coated with a polymer suitable for complexing noble metal compounds. The substrate is then complexed with a noble metal compound, such as containing palladium, selectively irradiated to form the desired conductor pattern, and then etched so that the desired pattern remains. The substrate is subsequently placed in an electroless plating bath to form a metal pattern. Alternatively, before applying the noble metal compound, a substrate immersed in a polymer solution suitable for complexing a noble metal compound can be selectively irradiated to selectively deposit polymer on the substrate, followed by applying a noble metal compound and an electroless plating bath.

Abstract translation: 描述了一种在聚合物基底上构图化学镀金属的方法。 首先用适合于络合贵金属化合物的聚合物涂覆基材。 然后将衬底与贵金属化合物（例如含有钯）复合，选择性地照射以形成所需的导体图案，然后蚀刻，使得所需图案保留。 然后将衬底放置在化学镀浴中以形成金属图案。 或者，在应用贵金属化合物之前，可以选择性地照射浸渍在适于配合贵金属化合物的聚合物溶液中的基板，以选择性地将聚合物沉积在基板上，然后涂覆贵金属化合物和化学镀浴。

公开(公告)号：US08952526B2

公开(公告)日：2015-02-10

申请号：US13287374

申请日：2011-11-02

Applicant: Charles W. C. Lin ,  Chia-Chung Wang

Inventor： Charles W. C. Lin ,  Chia-Chung Wang

IPC: H01L23/34 ,  H01L23/31 ,  H01L21/56 ,  H01L23/367 ,  H01L23/498 ,  H01L23/538 ,  H01L23/552 ,  H01L23/00 ,  H01L25/10 ,  H05K1/02 ,  H05K1/18

CPC classification number: H01L23/3121 ,  H01L21/56 ,  H01L23/3677 ,  H01L23/49827 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/82 ,  H01L25/105 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/1132 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/19 ,  H01L2224/2101 ,  H01L2224/211 ,  H01L2224/215 ,  H01L2224/221 ,  H01L2224/24101 ,  H01L2224/24221 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/73267 ,  H01L2224/82106 ,  H01L2224/83192 ,  H01L2224/83862 ,  H01L2224/92244 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/3511 ,  H05K1/0207 ,  H05K1/186 ,  H01L2224/13099 ,  H01L2924/00

Abstract: A stackable semiconductor assembly includes a semiconductor device, a heat spreader, an adhesive, a plated through-hole, first build-up circuitry and second build-up circuitry. The heat spreader includes a bump and a flange. The bump defines a cavity. The semiconductor device is mounted on the bump at the cavity, electrically connected to the first build-up circuitry and thermally connected to the bump. The bump extends into an opening in the adhesive and the flange extends laterally from the bump at the cavity entrance. The first build-up circuitry and the second build-up circuitry extend beyond the semiconductor device in opposite vertical directions. The plated through-hole extends through the adhesive and provides signal routing between the first build-up circuitry and the second build-up circuitry. The heat spreader provides heat dissipation for the semiconductor device.

Abstract translation: 可堆叠半导体组件包括半导体器件，散热器，粘合剂，电镀通孔，第一堆积电路和第二堆积电路。 散热器包括凸块和凸缘。 凸块限定一个空腔。 半导体器件安装在空腔处的凸块上，电连接到第一积聚电路并热连接到凸块。 凸块延伸到粘合剂中的开口中，并且凸缘从空腔入口处的凸起横向延伸。 第一积聚电路和第二堆积电路在相反的垂直方向上延伸超出半导体器件。 电镀通孔延伸穿过粘合剂并且在第一聚集电路和第二聚集电路之间提供信号路由。 散热器为半导体器件提供散热。

公开(公告)号：US08525214B2

公开(公告)日：2013-09-03

申请号：US13111966

申请日：2011-05-20

Applicant: Charles W. C. Lin ,  Chia-Chung Wang ,  Ming Yu Shih

Inventor： Charles W. C. Lin ,  Chia-Chung Wang ,  Ming Yu Shih

IPC: H01L33/00 ,  H01L23/367 ,  H01L23/34

CPC classification number: H01L21/486 ,  H01L23/3677 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/85 ,  H01L33/483 ,  H01L33/642 ,  H01L2224/2919 ,  H01L2224/32188 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83855 ,  H01L2224/85207 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2924/19041 ,  H05K1/0204 ,  H05K3/0061 ,  H05K2201/09054 ,  H05K2201/10106 ,  H05K2203/0369 ,  H01L2924/0665 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace, an adhesive and a support layer. The heat spreader includes a post, a base, an underlayer and a thermal via. The conductive trace includes a pad and a terminal. The semiconductor device is electrically connected to the conductive trace and thermally connected to the heat spreader. The post extends upwardly from the base into an opening in the adhesive, the base extends laterally from the post, the support layer is sandwiched between the base and the underlayer and the thermal via extends from the base through the support layer to the underlayer. The conductive trace provides signal routing between the pad and the terminal.

Abstract translation: 半导体芯片组件包括半导体器件，散热器，导电迹线，粘合剂和支撑层。 散热器包括柱，基座，​​底层和热通孔。 导电迹线包括焊盘和端子。 半导体器件电连接到导电迹线并热连接到散热器。 柱从基部向上延伸到粘合剂中的开口中，基部从柱延伸，支撑层夹在基部和底层之间，并且热通孔从基部延伸穿过支撑层到底层。 导电迹线提供焊盘和端子之间的信号路由。

公开(公告)号：US08324653B1

公开(公告)日：2012-12-04

申请号：US12848176

申请日：2010-08-01

Applicant: Charles W. C. Lin ,  Chia-Chung Wang

Inventor： Charles W. C. Lin ,  Chia-Chung Wang

IPC: H01L33/00

CPC classification number: H01L23/36 ,  H01L23/142 ,  H01L23/3121 ,  H01L23/498 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/29144 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/0105 ,  H01L2924/00 ,  H01L2224/05599

Abstract: A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an insulative material. The heat spreader includes a base and a ceramic block. The conductive trace provides signal routing between a pad and a terminal. The insulative material extends between the base and the terminal. The ceramic block is embedded in the base. The semiconductor device overlaps the ceramic block, is electrically connected to the conductive trace and is thermally connected to the heat spreader.

Abstract translation: 半导体芯片组件包括半导体器件，散热器，导电迹线和绝缘材料。 散热器包括基座和陶瓷块。 导电迹线提供焊盘和端子之间的信号路由。 绝缘材料在基座和端子之间延伸。 陶瓷块嵌入底座。 半导体器件与陶瓷块重叠，电连接到导电迹线并与散热器热连接。

公开(公告)号：US08310043B2

公开(公告)日：2012-11-13

申请号：US12975429

申请日：2010-12-22

Applicant: Charles W. C. Lin ,  Chia-Chung Wang

Inventor： Charles W. C. Lin ,  Chia-Chung Wang

IPC: H01L23/10 ,  H01L23/34

CPC classification number: H01L21/486 ,  H01L23/3677 ,  H01L23/60 ,  H01L24/28 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L33/483 ,  H01L33/486 ,  H01L33/642 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32013 ,  H01L2224/32188 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83855 ,  H01L2224/85205 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/15747 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/351 ,  H01L2933/0066 ,  H05K1/0204 ,  H05K1/056 ,  H05K2201/09054 ,  H05K2201/10106 ,  H05K2203/0369 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/01007 ,  H01L2924/01031 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/01026 ,  H01L2924/0104 ,  H01L2924/01033 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The heat spreader includes a post, a base, an ESD protection layer and an underlayer. The conductive trace includes a pad and a terminal. The semiconductor device is electrically connected to the conductive trace, electrically isolated from the underlayer and thermally connected to the heat spreader. The post extends upwardly from the base into an opening in the adhesive, the base extends laterally from the post and the ESD protection layer is sandwiched between the base and the underlayer. The conductive trace provides signal routing between the pad and the terminal.

Abstract translation: 半导体芯片组件包括半导体器件，散热器，导电迹线和粘合剂。 散热器包括支柱，基座，​​ESD保护层和底层。 导电迹线包括焊盘和端子。 半导体器件电连接到导电迹线，与底层电隔离并热连接到散热器。 柱从基部向上延伸到粘合剂中的开口中，基部从柱延伸，并且ESD保护层夹在基部和底层之间。 导电迹线提供焊盘和端子之间的信号路由。

公开(公告)号：US08304292B1

公开(公告)日：2012-11-06

申请号：US12849018

申请日：2010-08-03

Applicant: Charles W. C. Lin ,  Chia-Chung Wang

Inventor： Charles W. C. Lin ,  Chia-Chung Wang

IPC: H01L21/50 ,  H01L21/56 ,  H01L21/58

CPC classification number: H01L23/36 ,  H01L23/142 ,  H01L23/3121 ,  H01L23/498 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/29144 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/0105 ,  H01L2924/00 ,  H01L2224/05599

Abstract: A method of making a semiconductor chip assembly includes providing a metal plate, providing a ceramic block in the metal plate, providing an insulative material in the metal plate, wherein the metal plate includes a base and a terminal, then providing a conductive layer on the base and the ceramic block, providing a conductive trace that includes a pad, the terminal and a selected portion of the conductive layer, then mounting a semiconductor device on the ceramic block, wherein a heat spreader includes the base and the ceramic block, electrically connecting the semiconductor device to the conductive trace and thermally connecting the semiconductor device to the heat spreader.

Abstract translation: 制造半导体芯片组件的方法包括提供金属板，在金属板中提供陶瓷块，在金属板中提供绝缘材料，其中金属板包括基座和端子，然后在导体层上提供导电层 基底和陶瓷块，提供导电迹线，其包括衬垫，端子和导电层的选定部分，然后将半导体器件安装在陶瓷块上，其中散热器包括基座和陶瓷块，电连接 半导体器件到导电迹线并将半导体器件热连接到散热器上。

公开(公告)号：US08288792B2

公开(公告)日：2012-10-16

申请号：US12987166

申请日：2011-01-10

Applicant: Charles W. C. Lin ,  Chia-Chung Wang

Inventor： Charles W. C. Lin ,  Chia-Chung Wang

IPC: H01L33/00 ,  H01L23/367 ,  H01L23/34

CPC classification number: H01L21/486 ,  H01L23/3677 ,  H01L24/28 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L33/486 ,  H01L33/642 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32013 ,  H01L2224/32188 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83855 ,  H01L2224/85205 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/12041 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/19041 ,  H05K1/0204 ,  H05K1/056 ,  H05K3/445 ,  H05K2201/09054 ,  H05K2201/10106 ,  H05K2203/0369 ,  H05K2203/063 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and first and second adhesives. The heat spreader includes a first post, a second post and a base. The conductive trace includes a pad and a terminal. The semiconductor device is electrically connected to the conductive trace and thermally connected to the heat spreader. The first post extends from the base in a first vertical direction into a first opening in the first adhesive, the second post extends from the base in a second vertical direction into a second opening in the second adhesive and the base is sandwiched between and extends laterally from the posts. The conductive trace provides signal routing between the pad and the terminal.

Abstract translation: 半导体芯片组件包括半导体器件，散热器，导电迹线以及第一和第二粘合剂。 散热器包括第一柱，第二柱和基部。 导电迹线包括焊盘和端子。 半导体器件电连接到导电迹线并热连接到散热器。 第一柱从第一垂直方向的基部延伸到第一粘合剂中的第一开口中，第二柱从第二垂直方向的基部延伸到第二粘合剂中的第二开口中，并且基部夹在两侧之间并且横向延伸 从帖子。 导电迹线提供焊盘和端子之间的信号路由。

公开(公告)号：US08236619B2

公开(公告)日：2012-08-07

申请号：US13092913

申请日：2011-04-23

Applicant: Charles W. C. Lin ,  Chia-Chung Wang

Inventor： Charles W. C. Lin ,  Chia-Chung Wang

IPC: H01L21/00

CPC classification number: H01L21/486 ,  H01L23/3677 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L24/85 ,  H01L33/483 ,  H01L33/642 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32188 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83855 ,  H01L2224/85207 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/0132 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12041 ,  H01L2924/15174 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/351 ,  H05K1/0204 ,  H05K1/115 ,  H05K3/0061 ,  H05K3/06 ,  H05K2201/09054 ,  H05K2201/09509 ,  H05K2201/10106 ,  H05K2203/0369 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01007 ,  H01L2924/01015 ,  H01L2924/01026 ,  H01L2924/00012

Abstract: A method of making a semiconductor chip assembly includes providing a post and a base, mounting a second adhesive on the base, mounting a substrate with a conductive pattern on the second adhesive, mounting a first adhesive on the substrate and mounting a conductive layer on the first adhesive, then flowing the first adhesive upward between the post and the conductive layer and flowing the second adhesive upward between the post and the substrate, solidifying the adhesives, then providing a conductive trace that includes a pad, a terminal, the conductive pattern, first and second vias and a selected portion of the conductive layer, mounting a semiconductor device on the post, wherein a heat spreader includes the post and the base, electrically connecting the semiconductor device to the conductive trace and thermally connecting the semiconductor device to the heat spreader.

Abstract translation: 一种制造半导体芯片组件的方法包括提供柱和基座，将第二粘合剂安装在基座上，将具有导电图案的基板安装在第二粘合剂上，将第一粘合剂安装在基板上并将导电层安装在 第一粘合剂，然后使第一粘合剂在柱和导电层之间向上流动并使第二粘合剂在柱和基底之间向上流动，固化粘合剂，然后提供包括垫，端子，导电图案的导电迹线， 第一和第二通孔和导电层的选定部分，将半导体器件安装在柱上，其中散热器包括柱和基座，将半导体器件电连接到导电迹线并将半导体器件热连接到热 吊具

公开(公告)号：US08232576B1

公开(公告)日：2012-07-31

申请号：US12848175

申请日：2010-08-01

Applicant: Charles W. C. Lin ,  Chia-Chung Wang ,  Sangwhoo Lim

Inventor： Charles W. C. Lin ,  Chia-Chung Wang ,  Sangwhoo Lim

IPC: H01L33/00 ,  H01L23/34

CPC classification number: H01L21/486 ,  H01L21/4882 ,  H01L23/3677 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L33/483 ,  H01L33/62 ,  H01L33/642 ,  H01L2224/29144 ,  H01L2224/32188 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83805 ,  H01L2224/83815 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19041 ,  H05K1/0204 ,  H05K1/021 ,  H05K3/0061 ,  H05K2201/09054 ,  H05K2201/09745 ,  H05K2201/10106 ,  H01L2924/0105 ,  H01L2224/32225 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The heat spreader includes a post, a base and a ceramic block. The post extends upwardly from the base into an opening in the adhesive, the base extends laterally from the post and the ceramic block is embedded in the post. The semiconductor device overlaps the ceramic block, is electrically connected to the conductive trace and is thermally connected to the ceramic block. The adhesive extends between the post and the conductive trace and between the base and the conductive trace. The conductive trace provides signal routing between a pad and a terminal.

Abstract translation: 半导体芯片组件包括半导体器件，散热器，导电迹线和粘合剂。 散热器包括柱，基座和陶瓷块。 柱从基部向上延伸到粘合剂中的开口中，基部从柱侧向延伸，并且陶瓷块嵌入柱中。 半导体器件与陶瓷块重叠，电连接到导电迹线并且热连接到陶瓷块。 粘合剂在柱和导电迹线之间以及基部和导电迹线之间延伸。 导电迹线提供焊盘和端子之间的信号路由。