公开(公告)号：US20110018114A1

公开(公告)日：2011-01-27

申请号：US12507130

申请日：2009-07-22

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

IPC分类号： H01L23/52 ,  H01L21/50 ,  H01L21/58 ,  H01L21/768

CPC分类号： H01L25/0657 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/36 ,  H01L23/3677 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/97 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/32145 ,  H01L2224/73267 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01L2924/00

摘要： A semiconductor device is made by forming a first thermally conductive layer over a first surface of a semiconductor die. A second surface of the semiconductor die is mounted to a sacrificial carrier. An encapsulant is deposited over the first thermally conductive layer and sacrificial carrier. The encapsulant is planarized to expose the first thermally conductive layer. A first insulating layer is formed over the second surface of the semiconductor die and a first surface of the encapsulant. A portion of the first insulating layer over the second surface of the semiconductor die is removed. A second thermally conductive layer is formed over the second surface of the semiconductor die within the removed portion of the first insulating layer. An electrically conductive layer is formed within the insulating layer around the second thermally conductive layer. A heat sink can be mounted over the first thermally conductive layer.

摘要翻译： 通过在半导体管芯的第一表面上形成第一导热层来制造半导体器件。 半导体管芯的第二表面安装到牺牲载体上。 密封剂沉积在第一导热层和牺牲载体上。 将密封剂平坦化以暴露第一导热层。 第一绝缘层形成在半导体管芯的第二表面和密封剂的第一表面上。 半导体管芯的第二表面上的第一绝缘层的一部分被去除。 在第一绝缘层的去除部分内的半导体管芯的第二表面上形成第二导热层。 在第二导热层周围的绝缘层内形成导电层。 散热器可以安装在第一导热层上。

公开(公告)号：US20110014746A1

公开(公告)日：2011-01-20

申请号：US12505273

申请日：2009-07-17

申请人： Byung Tai Do ,  Reza A. Pagaila

发明人： Byung Tai Do ,  Reza A. Pagaila

IPC分类号： H01L21/98 ,  H01L21/78

CPC分类号： H01L25/0657 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/50 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/48 ,  H01L24/96 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/06181 ,  H01L2224/1134 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/2518 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by providing a semiconductor wafer having semiconductor die separated by a peripheral region. An opening is formed in the peripheral region having a depth less than a thickness of the wafer. A conductive material is deposited in the opening of the peripheral region of the wafer to form a conductive via extending partially through the wafer. The wafer is singulated through the conductive via in the peripheral region to provide a plurality of semiconductor die each having the conductive via. A semiconductor die is mounted on a sacrificial carrier. An encapsulant is deposited over the carrier around the semiconductor die. A portion of the encapsulant and semiconductor die is removed to expose the conductive via. A first and second interconnect structure are formed over the encapsulant and semiconductor die. The first and second interconnect structures are electrically connected to the conductive via.

摘要翻译： 通过提供具有由周边区域分离的半导体管芯的半导体晶片来制造半导体器件。 在具有小于晶片厚度的深度的周边区域中形成开口。 导电材料沉积在晶片的周边区域的开口中，以形成部分穿过晶片延伸的导电通孔。 晶片通过周边区域中的导电通孔分离，以提供多个具有导电通孔的半导体管芯。 半导体管芯安装在牺牲载体上。 在半导体管芯周围的载体上沉积密封剂。 去除一部分密封剂和半导体管芯以露出导电通孔。 在密封剂和半导体管芯上形成第一和第二互连结构。 第一和第二互连结构电连接到导电通孔。

公开(公告)号：US20100270656A1

公开(公告)日：2010-10-28

申请号：US12832821

申请日：2010-07-08

申请人： Byung Tai Do ,  Reza A. Pagaila ,  Linda Pei Ee Chua

发明人： Byung Tai Do ,  Reza A. Pagaila ,  Linda Pei Ee Chua

IPC分类号： H01L23/544 ,  H01L29/06

CPC分类号： H01L23/49816 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/3107 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/16 ,  H01L24/48 ,  H01L25/105 ,  H01L2221/68327 ,  H01L2221/68372 ,  H01L2224/02313 ,  H01L2224/02333 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13184 ,  H01L2224/48137 ,  H01L2224/4823 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2224/13099 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor wafer contains a plurality of semiconductor die each having a peripheral area around the die. A first insulating layer is formed over the die. A recessed region with angled sidewall is formed in the peripheral area. A first conductive layer is formed over the first insulating layer outside the recessed region and further into the recessed region. A conductive pillar is formed over the first conductive layer within the recessed region. A second insulating layer is formed over the first insulating layer, conductive pillar, and first conductive layer such that the conductive pillar is exposed from the second insulating layer. A dicing channel partially through the peripheral area. The semiconductor wafer undergoes backgrinding to the dicing channel to singulate the semiconductor wafer and separate the semiconductor die. The semiconductor die can be disposed in a semiconductor package with other components and electrically interconnected through the conductive pillar.

公开(公告)号：US07741156B2

公开(公告)日：2010-06-22

申请号：US12127417

申请日：2008-05-27

申请人： Reza A. Pagaila ,  Linda Pei Ee Chua ,  Byung Tai Do

发明人： Reza A. Pagaila ,  Linda Pei Ee Chua ,  Byung Tai Do

IPC分类号： H01L21/00

CPC分类号： H01L23/481 ,  H01L21/50 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3157 ,  H01L24/18 ,  H01L24/19 ,  H01L24/48 ,  H01L24/73 ,  H01L24/82 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2224/02371 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/18 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82005 ,  H01L2224/82039 ,  H01L2224/9222 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by providing a first semiconductor wafer having semiconductor die. A gap is made between the semiconductor die. An insulating material is deposited in the gap. A portion of the insulating material is removed to form a first through hole via (THV). A conductive lining is conformally deposited in the first THV. A solder material is disposed above the conductive lining of the first THV. A second semiconductor wafer having semiconductor die is disposed over the first wafer. A second THV is formed in a gap between the die of the second wafer. A conductive lining is conformally deposited in the second THV. A solder material is disposed above the second THV. The second THV is aligned to the first THV. The solder material is reflowed to form the conductive vias within the gap. The gap is singulated to separate the semiconductor die.

摘要翻译： 通过提供具有半导体管芯的第一半导体晶片来制造半导体器件。 在半导体管芯之间形成间隙。 绝缘材料沉积在间隙中。 去除绝缘材料的一部分以形成通过（THV）的第一通孔。 导电衬里共形沉积在第一个THV中。 焊料材料设置在第一THV的导电衬里之上。 具有半导体管芯的第二半导体晶片设置在第一晶片上。 第二THV形成在第二晶片的管芯之间的间隙中。 导电衬里共形沉积在第二个THV中。 焊料材料设置在第二THV之上。 第二个THV与第一个THV对齐。 焊料材料被回流以在间隙内形成导电通孔。 将间隙分开以分离半导体管芯。

公开(公告)号：US20100102456A1

公开(公告)日：2010-04-29

申请号：US12683008

申请日：2010-01-06

申请人： Reza A. Pagaila ,  Byung Tai Do

发明人： Reza A. Pagaila ,  Byung Tai Do

IPC分类号： H01L23/48

CPC分类号： H01L25/0657 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/481 ,  H01L24/18 ,  H01L24/19 ,  H01L24/48 ,  H01L25/03 ,  H01L2224/04105 ,  H01L2224/18 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/9222 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06551 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by creating a gap between semiconductor die on a wafer. An insulating material is deposited in the gap. A first portion of the insulating material is removed from a first side of the semiconductor wafer to form a first notch. The first notch is less than a thickness of the semiconductor die. A conductive material is deposited into the first notch to form a first portion of the conductive via within the gap. A second portion of the insulating material is removed from a second side of the semiconductor wafer to form a second notch. The second notch extends through the insulating material to the first notch. A conductive material is deposited into the second notch to form a second portion of the conductive via within the gap. The semiconductor wafer is singulated through the gap to separate the semiconductor die.

摘要翻译： 通过在晶片上形成半导体管芯之间的间隙来制造半导体器件。 绝缘材料沉积在间隙中。 从半导体晶片的第一侧去除绝缘材料的第一部分以形成第一凹口。 第一缺口小于半导体管芯的厚度。 导电材料沉积到第一凹口中以在间隙内形成导电通孔的第一部分。 从半导体晶片的第二侧去除绝缘材料的第二部分以形成第二凹口。 第二凹口延伸穿过绝缘材料到第一凹口。 导电材料沉积到第二凹口中以在间隙内形成导电通孔的第二部分。 半导体晶片通过间隙被分离，以分离半导体管芯。

公开(公告)号：US07704796B2

公开(公告)日：2010-04-27

申请号：US12133177

申请日：2008-06-04

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Heap Hoe Kuan

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Heap Hoe Kuan

IPC分类号： H01L21/00

CPC分类号： H01L24/18 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/3185 ,  H01L23/481 ,  H01L24/19 ,  H01L24/48 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/18 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/9222 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor die has an insulating material disposed in a peripheral region around the die. A blind via is formed through the gap. A conductive material is deposited in the blind via to form a conductive via. A conductive layer is formed between the conductive via and contact pad on the semiconductor die. A protective layer is formed over the front side of the semiconductor die. A portion of the insulating material and conductive via is removed from a backside of the semiconductor die opposite the front side of the semiconductor die so that a thickness of the conductive via is less than a thickness of the semiconductor wafer. The insulating material and conductive via are tapered. The wafer is singulated through the gap to separate the semiconductor die. A plurality of semiconductor die can be stacked and electrically interconnected through the conductive vias.

摘要翻译： 半导体管芯具有设置在管芯周围的周边区域的绝缘材料。 盲孔通过间隙形成。 导电材料沉积在盲孔中以形成导电通孔。 在半导体管芯上的导电通孔和接触焊盘之间形成导电层。 在半导体管芯的前侧形成有保护层。 从半导体管芯的与半导体管芯的前侧相反的背面去除绝缘材料和导电通孔的一部分，使得导电通孔的厚度小于半导体晶片的厚度。 绝缘材料和导电通孔是锥形的。 通过间隙将晶片分离，以分离半导体管芯。 多个半导体管芯可以通过导电通孔堆叠并电互连。

公开(公告)号：US07666711B2

公开(公告)日：2010-02-23

申请号：US12127357

申请日：2008-05-27

申请人： Reza A. Pagaila ,  Byung Tai Do

发明人： Reza A. Pagaila ,  Byung Tai Do

IPC分类号： H01L23/52 ,  H01L21/304

CPC分类号： H01L25/0657 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/481 ,  H01L24/18 ,  H01L24/19 ,  H01L24/48 ,  H01L25/03 ,  H01L2224/04105 ,  H01L2224/18 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/9222 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06551 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by creating a gap between semiconductor die on a wafer. An insulating material is deposited in the gap. A first portion of the insulating material is removed from a first side of the semiconductor wafer to form a first notch. The first notch is less than a thickness of the semiconductor die. A conductive material is deposited into the first notch to form a first portion of the conductive via within the gap. A second portion of the insulating material is removed from a second side of the semiconductor wafer to form a second notch. The second notch extends through the insulating material to the first notch. A conductive material is deposited into the second notch to form a second portion of the conductive via within the gap. The semiconductor wafer is singulated through the gap to separate the semiconductor die.

摘要翻译： 通过在晶片上形成半导体管芯之间的间隙来制造半导体器件。 绝缘材料沉积在间隙中。 从半导体晶片的第一侧去除绝缘材料的第一部分以形成第一凹口。 第一缺口小于半导体管芯的厚度。 导电材料沉积到第一凹口中以在间隙内形成导电通孔的第一部分。 从半导体晶片的第二侧去除绝缘材料的第二部分以形成第二凹口。 第二凹口延伸穿过绝缘材料到第一凹口。 导电材料沉积到第二凹口中以在间隙内形成导电通孔的第二部分。 半导体晶片通过间隙被分离，以分离半导体管芯。

公开(公告)号：US07659145B2

公开(公告)日：2010-02-09

申请号：US12172817

申请日：2008-07-14

申请人： Byung Tai Do ,  Heap Hoe Kuan ,  Reza A. Pagaila ,  Linda Pei Ee Chua

发明人： Byung Tai Do ,  Heap Hoe Kuan ,  Reza A. Pagaila ,  Linda Pei Ee Chua

IPC分类号： H01L21/00

CPC分类号： H01L24/82 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3114 ,  H01L24/19 ,  H01L24/24 ,  H01L24/48 ,  H01L2221/68345 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/82001 ,  H01L2224/82039 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor die has a peripheral region around the die. An insulating layer is formed over the semiconductor die. A portion of the insulating layer and peripheral is removed to form a recess around the semiconductor die. A conductive layer is deposited over the insulating layer and recess. The conductive layer is electrically connected to contact pads on the semiconductor die and conforms to a step into the recess. A gap is created through the conductive layer and peripheral region around the semiconductor die. An insulating material is deposited in the gap. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. The conductive THV is recessed with respect to a surface of the semiconductor die. The conductive THV is electrically connected to the conductive layer.

摘要翻译： 半导体管芯具有围绕管芯的周边区域。 在半导体管芯上形成绝缘层。 去除绝缘层和周边的一部分以在半导体管芯周围形成凹陷。 导电层沉积在绝缘层和凹部上。 导电层电连接到半导体管芯上的接触焊盘，并符合入凹槽的步骤。 通过半导体管芯周围的导电层和周边区域产生间隙。 绝缘材料沉积在间隙中。 绝缘材料的一部分被去除以形成通孔（THV）。 导电材料沉积在THV中以形成导电THV。 导电THV相对于半导体管芯的表面凹陷。 导电THV与导电层电连接。

公开(公告)号：US20090283870A1

公开(公告)日：2009-11-19

申请号：US12121682

申请日：2008-05-15

申请人： Reza A. Pagaila ,  Linda Pei Ee Chua ,  Byung Tai Do

发明人： Reza A. Pagaila ,  Linda Pei Ee Chua ,  Byung Tai Do

IPC分类号： H01L23/538 ,  H01L21/304

CPC分类号： H01L24/24 ,  H01L21/56 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/19 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/24137 ,  H01L2224/24226 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/82001 ,  H01L2225/0651 ,  H01L2225/06551 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by disposing a plurality of semiconductor die on a carrier and creating a gap between each of the semiconductor die. A first insulating material is deposited in the gap. A portion of the first insulating material is removed. A conductive layer is formed over the semiconductor die. A conductive lining is conformally formed on the remaining portion of the first insulating material to form conductive via within the gap. The conductive vias can be tapered or vertical. The conductive via is electrically connected to a contact pad on the semiconductor die. A second insulating material is deposited in the gap over the conductive lining. A portion of the conductive via may extend outside the first and second insulating materials. The semiconductor die are singulated through the gap. The semiconductor die can be stacked and interconnected through the conductive vias.

摘要翻译： 通过将多个半导体管芯设置在载体上并在每个半导体管芯之间产生间隙来制造半导体器件。 第一绝缘材料沉积在间隙中。 去除第一绝缘材料的一部分。 在半导体管芯上形成导电层。 在第一绝缘材料的剩余部分上保形地形成导电衬里，以在间隙内形成导电通孔。 导电通孔可以是锥形或垂直的。 导电通孔电连接到半导体管芯上的接触焊盘。 第二绝缘材料沉积在导电衬里上的间隙中。 导电通孔的一部分可以延伸到第一和第二绝缘材料的外部。 半导体管芯通过间隙被切割。 半导体管芯可以通过导电通孔堆叠和互连。

公开(公告)号：US07618846B1

公开(公告)日：2009-11-17

申请号：US12140092

申请日：2008-06-16

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Rui Huang

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Rui Huang

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L25/105 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/29 ,  H01L23/3114 ,  H01L23/552 ,  H01L24/19 ,  H01L24/20 ,  H01L24/48 ,  H01L24/82 ,  H01L24/96 ,  H01L2221/68345 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/12105 ,  H01L2224/48091 ,  H01L2224/48471 ,  H01L2224/73265 ,  H01L2224/85385 ,  H01L2225/06527 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device has a semiconductor die with a peripheral region around the die. A first insulating material is deposited in the peripheral region. A conductive via is formed through the first insulating material. A conductive layer is formed over the semiconductor die. The conductive layer is electrically connected between the conductive via and a contact pad of the semiconductor die. A second insulating layer is deposited over the first insulating layer, conductive layer, and semiconductor die. A profile is formed in the first and second insulating layers in the peripheral region. The profile is tapered, V-shaped, truncated V-shape, flat, or vertical. A shielding layer is formed over the first and second insulating layers to isolate the semiconductor die from inter-device interference. The shielding layer conforms to the profile in the peripheral region and electrically connects the shielding layer to the conductive via.

摘要翻译： 半导体器件具有半导体管芯，该半导体管芯具有围绕管芯的周边区域。 第一绝缘材料沉积在周边区域中。 通过第一绝缘材料形成导电通孔。 在半导体管芯上形成导电层。 导电层电连接在导电通孔和半导体管芯的接触焊盘之间。 在第一绝缘层，导电层和半导体管芯上沉积第二绝缘层。 在周边区域的第一绝缘层和第二绝缘层中形成轮廓。 型材呈锥形，V形，截头V形，扁平或垂直。 在第一绝缘层和第二绝缘层之上形成屏蔽层以将半导体管芯与器件间干扰隔离。 屏蔽层符合外围区域中的轮廓并将屏蔽层电连接到导电通孔。