公开(公告)号：US20250112136A1

公开(公告)日：2025-04-03

申请号：US18374937

申请日：2023-09-29

Applicant: Intel Corporation

Inventor： Bohan SHAN ,  Jesse JONES ,  Zhixin XIE ,  Bai NIE ,  Shaojiang CHEN ,  Joshua STACEY ,  Mitchell PAGE ,  Brandon C. MARIN ,  Jeremy D. ECTON ,  Nicholas S. HAEHN ,  Astitva TRIPATHI ,  Yuqin LI ,  Edvin CETEGEN ,  Jason M. GAMBA ,  Jacob VEHONSKY ,  Jianyong MO ,  Makoyi WATSON ,  Shripad GOKHALE ,  Mine KAYA ,  Kartik SRINIVASAN ,  Haobo CHEN ,  Ziyin LIN ,  Kyle ARRINGTON ,  Jose WAIMIN ,  Ryan CARRAZZONE ,  Hongxia FENG ,  Srinivas Venkata Ramanuja PIETAMBARAM ,  Gang DUAN ,  Dingying David XU ,  Hiroki TANAKA ,  Ashay DANI ,  Praveen SREERAMAGIRI ,  Yi LI ,  Ibrahim EL KHATIB ,  Aaron GARELICK ,  Robin MCREE ,  Hassan AJAMI ,  Yekan WANG ,  Andrew JIMENEZ ,  Jung Kyu HAN ,  Hanyu SONG ,  Yonggang Yong LI ,  Mahdi MOHAMMADIGHALENI ,  Whitney BRYKS ,  Shuqi LAI ,  Jieying KONG ,  Thomas HEATON ,  Dilan SENEVIRATNE ,  Yiqun BAI ,  Bin MU ,  Mohit GUPTA ,  Xiaoying GUO

IPC: H01L23/498 ,  H01L23/15

Abstract: Embodiments disclosed herein include apparatuses with glass core package substrates. In an embodiment, an apparatus comprises a substrate with a first surface and a second surface opposite from the first surface. A sidewall is between the first surface and the second surface, and the substrate comprises a glass layer. In an embodiment, a via is provided through the substrate between the first surface and the second surface, and the via is electrically conductive. In an embodiment, a layer in contact with the sidewall of the substrate surrounds a perimeter of the substrate.

公开(公告)号：US20240186251A1

公开(公告)日：2024-06-06

申请号：US18075360

申请日：2022-12-05

Applicant: Intel Corporation

Inventor： Minglu LIU ,  YANG WU ,  Yuting WANG ,  Lawrence ROSS ,  Mine KAYA ,  Gang DUAN ,  Edvin CETEGEN ,  Alexander AGUINAGA

IPC: H01L23/538 ,  H01L23/00 ,  H01L23/13 ,  H01L25/065

CPC classification number: H01L23/5381 ,  H01L23/13 ,  H01L23/5385 ,  H01L23/5386 ,  H01L24/16 ,  H01L25/0655 ,  H01L24/81 ,  H01L2224/16227 ,  H01L2224/81203 ,  H01L2924/351

Abstract: Embodiments disclosed herein include package architectures. In an embodiment, the package architecture comprises a package substrate, a first bridge in the package substrate, where the first bridge includes conductive routing, and a second bridge in the package substrate. In an embodiment, the package architecture further comprises a third bridge in the package substrate, where the second bridge and the third bridge are positioned symmetrically about the first bridge.

公开(公告)号：US20240136326A1

公开(公告)日：2024-04-25

申请号：US18399189

申请日：2023-12-28

Applicant: Intel Corporation

Inventor： Wei LI ,  Edvin CETEGEN ,  Nicholas S. HAEHN ,  Ram S. VISWANATH ,  Nicholas NEAL ,  Mitul MODI

IPC: H01L25/065 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498

CPC classification number: H01L25/0652 ,  H01L21/486 ,  H01L21/561 ,  H01L21/78 ,  H01L23/3128 ,  H01L23/49827 ,  H01L24/16 ,  H01L2224/16225

Abstract: Embodiments include semiconductor packages and a method to form such semiconductor packages. A semiconductor package includes a plurality of dies on a substrate, and an encapsulation layer over the substrate. The encapsulation layer surrounds the dies. The semiconductor package also includes a plurality of dummy silicon regions on the substrate. The dummy silicon regions surround the dies and encapsulation layer. The plurality of dummy silicon regions are positioned on two or more edges of the substrate. The dummy silicon regions have a top surface substantially coplanar to a top surface of the dies. The dummy silicon regions include materials that include silicon, metals, or highly-thermal conductive materials. The materials have a thermal conductivity of approximately 120 W/mK or greater, or is equal to or greater than the thermal conductivity of silicon. An underfill layer surrounds the substrate and the dies, where the encapsulation layer surrounds portions of the underfill layer.

公开(公告)号：US20210195798A1

公开(公告)日：2021-06-24

申请号：US16723865

申请日：2019-12-20

Applicant: Intel Corporation

Inventor： Nicholas NEAL ,  Nicholas S. HAEHN ,  Je-Young CHANG ,  Kyle ARRINGTON ,  Aaron MCCANN ,  Edvin CETEGEN ,  Ravindranath V. MAHAJAN ,  Robert L. SANKMAN ,  Ken P. HACKENBERG ,  Sergio A. CHAN ARGUEDAS

IPC: H05K7/20 ,  H01L23/367 ,  H01L23/00 ,  H01L23/498

Abstract: Embodiments include semiconductor packages. A semiconductor package includes dies on a package substrate, an integrated heat spreader (IHS) with a lid and sidewalls over the dies and package substrate, and a heatsink and a thermal interface material respectively on the IHS. The semiconductor package includes a vapor chamber defined by a surface of the package substrate and surfaces of the lid and sidewalls, and a wick layer in the vapor chamber. The wick layer is on the dies, package substrate, and IHS, where the vapor chamber has a vapor space defined by surfaces of the wick layer and lid of the IHS. The sidewalls are coupled to the package substrate with a sealant that hermetically seals the vapor chamber with the surfaces of the package substrate and the sidewalls and lid. The wick layer has a uniform or non-uniform thickness, and has porous materials including metals, powders, or graphite.

公开(公告)号：US20210066162A1

公开(公告)日：2021-03-04

申请号：US16557896

申请日：2019-08-30

Applicant: Intel Corporation

Inventor： Sergio A. CHAN ARGUEDAS ,  Nicholas S. HAEHN ,  Edvin CETEGEN ,  Nicholas NEAL ,  Jacob VEHONSKY ,  Steve S. CHO ,  Rahul JAIN ,  Antariksh Rao Pratap SINGH ,  Tarek A. IBRAHIM ,  Thomas HEATON ,  Vipul MEHTA

IPC: H01L23/42 ,  H01L23/00

Abstract: A device is disclosed. The device includes a substrate, a die on the substrate, a thermal interface material (TIM) on the die, and solder bumps on a periphery of a top surface of the substrate. An integrated heat spreader (IHS) is formed on the solder bumps. The IHS covers the TIM.

公开(公告)号：US20210020532A1

公开(公告)日：2021-01-21

申请号：US16511376

申请日：2019-07-15

Applicant: Intel Corporation

Inventor： Jacob VEHONSKY ,  Nicholas S. HAEHN ,  Thomas HEATON ,  Steve S. CHO ,  Rahul JAIN ,  Tarek IBRAHIM ,  Antariksh Rao Pratap SINGH ,  Edvin CETEGEN ,  Nicholas NEAL ,  Sergio CHAN ARGUEDAS

IPC: H01L23/16 ,  H01L23/498 ,  H01L23/00 ,  H01L23/367

Abstract: Embodiments disclosed herein include electronic packages and methods of forming such packages. In an embodiment an electronic package comprises a package substrate, and a first level interconnect (FLI) bump region on the package substrate. In an embodiment, the FLI bump region comprises a plurality of pads, and a plurality of bumps, where each bump is over a different one of the plurality of pads. In an embodiment, the electronic package further comprises a guard feature adjacent to the FLI bump region. In an embodiment, the guard feature comprises, a guard pad, and a guard bump over the guard pad, wherein the guard feature is electrically isolated from circuitry of the electronic package.

公开(公告)号：US20210020531A1

公开(公告)日：2021-01-21

申请号：US16511360

申请日：2019-07-15

Applicant: Intel Corporation

Inventor： Edvin CETEGEN ,  Jacob VEHONSKY ,  Nicholas S. HAEHN ,  Thomas HEATON ,  Steve S. CHO ,  Rahul JAIN ,  Tarek IBRAHIM ,  Antariksh Rao Pratap SINGH ,  Nicholas NEAL ,  Sergio CHAN ARGUEDAS ,  Vipul MEHTA

IPC: H01L23/16 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00 ,  H01L25/065

Abstract: Embodiments disclosed herein include electronic packages with underfill flow control features. In an embodiment, an electronic package comprises a package substrate and a plurality of interconnects on the package substrate. In an embodiment, a die is coupled to the package substrate by the plurality of interconnects and a flow control feature is adjacent on the package substrate. In an embodiment, the flow control feature is electrically isolated from circuitry of the electronic package. In an embodiment, the electronic package further comprises an underfill surrounding the plurality of interconnects and in contact with the flow control feature.

公开(公告)号：US20190304808A1

公开(公告)日：2019-10-03

申请号：US15942109

申请日：2018-03-30

Applicant: Intel Corporation

Inventor： Ziyin LIN ,  Vipul MEHTA ,  Edvin CETEGEN ,  Yuying WEI ,  Sushrutha GUJJULA ,  Nisha ANANTHAKRISHNAN ,  Shan ZHONG

IPC: H01L21/56 ,  H01L21/67 ,  H01L23/13 ,  H01L23/31 ,  H01L23/00

Abstract: A substrate protrusion is described. The substrate protrusion includes a top portion that extends in a first direction toward a gap between the first die and the second die and in a second direction parallel to the gap between the first die and the second die. The substrate protrusion also includes a base portion that is coupled to a substrate that extends underneath the first die and the second die.

公开(公告)号：US20250112174A1

公开(公告)日：2025-04-03

申请号：US18374618

申请日：2023-09-28

Applicant: Intel Corporation

Inventor： Siddarth KUMAR ,  Shripad GOKHALE ,  Edvin CETEGEN ,  Praneeth NAMPALLY ,  Astitva TRIPATHI ,  Sairam AGRAHARAM

IPC: H01L23/00 ,  H01L21/3205

Abstract: Embodiments herein relate to systems, apparatuses, techniques or processes for forming an annealed shape metal alloy (SMA) on a wafer or a die complex. In embodiments, the annealed SMA, when heated above a transition temperature, may enter an Austenite phase and return to the shape that the wafer or die complex had when it was annealed. In embodiments, this may maintain a shape of a wafer or a die complex during higher temperature processing, for example during reflow, when the package undergoes fabrication. Other embodiments may be described and/or claimed.

公开(公告)号：US20250112164A1

公开(公告)日：2025-04-03

申请号：US18374932

申请日：2023-09-29

Applicant: Intel Corporation

Inventor： Bohan SHAN ,  Onur OZKAN ,  Ryan CARRAZZONE ,  Rui ZHANG ,  Haobo CHEN ,  Ziyin LIN ,  Yiqun BAI ,  Kyle ARRINGTON ,  Jose WAIMIN ,  Hongxia FENG ,  Srinivas Venkata Ramanuja PIETAMBARAM ,  Gang DUAN ,  Dingying David XU ,  Bin MU ,  Mohit GUPTA ,  Jeremy D. ECTON ,  Brandon C. MARIN ,  Xiaoying GUO ,  Steve S. CHO ,  Ali LEHAF ,  Venkata Rajesh SARANAM ,  Shripad GOKHALE ,  Kartik SRINIVASAN ,  Edvin CETEGEN ,  Mine KAYA ,  Nicholas S. HAEHN ,  Deniz TURAN

IPC: H01L23/538 ,  H01L21/48 ,  H01L23/00 ,  H01L25/065

Abstract: A device comprises a substrate comprising a plurality of build-up layers and a cavity. A bridge die is located within the cavity and a plurality of cavity side bumps are on one side of the bridge die. A plurality of interconnect pads with variable heights are on one of the build-up layers of the substrate coupled to the plurality of the cavity side bumps to bond the bridge die to the substrate.