公开(公告)号：US20150115220A1

公开(公告)日：2015-04-30

申请号：US14511966

申请日：2014-10-10

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Michael Iza ,  James S. Speck ,  Shuji Nakamura ,  Steven P. DenBaars

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/42 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/12 ,  H01L33/007 ,  H01L33/04

Abstract: A nitride light emitting diode comprising at least one nitride-based active region formed on or above a patterned substrate, wherein the active region is comprised of at least one quantum well structure; and a nitride interlayer, formed on or above the active region, having at least two periods of alternating layers of InxGa1-xN and InyGa1-yN, where 0

Abstract translation: 一种氮化物发光二极管，包括形成在图案化衬底上或上面的至少一个氮化物基有源区，其中所述有源区由至少一个量子阱结构构成; 以及在有源区上或上方形成的具有In x Ga 1-x N和In y Ga 1-y N的交替层的至少两个周期的氮化物中间层，其中0

公开(公告)号：US20140291694A1

公开(公告)日：2014-10-02

申请号：US14305734

申请日：2014-06-16

Applicant: The regents of The University of California

Inventor： Asako Hirai ,  Zhongyuan Jia ,  Makoto Saito ,  Hisashi Yamada ,  Kenji Iso ,  Steven P. DenBaars ,  Shuji Nakamura ,  James S. Speck

IPC: C30B23/02 ,  H01L31/0304 ,  H01L33/16 ,  C30B25/18 ,  H01L33/00 ,  H01L31/18 ,  H01L21/02 ,  C30B23/06 ,  H01L31/036 ,  H01L33/32

CPC classification number: C30B29/406 ,  C30B23/025 ,  C30B23/066 ,  C30B25/18 ,  C30B25/186 ,  C30B25/20 ,  C30B29/403 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02617 ,  H01L21/02636 ,  H01L29/04 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/26 ,  H01L31/03044 ,  H01L31/036 ,  H01L31/1856 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01S5/34333 ,  Y10T428/24612

Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.

Abstract translation: 提供了为了抑制表面波动而在衬底的错误角度上生长的非极性III族氮化物膜。 膜的表面形态通过朝向a轴方向的误差角而改进，包括朝向a轴方向的0.15°或更大的误差角和朝向a轴方向的小于30°的倾斜角。

公开(公告)号：US08791000B2

公开(公告)日：2014-07-29

申请号：US14164434

申请日：2014-01-27

Applicant: The Regents of the University of California

Inventor： Asako Hirai ,  Zhongyuan Jia ,  Makoto Saito ,  Hisashi Yamada ,  Kenji Iso ,  Steven P. DenBaars ,  Shuji Nakamura ,  James S. Speck

IPC: H01L21/20

CPC classification number: C30B29/406 ,  C30B23/025 ,  C30B23/066 ,  C30B25/18 ,  C30B25/186 ,  C30B25/20 ,  C30B29/403 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02617 ,  H01L21/02636 ,  H01L29/04 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/26 ,  H01L31/03044 ,  H01L31/036 ,  H01L31/1856 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01S5/34333 ,  Y10T428/24612

Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.

Abstract translation: 提供了为了抑制表面波动而在衬底的错误角度上生长的非极性III族氮化物膜。 膜的表面形态通过朝向a轴方向的误差角而改进，包括朝向a轴方向的0.15°或更大的误差角和朝向a轴方向的小于30°的倾斜角。

公开(公告)号：US20130069088A1

公开(公告)日：2013-03-21

申请号：US13623472

申请日：2012-09-20

Applicant: The Regents of the University of California

Inventor： James S. Speck ,  Claude C. A. Weisbuch ,  Nathan Pfaff ,  Leah Kuritzky ,  Christopher Lalau Keraly

IPC: H01L33/08 ,  H01L33/48 ,  H01L33/50

CPC classification number: H01L33/385 ,  H01L33/507 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2924/0002 ,  H01L2924/10155 ,  H01L2924/00

Abstract: An optoelectronic device (e.g., LED) comprising one or more conformal surface electrical contacts conforming to surfaces of the device; and a high refractive index glass partially or totally encapsulating the device and the conformal surface electrical contacts, wherein traditional wire bonds and/or bond pads are not used and the glass is a primary encapsulant for the device.

Abstract translation: 包括符合设备表面的一个或多个保形表面电触头的光电器件（例如，LED） 以及高折射率玻璃，其部分或全部包封该器件和共形表面电触点，其中不使用传统的引线键合和/或接合焊盘，并且该玻璃是该器件的主要密封剂。

公开(公告)号：US11552452B2

公开(公告)日：2023-01-10

申请号：US15880999

申请日：2018-01-26

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Po Shan Hsu ,  Kathryn M. Kelchner ,  Robert M. Farrell ,  Daniel A. Haeger ,  Hiroaki Ohta ,  Anurag Tyagi ,  Shuji Nakamura ,  Steven P. DenBaars ,  James S. Speck

IPC: H01S5/00 ,  H01S5/343 ,  B82Y20/00 ,  H01L21/02 ,  H01S5/32 ,  H01L31/0304 ,  H01L31/036 ,  H01L31/0735 ,  H01L33/00 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32 ,  H01S5/20 ,  H01S5/22 ,  H01S5/30 ,  H01S5/34

Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15

公开(公告)号：US10685835B2

公开(公告)日：2020-06-16

申请号：US15773864

申请日：2016-11-01

Applicant: The Regents of the University of California

Inventor： Benjamin P. Yonkee ,  Erin C. Young ,  John T. Leonard ,  Tal Margalith ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L21/00 ,  H01L29/00 ,  H01L31/18 ,  H01L33/00 ,  H01L21/02 ,  H01L29/15 ,  H01L29/20 ,  H01L29/207 ,  H01L29/36 ,  H01L29/885 ,  H01L31/0304 ,  H01L31/0352 ,  H01L33/06 ,  H01L33/32 ,  H01L29/88 ,  H01L33/04

Abstract: A III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer to reduce tunneling resistance. The delta-doped layer may be doped using donor atoms comprised of Oxygen (O), Germanium (Ge) or Silicon (Si); acceptor atoms comprised of Magnesium (Mg) or Zinc (Zn); or impurities comprised of Iron (Fe) or Carbon (C).

公开(公告)号：US20150372456A1

公开(公告)日：2015-12-24

申请号：US14766924

申请日：2014-02-13

Applicant: Arash POURHASHEMI ,  Robert M. FARRELL ,  Steven P. DENBAARS ,  James S. SPECK ,  Shuji NAKAMURA ,  THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Arash Pourhashemi ,  Robert M. Farrell ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01S5/343 ,  H01S5/02 ,  H01S5/40 ,  H01S5/32 ,  H01S5/30

CPC classification number: H01S5/34333 ,  H01S5/0217 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/4025 ,  H01S2304/12

Abstract: A high power blue-violet Ill-nitride semi-polar laser diode (LD) with an output power in excess of 1 W, a slope efficiency of more than 1 W/A, and an external quantum efficiency (EQE) in excess of 25% and more preferably, in excess of 35%. These operating characteristics make these laser diodes suitable for use in solid state lighting systems.

Abstract translation: 输出功率超过1 W，斜率效率大于1 W / A，外部量子效率（EQE）超过25的高功率蓝紫色III族氮化物半极性激光二极管（LD） ％，更优选超过35％。 这些工作特性使这些激光二极管适用于固态照明系统。

公开(公告)号：US20150255959A1

公开(公告)日：2015-09-10

申请号：US14721729

申请日：2015-05-26

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Po Shan Hsu ,  Kathryn M. Kelchner ,  Robert M. Farrell ,  Daniel A. Haeger ,  Hiroaki Ohta ,  Anurag Tyagi ,  Shuji Nakamura ,  Steven P. DenBaars ,  James S. Speck

IPC: H01S5/343 ,  H01L33/00 ,  H01L33/16 ,  H01S5/20 ,  H01L31/0735 ,  H01L31/036 ,  H01L31/0304 ,  H01S5/32 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02609 ,  H01L31/03044 ,  H01L31/036 ,  H01L31/0735 ,  H01L33/0025 ,  H01L33/0045 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3404 ,  H01S2304/04

Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15

Abstract translation: 在杂交GaN上生长的光电子器件，其中杂交包括GaN的半极性GaN晶体平面（从GaN的m面）和GaN的c方向偏离x度，其中-15

公开(公告)号：US20140126200A1

公开(公告)日：2014-05-08

申请号：US14066012

申请日：2013-10-29

Applicant: The Regents of the University of California

Inventor： Kathryn M. Kelchner ,  James S. Speck ,  Nathan A. Pfaff ,  Steven P. DenBaars

IPC: F21K99/00

CPC classification number: F21K9/64 ,  F21K9/90

Abstract: A white light source employing a III-nitride based laser diode pumping one or more phosphors. The III-nitride laser diode emits light in a first wavelength range that is down-converted to light in a second wavelength range by the phosphors, wherein the light in the first wavelength range is combined with the light in the second wavelength range to create highly directional white light. The light in the first wavelength range comprises ultraviolet, violet, blue and/or green light, while the light in the second wavelength range comprises green, yellow and/or red light.

Abstract translation: 采用驱动一种或多种磷光体的III族氮化物基激光二极管的白光源。 III族氮化物激光二极管发射第一波长范围的光，该第一波长范围通过磷光体下转换成第二波长范围内的光，其中第一波长范围内的光与第二波长范围内的光组合以产生高度 定向白光。 第一波长范围内的光包括紫外线，紫色，蓝色和/或绿色光，而第二波长范围内的光包括绿色，黄色和/或红色光。

公开(公告)号：US20140023102A1

公开(公告)日：2014-01-23

申请号：US13947755

申请日：2013-07-22

Applicant: The Regents of the University of California

Inventor： Casey O. Holder ,  Daniel F. Feezell ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01S5/10 ,  H01S5/183

CPC classification number: H01S5/18355 ,  B82Y20/00 ,  H01S5/005 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/0654 ,  H01S5/1039 ,  H01S5/183 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/2009 ,  H01S5/209 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/423 ,  H01S2301/176

Abstract: A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching.

Abstract translation: 基于III-Nitride的垂直腔表面发射激光器（VCSEL），其中通过蚀刻来控制VCSEL的腔长度。