公开(公告)号：US20160194781A1

公开(公告)日：2016-07-07

申请号：US14909926

申请日：2014-08-29

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Siddha Pimputkar ,  Shuji Nakamura ,  James S. Speck

IPC: C30B7/10 ,  C30B29/40 ,  C30B9/12

CPC classification number: C30B7/105 ,  C30B9/12 ,  C30B29/403 ,  C30B35/002

Abstract: A method and apparatus for growing a Group-III nitride crystal using multiple interconnected reactor vessels to modify growth conditions during the ammonothermal growth of the Group-III nitride crystal, such that, by combining two or more vessels, it is possible to modify the conditions under which the Group-III nitride crystals are grown. In addition, the reactor vessel may use carbon fiber containing materials encapsulating oxide ceramic materials as structural elements to contain the materials for growing the Group-III nitride crystals at pressures or temperatures necessary for growth of the Group-III nitride crystals.

Abstract translation: 一种使用多个互连的反应器容器生长III族氮化物晶体以在III族氮化物晶体的氨热生长期间改变生长条件的方法和装置，使得通过组合两个或更多个容器，可以修改条件 其中III族氮化物晶体生长。 此外，反应器容器可以使用包含氧化物陶瓷材料的碳纤维的材料作为结构元件，以容纳用于在III族氮化物晶体生长所需的压力或温度下生长III族氮化物晶体的材料。

公开(公告)号：US20160079499A1

公开(公告)日：2016-03-17

申请号：US14947244

申请日：2015-11-20

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Frederic S. Diana ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/60 ,  H01L33/32 ,  H01L33/50

CPC classification number: H01L33/60 ,  F21K9/64 ,  H01L33/32 ,  H01L33/46 ,  H01L33/483 ,  H01L33/50 ,  H01L33/504 ,  H01L33/505 ,  H01L33/507 ,  H01L33/58 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/19107 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for increasing the luminous efficacy of a white light emitting diode (WLED), comprising introducing optically functional interfaces between an LED die and a phosphor, and between the phosphor and an outer medium, wherein at least one of the interfaces between the phosphor and the LED die provides a reflectance for light emitted by the phosphor away from the outer medium and a transmittance for light emitted by the LED die. Thus, a WLED may comprise a first material which surrounds an LED die, a phosphor layer, and at least one additional layer or material which is transparent for direct LED emission and reflective for the phosphor emission, placed between the phosphor layer and the first material which surrounds the LED die.

公开(公告)号：US20150115220A1

公开(公告)日：2015-04-30

申请号：US14511966

申请日：2014-10-10

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Michael Iza ,  James S. Speck ,  Shuji Nakamura ,  Steven P. DenBaars

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/42 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/12 ,  H01L33/007 ,  H01L33/04

Abstract: A nitride light emitting diode comprising at least one nitride-based active region formed on or above a patterned substrate, wherein the active region is comprised of at least one quantum well structure; and a nitride interlayer, formed on or above the active region, having at least two periods of alternating layers of InxGa1-xN and InyGa1-yN, where 0

Abstract translation: 一种氮化物发光二极管，包括形成在图案化衬底上或上面的至少一个氮化物基有源区，其中所述有源区由至少一个量子阱结构构成; 以及在有源区上或上方形成的具有In x Ga 1-x N和In y Ga 1-y N的交替层的至少两个周期的氮化物中间层，其中0

公开(公告)号：US20150092386A1

公开(公告)日：2015-04-02

申请号：US14567889

申请日：2014-12-11

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Natalie N. Fellows-DeMille ,  Hisashi Masui ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: F21K99/00 ,  F21V9/10 ,  F21V9/08 ,  H01L33/00 ,  H01S5/343 ,  H01L33/50 ,  H01L33/58 ,  H01L25/075 ,  H01S5/00 ,  F21V9/14 ,  H01L33/32

CPC classification number: F21K9/65 ,  F21V9/08 ,  F21V9/14 ,  F21V9/40 ,  F21Y2115/10 ,  F21Y2115/30 ,  H01L25/0753 ,  H01L33/0045 ,  H01L33/16 ,  H01L33/32 ,  H01L33/50 ,  H01L33/507 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01S5/005 ,  H01S5/34333 ,  H01L2924/00

Abstract: A lighting apparatus for emitting polarized white light, which includes at least a first light source for emitting primary light comprised of one or more first wavelengths and having a first polarization direction; and at least a second light source for emitting secondary light in the first polarization direction, comprised of one or more secondary wavelengths, wherein the first light and the secondary light are combined to produce a polarized white light. The lighting apparatus may further comprise a polarizer for controlling the primary light's intensity, wherein a rotation of the polarizer varies an alignment of its polarization axis with respect to the first polarization direction, which varies transmission of the primary light through the polarizer, which controls a color co-ordinate or hue of the white light.

Abstract translation: 一种用于发射偏振白光的照明装置，其至少包括用于发射由一个或多个第一波长组成并具有第一偏振方向的初级光的第一光源; 以及至少第二光源，用于发射第一偏振方向的二次光，其包括一个或多个次级波长，其中第一光和次级光被组合以产生偏振的白光。 照明装置还可以包括用于控制初级光的强度的偏振器，其中偏振器的旋转改变其偏振轴相对于第一偏振方向的对准，其改变通过偏振器的初级光的透射，其控制 颜色坐标或白光的色相。

公开(公告)号：US20150048381A1

公开(公告)日：2015-02-19

申请号：US14493099

申请日：2014-09-22

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Casey O. Holder ,  Daniel F. Feezell ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L29/20 ,  H01S5/343 ,  H01L21/3063 ,  H01S5/183 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01L21/7813 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/30612 ,  H01L21/30635 ,  H01L29/2003 ,  H01L31/03044 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/32 ,  H01S5/0217 ,  H01S5/183 ,  H01S5/18341 ,  H01S5/18347 ,  H01S5/187 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.

Abstract translation: 氮化镓（GaN）外延衬底的再利用方法使用带隙选择性光电化学（PEC）蚀刻从体积或独立的GaN衬底去除一个或多个外延层而不损坏衬底，允许衬底被再次使用 用于进一步生长附加的外延层。 该方法通过允许重新使用昂贵的体积或独立的GaN衬底而有助于器件生产的显着降低成本。

公开(公告)号：US20140291694A1

公开(公告)日：2014-10-02

申请号：US14305734

申请日：2014-06-16

Applicant: The regents of The University of California

Inventor： Asako Hirai ,  Zhongyuan Jia ,  Makoto Saito ,  Hisashi Yamada ,  Kenji Iso ,  Steven P. DenBaars ,  Shuji Nakamura ,  James S. Speck

IPC: C30B23/02 ,  H01L31/0304 ,  H01L33/16 ,  C30B25/18 ,  H01L33/00 ,  H01L31/18 ,  H01L21/02 ,  C30B23/06 ,  H01L31/036 ,  H01L33/32

CPC classification number: C30B29/406 ,  C30B23/025 ,  C30B23/066 ,  C30B25/18 ,  C30B25/186 ,  C30B25/20 ,  C30B29/403 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02617 ,  H01L21/02636 ,  H01L29/04 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/26 ,  H01L31/03044 ,  H01L31/036 ,  H01L31/1856 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01S5/34333 ,  Y10T428/24612

Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.

Abstract translation: 提供了为了抑制表面波动而在衬底的错误角度上生长的非极性III族氮化物膜。 膜的表面形态通过朝向a轴方向的误差角而改进，包括朝向a轴方向的0.15°或更大的误差角和朝向a轴方向的小于30°的倾斜角。

公开(公告)号：US08791000B2

公开(公告)日：2014-07-29

申请号：US14164434

申请日：2014-01-27

Applicant: The Regents of the University of California

Inventor： Asako Hirai ,  Zhongyuan Jia ,  Makoto Saito ,  Hisashi Yamada ,  Kenji Iso ,  Steven P. DenBaars ,  Shuji Nakamura ,  James S. Speck

IPC: H01L21/20

CPC classification number: C30B29/406 ,  C30B23/025 ,  C30B23/066 ,  C30B25/18 ,  C30B25/186 ,  C30B25/20 ,  C30B29/403 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02617 ,  H01L21/02636 ,  H01L29/04 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/26 ,  H01L31/03044 ,  H01L31/036 ,  H01L31/1856 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01S5/34333 ,  Y10T428/24612

Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.

Abstract translation: 提供了为了抑制表面波动而在衬底的错误角度上生长的非极性III族氮化物膜。 膜的表面形态通过朝向a轴方向的误差角而改进，包括朝向a轴方向的0.15°或更大的误差角和朝向a轴方向的小于30°的倾斜角。

公开(公告)号：US20130328012A1

公开(公告)日：2013-12-12

申请号：US13970046

申请日：2013-08-19

Applicant: The Regents of the University of California

Inventor： Jacob J. Richardson ,  Daniel B. Thompson ,  Ingrid Koslow ,  Jun-Seok Ha ,  Frederick F. Lange ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/28

CPC classification number: H01L33/44 ,  H01L21/288 ,  H01L33/007 ,  H01L33/14 ,  H01L33/28 ,  H01L33/32 ,  H01L33/40

Abstract: A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.

Abstract translation: 一种制备具有改进的光提取效率的发光二极管的方法，包括通过从水溶液中生长ZnO纳米棒，在III-氮化物基LED的一个或多个表面上沉积多个氧化锌（ZnO）纳米棒，其中 表面与III型氮化物的c面不同，透过LED产生的光。

公开(公告)号：US20240413610A1

公开(公告)日：2024-12-12

申请号：US18699439

申请日：2022-10-24

Applicant: The Regents of the University of California

Inventor： Srinivas Gandrothula ,  Shuji Nakamura ,  Steven P. DenBaars

IPC: H01S5/183 ,  H01S5/02 ,  H01S5/30

Abstract: Methods for fabricating a vertical cavity surface emitting laser (VCSEL) using epitaxial lateral overgrowth (ELO). The ELO layers comprise island-like III-nitride semiconductor layers grown on a substrate using a growth restrict mask, wherein the island-like III-nitride semiconductor layers comprise a light emitting resonant cavity. An aperture for the resonant cavity is fabricated on a wing of the ELO layers with distributed Bragg reflector (DBR) mirrors formed on bottom and top regions of the wing of the ELO layers.

公开(公告)号：US20240405158A1

公开(公告)日：2024-12-05

申请号：US18701367

申请日：2022-10-28

Applicant: The Regents of the University of California

Inventor： Srinivas Gandrothula ,  Shuji Nakamura ,  Steven P. DenBaars

IPC: H01L33/10 ,  H01L33/00 ,  H01L33/22

Abstract: A method for fabricating epitaxial light control features, without reactive ion etching or wet etching, when active layers are included. The epitaxial light control features comprise light extraction or guiding structures integrated on an epitaxial layer of a light emitting device such as a light emitting diode. The light extraction or guiding structures are fabricated on the epitaxial layer using an epitaxial lateral overgrowth (ELO) technique. The epitaxial light control features can have many different shapes and can be fabricated with standard processing techniques, making them highly manufacturable at costs similar to standard processing techniques.