公开(公告)号：US10002686B2

公开(公告)日：2018-06-19

申请号：US15124530

申请日：2015-03-09

申请人： THE UNIVERSITY OF CONNECTICUT

发明人： Gregory Sotzing ,  Douglas Adamson ,  Steven Woltornist ,  Fahad Alamer

IPC分类号： H01B1/24 ,  B32B27/12 ,  B32B5/02 ,  H01B1/12

CPC分类号： H01B1/24 ,  B32B5/022 ,  B32B5/024 ,  B32B27/12 ,  B32B2255/02 ,  B32B2255/26 ,  B32B2262/0253 ,  B32B2262/0261 ,  B32B2262/0276 ,  B32B2262/0292 ,  B32B2264/102 ,  B32B2264/108 ,  B32B2307/202 ,  B32B2307/412 ,  B32B2457/00 ,  H01B1/127

摘要： A method of infusing fibrous substrates with conductive organic particles (e.g. graphene/graphite) and conductive polymer, and the resulting electrically conductive fibrous substrates prepared therefrom are disclosed. All organic electrically conductive fibrous substrates prepared from synthetic fibrous substrates, graphene/graphite, and conductive polymer have been prepared having high electrical conductivity.

公开(公告)号：US09808520B1

公开(公告)日：2017-11-07

申请号：US15200407

申请日：2016-07-01

申请人： The United States of America, as Represented by the Secretary of Agriculture ,  The University of Connecticut

发明人： Manuel V. Borca ,  Douglas P. Gladue ,  Lauren G. Holinka-Patterson ,  Guillermo R. Risatti ,  Vivian K. O'Donnell

IPC分类号： A61K39/12 ,  C12Q1/70 ,  G01N33/569 ,  C12N7/00 ,  A61K39/00

CPC分类号： A61K39/12 ,  C12N7/00 ,  C12N2710/12021 ,  C12N2710/12034 ,  C12N2710/12062 ,  C12N2710/12071 ,  C12Q1/701 ,  G01N33/56983 ,  G01N2333/01

摘要： African swine fever virus (ASFV) is the etiological agent of a contagious, often lethal viral disease of domestic pigs. The control of African Swine Fever (ASF) has been hampered by the unavailability of vaccines. Experimental vaccines have been derived from naturally occurring, cell culture-adapted, or genetically modified live attenuated ASFVs; however, these vaccines are only successful when protecting against homologous viruses. We have constructed a recombinant Δ9GL/ΔUK virus derived from the highly virulent ASFV Georgia 2007 (ASFV-G) isolate by deleting the specific virulence-associated 9GL (B119L) and the UK (DP96R) genes. In vivo, ASFV-G Δ9GL/ΔUK administered intramuscularly to swine even at relatively high doses (106 HAD50) does not induce disease. Importantly, animals infected with 104 or 106 HAD50 are solidly protected against the presentation of clinical disease when challenged at 28 days post infection with the virulent parental strain Georgia 2007.

公开(公告)号：US20170222400A1

公开(公告)日：2017-08-03

申请号：US15450400

申请日：2017-03-06

申请人： THE UNIVERSITY OF CONNECTICUT ,  Opel Solar, Inc.

发明人： Geoff W. TAYLOR

IPC分类号： H01S5/10 ,  G02B6/134 ,  G02B6/13 ,  H01S5/042 ,  H01S5/062 ,  H01L31/18 ,  H01S5/30 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/112 ,  H01L31/11 ,  H01L31/0232 ,  G02B6/293 ,  H01S5/20

CPC分类号： H01S5/1071 ,  G02B6/131 ,  G02B6/1347 ,  G02B6/29338 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/085 ,  H01L27/1443 ,  H01L29/083 ,  H01L29/1066 ,  H01L29/15 ,  H01L29/36 ,  H01L29/66401 ,  H01L29/74 ,  H01L29/7783 ,  H01L31/02327 ,  H01L31/03046 ,  H01L31/035209 ,  H01L31/035236 ,  H01L31/1105 ,  H01L31/1113 ,  H01L31/1129 ,  H01L31/1844 ,  H01L33/06 ,  H01L33/105 ,  H01S5/0228 ,  H01S5/0421 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/06203 ,  H01S5/06226 ,  H01S5/0625 ,  H01S5/1028 ,  H01S5/1032 ,  H01S5/1042 ,  H01S5/1075 ,  H01S5/125 ,  H01S5/183 ,  H01S5/187 ,  H01S5/2027 ,  H01S5/2063 ,  H01S5/2086 ,  H01S5/222 ,  H01S5/3054 ,  H01S5/309 ,  H01S5/34313

摘要： A semiconductor device includes an n-type ohmic contact layer, cathode and anode electrodes, p-type and n-type modulation doped quantum well (QW) structures, and first and second ion implant regions. The anode electrode is formed on the first ion implant region that contacts the p-type modulation doped QW structure and the cathode electrode is formed by patterning the first and second ion implant regions and the n-type ohmic contact layer. The semiconductor device is configured to operate as at least one of a diode laser and a diode detector. As the diode laser, the semiconductor device emits photons. As the diode detector, the semiconductor device receives an input optical light and generates a photocurrent.

公开(公告)号：US09590136B2

公开(公告)日：2017-03-07

申请号：US14736624

申请日：2015-06-11

申请人： Opel Solar, Inc. ,  The University of Connecticut

发明人： Geoff W. Taylor

IPC分类号： H01L29/06 ,  H01L31/102 ,  H01L21/02 ,  H01L21/70 ,  H01L33/00 ,  H01L33/02 ,  H01L33/04

CPC分类号： H01L33/0062 ,  H01L29/0653 ,  H01L29/0843 ,  H01L29/1075 ,  H01L29/452 ,  H01L29/7783 ,  H01L33/0025 ,  H01L33/0041 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/04 ,  H01L33/06 ,  H01L33/10 ,  H01S5/06203 ,  H01S5/183 ,  H01S5/3086 ,  H01S5/343

摘要： A semiconductor device includes a series of layers formed on a substrate, including a first plurality of n-type layers, a second plurality of layers that form a p-type modulation doped quantum well structure (MDQWS), a third plurality of layers disposed between the p-type MDQWS and a fourth plurality of layers that form an n-type MDQWS, and a fifth plurality of p-type layers. The first plurality of layers includes a first etch stop layer of n-type formed on an n-type contact layer. The third plurality of layers includes a second etch stop layer formed above the p-type MDQWS and a third etch stop layer formed above and offset from the second etch stop layer. The fifth plurality of layers includes a fourth etch stop layer of p-type formed above the n-type MDQWS and a fifth etch stop layer of p-type doping formed above and offset from the fourth etch stop layer.

摘要翻译： 半导体器件包括形成在衬底上的一系列层，包括第一多个n型层，形成p型调制掺杂量子阱结构（MDQWS）的第二多个层，第三多个层， p型MDQWS和形成n型MDQWS的第四多层，以及第五多个p型层。 第一多个层包括在n型接触层上形成的n型第一蚀刻停止层。 第三多层包括形成在p型MDQWS上方的第二蚀刻停止层和形成在第二蚀刻停止层上方并偏移的第三蚀刻停止层。 第五多层包括形成在n型MDQWS上方的p型第四蚀刻停止层，以及在第四蚀刻停止层上方形成并偏移的p型掺杂的第五蚀刻停止层。

公开(公告)号：US09490321B2

公开(公告)日：2016-11-08

申请号：US14549369

申请日：2014-11-20

申请人： The University of Connecticut ,  Opel Solar, Inc.

发明人： Geoff W. Taylor

IPC分类号： H01S5/00 ,  H01L29/06 ,  H01S5/34 ,  H01L21/02 ,  H01L29/12 ,  H01L29/15 ,  H01S5/026 ,  H01S5/062 ,  H01S5/30 ,  G02B6/125 ,  B82Y10/00 ,  H01L27/144 ,  H01L27/15 ,  H01L31/0352 ,  H01L31/18 ,  H01L33/00 ,  H01L33/06 ,  H01L29/66 ,  H01L29/778 ,  H01S5/183

CPC分类号： H01L29/0688 ,  B82Y10/00 ,  G02B6/125 ,  H01L21/0259 ,  H01L27/144 ,  H01L27/15 ,  H01L29/0665 ,  H01L29/122 ,  H01L29/127 ,  H01L29/155 ,  H01L29/66977 ,  H01L29/7786 ,  H01L31/035218 ,  H01L31/035236 ,  H01L31/18 ,  H01L33/005 ,  H01L33/06 ,  H01S5/026 ,  H01S5/06203 ,  H01S5/18358 ,  H01S5/309 ,  H01S5/34 ,  H01S5/3412

摘要： A semiconductor device includes a substrate supporting a plurality of layers that include at least one modulation doped quantum well (QW) structure offset from a quantum dot in quantum well (QD-in-QW) structure. The modulation doped QW structure includes a charge sheet spaced from at least one QW by a spacer layer. The QD-in-QW structure has QDs embedded in one or more QWs. The QD-in-QW structure can include at least one template/emission substructure pair separated by a barrier layer, the template substructure having smaller size QDs than the emission substructure. A plurality of QD-in-QW structures can be provided to support the processing (emission, absorption, amplification) of electromagnetic radiation of different characteristic wavelengths (such as optical wavelengths in range from 1300 nm to 1550 nm). The device can realize an integrated circuit including a wide variety of devices that process electromagnetic radiation at a characteristic wavelength(s) supported by the QDs of the QD-in-QW structure(s). Other semiconductor devices are also described and claimed.

公开(公告)号：US20160287534A1

公开(公告)日：2016-10-06

申请号：US14676624

申请日：2015-04-01

申请人： Ji-Young Lee

发明人： Ji-Young Lee

IPC分类号： A61K31/122

CPC分类号： A61K31/122

摘要： The present invention provides methods of reversing the activation of hepatic stellate cells using astaxanthin (ASTX), or a pharmaceutically acceptable salt thereof, for use in the reversal of fibrosis and fibrotic diseases.

摘要翻译： 本发明提供使用虾青素（ASTX）或其药学上可接受的盐来逆转肝星状细胞的活化用于逆转纤维化和纤维化疾病的方法。

公开(公告)号：US09450124B1

公开(公告)日：2016-09-20

申请号：US14736494

申请日：2015-06-11

申请人： Opel Solar, Inc. ,  The University of Connecticut

发明人： Geoff W. Taylor

IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L31/0352 ,  H01L21/8249 ,  H01L29/66 ,  H01L21/3213 ,  H01L31/18 ,  H01S5/343 ,  H01S5/026 ,  H01L27/144 ,  H01L29/417 ,  H01L31/0232 ,  H01S5/22 ,  H01S5/20 ,  H01L21/265 ,  H01L29/45

CPC分类号： H01L31/035236 ,  H01L21/2654 ,  H01L21/32133 ,  H01L21/32135 ,  H01L27/1443 ,  H01L29/0653 ,  H01L29/0843 ,  H01L29/1075 ,  H01L29/41708 ,  H01L29/41716 ,  H01L29/452 ,  H01L29/66363 ,  H01L29/66371 ,  H01L29/66401 ,  H01L29/7404 ,  H01L29/7783 ,  H01S5/06203

摘要： A method of forming an integrated circuit employs a plurality of layers supported on a substrate that include i) n-type contact layer, ii) a p-type modulation doped quantum well structure (MDQWS) above the n-type contact layer, iii) n-type MDQWS above the p-type MDQWS, and iv) p-type contact layer(s) above the n-type MDQWS. A feature for a thyristor is defined by a mesa at the p-type contact layer of iv). A first layer of metal is deposited on the feature, which is then etched for at least one other device. Additional layer(s) of metal is deposited on the feature to form cumulative metal layers, which are etched away to form a set of mesas and corresponding electrodes for the thyristor. The cumulative metal layers that cover the feature and contact the mesa at the p-type contact layer of iv) are patterned to form an anode electrode of the thyristor.

摘要翻译： 形成集成电路的方法采用支撑在基板上的多个层，其包括i）n型接触层，ii）n型接触层上方的p型调制掺杂量子阱结构（MDQWS），iii） n型MDQWS在p型MDQWS之上，以及iv）p型接触层在n型MDQWS之上。 晶闸管的特征由iv）的p型接触层的台面限定。 第一层金属沉积在特征上，然后将其蚀刻至少一个其它器件。 附加的金属层沉积在特征上以形成累积的金属层，其被蚀刻掉以形成用于晶闸管的一组台面和相应的电极。 图案化覆盖该特征并接触iv）的p型接触层的台面的累积金属层，形成晶闸管的阳极电极。

公开(公告)号：US20160182024A1

公开(公告)日：2016-06-23

申请号：US14578893

申请日：2014-12-22

申请人： Opel Solar, Inc. ,  The University of Connecticut

发明人： Geoff W. Taylor

IPC分类号： H03K3/42 ,  H03K3/356 ,  H03K3/352

CPC分类号： H03K3/42 ,  H03K3/352 ,  H03K3/356

摘要： An optical flip-flop circuit that includes an optical thyristor configured to receive a digital optical signal input and produce a digital signal output based on the ON/OFF state of the digital optical signal input. The optical flip-flop circuit further includes control circuitry operably coupled to the terminals of the optical thyristor. The control circuitry is configured to control switching operation of the optical thyristor in response to the level of a digital electrical signal input.

摘要翻译： 一种光学触发器电路，包括配置成接收数字光信号输入并基于数字光信号输入的ON / OFF状态产生数字信号输出的光晶闸管。 光学触发器电路还包括可操作地耦合到光学晶闸管的端子的控制电路。 控制电路被配置为响应于数字电信号输入的电平来控制光晶闸管的开关操作。

公开(公告)号：US09276160B2

公开(公告)日：2016-03-01

申请号：US14287388

申请日：2014-05-27

申请人： Opel Solar, Inc. ,  The University of Connecticut

发明人： Geoff W. Taylor

IPC分类号： H01L27/148 ,  H01L31/0352 ,  H01L31/113 ,  H01L31/0224 ,  H01L31/0232 ,  H01L27/144 ,  H01L31/0304 ,  G02B6/35 ,  G02B6/42 ,  G02B6/43 ,  G02B6/12

CPC分类号： H01L31/1136 ,  G02B6/00 ,  G02B6/12 ,  G02B6/29338 ,  G02B6/3596 ,  G02B6/4295 ,  G02B6/43 ,  G02B2006/12145 ,  H01L27/1443 ,  H01L29/0834 ,  H01L29/0839 ,  H01L29/122 ,  H01L29/7392 ,  H01L29/74 ,  H01L29/7424 ,  H01L29/745 ,  H01L29/749 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/03044 ,  H01L31/03046 ,  H01L31/035209

摘要： A semiconductor device suitable for power applications includes a thyristor epitaxial layer structure defining an anode region offset vertically from a cathode region with a plurality of intermediate regions therebetween. An anode electrode is electrically coupled to the anode region. A cathode electrode is electrically coupled to the cathode region. A switchable current path that extends vertically between the anode region and the cathode region has a conducting state and a non-conducting state. An epitaxial resistive region is electrically coupled to and extends laterally from one of the plurality of intermediate regions. An FET is provided having a channel that is electrically coupled to the epitaxial resistive region. The FET can be configured to inject (or remove) electrical carriers into (or from) the one intermediate region via the epitaxial resistive region in order to switch the switchable current path between its non-conducting state and its conducting state.

摘要翻译： 适用于功率应用的半导体器件包括限定从阴极区垂直偏移的阳极区的晶闸管外延层结构，其间具有多个中间区。 阳极电极电耦合到阳极区域。 阴极电连接到阴极区。 在阳极区域和阴极区域之间垂直延伸的可切换电流路径具有导通状态和非导通状态。 外延电阻区域电耦合到多个中间区域中的一个并且从其横向延伸。 提供具有电耦合到外延电阻区的沟道的FET。 FET可以被配置为通过外延电阻区域将（或从）一个中间区域注入（或去除）电载体，以便在其导通状态和其导通状态之间切换可切换电流路径。

公开(公告)号：US09209815B1

公开(公告)日：2015-12-08

申请号：US14579151

申请日：2014-12-22

申请人： Opel Solar, Inc. ,  The University of Connecticut

发明人： Geoff W. Taylor

IPC分类号： H03L7/06

CPC分类号： H03L7/06 ,  H04B10/63

摘要： A charge pump circuit for an optical phase lock loop, which includes first and second optical thyristors configured to receive respective first and second digital optical signal inputs. A first control circuit receives a first digital electrical signal input corresponding to the second digital optical signal input, and a second control circuit receives a second digital electrical signal input corresponding to the first digital optical signal input. The first control circuitry controls switching operation of the first optical thyristor that sources current to a first filter circuit in response to the levels of the first digital optical signal input and the first digital electrical signal input. The second control circuitry control switching operation of the second optical thyristor that sinks current from a second filter circuit in response to the levels of the second digital optical signal input and the second digital electrical signal input.

摘要翻译： 一种用于光锁相环的电荷泵电路，其包括构造成接收相应的第一和第二数字光信号输入的第一和第二光晶闸管。 第一控制电路接收对应于第二数字光信号输入的第一数字电信号输入，第二控制电路接收对应于第一数字光信号输入的第二数字电信号输入。 第一控制电路响应于第一数字光信号输入和第一数字电信号输入的电平，控制向第一滤波器电路供电的第一光晶闸管的开关操作。 第二控制电路控制响应于第二数字光信号输入和第二数字电信号输入的电平而从第二滤波器电路吸收电流的第二光晶闸管的开关操作。