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    Film forming method and film forming apparatus
    14.
    发明申请
    Film forming method and film forming apparatus 审中-公开
    成膜方法和成膜装置

    公开(公告)号：US20060035035A1

    公开(公告)日：2006-02-16

    申请号：US11205084

    申请日：2005-08-17

    Applicant: Mitsunori Sakama

    Inventor： Mitsunori Sakama

    IPC: H05H1/24 ,  H01L21/20

    CPC classification number: C23C16/515 ,  C23C16/24 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45502 ,  C23C16/45523 ,  C23C16/45557 ,  C23C16/505 ,  C30B25/105 ,  C30B29/06 ,  H01J37/32082 ,  H01J2237/3321 ,  H01J2237/3322 ,  H01J2237/3328 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/84

    Abstract: When an amorphous silicon film is formed by a plasma CVD method, a hydrogen gas is supplied into a chamber before the start of film formation to cause discharge. In this state, film formation is not made. At the step where the discharge becomes stable, silane as a film forming gas is supplied into the chamber. At the same time, supply of the hydrogen gas is stopped. Silane is decomposed by the stable discharge, and film formation of an amorphous silicon film is made. By doing so, it is possible to eliminate the instability at the start of discharge. Film formation can be carried out in the state where the discharge is always stable. Also, in the plasma CVD method using silane as the film forming gas, supply of the silane gas is stopped in the state where the radio frequency discharge is maintained, and instead of the silane gas, the hydrogen gas as the discharge gas is supplied. For a predetermined period of time, plasma without film formation by decomposition of the hydrogen gas is formed. Since a negative self bias is applied to the formed surface in this state, negatively charged minute particles do not adhere to the formed surface. The discharge is stopped in the state where the minute particles in the atmosphere are exhausted. In this way, the state where the minute particles do not adhere to the formed surface can be made.

    Abstract translation: 当通过等离子体CVD法形成非晶硅膜时，在开始成膜之前将氢气供应到室中以引起放电。 在这种状态下，不形成成膜。 在放电稳定的步骤中，作为成膜气体的硅烷被供给到室中。 同时停止供给氢气。 硅烷通过稳定的放电分解，并且制成非晶硅膜的膜形成。 通过这样做，可以消除开始放电时的不稳定性。 成膜可以在放电总是稳定的状态下进行。 此外，在使用硅烷作为成膜气体的等离子体CVD法中，在保持射频放电的状态下停止供给硅烷气体，代替硅烷气体，供给作为放电气体的氢气。 在预定的时间段内，形成通过氢气分解而不形成膜的等离子体。 由于在该状态下对形成的表面施加负的自偏压，所以带负电的微小颗粒不会附着在形成的表面上。 在大气中的微小颗粒被排出的状态下停止放电。 以这种方式，可以制成微小颗粒不附着到成形表面的状态。

    Method for forming a gap filling refractory metal layer having reduced stress
    15.
    发明授权
    Method for forming a gap filling refractory metal layer having reduced stress 失效
    用于形成具有减小的应力的填充难熔金属层的间隙填充方法

    公开(公告)号：US06271129B1

    公开(公告)日：2001-08-07

    申请号：US08984438

    申请日：1997-12-03

    Applicant: Steve Ghanayem ,  Maitreyee Mahajani

    Inventor： Steve Ghanayem ,  Maitreyee Mahajani

    IPC: H01L2144

    CPC classification number: H01J37/32743 ,  C23C16/14 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32788 ,  H01J2237/3321 ,  H01J2237/3328 ,  H01L21/28556

    Abstract: A method for forming a refractory metal layer that features two-stage nucleation prior to bulk deposition of the same. The method includes placing a substrate in a deposition zone, flowing, into the deposition zone during a first deposition stage, a silicon source, such as a silane gas, and a tungsten source, such as tungsten-hexafluoride gas, so as to obtain a predetermined ratio of the two gases therein. During a second deposition stage, subsequent to the first deposition stage, the ratio of the two gases is varied. Specifically, in the first deposition stage there is a greater quantity of silane gas than tungsten-hexafluoride gas. In the second deposition stage there may be a greater quantity of tungsten-hexafluoride than silane.

    Abstract translation: 一种形成难熔金属层的方法，其特征在于在其沉积之前具有两级成核。 该方法包括在第一沉积阶段将衬底放置在沉积区中流动到沉积区中，将诸如硅烷气体的硅源和诸如六氟化钨气体的钨源放置在基底上，以获得 其中两种气体的预定比例。 在第二沉积阶段期间，在第一沉积阶段之后，改变两种气体的比例。 具体地说，在第一沉积阶段，比六氟化钨气体有大量的硅烷气体。 在第二沉积阶段，可能比硅烷有更多的六氟化钨。

    Common substrate and shadow ring lift apparatus
    17.
    发明授权
    Common substrate and shadow ring lift apparatus 有权

    公开(公告)号：US11881375B2

    公开(公告)日：2024-01-23

    申请号：US17232078

    申请日：2021-04-15

    Applicant: Applied Materials, Inc.

    Inventor： Abhishek Chowdhury ,  Nataraj Bhaskar Rao ,  Siqing Lu ,  Ravikumar Patil

    IPC: H01J37/08 ,  H01J37/32 ,  H01J37/24 ,  H01J37/248

    CPC classification number: H01J37/08 ,  H01J37/248 ,  H01J37/32642 ,  H01J2237/24564 ,  H01J2237/3328

    Abstract: Embodiments of a lift apparatus for use in a substrate processing chamber are provided herein. In some embodiments, a lift apparatus includes: a plurality of first lift pin assemblies configured to raise or lower a substrate having a given diameter when disposed thereon, wherein each of the first lift pin assemblies includes a first lift pin disposed on a first bellows assembly; a plurality of second lift pin assemblies arranged in a circle having a diameter greater than the given diameter and configured to raise or lower an annular chamber component, wherein each of the second lift pin assemblies includes a second lift pin disposed on a second bellows assembly; an actuator; and a lift assembly coupled to the actuator and configured to raise or lower each of the first lift pin assemblies and the second lift pin assemblies by movement of the actuator.

    METHOD FOR METALLIZING DIELECTRIC SUBSTRATE SURFACE, AND DIELECTRIC SUBSTRATE PROVIDED WITH METAL FILM
    20.
    发明申请
    METHOD FOR METALLIZING DIELECTRIC SUBSTRATE SURFACE, AND DIELECTRIC SUBSTRATE PROVIDED WITH METAL FILM 审中-公开
    用于金属化电介质基材表面的方法和用金属膜提供的介电基材

    公开(公告)号：US20160362791A1

    公开(公告)日：2016-12-15

    申请号：US15121524

    申请日：2015-02-24

    Applicant: OSAKA UNIVERSITY ,  NOF CORPORATION

    Inventor： Kazuya Yamamura ,  Yuji Ohkubo ,  Haruka Sato ,  Masaya Hikita

    IPC: C23C18/04 ,  H01J37/32 ,  C09D11/52 ,  C09D7/12 ,  C09D151/00 ,  C09J11/06 ,  C09J5/00 ,  C09J151/08 ,  C09J151/00 ,  C09D151/08 ,  C23C18/08 ,  C09J9/02

    CPC classification number: C23C18/04 ,  C08J7/045 ,  C08J7/123 ,  C08J2327/18 ,  C08J2345/00 ,  C08J2379/08 ,  C08J2433/14 ,  C09D7/63 ,  C09D11/52 ,  C09D151/003 ,  C09D151/08 ,  C09J5/00 ,  C09J9/02 ,  C09J11/06 ,  C09J151/003 ,  C09J151/08 ,  C09J2427/006 ,  C09J2479/086 ,  C23C18/08 ,  H01J37/32055 ,  H01J2237/3328

    Abstract: A method includes:generating a peroxide radical on a dielectric substrate surface by treating the dielectric substrate surface with atmospheric pressure plasma using a rare gas; fixing a functional group forming a coordinate bond with a silver ion, by reacting a grafting agent; and applying a silver-containing composition to the substrate surface, followed by heating and curing the silver-containing composition, to thereby form a silver thin film layer, the silver-containing composition containing a silver compound (A) represented by Formula (1) and an amine compound (B) represented by Formula (2), the silver compound (A) being contained in an amount of 10 to 50% by mass, the amine compound (B) being contained in an amount of 50 to 90% by mass, relative to a total amount of 100% by mass of the silver compound (A) and the amine compound (B).The method enables to form a metal film having high adhesiveness even on the surface of a fluorine resin, which is suitable as a dielectric substrate due to its property of avoidance of delay in signal transmission speed or increase in power consumption, but has extremely low adhesiveness. (R1; a hydrogen atom, —(CY2)a-CH3, or —((CH2)b-O—CHZ)c-CH3; R2: —(CY2)d-CH3 or —((CH2)e-O—CHZ)f-CH3; Y: a hydrogen atom or —(CH2)g-CH3; Z: a hydrogen atom or —(CH2)h-CH3; a: an integer of 0 to 8; b: an integer of 1 to 4; c: an integer of 1 to 3; d: an integer of 1 to 8; e: an integer of 1 to 4; f: an integer of 1 to 3; g: an integer of 1 to 3; h: an integer of 1 or 2)

    Abstract translation: （R1;氢原子， - （CY2）a-CH3或 - （（CH2）bO-CHZ）c-CH3; R2： - （CY2）d-CH3或 - （（CH2）eO-CHZ） CH 3; Y：氢原子或 - （CH 2）g -CH 3; Z：氢原子或 - （CH 2）h -CH 3; a：0〜8的整数; b：1〜4的整数; c： 1〜3的整数; d表示1〜8的整数，e表示1〜4的整数，f表示1〜3的整数，g表示1〜3的整数，h表示1以上的整数， 2）

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