公开(公告)号：US20140273488A1

公开(公告)日：2014-09-18

申请号：US14246978

申请日：2014-04-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US20140273451A1

公开(公告)日：2014-09-18

申请号：US13914738

申请日：2013-06-11

Applicant: Applied Materials, Inc.

Inventor： Benjamin C. Wang ,  Amit Khandelwal ,  Avegerinos V. Gelatos ,  Joshua Collins ,  Kedar Sapre ,  Nitin K. Ingle

IPC: H01L21/285

CPC classification number: H01L21/76877 ,  C23C16/045 ,  C23C16/14 ,  C23C16/56 ,  H01L21/28556

Abstract: Methods of filling gaps with tungsten are described. The methods include a tungsten dep-etch-dep sequence to enhance gapfilling yet avoid difficulty in restarting deposition after the intervening etch. The first tungsten deposition may have a nucleation layer or seeding layer to assist growth of the first tungsten deposition. Restarting deposition with a less-than-conductive nucleation layer would impact function of an integrated circuit, and therefore avoiding tungsten “poisoning” during the etch is desirable. The etching step may be performed using a plasma to excite a halogen-containing precursor while the substrate at relatively low temperature (near room temperature or less). The plasma may be local or remote. Another method may be used in combination or separately and involves the introduction of a source of oxygen into the plasma in combination with the halogen-containing precursor.

Abstract translation: 描述了用钨填充间隙的方法。 这些方法包括用于增强间隙填充的钨去蚀刻 - 去除序列，但是避免在中间蚀刻之后重新开始沉积的困难。 第一钨沉积可以具有成核层或接种层以帮助第一钨沉积的生长。 用不太导电的成核层重新开始沉积将影响集成电路的功能，因此避免在蚀刻期间的钨“中毒”。 可以使用等离子体来进行蚀刻步骤，以在较低温度（接近室温或更低温度）的衬底下激发含卤素的前体。 等离子体可能是本地或远程的。 另一种方法可以组合使用或单独使用，并且涉及将氧源引入与含卤素前体组合的等离子体中。

公开(公告)号：US20140268083A1

公开(公告)日：2014-09-18

申请号：US14139507

申请日：2013-12-23

Applicant: Applied Materials, Inc.

Inventor： Soumendra N. Barman ,  Cara Beasley ,  Abhijit Basu Mallick ,  Ralf Hofmann ,  Nitin K. Ingle

IPC: G03F1/24 ,  G03F7/16 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F7/164 ,  G03F7/70316 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/067

Abstract: An extreme ultraviolet mirror or blank production system includes: a first deposition system for depositing a planarization layer over a semiconductor substrate; a second deposition system for depositing an ultra-smooth layer over the planarization layer, the ultra-smooth layer having reorganized molecules; and a third deposition system for depositing a multi-layer stack over the ultra-smooth layer. The extreme ultraviolet blank includes: a substrate; a planarization layer over the substrate; an ultra-smooth layer over the planarization layer, the ultra-smooth layer having reorganized molecules; a multi-layer stack; and capping layers over the multi-layer stack. An extreme ultraviolet lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for placing an extreme ultraviolet mask blank with a planarization layer and an ultra-smooth layer over the planarization layer; and a wafer stage for placing a wafer.

Abstract translation: 一种极紫外镜或空白生产系统包括：用于在半导体衬底上沉积平坦化层的第一沉积系统; 用于在所述平坦化层上沉积超光滑层的第二沉积系统，所述超平滑层具有重组的分子; 以及用于在超平滑层上沉积多层堆叠的第三沉积系统。 极紫外线空白包括：基材; 衬底上的平坦化层; 在平坦化层上的超光滑层，超光滑层具有重组的分子; 多层堆叠 并在多层堆叠上覆盖层。 极紫外光刻系统包括：极紫外光源; 用于引导来自极紫外光源的光的反射镜; 用于在平坦化层上放置具有平坦化层和超平滑层的极紫外线掩模坯料的掩模版台; 以及用于放置晶片的晶片台。

公开(公告)号：US20140262038A1

公开(公告)日：2014-09-18

申请号：US14246915

申请日：2014-04-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/67

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US20140248754A1

公开(公告)日：2014-09-04

申请号：US13834508

申请日：2013-03-15

Applicant: APPLIED MATERIALS INC.

Inventor： Kiran V. Thadani ,  Jingjing Xu ,  Abhijit Basu Mallick ,  Joe Griffith Cruz ,  Nitin K. Ingle ,  Pravin K. Narwankar

IPC: H01L21/20

CPC classification number: H01L21/2015 ,  C23C16/045 ,  C23C16/26 ,  C23C16/30 ,  C23C16/56 ,  H01J37/32357 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76837 ,  H01L2221/1047

Abstract: A method of forming and controlling air gaps between adjacent raised features on a substrate includes forming a silicon-containing film in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming carbon-containing material on top of the silicon-containing film and forming a second film over the carbon-containing material using a flowable deposition process. The second film fills an upper region between the adjacent raised features. The method also includes curing the materials at an elevated temperature for a period of time to form the air gaps between the adjacent raised features. The thickness and number layers of films can be used to control the thickness, vertical position and number of air gaps.

Abstract translation: 在衬底上形成和控制相邻凸起特征之间的空气间隙的方法包括：使用可流动沉积工艺在邻近凸起特征之间的底部区域中形成含硅膜。 该方法还包括在含硅膜的顶部上形成含碳材料，并使用可流动的沉积工艺在含碳材料上形成第二膜。 第二膜填充相邻凸起特征之间的上部区域。 该方法还包括在升高的温度下固化材料一段时间以形成相邻凸起特征之间的气隙。 膜的厚度和数量层可用于控制厚度，垂直位置和气隙数量。

公开(公告)号：US20140213070A1

公开(公告)日：2014-07-31

申请号：US13834333

申请日：2013-03-15

Applicant: Applied Materials, Inc.

Inventor： Sukwon Hong ,  Toan Tran ,  Abhijit Mallick ,  Jingmei Liang ,  Nitin K. Ingle

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/0234

Abstract: Methods of forming a dielectric layer on a substrate are described, and may include introducing a first precursor into a remote plasma region fluidly coupled with a substrate processing region of a substrate processing chamber A plasma may be formed in the remote plasma region to produce plasma effluents. The plasma effluents may be directed into the substrate processing region. A silicon-containing precursor may be introduced into the substrate processing region, and the silicon-containing precursor may include at least one silicon-silicon bond. The plasma effluents and silicon-containing precursor may be reacted in the processing region to form a silicon-based dielectric layer that is initially flowable when formed on the substrate.

Abstract translation: 描述了在基板上形成电介质层的方法，并且可以包括将第一前体引入到与衬底处理室的衬底处理区域流体耦合的远程等离子体区域中。等离子体可以形成在远程等离子体区域中以产生等离子体流出物 。 等离子体流出物可以被引导到基板处理区域中。 可以将含硅前体引入衬底处理区域，并且含硅前体可以包括至少一个硅 - 硅键。 等离子体流出物和含硅前体可以在处理区域中反应以形成当在基底上形成时最初可流动的硅基电介质层。

公开(公告)号：US20130177847A1

公开(公告)日：2013-07-11

申请号：US13633252

申请日：2012-10-02

Applicant: Applied Materials, Inc.

Inventor： Amit Chatterjee ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: G03F7/075 ,  G03F7/20

CPC classification number: G03F7/0757 ,  G03F7/0044 ,  G03F7/20

Abstract: Methods and corresponding photoresists are described for fine linewidth lithography using x-rays, e-beams, visible spectrum optical lithography, ultra-violet optical lithography or extreme ultra-violet lithography. The methods include the formation of a photoresist film including a dopant having an atomic mass greater than or equal to twenty two. The dopant may be introduced daring the formation of the photoresist. The photoresist includes the dopant to increase the absorption of radiation during lithography. The photoresist may be silicon-, germanium or carbon-based photoresists.

Abstract translation: 描述了使用X射线，电子束，可见光谱光刻，紫外线光刻或极紫外光刻的细线宽光刻法的方法和相应的光致抗蚀剂。 所述方法包括形成包含原子质量大于或等于二十二的掺杂剂的光致抗蚀剂膜。 可以引入掺杂剂来大量形成光致抗蚀剂。 光致抗蚀剂包括掺杂剂以增加光刻期间的辐射吸收。 光致抗蚀剂可以是硅，锗或碳基光致抗蚀剂。

公开(公告)号：US20130130507A1

公开(公告)日：2013-05-23

申请号：US13745251

申请日：2013-01-18

Applicant: Applied Materials, Inc.

Inventor： Yunyu Wang ,  Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01L21/31116

Abstract: A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-nitrogen-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from the exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. The silicon-and-nitrogen-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide.

公开(公告)号：US20130130506A1

公开(公告)日：2013-05-23

申请号：US13745109

申请日：2013-01-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Yunyu Wang ,  Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/32137

Abstract: A method of suppressing the etch rate for exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. The etch selectivity of silicon relative to silicon nitride and other silicon-and-nitrogen-containing material is increased using the method. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-nitrogen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including nitrogen trifluoride and hydrogen (H2). The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.

公开(公告)号：US20250095968A1

公开(公告)日：2025-03-20

申请号：US18370132

申请日：2023-09-19

Applicant: Applied Materials, Inc.

Inventor： Laksheswar Kalita ,  Nitin K. Ingle ,  Nilesh Mistry ,  Jonathan J. Strahle ,  Christopher L. Beaudry ,  Lok Kee Loh

IPC: H01J37/32

Abstract: Exemplary methods for a coating a component of a semiconductor processing system may include forming a nickel-containing alloy on an exposed surface the component of the semiconductor processing system. The methods may include forming plasma effluents of a fluorine-containing precursor. The methods may include contacting the nickel-containing alloy with the plasma effluents of the fluorine-containing precursor. The contacting may fluorinate a portion of the nickel-containing alloy to form a nickel-and-fluorine-containing material overlying the nickel-containing alloy.