公开(公告)号：US20180291505A1

公开(公告)日：2018-10-11

申请号：US16006010

申请日：2018-06-12

Applicant: Applied Materials, Inc.

Inventor： Victor Nguyen ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Mark Saly ,  David Thompson

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/36

Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.

公开(公告)号：US10036089B2

公开(公告)日：2018-07-31

申请号：US14316126

申请日：2014-06-26

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Jeffrey W. Anthis

IPC: C23C16/08 ,  C23C16/18 ,  C23C16/455

CPC classification number: C23C16/08 ,  C23C16/18 ,  C23C16/45553

Abstract: Provided are methods of depositing films comprising exposing at least a portion of a substrate to a metal precursor to provide a first metal on the substrate and an organometallic reducing agent to deposit a second metal on the substrate to form a mixture or alloy of the first metal and the second metal. Exposure to the metal precursor and organometallic reducing agent can be in either order or simultaneously.

公开(公告)号：US10023958B2

公开(公告)日：2018-07-17

申请号：US14533496

申请日：2014-11-05

Applicant: Applied Materials, Inc.

Inventor： Victor Nguyen ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Mark Saly ,  David Thompson

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/36

Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.

公开(公告)号：US20180195170A1

公开(公告)日：2018-07-12

申请号：US15863348

申请日：2018-01-05

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Ghazal Saheli ,  Feng Q. Liu ,  David Thompson

IPC: C23C16/40 ,  C23C16/455

CPC classification number: C23C16/40 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45553

Abstract: Processing methods comprising exposing a substrate to a first reactive gas comprising a cyclopentadienyl nickel complex and a second reactive gas comprising a sub-saturative amount of oxygen to form a nickel oxide film with a carbon content in the range of about 2 to about 10 atomic percent are described.

公开(公告)号：US20180096847A1

公开(公告)日：2018-04-05

申请号：US15718148

申请日：2017-09-28

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan

IPC: H01L21/033 ,  C23F1/00 ,  H01L21/3213

CPC classification number: H01L21/0338 ,  C23F1/00 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/32133 ,  H01L21/32139

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US09911591B2

公开(公告)日：2018-03-06

申请号：US15142497

申请日：2016-04-29

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Mark Saly ,  Bhaskar Jyoti Bhuyan

IPC: H01L21/336 ,  H01L21/02 ,  C23C16/455 ,  C23C16/04 ,  C23C16/50 ,  H01L21/311 ,  H01L21/67 ,  C07F7/00 ,  H01L21/3105 ,  H01L21/32

CPC classification number: H05K1/0296 ,  C07F7/00 ,  C23C16/04 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/50 ,  G03G15/50 ,  G03G15/80 ,  G03G21/1652 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/02307 ,  H01L21/3105 ,  H01L21/31133 ,  H01L21/32 ,  H01L21/67207 ,  H05K1/0269 ,  H05K1/117 ,  H05K3/4015 ,  H05K3/403 ,  H05K2201/0394 ,  H05K2201/09063 ,  H05K2201/09181 ,  H05K2201/10287 ,  H05K2201/10363

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface. Methods include soaking a substrate surface comprising hydroxyl-terminations with a silylamine to form silyl ether-terminations and depositing a film onto a surface other than the silyl ether-terminated surface.

公开(公告)号：US20170194156A1

公开(公告)日：2017-07-06

申请号：US15461842

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  Srinivas Gandikota ,  Avgerinos V. Gelatos ,  Atif Noori ,  Mei Chang ,  David Thompson ,  Steve G. Ghanayem

IPC: H01L21/285 ,  C23C16/34 ,  C23C16/02 ,  C23C16/42 ,  H01L21/3205 ,  C23C16/455

CPC classification number: H01L21/28562 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/14 ,  C23C16/345 ,  C23C16/42 ,  C23C16/45525 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  H01L21/28088 ,  H01L21/28506 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76877

Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.

公开(公告)号：US09685325B2

公开(公告)日：2017-06-20

申请号：US14795521

申请日：2015-07-09

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  David Thompson ,  Jessica Sevanne Kachian

IPC: H01L21/31 ,  H01L21/02 ,  C23C16/32 ,  C23C16/36 ,  C23C16/455

CPC classification number: H01L21/02529 ,  C23C16/325 ,  C23C16/36 ,  C23C16/45531 ,  C23C16/4554 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262

Abstract: Methods for the deposition of a silicon-containing film using an organic reactant, a silicon precursor and a plasma.

公开(公告)号：US09643844B2

公开(公告)日：2017-05-09

申请号：US14771697

申请日：2014-02-28

Applicant: Applied Materials, Inc.

Inventor： David Thompson

IPC: C23C16/36 ,  C23C16/48 ,  C23C16/455 ,  C01B21/082 ,  C23C16/30

CPC classification number: C01B21/0828 ,  C23C16/308 ,  C23C16/36 ,  C23C16/45525 ,  C23C16/45553 ,  C23C16/48

Abstract: Provided are methods for the deposition of films comprising SiCN and SiCON. Certain methods involve exposing a substrate surface to a first and second precursor, the first precursor having a formula (XyH3-ySi)zCH4-z, (XyH3-ySi)(CH2)(SiXpH2-p)(CH2)(SiXyH3-y), or (XyH3-ySi)(CH2)n(SiXyH3-y), wherein X is a halogen, y has a value of between 1 and 3, and z has a value of between 1 and 3, p has a value of between 0 and 2, and n has a value between 2 and 5, and the second precursor comprising a reducing amine. Certain methods also comprise exposure of the substrate surface to an oxygen source to provide a film comprising SiCON.

公开(公告)号：US20170114459A1

公开(公告)日：2017-04-27

申请号：US15297270

申请日：2016-10-19

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  Keiichi Tanaka ,  Eswaranand Venkatasubramanian ,  Mandyam Sriram ,  Bhaskar Jyoti Bhuyan ,  Pramit Manna ,  David Thompson ,  Andrew Short

IPC: C23C16/455 ,  C23C16/40 ,  H01L21/762 ,  C23C16/02

CPC classification number: C23C16/45527 ,  C23C16/02 ,  C23C16/04 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45534 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/76224

Abstract: Methods for depositing film comprising exposing a substrate surface to an organic-based poisoning agent to preferentially inhibit film growth at the top of a feature relative to the bottom of the feature and depositing a film. The substrate can be exposed to the poisoning agent any number of times to promote bottom-up growth of the film in the feature.