公开(公告)号：US08637392B2

公开(公告)日：2014-01-28

申请号：US12700863

申请日：2010-02-05

Applicant: Charles L. Arvin ,  Raschid J. Bezama ,  Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  David L. Questad ,  Wolfgang Sauter ,  Timothy D. Sullivan ,  Brian R. Sundlof

Inventor： Charles L. Arvin ,  Raschid J. Bezama ,  Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  David L. Questad ,  Wolfgang Sauter ,  Timothy D. Sullivan ,  Brian R. Sundlof

IPC: H01L21/44

CPC classification number: H01L24/13 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/10126 ,  H01L2224/11334 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1182 ,  H01L2224/119 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13101 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13687 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2924/01024 ,  H01L2924/01026 ,  H01L2924/01032 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A solder interconnect structure is provided with non-wettable sidewalls and methods of manufacturing the same. The method includes forming a nickel or nickel alloy pillar on an underlying surface. The method further includes modifying the sidewall of the nickel or nickel alloy pillar to prevent solder wetting on the sidewall.

Abstract translation: 焊接互连结构设置有不可润湿的侧壁及其制造方法。 该方法包括在下面的表面上形成镍或镍合金支柱。 该方法还包括修改镍或镍合金柱的侧壁以防止在侧壁上的焊料润湿。

公开(公告)号：US07784669B2

公开(公告)日：2010-08-31

申请号：US12536122

申请日：2009-08-05

Applicant: Gareth G. Hougham ,  Kamalesh K. Srivastava ,  Sung K. Kang ,  Da-Yuan Shih ,  Brian R. Sundlof ,  S. Jay Chey ,  Donald W. Henderson ,  David R. Di Milia ,  Richard P. Ferlita ,  Roy A. Carruthers

Inventor： Gareth G. Hougham ,  Kamalesh K. Srivastava ,  Sung K. Kang ,  Da-Yuan Shih ,  Brian R. Sundlof ,  S. Jay Chey ,  Donald W. Henderson ,  David R. Di Milia ,  Richard P. Ferlita ,  Roy A. Carruthers

IPC: B23K35/24

CPC classification number: B23K1/19 ,  B23K35/262 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2201/0215

Abstract: Briefly, a novel material process is disclosed wherein one or more nucleation modifiers are added, in trace amounts, to a lead-free tin-rich solder alloy to produce a solder composition with reduce or suppressed undercooling temperature characteristics. The modifier being a substance which facilitates the reduction of extreme anisotropic properties associated with body-centered-tetragonal tin based lead-free solder. The addition of the nucleation modifiers to the solder alloy does not materially effect the solder composition's melting point. As such, balls of solder with the nucleated composition freeze while other solder balls within the array remain in the melt. This effectively enables one substrate to be pinned to another substrate by one or more predetermined solder balls to secure the package while the remaining solder joints are in the liquid state. Further, the addition of a trace amount of nucleation sites within the composition facilitates control over the number, size, and orientations of primary intermetallic compounds in tin rich crystallite grains. Moreover, trace amounts of one or more solid and/or insoluble nucleating modifiers within a given volume of solder reduces the size of average crystallites within the composition.

Abstract translation: 简而言之，公开了一种新颖的材料方法，其中将一种或多种成核改性剂以微量添加到无铅富锡焊料合金中以产生具有降低或抑制的过冷温度特性的焊料组合物。 该改性剂是有助于减少与体心四方锡锡基无铅焊料相关的极端各向异性的物质。 将成核改性剂添加到焊料合金中不会实质上影响焊料组合物的熔点。 因此，具有成核组合物的焊料球冻结，而阵列内的其它焊球保持在熔体中。 这有效地使一个基板通过一个或多个预定的焊球被固定到另一个基板，以固定封装，而剩余的焊点处于液态。 此外，在组合物中添加微量的成核位点有助于控制富锡微晶颗粒中初级金属间化合物的数量，尺寸和取向。 此外，在给定体积的焊料中痕量的一种或多种固态和/或不溶性成核改性剂减少了组合物内平均微晶的尺寸。

公开(公告)号：US20100200271A1

公开(公告)日：2010-08-12

申请号：US12704592

申请日：2010-02-12

Applicant: Charles L. Arvin ,  Alexandre Blander ,  Peter J. Brofman ,  Donald W. Henderson ,  Gareth G. Hougham ,  Hsichang Liu ,  Eric D. Perfecto ,  Srinivasa S.N. Reddy ,  Krystyna W. Semkow ,  Kamalesh K. Srivastava ,  Brian R. Sundlof ,  Julien Sylvestre ,  Renee L. Weisman

Inventor： Charles L. Arvin ,  Alexandre Blander ,  Peter J. Brofman ,  Donald W. Henderson ,  Gareth G. Hougham ,  Hsichang Liu ,  Eric D. Perfecto ,  Srinivasa S.N. Reddy ,  Krystyna W. Semkow ,  Kamalesh K. Srivastava ,  Brian R. Sundlof ,  Julien Sylvestre ,  Renee L. Weisman

IPC: H01B5/00 ,  H01R43/00

CPC classification number: H01B1/02 ,  B23K35/0244 ,  B23K35/262 ,  B23K35/36 ,  B23K35/3602 ,  B82Y30/00 ,  C22C13/00 ,  H01B13/00 ,  H01L23/49866 ,  H01L2924/0002 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2201/0209 ,  H05K2201/0257 ,  Y10T29/49117 ,  H01L2924/00

Abstract: In one embodiment of the present invention, inert nano-sized particles having dimensions from 1 nm to 1,000 nm are added into a solder ball. The inert nano-sized particles may comprise metal oxides, metal nitrides, metal carbides, metal borides, etc. The inert nano-sized particles may be a single compound, or may be a metallic material having a coating of a different material. In another embodiment of the present invention, a small quantity of at least one elemental metal that forms stable high melting intermetallic compound with tin is added to a solder ball. The added at least one elemental metal forms precipitates of intermetallic compounds with tin, which are dispersed as fine particles in the solder.

Abstract translation: 在本发明的一个实施方案中，将尺寸为1nm至1000nm的惰性纳米尺寸颗粒加入到焊球中。 惰性纳米尺寸颗粒可以包括金属氧化物，金属氮化物，金属碳化物，金属硼化物等。惰性纳米尺寸颗粒可以是单一化合物，或者可以是具有不同材料的涂层的金属材料。 在本发明的另一个实施方案中，将少量与锡形成稳定的高熔点金属间化合物的元素金属添加到焊料球中。 添加的至少一种元素金属与锡形成金属间化合物的沉淀物，其作为细颗粒分散在焊料中。

公开(公告)号：US07708909B2

公开(公告)日：2010-05-04

申请号：US12039309

申请日：2008-02-28

Applicant: Gareth Hougham ,  Paul A. Lauro ,  Brian R. Sundlof ,  Jeffrey D. Gelorme

Inventor： Gareth Hougham ,  Paul A. Lauro ,  Brian R. Sundlof ,  Jeffrey D. Gelorme

IPC: H01B1/04

CPC classification number: H01L23/3733 ,  B82Y30/00 ,  H01L23/373 ,  H01L23/3736 ,  H01L23/40 ,  H01L2224/16225 ,  H01L2924/00011 ,  H01L2924/00014 ,  Y10S977/788 ,  Y10T156/10 ,  Y10T428/24994 ,  H01L2224/0401

Abstract: The present invention relates generally to thermally-conductive pastes for use with integrated circuits, and particularly, but not by way of limitation, to self-orienting microplates of graphite.

Abstract translation: 本发明一般涉及用于集成电路的导热膏，特别是但不限于石墨的自取向微孔板。

公开(公告)号：US07611923B2

公开(公告)日：2009-11-03

申请号：US11740962

申请日：2007-04-27

Applicant: Benjamin V. Fasano ,  Brian R. Sundlof

Inventor： Benjamin V. Fasano ,  Brian R. Sundlof

IPC: H01L21/44

CPC classification number: H01L25/0657 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/16152 ,  H01L2924/1627 ,  H01L2924/3025 ,  H01L2224/0401

Abstract: A stacked semiconductor apparatus has at least one die attached to a first side of a carrier substrate. A first circuitized substrate is attached to the first side of the carrier substrate and overlying the at least one die in a manner such that the first circuitized substrate serves as an electrical interconnection device and a heat spreading lid. The first circuitized substrate is further configured so as to facilitate cooling of the at least one die by at least a cross flow of a cooling medium therethrough.

Abstract translation: 叠层半导体装置具有至少一个附着在载体基板的第一侧的管芯。 第一电路化基板被附接到载体基板的第一侧并且以使得第一电路化基板用作电互连装置和散热盖的方式覆盖至少一个管芯。 第一电路化基板被进一步构造成便于通过至少一个冷却介质的横流而使至少一个管芯冷却。

公开(公告)号：US09472520B2

公开(公告)日：2016-10-18

申请号：US13590332

申请日：2012-08-21

Applicant: Virendra R. Jadhav ,  Krystyna W. Semkow ,  Kamalesh K. Srivastava ,  Brian R. Sundlof

Inventor： Virendra R. Jadhav ,  Krystyna W. Semkow ,  Kamalesh K. Srivastava ,  Brian R. Sundlof

IPC: H01L23/00

CPC classification number: H01L24/13 ,  H01L23/562 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05666 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11901 ,  H01L2224/13005 ,  H01L2224/13013 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13171 ,  H01L2224/13184 ,  H01L2224/13655 ,  H01L2224/13666 ,  H01L2224/13671 ,  H01L2224/13684 ,  H01L2224/16235 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/2064 ,  H01L2924/351 ,  H01L2924/35121 ,  H01L2924/37001 ,  H01L2924/384 ,  Y10T156/10 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599

Abstract: A multi-layer pillar and method of fabricating the same is provided. The multi-layer pillar is used as an interconnect between a chip and substrate. The pillar has at least one low strength, high ductility deformation region configured to absorb force imposed during chip assembly and thermal excursions.

Abstract translation: 提供了一种多层柱及其制造方法。 多层柱用作芯片和基板之间的互连。 支柱具有至少一个低强度，高延展性变形区域，其被配置为吸收在芯片组装和热偏移期间施加的力。

公开(公告)号：US20130016479A1

公开(公告)日：2013-01-17

申请号：US13553887

申请日：2012-07-20

Applicant: Gareth Hougham ,  Paul A. Lauro ,  Brian R. Sundlof ,  Jeffrey D. Gelorme

Inventor： Gareth Hougham ,  Paul A. Lauro ,  Brian R. Sundlof ,  Jeffrey D. Gelorme

IPC: C09K5/00 ,  B32B37/26 ,  H05K7/20

CPC classification number: H01L23/3733 ,  B82Y30/00 ,  H01L23/373 ,  H01L23/3736 ,  H01L23/40 ,  H01L2224/16225 ,  H01L2924/00011 ,  H01L2924/00014 ,  Y10S977/788 ,  Y10T156/10 ,  Y10T428/24994 ,  H01L2224/0401

Abstract: The present invention relates generally to thermally-conductive pastes for use with integrated circuits, and particularly, but not by way of limitation, to self-orienting microplates of graphite.

Abstract translation: 本发明一般涉及用于集成电路的导热膏，特别是但不限于石墨的自取向微孔板。

公开(公告)号：US20120202343A1

公开(公告)日：2012-08-09

申请号：US13448500

申请日：2012-04-17

Applicant: Luc Bélanger ,  Srinivasa S.N. Reddy ,  Brian R. Sundlof

Inventor： Luc Bélanger ,  Srinivasa S.N. Reddy ,  Brian R. Sundlof

IPC: H01L21/44

CPC classification number: H01L24/13 ,  C22C19/03 ,  C23C14/025 ,  C23C14/165 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/0554 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11334 ,  H01L2224/13006 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/00014 ,  H01L2924/013

Abstract: A metallic adhesion layer is formed on a last level metal plate exposed in an opening of a passivation layer. A Ni—Cu alloy in which the weight percentage of Ni is from about 50% to about 70% is deposited by sputtering onto the metallic adhesion layer to form an underbump metallic layer. Optionally, a wetting layer comprising Cu or Au may be deposited by sputtering. A C4 ball is applied to a surface of the underbump metallic layer comprising the Ni—Cu alloy or the wetting layer for C4 processing. The sputter deposition of the Ni—Cu alloy offers economic advantages relative to known methods in the art since the Ni—Cu alloy in the composition of the present invention is non-magnetic and easy to sputter, and the consumption of the inventive Ni—Cu alloy is limited during C4 processing.

Abstract translation: 在暴露在钝化层的开口中的最后一级金属板上形成金属粘附层。 通过溅射将Ni的重量百分比为约50％至约70％的Ni-Cu合金沉积到金属粘合层上以形成下凸块金属层。 任选地，可以通过溅射沉积包含Cu或Au的润湿层。 将C4球施加到包含Ni-Cu合金或用于C4加工的润湿层的底部基底金属层的表面上。 Ni-Cu合金的溅射沉积相对于本领域已知的方法提供经济优势，因为本发明组合物中的Ni-Cu合金是非磁性的并且易于溅射，并且本发明的Ni-Cu C4加工时合金有限。

公开(公告)号：US20100207056A1

公开(公告)日：2010-08-19

申请号：US12772774

申请日：2010-05-03

Applicant: Gareth Hougham ,  Paul A. Lauro ,  Brian R. Sundlof ,  Jeffrey D. Gelorme

Inventor： Gareth Hougham ,  Paul A. Lauro ,  Brian R. Sundlof ,  Jeffrey D. Gelorme

IPC: C09K5/00

CPC classification number: H01L23/3733 ,  B82Y30/00 ,  H01L23/373 ,  H01L23/3736 ,  H01L23/40 ,  H01L2224/16225 ,  H01L2924/00011 ,  H01L2924/00014 ,  Y10S977/788 ,  Y10T156/10 ,  Y10T428/24994 ,  H01L2224/0401

Abstract: The present invention relates generally to thermally-conductive pastes for use with integrated circuits, and particularly, but not by way of limitation, to self-orienting microplates of graphite.

Abstract translation: 本发明一般涉及用于集成电路的导热膏，特别是但不限于石墨的自取向微孔板。

公开(公告)号：US20090267228A1

公开(公告)日：2009-10-29

申请号：US12111510

申请日：2008-04-29

Applicant: Charles L. Arvin ,  Carla A. Bailey ,  Harry D. Cox ,  Hua Gan ,  Hsichang Liu ,  Arthur G. Merryman ,  Vall F. McClean ,  Srinivasa S. N. Reddy ,  Brian R. Sundlof

Inventor： Charles L. Arvin ,  Carla A. Bailey ,  Harry D. Cox ,  Hua Gan ,  Hsichang Liu ,  Arthur G. Merryman ,  Vall F. McClean ,  Srinivasa S. N. Reddy ,  Brian R. Sundlof

IPC: H01L23/52 ,  H01L21/44

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L2224/03462 ,  H01L2224/03472 ,  H01L2224/03831 ,  H01L2224/0401 ,  H01L2224/05011 ,  H01L2224/05017 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05564 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/131 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

Abstract: One embodiment of the present invention is directed to an under bump metallurgy material. The under bump metallurgy material of this embodiment includes an adhesion layer and a conduction layer formed on top of the adhesion layer. The under bump metallurgy material of this embodiment also includes a barrier layer plated on top of the conduction layer and a sacrificial layer plated on top of the barrier layer. The conduction layer of this embodiment includes a trench formed therein, the trench contacting a portion of the barrier layer and blocking a path of intermetallic formation between the conduction layer and the sacrificial layer.

Abstract translation: 本发明的一个实施例涉及一种凸块下金属材料。 本实施方式的凸块状冶金材料包括粘合层和形成在粘合层顶部的导电层。 该实施例的凸块下冶金材料还包括电镀在导电层顶部上的阻挡层和镀在阻挡层顶部上的牺牲层。 该实施例的导电层包括在其中形成的沟槽，沟槽接触势垒层的一部分并且阻挡导电层和牺牲层之间的金属间形成路径。