公开(公告)号：US08637379B2

公开(公告)日：2014-01-28

申请号：US12575532

申请日：2009-10-08

申请人： Hannes Eder ,  Ivan Nikitin ,  Manfred Schneegans ,  Jens Goerlich ,  Karsten Guth ,  Alexander Heinrich

发明人： Hannes Eder ,  Ivan Nikitin ,  Manfred Schneegans ,  Jens Goerlich ,  Karsten Guth ,  Alexander Heinrich

IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  H01L21/44 ,  H01L21/50 ,  H01L21/60

CPC分类号： H01L24/27 ,  H01L21/4867 ,  H01L23/49513 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/274 ,  H01L2224/29 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2929 ,  H01L2224/29311 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/2949 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83399 ,  H01L2224/83439 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/8346 ,  H01L2224/8384 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15724 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01032 ,  H01L2924/01031 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/45015 ,  H01L2924/207

摘要： A description is given of a method. In one embodiment the method includes providing a semiconductor chip with semiconductor material being exposed at a first surface of the semiconductor chip. The semiconductor chip is placed over a carrier with the first surface facing the carrier. An electrically conductive material is arranged between the semiconductor chip and the carrier. Heat is applied to attach the semiconductor chip to the carrier.

摘要翻译： 给出了一种方法的描述。 在一个实施例中，该方法包括提供半导体芯片，该半导体芯片在半导体芯片的第一表面处被暴露。 半导体芯片放置在载体上，第一表面面向载体。 在半导体芯片和载体之间布置导电材料。 施加热量以将半导体芯片附接到载体上。

公开(公告)号：US20110260307A1

公开(公告)日：2011-10-27

申请号：US12768134

申请日：2010-04-27

申请人： Manfred Schneegans ,  Lothar Koenig

发明人： Manfred Schneegans ,  Lothar Koenig

IPC分类号： H01L23/488 ,  H01L21/60

CPC分类号： H01L23/3735 ,  H01L23/24 ,  H01L23/49568 ,  H01L23/49582 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L25/072 ,  H01L25/50 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/325 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/73265 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2224/8382 ,  H01L2224/85045 ,  H01L2224/85054 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2224/85948 ,  H01L2924/00011 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12043 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/00014 ,  H01L2924/01001 ,  H01L2924/01007 ,  H01L2924/0002 ,  H01L2924/05432 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/00015 ,  H01L2224/83205 ,  H01L2924/01006

摘要： An integrated circuit includes a chip including a copper bond pad metallization, and a copper bond wire including a copper ball. The copper ball is bonded directly to the copper bond pad.

摘要翻译： 集成电路包括包括铜焊垫金属化的芯片和包括铜球的铜焊丝。 铜球直接与铜焊盘接合。

公开(公告)号：US08003292B2

公开(公告)日：2011-08-23

申请号：US11943145

申请日：2007-11-20

申请人： Werner Kroeninger ,  Manfred Schneegans

发明人： Werner Kroeninger ,  Manfred Schneegans

IPC分类号： G03F7/34 ,  G03F7/42 ,  G03F7/16 ,  G03C11/12

CPC分类号： G03F7/32 ,  G03F7/16 ,  G03F7/161 ,  G03F7/34

摘要： A method in which a resist layer is applied to a base layer is disclosed. The resist layer includes an adhesive material, and the adhesive force of the adhesive material decreases or increases during an irradiation process. Residues of the resist layer may be stripped using the disclosed method.

公开(公告)号：US07351514B2

公开(公告)日：2008-04-01

申请号：US11156405

申请日：2005-06-20

申请人： Werner Kröninger ,  Manfred Schneegans

发明人： Werner Kröninger ,  Manfred Schneegans

IPC分类号： G03C11/12 ,  G03F7/34 ,  G03F7/42 ,  G03F7/16

CPC分类号： G03F7/32 ,  G03F7/16 ,  G03F7/161 ,  G03F7/34

摘要： A method in which a resist layer is applied to a base layer is disclosed. The resist layer includes an adhesive material, and the adhesive force of the adhesive material decreases or increases during an irradiation process. Residues of the resist layer may be stripped using the disclosed method.

摘要翻译： 公开了将抗蚀剂层施加到基底层的方法。 抗蚀剂层包括粘合剂材料，并且粘合剂材料的粘合力在照射过程中降低或增加。 可以使用所公开的方法剥离抗蚀剂层的残留物。

公开(公告)号：US20070114662A1

公开(公告)日：2007-05-24

申请号：US11600694

申请日：2006-11-16

申请人： Johann Helneder ,  Manfred Schneegans ,  Holger Torwesten

发明人： Johann Helneder ,  Manfred Schneegans ,  Holger Torwesten

IPC分类号： H01L23/48 ,  H01L21/00

CPC分类号： H01L24/12 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/05155 ,  H01L2224/05572 ,  H01L2224/05655 ,  H01L2224/11462 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/136 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/8121 ,  H01L2224/8181 ,  H01L2224/81815 ,  H01L2224/81825 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01021 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： One aspect of the invention relates to an interconnecting element between a semiconductor chip of a semiconductor wafer and a circuit support and to a method for producing and using the interconnecting element. Such interconnecting elements are arranged between contact areas of a semiconductor chip of a semiconductor wafer and contact terminal areas of a circuit support. The contact areas on the semiconductor chip or the semiconductor wafer, respectively, are arranged in depressions of a top of an insulating cover layer and are freely accessible. The interconnecting elements have a mushroom shape with a mushroom cap in a first metal area. On the mushroom cap of the first metal area, a second metal area is arranged which has high-melting intermetallic phases of metals of a solder material and the metal of the contact terminal areas of the circuit support.

摘要翻译： 本发明的一个方面涉及半导体晶片的半导体芯片和电路支架之间的互连元件以及用于制造和使用互连元件的方法。 这种互连元件被布置在半导体晶片的半导体芯片的接触区域和电路支架的接触端子区域之间。 分别在半导体芯片或半导体晶片上的接触区域设置在绝缘覆盖层的顶部的凹部中并且可以自由接近。 互连元件具有在第一金属区域中具有蘑菇帽的蘑菇形状。 在第一金属区域的蘑菇帽上，布置有第二金属区域，其具有焊料材料的金属的高熔点金属间相和电路支撑体的接触端子区域的金属。

公开(公告)号：US20060292849A1

公开(公告)日：2006-12-28

申请号：US11441978

申请日：2006-05-26

申请人： Dirk Mueller ,  Manfred Schneegans ,  Sokratis Sgouridis

发明人： Dirk Mueller ,  Manfred Schneegans ,  Sokratis Sgouridis

IPC分类号： H01L21/44 ,  H01L23/48

CPC分类号： H01L24/05 ,  H01L23/5258 ,  H01L23/562 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05018 ,  H01L2224/05026 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05558 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01061 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： The invention relates to an ultrathin semiconductor circuit having contact bumps and to a corresponding production method. The semiconductor circuit includes a bump supporting layer having a supporting layer thickness and having a supporting layer opening for uncovering a contact layer element being formed on the surface of a semiconductor circuit. An electrode layer is situated on the surface of the contact layer element within the opening of the bump supporting layer, on which electrode layer is formed a bump metallization for realizing the contact bump. On account of the bump supporting layer, a thickness of the semiconductor circuit can be thinned to well below 300 micrometers, with the wafer reliably being prevented from breaking. Furthermore, the moisture barrier properties of the semiconductor circuit are thereby improved.

摘要翻译： 本发明涉及一种具有接触凸点和相应制造方法的超薄半导体电路。 半导体电路包括具有支撑层厚度并具有用于露出形成在半导体电路的表面上的接触层元件的支撑层开口的凸块支撑层。 电极层位于触点支撑层的开口内的接触层元件的表面上，电极层形成有用于实现接触凸块的突起金属化。 由于凸起支撑层，可以将半导体电路的厚度减薄到远低于300微米，从而可靠地防止晶片断裂。 此外，由此提高了半导体电路的防潮性。

公开(公告)号：US20050266353A1

公开(公告)日：2005-12-01

申请号：US11156405

申请日：2005-06-20

申请人： Werner Kroninger ,  Manfred Schneegans

发明人： Werner Kroninger ,  Manfred Schneegans

IPC分类号： G03F7/16 ,  G03F7/32 ,  G03F7/34 ,  B32B31/00 ,  C08J7/04 ,  G03C5/00

CPC分类号： G03F7/32 ,  G03F7/16 ,  G03F7/161 ,  G03F7/34

摘要： A method in which a resist layer is applied to a base layer is disclosed. The resist layer includes an adhesive material, and the adhesive force of the adhesive material decreases or increases during an irradiation process. Residues of the resist layer may be stripped using the disclosed method.

摘要翻译： 公开了将抗蚀剂层施加到基底层的方法。 抗蚀剂层包括粘合剂材料，并且粘合剂材料的粘合力在照射过程中降低或增加。 可以使用所公开的方法剥离抗蚀剂层的残留物。

公开(公告)号：US5901901A

公开(公告)日：1999-05-11

申请号：US802134

申请日：1997-02-19

申请人： Manfred Schneegans ,  Holger Huebner

发明人： Manfred Schneegans ,  Holger Huebner

IPC分类号： H01L21/52 ,  H01L21/02 ,  H01L21/60 ,  H01L23/482 ,  H05K3/34 ,  H01L29/00

CPC分类号： H01L24/83 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L31/1113 ,  H01L31/18 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/05624 ,  H01L2224/29101 ,  H01L2224/83191 ,  H01L2224/83801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/157 ,  Y10T428/12681 ,  Y10T428/12687 ,  Y10T428/12778 ,  Y10T428/12812

摘要： In a semiconductor assembly with a solder material layer and a method for soldering the semiconductor assembly, a silicon semiconductor body with a diffusion barrier layer is provided with a solder material layer, preferably a tin layer. The semiconductor body is then applied to a metal carrier plate and is directly soldered to the carrier plate by heating to temperatures to above 250.degree. C., i.e. without further additions.

摘要翻译： 在具有焊料材料层的半导体组件和用于焊接半导体组件的方法中，具有扩散阻挡层的硅半导体本体设置有焊料材料层，优选为锡层。 然后将半导体体涂覆到金属载体板上，并通过加热到高于250℃的温度直接焊接到载体板上，即不进一步添加。

公开(公告)号：US08993372B2

公开(公告)日：2015-03-31

申请号：US13407731

申请日：2012-02-28

申请人： Manfred Schneegans ,  Carsten Ahrens ,  Adolf Koller ,  Gerald Lackner ,  Anton Mauder ,  Hans-Joachim Schulze

发明人： Manfred Schneegans ,  Carsten Ahrens ,  Adolf Koller ,  Gerald Lackner ,  Anton Mauder ,  Hans-Joachim Schulze

IPC分类号： H01L21/00 ,  H01L21/36 ,  H01L21/02 ,  H01L21/762 ,  H01L29/861

CPC分类号： H01L21/02658 ,  H01L21/76202 ,  H01L21/76224 ,  H01L29/8611 ,  Y10T428/218

摘要： Exemplary embodiments of a method for producing a semiconductor component having a polycrystalline semiconductor body region are disclosed, wherein the polycrystalline semiconductor body region is produced between the first and second surfaces of the semiconductor body in a semiconductor component section, wherein an electromagnetic radiation having a wavelength of at least 1064 nm is introduced into the semiconductor body in a manner focused onto a position in the semiconductor component section of the semiconductor body and wherein the power density of the radiation at the position is less than 1×108 W/cm2.

摘要翻译： 公开了一种用于制造具有多晶半导体体区域的半导体部件的制造方法的实施例，其中在半导体部件部分中在半导体主体的第一和第二表面之间产生多晶半导体本体区域，其中具有波长 至少1064nm的光束以聚焦到半导体主体的半导体部件部分中的位置的方式被引入半导体本体，并且其中该位置处的辐射的功率密度小于1×108W / cm 2。

公开(公告)号：US08432024B2

公开(公告)日：2013-04-30

申请号：US12768134

申请日：2010-04-27

申请人： Manfred Schneegans ,  Lothar Koenig

发明人： Manfred Schneegans ,  Lothar Koenig

IPC分类号： H01L23/495 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L23/3735 ,  H01L23/24 ,  H01L23/49568 ,  H01L23/49582 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L25/072 ,  H01L25/50 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/325 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/73265 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2224/8382 ,  H01L2224/85045 ,  H01L2224/85054 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2224/85948 ,  H01L2924/00011 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12043 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/00014 ,  H01L2924/01001 ,  H01L2924/01007 ,  H01L2924/0002 ,  H01L2924/05432 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/00015 ,  H01L2224/83205 ,  H01L2924/01006

摘要： An integrated circuit includes a chip including a copper bond pad metallization, and a copper bond wire including a copper ball. The copper ball is bonded directly to the copper bond pad.

摘要翻译： 集成电路包括包括铜焊垫金属化的芯片和包括铜球的铜焊丝。 铜球直接与铜焊盘接合。