Solder paste mixture
    21.
    发明授权
    Solder paste mixture 失效
    焊膏混合物

    公开(公告)号:US5382300A

    公开(公告)日:1995-01-17

    申请号:US216225

    申请日:1994-03-22

    摘要: A solder paste is composed of a vehicle (or flux) system and a mixture of at least two solder powders. One component of this mixture is a eutectic or near-eutectic Sn/Pb alloy powder, while the other component comprises powders selected from at least one elemental metal powder or at least one solder alloy powder or at least one elemental metal powder and at least one solder alloy powder. Said other component is a powder or combination of powders each of which has a liquidus temperature which is lower by at least 5 degrees Centigrade (.degree.C.) than the solidus temperature of said eutectic or near-eutectic Sn/Pb alloy powder or a solidus temperature which is higher by at least 5.degree. C. than the liquidus temperature of said eutectic or near-eutectic Sn/Pb alloy powder. The eutectic or near-eutectic Sn/Pb powder makes up from 5 to 95 weight percent of the total powder mixture. Alternatively, not all powders which comprise the second component need to obey this rule so long as at least 30% by wt. of the entire powder mixture has a solidus temperature which is at least 5.degree. C. higher than the highest liquidus temperature of the eutectic or near-eutectic Sn/Pb alloy powder. This solder paste results in an uncompromised consolidation and wetting process in which all of the solder joints or balls are formed on and wetted to an appropriate contact by the solder reflow process.

    摘要翻译: 焊膏由车辆(或焊剂)系统和至少两种焊料粉末的混合物组成。 该混合物的一种组分是共晶或近共晶Sn / Pb合金粉末,而另一种组分包含选自至少一种元素金属粉末或至少一种焊料合金粉末或至少一种元素金属粉末的粉末和至少一种 焊剂合金粉末。 所述其他组分是粉末或粉末的组合,其每一种的液相线温度比所述共晶或近共晶Sn / Pb合金粉末或固相线的固相线温度低至少5摄氏度(℃) 比所述共晶或近共晶Sn / Pb合金粉末的液相线温度高5℃以上的温度。 共晶或近共晶Sn / Pb粉末占总粉末混合物的5至95重量%。 或者,并非所有包含第二组分的粉末都需要遵循该规则,只要至少30重量%。 的整个粉末混合物的固相线温度比共晶或近共晶Sn / Pb合金粉末的最高液相线温度高至少5℃。 这种焊膏导致无与伦比的固结和润湿过程,其中所有焊接接头或球通过焊料回流工艺形成在适当的接触部上并被润湿。

    Integrated passive devices
    22.
    发明申请
    Integrated passive devices 审中-公开
    集成无源器件

    公开(公告)号:US20070262418A1

    公开(公告)日:2007-11-15

    申请号:US11879632

    申请日:2007-07-18

    IPC分类号: H01L29/00

    摘要: The specification describes an integrated passive device (IPD) that is formed on a polysilicon substrate. A method for making the IPD is disclosed wherein the polysilicon substrate is produced starting with a single crystal handle wafer, depositing a thick substrate layer of polysilicon on one or both sides of the starting wafer, forming the IPD on one of the polysilicon substrate layers, and removing the handle wafer. In a preferred embodiment the single crystal silicon handle wafer is a silicon wafer rejected from a single crystal silicon wafer production line.

    摘要翻译: 本说明书描述了形成在多晶硅衬底上的集成无源器件(IPD)。 公开了一种用于制造IPD的方法,其中从单晶晶片处开始制造多晶硅衬底,在起始晶片的一侧或两侧沉积厚的多晶硅衬底层,在多晶硅衬底层之一上形成IPD, 并移除手柄晶片。 在优选实施例中,单晶硅处理晶片是从单晶硅晶片生产线排除的硅晶片。

    Methods and apparatus for testing integrated circuits
    25.
    发明授权
    Methods and apparatus for testing integrated circuits 有权
    集成电路测试方法和设备

    公开(公告)号:US06560735B1

    公开(公告)日:2003-05-06

    申请号:US09366388

    申请日:1999-08-03

    IPC分类号: G01R3128

    CPC分类号: G01R31/2853

    摘要: The specification describes an IC test apparatus having a test bed with sockets adapted to engage arrays of I/O solder balls/bumps on the IC chip. In one embodiment the sockets are provided with through holes to interconnect the solder bumps to the next board level with minimum electrical path length thereby reducing parasitic capacitive coupling. In another embodiment the sockets in the test bed are formed by intersecting V-grooves. If pairs of intersecting V-grooves are used, pyramid shaped features are produced at the bottom of each socket. Both the sharp edges formed by the intersecting V-grooves and the pyramid provide contact enhancement between the solder bumps and the test bed. The test bed can be made as a universal blank for a given solder bump pitch. The desired test circuit is formed at the next board level.

    摘要翻译: 本说明书描述了一种具有测试台的IC测试装置,其具有适于接合IC芯片上的I / O焊球/凸起阵列的插座。 在一个实施例中,插座设置有通孔,以将焊料凸块互连到具有最小电路长度的下一个电路板级,从而减少寄生电容耦合。 在另一个实施例中,试验台中的插座由V形槽相交形成。 如果使用成对的相交的V形槽,则在每个插座的底部产生金字塔形特征。 由相交的V形槽和金字塔形成的锐利边缘都提供焊料凸块和试验台之间的接触增强。 测试台可以作为给定焊料凸块间距的通用坯料。 所需的测试电路在下一个电路板级形成。

    Packaging silicon on silicon multichip modules
    26.
    发明授权
    Packaging silicon on silicon multichip modules 失效
    包装硅多芯片模块

    公开(公告)号:US06369444B1

    公开(公告)日:2002-04-09

    申请号:US09081448

    申请日:1998-05-19

    IPC分类号: H01L2334

    摘要: The specification describes interconnection assemblies for silicon-on-silicon multichip modules. The silicon-on-silicon MCMs are mounted on epoxy/glass laminates which have a coefficient of thermal expansion (CTE) that essentially matches the CTE of silicon. In the preferred embodiment the assembly is a PC card with card edge connectors, i.e. without fixed solder interlevel interconnections, so that the CTE of the epoxy laminate comprising the card can be modified without regard to potential mismatch with a mother board.

    摘要翻译: 该规范描述了硅上硅多芯片模块的互连组件。 硅上硅MCM安装在具有基本上与硅的CTE匹配的热膨胀系数(CTE)的环氧树脂/玻璃层压板上。 在优选实施例中,组件是具有卡边缘连接器的PC卡,即没有固定的焊料层间互连,使得可以修改包含卡的环氧树脂层压体的CTE,而不考虑与母板的潜在不匹配。