公开(公告)号：US20150187740A1

公开(公告)日：2015-07-02

申请号：US14141735

申请日：2013-12-27

Applicant: LuxVue Technology Corporation

Inventor： Kelly McGroddy ,  Hsin-Hua Hu ,  Andreas Bibl ,  Clayton Ka Tsun Chan

IPC: H01L25/075 ,  H01L33/06 ,  G09G3/32 ,  H01L33/30 ,  H01L33/62 ,  H01L33/00 ,  H01L33/14

CPC classification number: H01L25/0753 ,  G09G3/32 ,  H01L24/75 ,  H01L24/95 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/14 ,  H01L33/20 ,  H01L2924/0002 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/00

Abstract: A method and structure for forming an array of LED devices is disclosed. The LED devices in accordance with embodiments of the invention may include a confined current injection area in which a current spreading layer protrudes away from a cladding layer in a pillar configuration so that the cladding layer is wider than the current spreading layer pillar.

Abstract translation: 公开了一种用于形成LED器件阵列的方法和结构。 根据本发明的实施例的LED器件可以包括限流电流注入区域，其中电流扩散层以柱状构造从包覆层突出，使得包覆层比当前扩展层柱更宽。

公开(公告)号：US20150179877A1

公开(公告)日：2015-06-25

申请号：US14137856

申请日：2013-12-20

Applicant: LuxVue Technology Corporation

Inventor： Hsin-Hua Hu ,  Kelly McGroddy ,  Andreas Bibl

IPC: H01L33/06 ,  H01L33/42 ,  H01L33/40

CPC classification number: H01L33/06 ,  H01L24/75 ,  H01L24/95 ,  H01L33/0079 ,  H01L33/24 ,  H01L33/405 ,  H01L33/42

Abstract: A nanowire device and a method of forming a nanowire device that is poised for pick up and transfer to a receiving substrate are described. In an embodiment, the nanowire device includes a base layer and a nanowire on and protruding away from a first surface of the base layer. The nanowire may include a core, a shell, and an active layer between the core and the shell. A top electrode layer may be on a second surface of the base layer opposite the first surface and in electrical contact with the core, and a bottom electrode layer may be on and electrical contact with the shell. In an embodiment, the base layer is characterized by a maximum width of the micro scale, and the nanowire is characterized by a maximum width or length of the nano scale.

Abstract translation: 描述了纳米线器件和形成用于拾取和转移到接收衬底的纳米线器件的方法。 在一个实施例中，纳米线器件包括基底层和在基底层的第一表面上并远离基底层突出的纳米线。 纳米线可以包括核心，壳体和核心和壳体之间的活性层。 顶部电极层可以在与第一表面相对的基底层的第二表面上并且与芯电接触，并且底部电极层可以在壳体上并且与壳体电接触。 在一个实施例中，基层的特征在于微尺度的最大宽度，并且纳米线的特征在于纳米尺度的最大宽度或长度。

公开(公告)号：US08987765B2

公开(公告)日：2015-03-24

申请号：US13919965

申请日：2013-06-17

Applicant: LuxVue Technology Corporation

Inventor： Andreas Bibl ,  Charles R. Griggs

IPC: H01L21/56 ,  H01L21/52 ,  H01L33/48 ,  H01L33/54 ,  H01L33/60 ,  H01L33/44 ,  H01L33/08 ,  H01L33/52

CPC classification number: H01L25/167 ,  H01L24/95 ,  H01L25/0753 ,  H01L25/165 ,  H01L27/0203 ,  H01L27/124 ,  H01L27/1244 ,  H01L33/0008 ,  H01L33/06 ,  H01L33/08 ,  H01L33/20 ,  H01L33/30 ,  H01L33/44 ,  H01L33/486 ,  H01L33/52 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00

Abstract: Light emitting devices and methods of integrating micro LED devices into light emitting device are described. In an embodiment a light emitting device includes a reflective bank structure within a bank layer, and a conductive line atop the bank layer and elevated above the reflective bank structure. A micro LED device is within the reflective bank structure and a passivation layer is over the bank layer and laterally around the micro LED device within the reflective bank structure. A portion of the micro LED device and a conductive line atop the bank layer protrude above a top surface of the passivation layer.

Abstract translation: 描述了将微型LED器件集成到发光器件中的发光器件和方法。 在一个实施例中，发光器件包括在堤层内的反射堤岸结构，以及位于堤层顶部并在反射堤岸结构上方升高的导电线。 微型LED器件在反射堤结构内，钝化层位于堤层之上，并且侧向围绕反射堤坝结构内的微型LED器件。 微型LED器件的一部分和在堤层顶部的导电线突出于钝化层的顶表面之上。

公开(公告)号：US08945968B2

公开(公告)日：2015-02-03

申请号：US14312551

申请日：2014-06-23

Applicant: LuxVue Technology Corporation

Inventor： Andreas Bibl ,  Dariusz Golda

IPC: H01L21/00 ,  B81C1/00

CPC classification number: B81C1/0015 ,  B81B2203/0118 ,  B81C99/002 ,  H01L33/0095

Abstract: A compliant micro device transfer head and head array are disclosed. In an embodiment a micro device transfer head includes a spring arm having integrated electrode leads that is deflectable into a space between a base substrate and the spring arm.

Abstract translation: 公开了一种兼容的微器件传送头和头阵列。 在一个实施例中，微器件转移头包括具有可偏转到基底基板和弹簧臂之间的空间的集成电极引线的弹簧臂。

公开(公告)号：US20150021466A1

公开(公告)日：2015-01-22

申请号：US13948039

申请日：2013-07-22

Applicant: LuxVue Technology Corporation

Inventor： Andreas Bibl ,  Paul Argus Parks

IPC: H01L21/683 ,  B25J15/00 ,  H01L21/68 ,  G01D5/347

CPC classification number: B25J15/0085 ,  G01D5/347 ,  H01L21/67144 ,  H01L21/681

Abstract: Micro pick up arrays and methods for transferring micro devices from a carrier substrate are disclosed. In an embodiment, a micro pick up array alignment encoder detects relative position between a micro pick up array having an encoder scale and a target substrate having a corresponding reference scale. In an embodiment, the micro pick up array alignment encoder facilitates alignment of the micro pick up array with the target substrate.

Abstract translation: 公开了用于从载体衬底传送微器件的微拾取阵列和方法。 在一个实施例中，微拾取阵列对准编码器检测具有编码器刻度的微拾取阵列和具有相应参考刻度的目标衬底之间的相对位置。 在一个实施例中，微拾取阵列对准编码器有利于微拾取阵列与目标衬底的对准。

公开(公告)号：US20140340900A1

公开(公告)日：2014-11-20

申请号：US13894332

申请日：2013-05-14

Applicant: Luxvue Technology Corporation

Inventor： Stephen Bathurst ,  Hsin-Hua Hu ,  Andreas Bibl

IPC: H05K7/08 ,  F21K99/00

CPC classification number: F21K9/00 ,  B81C99/002 ,  H01L24/00 ,  H01L33/0095 ,  H01L2224/03002 ,  H01L2224/06181 ,  H01L2224/94 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10331 ,  H01L2924/10336 ,  H01L2924/10342 ,  H01L2924/10346 ,  H01L2924/10349 ,  H01L2924/10375 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1461 ,  Y10T29/49002 ,  H01L2224/03 ,  H01L2924/00

Abstract: A stabilization structure includes a stabilization layer on a carrier substrate. The stabilization layer includes an array of staging cavities. An array of micro devices are within the array of staging cavities. Each micro device is laterally attached to a shear release post laterally extending from a sidewall of a staging cavity. A pressure is applied to the array of micro devices from the array of transfer heads to shear the array of micro devices off the shear release posts. The sheared off micro devices are picked up from the carrier substrate using the array of transfer heads.

Abstract translation: 稳定结构包括载体基底上的稳定层。 稳定层包括分段腔阵列。 微器件阵列在分级腔阵列内。 每个微器件横向地附接到从分级腔的侧壁横向延伸的剪切释放柱。 从转移头阵列向微器件阵列施加压力以将微器件阵列剪切离开剪切释放柱。 使用转移头阵列从载体衬底拾取剪切的微器件。

公开(公告)号：US20140267683A1

公开(公告)日：2014-09-18

申请号：US13842925

申请日：2013-03-15

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： Andreas Bibl ,  Kapil V. Sakariya ,  Charles R. Griggs ,  James Michael Perkins

IPC: H05B33/10 ,  G06T7/00

CPC classification number: H01L51/50 ,  G09G3/006 ,  G09G3/3208 ,  H01L21/6835 ,  H01L24/24 ,  H01L24/32 ,  H01L24/75 ,  H01L24/82 ,  H01L24/83 ,  H01L24/97 ,  H01L27/1214 ,  H01L27/156 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/2401 ,  H01L2224/24011 ,  H01L2224/2405 ,  H01L2224/24137 ,  H01L2224/24227 ,  H01L2224/245 ,  H01L2224/29005 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/32014 ,  H01L2224/32057 ,  H01L2224/32237 ,  H01L2224/32503 ,  H01L2224/75252 ,  H01L2224/75301 ,  H01L2224/7565 ,  H01L2224/75725 ,  H01L2224/759 ,  H01L2224/7598 ,  H01L2224/82101 ,  H01L2224/82102 ,  H01L2224/82104 ,  H01L2224/83 ,  H01L2224/83005 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83805 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2224/97 ,  H01L2924/0781 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/00012 ,  H01L2924/053 ,  H01L2924/0549 ,  H01L2924/0543 ,  H01L2924/0544 ,  H01L2924/0103 ,  H01L2924/01013 ,  H01L2924/01042 ,  H01L2924/01022 ,  H01L2924/01074 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/00

Abstract: A display panel and method of manufacture are described. In an embodiment, a display substrate includes a pixel area and a non-pixel area. An array of subpixels and corresponding array of bottom electrodes are in the pixel area. An array of micro LED devices are bonded to the array of bottom electrodes. One or more top electrode layers are formed in electrical contact with the array of micro LED devices. In one embodiment a redundant pair of micro LED devices are bonded to the array of bottom electrodes. In one embodiment, the array of micro LED devices are imaged to detect irregularities.

Abstract translation: 描述了显示面板和制造方法。 在一个实施例中，显示基板包括像素区域和非像素区域。 子像素阵列和相应的底电极阵列位于像素区域中。 微型LED器件的阵列结合到底部电极阵列。 形成与微型LED器件的阵列电接触的一个或多个顶部电极层。 在一个实施例中，冗余的一对微型LED器件被结合到底部电极阵列。 在一个实施例中，微型LED器件的阵列被成像以检测不规则。

公开(公告)号：US08809875B2

公开(公告)日：2014-08-19

申请号：US13372222

申请日：2012-02-13

Applicant: Andreas Bibl ,  John A. Higginson ,  Hung-Fai Stephen Law ,  Hsin-Hua Hu

Inventor： Andreas Bibl ,  John A. Higginson ,  Hung-Fai Stephen Law ,  Hsin-Hua Hu

IPC: H01L27/15 ,  H01L29/18 ,  H01L33/00

CPC classification number: H01L33/06 ,  F21V7/00 ,  H01L25/0753 ,  H01L27/15 ,  H01L29/0684 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/20 ,  H01L33/28 ,  H01L33/30 ,  H01L2224/95

Abstract: A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate.

Abstract translation: 描述了微型发光二极管（LED）和形成用于传送到接收基板的微型LED阵列的方法。 微型LED结构可以包括微型p-n二极管和金属化层，金属化层位于微型p-n二极管和结合层之间。 保形介质阻挡层可以跨越微型p-n二极管的侧壁。 微型LED结构和微型LED阵列可以被拾取并转移到接收衬底。

公开(公告)号：US20140159043A1

公开(公告)日：2014-06-12

申请号：US13842793

申请日：2013-03-15

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： Kapil V. Sakariya ,  Andreas Bibl ,  Hsin-Hua Hu

IPC: H01L33/62 ,  H01L29/786

CPC classification number: H01L27/156 ,  G09G3/32 ,  H01L24/95 ,  H01L25/0753 ,  H01L27/124 ,  H01L33/20 ,  H01L33/42 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/00

Abstract: A display panel and a method of forming a display panel are described. The display panel may include a thin film transistor substrate including a pixel area and a non-pixel area. The pixel area includes an array of bank openings and an array of bottom electrodes within the array of bank openings. A ground line is located in the non-pixel area and an array of ground tie lines run between the bank openings in the pixel area and are electrically connected to the ground line in the non-pixel area.

Abstract translation: 描述显示面板和形成显示面板的方法。 显示面板可以包括包括像素区域和非像素区域的薄膜晶体管基板。 像素区域包括堤开口的阵列和堤开口阵列内的一组底部电极。 接地线位于非像素区域中，并且阵列阵列在像素区域中的堤开口之间延伸并且电连接到非像素区域中的接地线。

公开(公告)号：US20140061687A1

公开(公告)日：2014-03-06

申请号：US14071106

申请日：2013-11-04

Applicant: LuxVue Technology Corporation

Inventor： Hsin-Hua Hu ,  Andreas Bibl ,  John A. Higginson ,  Hung-Fai Stephen Law

IPC: H01L33/08

CPC classification number: H01L33/08 ,  H01L21/67144 ,  H01L24/75 ,  H01L24/83 ,  H01L24/95 ,  H01L27/156 ,  H01L33/0079 ,  H01L33/405 ,  H01L2224/7598 ,  H01L2224/83 ,  H01L2224/95145 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

Abstract: A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, an electrically insulating layer is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes. In an embodiment, an electrically conductive intermediate bonding layer is utilized during the formation and transfer of the micro devices to the receiving substrate.

Abstract translation: 描述了将微器件和微器件阵列制造和传送到接收衬底的方法。 在一个实施例中，在蚀刻p-n二极管层以形成多个微p-n二极管期间，电绝缘层被用作蚀刻停止层。 在一个实施例中，在将微器件形成和传送到接收衬底期间，使用导电中间接合层。