公开(公告)号：US09991242B2

公开(公告)日：2018-06-05

申请号：US14620184

申请日：2015-02-11

申请人： FUJI ELECTRIC CO., LTD.

发明人： Kenichiro Sato

IPC分类号： H01L23/00 ,  H01L25/18 ,  H01L21/67 ,  H01L23/495 ,  H01L25/00 ,  H01L25/07

CPC分类号： H01L25/18 ,  H01L21/67121 ,  H01L21/67259 ,  H01L23/49541 ,  H01L23/49579 ,  H01L24/05 ,  H01L24/09 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/49 ,  H01L24/77 ,  H01L24/84 ,  H01L24/85 ,  H01L25/072 ,  H01L25/50 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/40227 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/73221 ,  H01L2224/73271 ,  H01L2224/77272 ,  H01L2224/77702 ,  H01L2224/77705 ,  H01L2224/80121 ,  H01L2224/80136 ,  H01L2224/80815 ,  H01L2224/85121 ,  H01L2224/85136 ,  H01L2224/85801 ,  H01L2924/00014 ,  H01L2924/13055 ,  H01L2924/172 ,  H01L2924/17724 ,  H01L2924/17747 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00 ,  H01L2924/207

摘要： A semiconductor device has a plurality of small-sized semiconductor chips disposed between an insulated circuit board having a conductive pattern and a terminal. The semiconductor device exhibits a high accuracy in positioning the semiconductor chips. The semiconductor device includes an insulated circuit board having a conductive pattern, a first semiconductor chip with a rectangular shape connected to the conductive pattern through a first joining material, a second semiconductor chip with a rectangular shape, disposed on the conductive pattern separated from the first semiconductor chip and connected to the conductive pattern through a second joining material, and a terminal disposed above the first semiconductor chip and the second semiconductor chip, connected to the first semiconductor chip through a third joining material, and connected to the second semiconductor chip through a fourth joining material. The terminal has a through-hole above a place between the first semiconductor chip and the second semiconductor chip.

公开(公告)号：US09455238B2

公开(公告)日：2016-09-27

申请号：US14223994

申请日：2014-03-24

申请人： HONDA MOTOR CO., LTD.

发明人： Asako Yoneguchi ,  Toshitake Ohnishi ,  Yasuhiro Maeda ,  Hitoshi Nishio ,  Yoshinobu Suhara ,  Ryo Imagawa

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00

CPC分类号： H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/75 ,  H01L24/77 ,  H01L24/83 ,  H01L24/84 ,  H01L2224/29101 ,  H01L2224/32225 ,  H01L2224/37013 ,  H01L2224/371 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/75272 ,  H01L2224/77272 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/84138 ,  H01L2224/84801 ,  H01L2224/84815 ,  H01L2224/849 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2924/014

摘要： A power converter includes a bus bar, a semiconductor device, a lead, and solder. The bus bar has a vertical wall. The semiconductor device includes an electrode. The lead has one end connected to the bus bar and another end connected to the semiconductor device to supply power from the bus bar to the electrode of the semiconductor device via the lead. The one end of the lead includes a bending part which is spaced away from the bus bar by a predetermined distance and which is inclined in a vertical downward direction. The vertical wall of the bus bar and the bending part are bonded to each other via the solder. The vertical wall extends in a substantially vertical direction to face the bending part.

摘要翻译： 功率转换器包括母线，半导体器件，引线和焊料。 母线有一个垂直的墙壁。 半导体器件包括电极。 引线的一端连接到母线，另一端连接到半导体器件，以通过引线从母线向半导体器件的电极供电。 引线的一端包括弯曲部分，其与母线间隔开预定距离并且在垂直向下的方向上倾斜。 母线和弯曲部分的垂直壁通过焊料相互粘接。 垂直壁在基本垂直的方向上延伸以面对弯曲部分。

公开(公告)号：US20150076570A1

公开(公告)日：2015-03-19

申请号：US14127187

申请日：2013-05-27

申请人： NSK LTD.

发明人： Takashi Sunaga ,  Noboru Kaneko ,  Osamu Miyoshi

IPC分类号： H01L23/00 ,  H01L29/78

CPC分类号： H01L24/43 ,  H01L23/3735 ,  H01L23/49811 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/75 ,  H01L24/77 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/92 ,  H01L25/07 ,  H01L25/072 ,  H01L25/18 ,  H01L29/78 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/32227 ,  H01L2224/32238 ,  H01L2224/33181 ,  H01L2224/352 ,  H01L2224/35847 ,  H01L2224/3701 ,  H01L2224/37011 ,  H01L2224/37013 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40227 ,  H01L2224/40475 ,  H01L2224/40499 ,  H01L2224/4103 ,  H01L2224/4112 ,  H01L2224/41175 ,  H01L2224/43848 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2224/494 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/75272 ,  H01L2224/77272 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/8321 ,  H01L2224/83424 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/84424 ,  H01L2224/84447 ,  H01L2224/84801 ,  H01L2224/84815 ,  H01L2224/85 ,  H01L2224/85815 ,  H01L2224/9221 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15724 ,  H01L2924/19105 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/3701 ,  H05K1/181 ,  H05K2201/10166 ,  H05K2201/1031 ,  H05K2201/10409 ,  Y02P70/611 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2224/83 ,  H01L2224/84 ,  H01L2224/33 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/48227

摘要： There is provided a semiconductor module and a method for manufacturing the same which make it possible to joint the electrode of the bare-chip transistor and the wiring pattern on the substrate by solder mounting operation, in the same process of solder mounting operation for mounting the bare-chip transistor or other surface mounting devices on the wiring patterns on the substrate. A semiconductor module includes: a plurality of wiring patterns formed on an insulating layer; a bare-chip transistor mounted on one wiring pattern out of the plurality of wiring patterns via a solder; and a copper connector constituted of a copper plate for jointing an electrode formed on a top surface of the bare-chip transistor and another wiring pattern out of the plurality of wiring patterns via a solder.

摘要翻译： 提供了一种半导体模块及其制造方法，其可以通过焊接安装操作将裸芯片晶体管的电极和布线图案与基板上的布线图案相连接，在相同的焊接安装操作过程中， 裸芯片晶体管或其他表面安装器件在基板上的布线图案上。 半导体模块包括：形成在绝缘层上的多个布线图案; 通过焊料在多个布线图案中安装在一个布线图案上的裸芯片晶体管; 以及铜连接器，其由用于通过焊料将形成在裸芯片晶体管的顶表面上的电极和多个布线图案中的另一布线图案连接的铜板构成。

公开(公告)号：US20130284794A1

公开(公告)日：2013-10-31

申请号：US13772208

申请日：2013-02-20

申请人： SANYO Electric Co., Ltd.

发明人： Takashi SUZUKI ,  Kouichi SAITOU ,  Yasuyuki YANASE

IPC分类号： B23K20/24 ,  B23K20/02

CPC分类号： B23K20/24 ,  B23K20/023 ,  B23K20/10 ,  B23K20/16 ,  B23K20/233 ,  B23K2101/42 ,  B23K2103/12 ,  H01L24/77 ,  H01L24/84 ,  H01L2224/37012 ,  H01L2224/37147 ,  H01L2224/7701 ,  H01L2224/773 ,  H01L2224/77621 ,  H01L2224/84002 ,  H01L2224/84011 ,  H01L2224/841 ,  H01L2224/84203 ,  H01L2224/84897 ,  H01L2924/00014

摘要： The metal bonding apparatus comprises: a solution supply unit configured to supply a solution which is able to elute an oxide with copper oxide as a principal component, to at least one of a first bonding portion and a second bonding portion; a pressing unit configured to apply pressure to the first bonding portion and the second bonding portion so as to sandwich the solution between the first bonding portion and the second bonding portion, and in a direction in which a distance between the first bonding portion and the second bonding portion is reduced; and a heating unit configured to heat the first bonding portion and the second bonding portion, wherein the first bonding portion and the second bonding portion are bonded by the pressure applied by the pressing unit and the heat from the heating unit.

摘要翻译： 金属接合装置包括：溶液供给单元，被配置为将能够以氧化铜作为主要成分洗脱氧化物的溶液供给到第一接合部和第二接合部中的至少一个; 压力单元，其构造成对所述第一接合部和所述第二接合部施加压力，以将所述溶液夹在所述第一接合部和所述第二接合部之间，并且在所述第一接合部和所述第二接合部之间的距离 结合部分减少; 以及加热单元，其构造成加热所述第一接合部和所述第二接合部，其中，所述第一接合部和所述第二接合部通过由所述加压单元施加的压力和来自所述加热单元的热而接合。

公开(公告)号：US08450149B2

公开(公告)日：2013-05-28

申请号：US13301699

申请日：2011-11-21

申请人： Jaime A. Bayan ,  James D. Broiles

发明人： Jaime A. Bayan ,  James D. Broiles

IPC分类号： H01L21/00

CPC分类号： H01L23/49537 ,  H01L21/4842 ,  H01L23/3107 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/33 ,  H01L24/40 ,  H01L24/41 ,  H01L24/75 ,  H01L24/77 ,  H01L24/83 ,  H01L24/84 ,  H01L24/97 ,  H01L2224/32245 ,  H01L2224/40145 ,  H01L2224/40245 ,  H01L2224/48247 ,  H01L2224/73263 ,  H01L2224/757 ,  H01L2224/777 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/8385 ,  H01L2224/84138 ,  H01L2224/84801 ,  H01L2224/84815 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  Y10T29/41 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/37099

摘要： Methods and systems are described for enabling the efficient fabrication of small form factor power converter packages and other devices using stacked leadframes.

摘要翻译： 描述了用于使得能够有效地制造使用堆叠引线框架的小尺寸功率转换器封装和其它器件的方法和系统。

公开(公告)号：US20120119343A1

公开(公告)日：2012-05-17

申请号：US13301699

申请日：2011-11-21

申请人： Jaime A. Bayan ,  James D. Broiles

发明人： Jaime A. Bayan ,  James D. Broiles

IPC分类号： H01L23/495 ,  H01L21/50 ,  H01L21/56 ,  H01L21/60

CPC分类号： H01L23/49537 ,  H01L21/4842 ,  H01L23/3107 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/33 ,  H01L24/40 ,  H01L24/41 ,  H01L24/75 ,  H01L24/77 ,  H01L24/83 ,  H01L24/84 ,  H01L24/97 ,  H01L2224/32245 ,  H01L2224/40145 ,  H01L2224/40245 ,  H01L2224/48247 ,  H01L2224/73263 ,  H01L2224/757 ,  H01L2224/777 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/8385 ,  H01L2224/84138 ,  H01L2224/84801 ,  H01L2224/84815 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  Y10T29/41 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/37099

摘要： Methods and systems are described for enabling the efficient fabrication of small form factor power converter packages and other devices using stacked leadframes.

摘要翻译： 描述了用于使得能够有效地制造使用堆叠引线框架的小尺寸功率转换器封装和其它器件的方法和系统。

公开(公告)号：US20100323476A1

公开(公告)日：2010-12-23

申请号：US12853970

申请日：2010-08-10

申请人： Masataka NANBA ,  Shigeru Tanabe

发明人： Masataka NANBA ,  Shigeru Tanabe

IPC分类号： H01L21/607

CPC分类号： H01L24/77 ,  B23K20/10 ,  B23K2101/40 ,  H01L23/4952 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/2919 ,  H01L2224/37011 ,  H01L2224/37124 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/84205 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/206

摘要： An ultrasonic bonding equipment for manufacturing a semiconductor device comprises a tip portion. The tip portion has a top surface which is faced to a member to be bonded, and propagates an ultrasonic vibration to the top surface. A plurality of protruding portions are provided on the top surface. Each of the protruding portions has: a first pair of opposite side surfaces inclined with respect to the top surface; and a second pair of opposite side surfaces substantially vertical to the top surface. A semiconductor device comprises: a semiconductor chip; a lead; and a bonding strap electrically connecting the semiconductor chip and the lead. A recess is formed on an upper surface of the bonding strap in at least one of a first region where the bonding strap and the semiconductor chip are connected and a second region where the bonding strap and the lead is connected. A first pair of opposite side surfaces of the recess are inclined with respect to the upper surface of the bonding strap, and a second pair of opposite side surfaces of the recess are substantially vertical to the upper surface of the bonding strap.

摘要翻译： 用于制造半导体器件的超声波接合设备包括尖端部分。 尖端部分具有面向要接合的构件的顶表面，并且将超声波振动传播到顶表面。 在顶面设有多个突出部。 每个突出部分具有：相对于顶表面倾斜的第一对相对侧表面; 以及基本上垂直于顶表面的第二对相对侧表面。 半导体器件包括：半导体芯片; 铅; 以及电连接半导体芯片和引线的接合带。 在接合带和半导体芯片连接的第一区域和连接带和引线连接的第二区域中的至少一个中，在接合带的上表面上形成凹部。 凹槽的第一对相对侧表面相对于粘合带的上表面倾斜，并且凹槽的第二对相对的侧表面基本上垂直于粘合带的上表面。

公开(公告)号：US20090001135A1

公开(公告)日：2009-01-01

申请号：US12163158

申请日：2008-06-27

申请人： Makoto Kishimoto ,  Osamu Usuda

发明人： Makoto Kishimoto ,  Osamu Usuda

IPC分类号： B23K20/10

CPC分类号： B23K20/10 ,  B23K2101/40 ,  H01L24/37 ,  H01L24/40 ,  H01L24/77 ,  H01L24/84 ,  H01L2224/37147 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84205 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor manufacturing apparatus operable to simultaneously apply supersonic vibration to two bonding sites located at different heights to simultaneously perform bonding of the two bonding sites, the apparatus includes: a cylindrical body; a first protrusion provided on an outer peripheral surface of the cylindrical body and receiving supersonic vibration propagated through the cylindrical body; and a second protrusion provided on the outer peripheral surface of the cylindrical body and receiving supersonic vibration propagated through the cylindrical body. A distance between an axial center of the cylindrical body and the tip of the first protrusion is generally equal to the distance between the axial center of the cylindrical body and the tip of the second protrusion. A tip surface of the first protrusion and a tip surface of the second protrusion are on different planes, respectively.

摘要翻译： 一种半导体制造装置，其可操作以对位于不同高度的两个结合位置同时施加超音速振动，以同时进行所述两个结合位置的结合，所述装置包括：圆柱体; 设置在所述圆筒体的外周面上并且接收通过所述圆筒体传播的超音速振动的第一突起; 以及设置在所述圆筒体的外周面上并且接收通过所述圆筒体传播的超音速振动的第二突起。 圆柱体的轴心与第一突起的前端之间的距离通常等于圆柱体的轴心与第二突起的尖端之间的距离。 第一突起的尖端表面和第二突起的尖端表面分别在不同的平面上。

公开(公告)号：US07364950B2

公开(公告)日：2008-04-29

申请号：US11551383

申请日：2006-10-20

申请人： Norihide Funato ,  Masataka Nanba ,  Hiroshi Sawano

发明人： Norihide Funato ,  Masataka Nanba ,  Hiroshi Sawano

IPC分类号： H01L21/00

CPC分类号： H01L24/84 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/77 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/2919 ,  H01L2224/37011 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/7865 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/84205 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/85205 ,  H01L2224/85895 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

摘要： A semiconductor device is provided including a semiconductor element having a plurality of electrodes, a plurality of bonding portions of a lead frame, a plate-like current path material which electrically connects at least one of the plurality of electrodes and one of the plurality of bonding portions, a housing which packages the semiconductor element having the plurality of electrodes, the plurality of bonding portions of the lead frame, and the current path material, wherein the plate-like current path material is arranged to be directly bonded to one of the plurality of electrodes and one of the plurality of bonding portions, and the middle portion of the current path material is formed apart from the surface of the semiconductor element. A method of manufacturing the same is also provided.

摘要翻译： 提供一种半导体器件，其包括具有多个电极的半导体元件，引线框架的多个接合部分，电连接多个电极中的至少一个电极和多个接合中的一个的板状电流通路材料 部分，封装具有多个电极的半导体元件，引线框架的多个接合部分和电流通路材料的壳体，其中板状电流通路材料被布置成直接接合到多个电极中的一个 的电极和多个接合部中的一个，并且电流通路材料的中间部分形成为与半导体元件的表面分开。 还提供了一种制造该方法的方法。

公开(公告)号：US07245026B2

公开(公告)日：2007-07-17

申请号：US10174057

申请日：2002-06-17

申请人： Rudolf Lehner

发明人： Rudolf Lehner

IPC分类号： H01L23/48

CPC分类号： H01L24/744 ,  B23K2101/40 ,  H01L24/37 ,  H01L24/40 ,  H01L24/77 ,  H01L24/84 ,  H01L2224/37124 ,  H01L2224/37144 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/19042

摘要： A configuration and method for contacting a circuit is described. A carrier is disposed adjacent a circuit, and a setting element at which an electrical connection formed of a conductive material is disposed, so that the electrical connection connects the circuit to the carrier in a bonding process. In this manner an efficient and cost effective method for connecting the circuit to carrier is performed.

摘要翻译： 描述用于接触电路的配置和方法。 载体邻近电路设置，并且设置由导电材料形成的电连接的设置元件，使得电连接在接合过程中将电路连接到载体。 以这种方式，执行用于将电路连接到载体的有效且成本有效的方法。