公开(公告)号：US20100213618A1

公开(公告)日：2010-08-26

申请号：US12775338

申请日：2010-05-06

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

IPC分类号： H01L23/538 ,  H01L23/52

CPC分类号： H01L23/481 ,  H01L21/50 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3157 ,  H01L24/18 ,  H01L24/19 ,  H01L24/48 ,  H01L24/73 ,  H01L24/82 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2224/02371 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/18 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82005 ,  H01L2224/82039 ,  H01L2224/9222 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by providing a first semiconductor wafer having semiconductor die. A gap is made between the semiconductor die. An insulating material is deposited in the gap. A portion of the insulating material is removed to form a first through hole via (THV). A conductive lining is conformally deposited in the first THV. A solder material is disposed above the conductive lining of the first THV. A second semiconductor wafer having semiconductor die is disposed over the first wafer. A second THV is formed in a gap between the die of the second wafer. A conductive lining is conformally deposited in the second THV. A solder material is disposed above the second THV. The second THV is aligned to the first THV. The solder material is reflowed to form the conductive vias within the gap. The gap is singulated to separate the semiconductor die.

摘要翻译： 通过提供具有半导体管芯的第一半导体晶片来制造半导体器件。 在半导体管芯之间形成间隙。 绝缘材料沉积在间隙中。 去除绝缘材料的一部分以形成通过（THV）的第一通孔。 导电衬里共形沉积在第一个THV中。 焊料材料设置在第一THV的导电衬里之上。 具有半导体管芯的第二半导体晶片设置在第一晶片上。 第二THV形成在第二晶片的管芯之间的间隙中。 导电衬里共形沉积在第二个THV中。 焊料材料设置在第二THV之上。 第二个THV与第一个THV对齐。 焊料材料被回流以在间隙内形成导电通孔。 将间隙分开以分离半导体管芯。

公开(公告)号：US07776655B2

公开(公告)日：2010-08-17

申请号：US12331682

申请日：2008-12-10

申请人： Byung Tai Do ,  Reza A. Pagaila ,  Linda Pei Ee Chua

发明人： Byung Tai Do ,  Reza A. Pagaila ,  Linda Pei Ee Chua

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L23/49816 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/3107 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/16 ,  H01L24/48 ,  H01L25/105 ,  H01L2221/68327 ,  H01L2221/68372 ,  H01L2224/02313 ,  H01L2224/02333 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13184 ,  H01L2224/48137 ,  H01L2224/4823 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2224/13099 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor wafer contains a plurality of semiconductor die each having a peripheral area around the die. A first insulating layer is formed over the die. A recessed region with angled sidewall is formed in the peripheral area. A first conductive layer is formed over the first insulating layer outside the recessed region and further into the recessed region. A conductive pillar is formed over the first conductive layer within the recessed region. A second insulating layer is formed over the first insulating layer, conductive pillar, and first conductive layer such that the conductive pillar is exposed from the second insulating layer. A dicing channel partially through the peripheral area. The semiconductor wafer undergoes backgrinding to the dicing channel to singulate the semiconductor wafer and separate the semiconductor die. The semiconductor die can be disposed in a semiconductor package with other components and electrically interconnected through the conductive pillar.

摘要翻译： 半导体晶片包含多个半导体管芯，每个半导体管芯具有围绕管芯的周边区域。 在模具上形成第一绝缘层。 具有成角度侧壁的凹陷区域形成在周边区域中。 第一导电层形成在凹陷区域外部的第一绝缘层的上方，并且进一步进入凹陷区域。 导电柱形成在凹陷区域内的第一导电层的上方。 在第一绝缘层，导电柱和第一导电层上形成第二绝缘层，使得导电柱从第二绝缘层露出。 切割通道部分通过周边区域。 半导体晶片经历对切割通道的后研磨，以切割半导体晶片并分离半导体管芯。 半导体管芯可以被设置在具有其它部件的半导体封装中并通过导电柱电互连。

公开(公告)号：US20100007029A1

公开(公告)日：2010-01-14

申请号：US12172817

申请日：2008-07-14

申请人： Byung Tai Do ,  Heap Hoe Kuan ,  Reza A. Pagaila ,  Linda Pei Ee Chua

发明人： Byung Tai Do ,  Heap Hoe Kuan ,  Reza A. Pagaila ,  Linda Pei Ee Chua

IPC分类号： H01L23/52 ,  H01L21/00

CPC分类号： H01L24/82 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3114 ,  H01L24/19 ,  H01L24/24 ,  H01L24/48 ,  H01L2221/68345 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/82001 ,  H01L2224/82039 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor die has a peripheral region around the die. An insulating layer is formed over the semiconductor die. A portion of the insulating layer and peripheral is removed to form a recess around the semiconductor die. A conductive layer is deposited over the insulating layer and recess. The conductive layer is electrically connected to contact pads on the semiconductor die and conforms to a step into the recess. A gap is created through the conductive layer and peripheral region around the semiconductor die. An insulating material is deposited in the gap. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. The conductive THV is recessed with respect to a surface of the semiconductor die. The conductive THV is electrically connected to the conductive layer.

摘要翻译： 半导体管芯具有围绕管芯的周边区域。 在半导体管芯上形成绝缘层。 去除绝缘层和周边的一部分以在半导体管芯周围形成凹陷。 导电层沉积在绝缘层和凹部上。 导电层电连接到半导体管芯上的接触焊盘，并符合入凹槽的步骤。 通过半导体管芯周围的导电层和周边区域产生间隙。 绝缘材料沉积在间隙中。 绝缘材料的一部分被去除以形成通孔（THV）。 导电材料沉积在THV中以形成导电THV。 导电THV相对于半导体管芯的表面凹陷。 导电THV与导电层电连接。

公开(公告)号：US20090294914A1

公开(公告)日：2009-12-03

申请号：US12127417

申请日：2008-05-27

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

IPC分类号： H01L23/538 ,  H01L21/58

CPC分类号： H01L23/481 ,  H01L21/50 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3157 ,  H01L24/18 ,  H01L24/19 ,  H01L24/48 ,  H01L24/73 ,  H01L24/82 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2224/02371 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/18 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82005 ,  H01L2224/82039 ,  H01L2224/9222 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by providing a first semiconductor wafer having semiconductor die. A gap is made between the semiconductor die. An insulating material is deposited in the gap. A portion of the insulating material is removed to form a first through hole via (THV). A conductive lining is conformally deposited in the first THV. A solder material is disposed above the conductive lining of the first THV. A second semiconductor wafer having semiconductor die is disposed over the first wafer. A second THV is formed in a gap between the die of the second wafer. A conductive lining is conformally deposited in the second THV. A solder material is disposed above the second THV. The second THV is aligned to the first THV. The solder material is reflowed to form the conductive vias within the gap. The gap is singulated to separate the semiconductor die.

摘要翻译： 通过提供具有半导体管芯的第一半导体晶片来制造半导体器件。 在半导体管芯之间形成间隙。 绝缘材料沉积在间隙中。 去除绝缘材料的一部分以形成通过（THV）的第一通孔。 导电衬里共形沉积在第一个THV中。 焊料材料设置在第一THV的导电衬里之上。 具有半导体管芯的第二半导体晶片设置在第一晶片上。 第二THV形成在第二晶片的管芯之间的间隙中。 导电衬里共形沉积在第二个THV中。 焊料材料设置在第二THV之上。 第二个THV与第一个THV对齐。 焊料材料被回流以在间隙内形成导电通孔。 将间隙分开以分离半导体管芯。

公开(公告)号：US10388584B2

公开(公告)日：2019-08-20

申请号：US13225683

申请日：2011-09-06

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

IPC分类号： H01L23/31 ,  H01L21/56 ,  H04B1/00 ,  H04B7/14 ,  H01L23/00 ,  H01L23/498 ,  H01L23/538 ,  H01L25/065 ,  H01L25/00 ,  H01L25/10 ,  H01L23/29 ,  H01L25/03

摘要： A semiconductor device has a temporary layer, such as a dam material or adhesive layer, formed over a carrier. A plurality of recesses is formed in the temporary layer. A first semiconductor die is mounted within the recesses of the temporary layer. An encapsulant is deposited over the first semiconductor die and temporary layer. The encapsulant extends into the recesses in the temporary layer. The carrier and temporary layer are removed to form recessed interconnect areas around the first semiconductor die. Alternatively, the recessed interconnect areas can be formed the carrier or encapsulant. Multiple steps can be formed in the recesses of the temporary layer. A conductive layer is formed over the first semiconductor die and encapsulant and into the recessed interconnect areas. A second semiconductor die can be mounted on the first semiconductor die. The semiconductor device can be integrated into PiP and Fi-PoP arrangements.

公开(公告)号：US09343429B2

公开(公告)日：2016-05-17

申请号：US12683008

申请日：2010-01-06

申请人： Reza A. Pagaila ,  Byung Tai Do

发明人： Reza A. Pagaila ,  Byung Tai Do

IPC分类号： H01L23/544 ,  H01L25/065 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00 ,  H01L25/03 ,  H01L23/48

CPC分类号： H01L25/0657 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/481 ,  H01L24/18 ,  H01L24/19 ,  H01L24/48 ,  H01L25/03 ,  H01L2224/04105 ,  H01L2224/18 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/9222 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06551 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by creating a gap between semiconductor die on a wafer. An insulating material is deposited in the gap. A first portion of the insulating material is removed from a first side of the semiconductor wafer to form a first notch. The first notch is less than a thickness of the semiconductor die. A conductive material is deposited into the first notch to form a first portion of the conductive via within the gap. A second portion of the insulating material is removed from a second side of the semiconductor wafer to form a second notch. The second notch extends through the insulating material to the first notch. A conductive material is deposited into the second notch to form a second portion of the conductive via within the gap. The semiconductor wafer is singulated through the gap to separate the semiconductor die.

摘要翻译： 通过在晶片上形成半导体管芯之间的间隙来制造半导体器件。 绝缘材料沉积在间隙中。 从半导体晶片的第一侧去除绝缘材料的第一部分以形成第一凹口。 第一缺口小于半导体管芯的厚度。 导电材料沉积到第一凹口中以在间隙内形成导电通孔的第一部分。 从半导体晶片的第二侧去除绝缘材料的第二部分以形成第二凹口。 第二凹口延伸穿过绝缘材料到第一凹口。 导电材料沉积到第二凹口中以在间隙内形成导电通孔的第二部分。 半导体晶片通过间隙被分离，以分离半导体管芯。

公开(公告)号：US08946870B2

公开(公告)日：2015-02-03

申请号：US13349510

申请日：2012-01-12

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

IPC分类号： H01L23/48 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L25/03 ,  H01L25/065

CPC分类号： H01L23/5386 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/768 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/5389 ,  H01L24/18 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/074 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/0557 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/20 ,  H01L2224/32145 ,  H01L2224/73253 ,  H01L2224/73259 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/82 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/83 ,  H01L2924/00012

摘要： A semiconductor die has a first semiconductor die mounted to a carrier. A plurality of conductive pillars is formed over the carrier around the first die. An encapsulant is deposited over the first die and conductive pillars. A first stepped interconnect layer is formed over a first surface of the encapsulant and first die. The first stepped interconnect layer has a first opening. A second stepped interconnect layer is formed over the first stepped interconnect layer. The second stepped interconnect layer has a second opening. The carrier is removed. A build-up interconnect structure is formed over a second surface of the encapsulant and first die. A second semiconductor die over the first semiconductor die and partially within the first opening. A third semiconductor die is mounted over the second die and partially within the second opening. A fourth semiconductor die is mounted over the second stepped interconnect layer.

摘要翻译： 半导体管芯具有安装到载体上的第一半导体管芯。 在第一管芯周围的载体上形成多个导电柱。 密封剂沉积在第一管芯和导电柱上。 在密封剂和第一模具的第一表面上形成第一阶梯式互连层。 第一阶梯式互连层具有第一开口。 第二阶梯式互连层形成在第一阶梯式互连层上。 第二阶梯式互连层具有第二开口。 载体被移除。 在密封剂和第一模具的第二表面上形成积聚互连结构。 第一半导体管芯上的第二半导体管芯，并且部分地在第一开口内。 第三半导体管芯安装在第二管芯上并部分地在第二开口内。 第四半导体管芯安装在第二阶梯式互连层上。

公开(公告)号：US08940636B2

公开(公告)日：2015-01-27

申请号：US13273537

申请日：2011-10-14

申请人： Reza A. Pagaila ,  Zigmund R. Camacho ,  Lionel Chien Hui Tay ,  Byung Tai Do

发明人： Reza A. Pagaila ,  Zigmund R. Camacho ,  Lionel Chien Hui Tay ,  Byung Tai Do

IPC分类号： H01L21/44 ,  H01L21/683 ,  H01L21/56 ,  H01L23/31 ,  H01L23/538 ,  H01L23/00 ,  H01L25/065 ,  H01L25/10 ,  H01L25/00

CPC分类号： H01L21/6835 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/5389 ,  H01L24/12 ,  H01L24/13 ,  H01L24/19 ,  H01L24/25 ,  H01L24/28 ,  H01L24/81 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68372 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05009 ,  H01L2224/0557 ,  H01L2224/12105 ,  H01L2224/13009 ,  H01L2224/13099 ,  H01L2224/16147 ,  H01L2224/16237 ,  H01L2224/19 ,  H01L2224/24011 ,  H01L2224/32145 ,  H01L2224/73267 ,  H01L2224/81141 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2224/82039 ,  H01L2224/9202 ,  H01L2224/92244 ,  H01L2225/06551 ,  H01L2225/06558 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2224/83005

摘要： A semiconductor package includes a semiconductor wafer having a plurality of semiconductor die. A contact pad is formed over and electrically connected to an active surface of the semiconductor die. A gap is formed between the semiconductor die. An insulating material is deposited in the gap between the semiconductor die. An adhesive layer is formed over a surface of the semiconductor die and the insulating material. A via is formed in the insulating material and the adhesive layer. A conductive material is deposited in the via to form a through hole via (THV). A conductive layer is formed over the contact pad and the THV to electrically connect the contact pad and the THV. The plurality of semiconductor die is singulated. The insulating material can include an organic material. The active surface of the semiconductor die can include an optical device.

摘要翻译： 半导体封装包括具有多个半导体管芯的半导体晶片。 接触垫形成在半导体管芯的有源表面上并电连接到半导体管芯的有源表面。 在半导体管芯之间形成间隙。 绝缘材料沉积在半导体管芯之间的间隙中。 在半导体管芯和绝缘材料的表面上形成粘合剂层。 在绝缘材料和粘合剂层中形成通孔。 导电材料沉积在通孔中以形成通孔（THV）。 在接触焊盘和THV上形成导电层，以电连接接触焊盘和THV。 多个半导体管芯被切割。 绝缘材料可以包括有机材料。 半导体管芯的有源表面可以包括光学器件。

公开(公告)号：US08378383B2

公开(公告)日：2013-02-19

申请号：US12411310

申请日：2009-03-25

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Nathapong Suthiwongsunthorn

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Nathapong Suthiwongsunthorn

IPC分类号： H01L30/134

CPC分类号： H01L23/552 ,  H01L21/568 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/50 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/48 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/50 ,  H01L2223/6677 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/85 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device has a first semiconductor die with a shielding layer formed over its back surface. The first semiconductor die is mounted to a carrier. A first insulating layer is formed over the shielding layer. A second semiconductor die is mounted over the first semiconductor die separated by the shielding layer and first insulating layer. A second insulating layer is deposited over the first and second semiconductor die. A first interconnect structure is formed over the second semiconductor die and second insulating layer. A second interconnect structure is formed over the first semiconductor die and second insulating layer. The shielding layer is electrically connected to a low-impedance ground point through a bond wire, RDL, or TSV. The second semiconductor die may also have a shielding layer formed on its back surface. The semiconductor die are bonded through the metal-to-metal shielding layers.

摘要翻译： 半导体器件具有形成在其背面上的屏蔽层的第一半导体管芯。 第一半导体管芯安装到载体上。 在屏蔽层上形成第一绝缘层。 第二半导体管芯安装在由屏蔽层和第一绝缘层隔开的第一半导体管芯上。 在第一和第二半导体管芯上沉积第二绝缘层。 在第二半导体管芯和第二绝缘层上形成第一互连结构。 在第一半导体管芯和第二绝缘层上形成第二互连结构。 屏蔽层通过接合线RDL或TSV与低阻抗接地点电连接。 第二半导体管芯也可以在其背面形成有屏蔽层。 半导体管芯通过金属对金属屏蔽层接合。

公开(公告)号：US08349657B2

公开(公告)日：2013-01-08

申请号：US13423263

申请日：2012-03-18

申请人： Byung Tai Do ,  Reza A. Pagaila ,  Linda Pei Ei Chua

发明人： Byung Tai Do ,  Reza A. Pagaila ,  Linda Pei Ei Chua

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L23/49816 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/3107 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/16 ,  H01L24/48 ,  H01L25/105 ,  H01L2221/68327 ,  H01L2221/68372 ,  H01L2224/02313 ,  H01L2224/02333 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13184 ,  H01L2224/48137 ,  H01L2224/4823 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2224/13099 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor wafer contains a plurality of semiconductor die each having a peripheral area around the die. A first insulating layer is formed over the die. A recessed region with angled sidewall is formed in the peripheral area. A first conductive layer is formed over the first insulating layer outside the recessed region and further into the recessed region. A conductive pillar is formed over the first conductive layer within the recessed region. A second insulating layer is formed over the first insulating layer, conductive pillar, and first conductive layer such that the conductive pillar is exposed from the second insulating layer. A dicing channel partially through the peripheral area. The semiconductor wafer undergoes backgrinding to the dicing channel to singulate the semiconductor wafer and separate the semiconductor die. The semiconductor die can be disposed in a semiconductor package with other components and electrically interconnected through the conductive pillar.

摘要翻译： 半导体晶片包含多个半导体管芯，每个半导体管芯具有围绕管芯的周边区域。 在模具上形成第一绝缘层。 具有成角度侧壁的凹陷区域形成在周边区域中。 第一导电层形成在凹陷区域外部的第一绝缘层的上方，并且进一步进入凹陷区域。 导电柱形成在凹陷区域内的第一导电层的上方。 在第一绝缘层，导电柱和第一导电层上形成第二绝缘层，使得导电柱从第二绝缘层露出。 切割通道部分通过周边区域。 半导体晶片经历对切割通道的后研磨，以切割半导体晶片并分离半导体管芯。 半导体管芯可以被设置在具有其它部件的半导体封装中并通过导电柱电互连。