公开(公告)号：US09865482B2

公开(公告)日：2018-01-09

申请号：US13438696

申请日：2012-04-03

申请人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

发明人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

IPC分类号： H01L23/522 ,  H01L21/56 ,  H01L23/31 ,  H01L23/538 ,  H01L23/498 ,  H01L23/00

CPC分类号： H01L21/565 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/48 ,  H01L2221/68372 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/1134 ,  H01L2224/16235 ,  H01L2224/20 ,  H01L2224/24195 ,  H01L2224/2518 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by providing a temporary carrier for supporting the semiconductor device. An integrated passive device (IPD) is mounted to the temporary carrier using an adhesive. The IPD includes a capacitor and a resistor and has a plurality of through-silicon vias (TSVs). A discrete component is mounted to the temporary carrier using the adhesive. The discrete component includes a capacitor. The IPD and the discrete component are encapsulated using a molding compound. A first metal layer is formed over the molding compound. The first metal layer is connected to the TSVs of the IPD and forms an inductor. The temporary carrier and the adhesive are removed, and a second metal layer is formed over the IPD and the discrete component. The second metal layer interconnects the IPD and the discrete component and forms an inductor. An optional interconnect structure is formed over the second metal layer.

公开(公告)号：US09269598B2

公开(公告)日：2016-02-23

申请号：US13569105

申请日：2012-08-07

申请人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

发明人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

IPC分类号： H01L27/08 ,  H01L21/56 ,  H01L21/683 ,  H01L25/16 ,  H01L25/00 ,  H01L25/03 ,  H01L23/538 ,  H01L23/00

CPC分类号： H01L21/568 ,  H01L21/6835 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/81 ,  H01L25/03 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/04042 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/81001 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/04941 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/81805 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device has a first conductive layer formed over a sacrificial substrate. A first integrated passive device (IPD) is formed in a first region over the first conductive layer. A conductive pillar is formed over the first conductive layer. A high-resistivity encapsulant greater than 1.0 kohm-cm is formed over the first IPD to a top surface of the conductive pillar. A second IPD is formed over the encapsulant. The first encapsulant has a thickness of at least 50 micrometers to vertically separate the first and second IPDs. An insulating layer is formed over the second IPD. The sacrificial substrate is removed and a second semiconductor die is disposed on the first conductive layer. A first semiconductor die is formed in a second region over the substrate. A second encapsulant is formed over the second semiconductor die and a thermally conductive layer is formed over the second encapsulant.

摘要翻译： 半导体器件具有形成在牺牲衬底上的第一导电层。 第一集成无源器件（IPD）形成在第一导电层上的第一区域中。 在第一导电层上形成导电柱。 在第一IPD上形成大于1.0kohm-cm的高电阻率密封剂到导电柱的顶表面。 在密封剂上形成第二个IPD。 第一密封剂具有至少50微米的厚度以垂直分离第一和第二IPD。 绝缘层形成在第二IPD上。 去除牺牲基板，在第一导电层上设置第二半导体管芯。 第一半导体管芯形成在衬底上的第二区域中。 在第二半导体管芯上形成第二密封剂，并且在第二密封剂上形成导热层。

公开(公告)号：US08445990B2

公开(公告)日：2013-05-21

申请号：US12964810

申请日：2010-12-10

申请人： Yaojian Lin ,  Kang Chen ,  Jianmin Fang

发明人： Yaojian Lin ,  Kang Chen ,  Jianmin Fang

IPC分类号： H01L27/08

CPC分类号： H01L23/49822 ,  H01L21/568 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/19 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05552 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/12105 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/20 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/19104 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/00

摘要： A semiconductor device has an adhesive layer formed over a carrier. A semiconductor die has bumps formed over an active surface of the semiconductor die. The semiconductor die is mounted to the carrier with the bumps partially disposed in the adhesive layer to form a gap between the semiconductor die and adhesive layer. An encapsulant is deposited over the semiconductor die and within the gap between the semiconductor die and adhesive layer. The carrier and adhesive layer are removed to expose the bumps from the encapsulant. An insulating layer is formed over the encapsulant. A conductive layer is formed over the insulating layer in a wound configuration to exhibit inductive properties and electrically connected to the bumps. The conductive layer is partially disposed within a footprint of the semiconductor die. The conductive layer has a separation from the semiconductor die as determined by the gap and insulating layer.

摘要翻译： 半导体器件具有形成在载体上的粘合层。 半导体管芯具有在半导体管芯的有效表面上形成的凸块。 半导体管芯安装到载体上，凸起部分地设置在粘合剂层中，以在半导体管芯和粘合剂层之间形成间隙。 密封剂沉积在半导体管芯上并且在半导体管芯和粘合剂层之间的间隙内。 去除载体和粘合剂层以从密封剂露出凸块。 绝缘层形成在密封剂上。 导电层以缠绕构型形成在绝缘层上，以呈现电感性能并与凸点电连接。 导电层部分地设置在半导体管芯的覆盖区内。 由间隙和绝缘层确定的导电层具有与半导体管芯的分离。

公开(公告)号：US20120292738A1

公开(公告)日：2012-11-22

申请号：US13569105

申请日：2012-08-07

申请人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

发明人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

IPC分类号： H01L27/06

CPC分类号： H01L21/568 ,  H01L21/6835 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/81 ,  H01L25/03 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/04042 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/81001 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/04941 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/81805 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device has a first conductive layer formed over a sacrificial substrate. A first integrated passive device (IPD) is formed in a first region over the first conductive layer. A conductive pillar is formed over the first conductive layer. A high-resistivity encapsulant greater than 1.0 kohm-cm is formed over the first IPD to a top surface of the conductive pillar. A second IPD is formed over the encapsulant. The first encapsulant has a thickness of at least 50 micrometers to vertically separate the first and second IPDs. An insulating layer is formed over the second IPD. The sacrificial substrate is removed and a second semiconductor die is disposed on the first conductive layer. A first semiconductor die is formed in a second region over the substrate. A second encapsulant is formed over the second semiconductor die and a thermally conductive layer is formed over the second encapsulant.

摘要翻译： 半导体器件具有形成在牺牲衬底上的第一导电层。 第一集成无源器件（IPD）形成在第一导电层上的第一区域中。 在第一导电层上形成导电柱。 在第一IPD上形成大于1.0kohm-cm的高电阻率密封剂到导电柱的顶表面。 在密封剂上形成第二个IPD。 第一密封剂具有至少50微米的厚度以垂直分离第一和第二IPD。 绝缘层形成在第二IPD上。 去除牺牲基板，在第一导电层上设置第二半导体管芯。 第一半导体管芯形成在衬底上的第二区域中。 在第二半导体管芯上形成第二密封剂，并且在第二密封剂上形成导热层。

公开(公告)号：US20120175784A1

公开(公告)日：2012-07-12

申请号：US13424484

申请日：2012-03-20

申请人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

发明人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

IPC分类号： H01L23/538

CPC分类号： H01L23/147 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L25/0657 ,  H01L2224/04042 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/16225 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19106 ,  Y10S438/977 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device is made with a conductive via formed through a top-side of the substrate. The conductive via extends vertically through less than a thickness of the substrate. An integrated passive device (IPD) is formed over the substrate. A plurality of first conductive pillars is formed over the first IPD. A first semiconductor die is mounted over the substrate. An encapsulant is formed around the first conductive pillars and first semiconductor die. A second IPD is formed over the encapsulant. An interconnect structure is formed over the second IPD. The interconnect structure operates as a heat sink. A portion of a back-side of the substrate is removed to expose the first conductive via. A second semiconductor die is mounted to the back-side of the substrate. The second semiconductor die is electrically connected to the first IPD and first semiconductor die through the conductive via.

摘要翻译： 半导体器件由通过衬底的顶侧形成的导电通孔制成。 导电通孔垂直延伸穿过小于衬底的厚度。 集成无源器件（IPD）形成在衬底上。 在第一IPD上形成多个第一导电柱。 第一半导体管芯安装在衬底上。 围绕第一导电柱和第一半导体管芯形成密封剂。 在密封剂上形成第二个IPD。 在第二IPD上形成互连结构。 互连结构作为散热器工作。 去除衬底的背面的一部分以露出第一导电通孔。 第二半导体管芯安装到衬底的背面。 第二半导体管芯通过导电通孔电连接到第一IPD和第一半导体管芯。

公开(公告)号：US20120175732A1

公开(公告)日：2012-07-12

申请号：US13423739

申请日：2012-03-19

申请人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

发明人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

IPC分类号： H01L27/06 ,  H01L21/56

CPC分类号： H01L25/0657 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/29 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0652 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/04042 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/00014 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device includes an IPD structure, a first semiconductor die mounted to the IPD structure with a flipchip interconnect, and a plurality of first conductive posts that are disposed adjacent to the first semiconductor die. The semiconductor device further includes a first molding compound that is disposed over the first conductive posts and first semiconductor die, a core structure bonded to the first conductive posts over the first semiconductor die, and a plurality of conductive TSVs disposed in the core structure. The semiconductor device further includes a plurality of second conductive posts that are disposed over the core structure, a second semiconductor die mounted over the core structure, and a second molding compound disposed over the second conductive posts and the second semiconductor die. The second semiconductor die is electrically connected to the core structure.

摘要翻译： 半导体器件包括IPD结构，安装到具有倒装芯片互连的IPD结构的第一半导体管芯和与第一半导体管芯相邻设置的多个第一导电柱。 半导体器件还包括设置在第一导电柱和第一半导体管芯之上的第一模塑料，与第一半导体管芯上的第一导电柱结合的芯结构以及设置在芯结构中的多个导电TSV。 半导体器件还包括设置在芯结构上的多个第二导电柱，安装在芯结构上的第二半导体管芯，以及设置在第二导电柱和第二半导体管芯上的第二模塑料。 第二半导体管芯与芯结构电连接。

公开(公告)号：US20120146236A1

公开(公告)日：2012-06-14

申请号：US12964823

申请日：2010-12-10

申请人： Yaojian Lin ,  Kang Chen ,  Jianmin Fang

发明人： Yaojian Lin ,  Kang Chen ,  Jianmin Fang

IPC分类号： H01L23/52 ,  H01L21/52 ,  H01L21/56

CPC分类号： H01L23/49838 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L2224/04105 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/2101 ,  H01L2224/215 ,  H01L2224/221 ,  H01L2924/00013 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01082 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device has a semiconductor die mounted to a carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed. A first insulating layer is formed over a portion of the encapsulant within an interconnect site outside a footprint of the semiconductor die. An opening is formed through the first insulating layer within the interconnect site to expose the encapsulant. The opening can be ring-shaped or vias around the interconnect site and within a central region of the interconnect site to expose the encapsulant. A first conductive layer is formed over the first insulating layer to follow a contour of the first insulating layer. A second conductive layer is formed over the first conductive layer and exposed encapsulant. A second insulating layer is formed over the second conductive layer. A bump is formed over the second conductive layer in the interconnect site.

摘要翻译： 半导体器件具有安装到载体上的半导体管芯。 密封剂沉积在半导体管芯和载体上。 载体被移除。 第一绝缘层形成在半导体管芯的覆盖区之外的互连部位内的密封剂的一部分上。 通过互连部位内的第一绝缘层形成开口以露出密封剂。 开口可以是互连位置周围的环形或通孔，并且在互连位置的中心区域内以露出密封剂。 在第一绝缘层上形成第一导电层以遵循第一绝缘层的轮廓。 在第一导电层和暴露的密封剂上形成第二导电层。 第二绝缘层形成在第二导电层上。 在互连部位的第二导电层上形成凸点。

公开(公告)号：US08168470B2

公开(公告)日：2012-05-01

申请号：US12329789

申请日：2008-12-08

申请人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

发明人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

IPC分类号： H01L21/00

CPC分类号： H01L23/147 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L25/0657 ,  H01L2224/04042 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/16225 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19106 ,  Y10S438/977 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device is made with a conductive via formed through a top-side of the substrate. The conductive via extends vertically through less than a thickness of the substrate. An integrated passive device (IPD) is formed over the substrate. A plurality of first conductive pillars is formed over the first IPD. A first semiconductor die is mounted over the substrate. An encapsulant is formed around the first conductive pillars and first semiconductor die. A second IPD is formed over the encapsulant. An interconnect structure is formed over the second IPD. The interconnect structure operates as a heat sink. A portion of a back-side of the substrate is removed to expose the first conductive via. A second semiconductor die is mounted to the back-side of the substrate. The second semiconductor die is electrically connected to the first IPD and first semiconductor die through the conductive via.

摘要翻译： 半导体器件由通过衬底的顶侧形成的导电通孔制成。 导电通孔垂直延伸穿过小于衬底的厚度。 集成无源器件（IPD）形成在衬底上。 在第一IPD上形成多个第一导电柱。 第一半导体管芯安装在衬底上。 围绕第一导电柱和第一半导体管芯形成密封剂。 在密封剂上形成第二个IPD。 在第二IPD上形成互连结构。 互连结构作为散热器工作。 去除衬底的背面的一部分以露出第一导电通孔。 第二半导体管芯安装到衬底的背面。 第二半导体管芯通过导电通孔电连接到第一IPD和第一半导体管芯。

公开(公告)号：US07772081B2

公开(公告)日：2010-08-10

申请号：US12212524

申请日：2008-09-17

申请人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

发明人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

IPC分类号： H01L21/20 ,  H01L29/00

CPC分类号： H01L27/016 ,  H01L21/6835 ,  H01L23/481 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/552 ,  H01L24/11 ,  H01L24/13 ,  H01L27/14618 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/16235 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device is made by providing an integrated passive device (IPD). Through-silicon vias (TSVs) are formed in the IPD. A capacitor is formed over a surface of the IPD by depositing a first metal layer over the IPD, depositing a resistive layer over the first metal layer, depositing a dielectric layer over the first metal layer, and depositing a second metal layer over the resistive and dielectric layers. The first metal layer and the resistive layer are electrically connected to form a resistor and the first metal layer forms a first inductor. A wafer supporter is mounted over the IPD using an adhesive material and a third metal layer is deposited over the IPD. The third metal layer forms a second inductor that is electrically connected to the capacitor and the resistor by the TSVs of the IPD. An interconnect structure is connected to the IPD.

摘要翻译： 通过提供集成无源器件（IPD）制造半导体器件。 在IPD中形成了硅通孔（TSV）。 通过在IPD上沉积第一金属层，在第一金属层上沉积电阻层，在第一金属层上沉积电介质层，并在第一金属层上沉积第二金属层，并在第一金属层的上方沉积第二金属层， 电介质层。 第一金属层和电阻层电连接以形成电阻器，并且第一金属层形成第一电感器。 使用粘合剂材料将晶片支撑件安装在IPD上，并且第三金属层沉积在IPD上。 第三金属层形成第二电感器，其通过IPD的TSV电连接到电容器和电阻器。 互连结构连接到IPD。

公开(公告)号：US07691747B2

公开(公告)日：2010-04-06

申请号：US11947617

申请日：2007-11-29

申请人： Yaojian Lin ,  Haijing Cao ,  Qing Zhang Zhang ,  Kang Chen ,  Jianmin Fang

发明人： Yaojian Lin ,  Haijing Cao ,  Qing Zhang Zhang ,  Kang Chen ,  Jianmin Fang

IPC分类号： H01L21/44

CPC分类号： H01L25/16 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/11 ,  H01L24/12 ,  H01L25/0652 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2224/2518 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2224/05599

摘要： A semiconductor wafer contains a substrate having a plurality of active devices formed thereon. An analog circuit is formed on the substrate. The analog circuit can be an inductor, metal-insulator-metal capacitor, or resistor. The inductor is made with copper. A through substrate via (TSV) is formed in the substrate. A conductive material is deposited in the TSV in electrical contact with the analog circuit. An under bump metallization layer is formed on a backside of the substrate in electrical contact with the TSV. A solder material is deposited on the UBM layer. The solder material is reflowed to form a solder bump. A wire bond is formed on a top surface of the substrate. A redistribution layer is formed between the TSV and UBM. The analog circuit electrically connects through the TSV to the solder bump on the back side of the substrate.

摘要翻译： 半导体晶片包含其上形成有多个有源器件的衬底。 在基板上形成模拟电路。 模拟电路可以是电感，金属 - 绝缘体 - 金属电容或电阻。 电感由铜制成。 在衬底中形成贯穿衬底通孔（TSV）。 导电材料沉积在与模拟电路电接触的TSV中。 在与TSV电接触的衬底的背面上形成凸起下金属化层。 焊料材料沉积在UBM层上。 焊料材料被回流以形成焊料凸块。 在基板的顶表面上形成引线接合。 在TSV和UBM之间形成再分配层。 模拟电路通过TSV电连接到衬底背面的焊料凸块。