公开(公告)号：US09153707B2

公开(公告)日：2015-10-06

申请号：US13912792

申请日：2013-06-07

Applicant: XINTEC INC.

Inventor： Yen-Shih Ho ,  Ying-Nan Wen ,  Tsang-Yu Liu

IPC: H01L31/0232 ,  H01L31/02 ,  H01L27/146

CPC classification number: H01L27/14687 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14685 ,  H01L31/02002 ,  H01L31/0232 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An embodiment of the invention provides a chip package which includes: a semiconductor substrate having a first surface and a second surface; a device region disposed in the semiconductor substrate; a dielectric layer disposed on the first surface of the semiconductor substrate; a conducting pad structure disposed in the dielectric layer and electrically connected to the device region, a carrier substrate disposed on the dielectric layer; and a conducting structure disposed in a bottom surface of the carrier substrate and electrically contacting with the conducting pad structure.

Abstract translation: 本发明的实施例提供一种芯片封装，其包括：具有第一表面和第二表面的半导体衬底; 设置在所述半导体衬底中的器件区域; 设置在所述半导体衬底的第一表面上的电介质层; 布置在所述电介质层中并电连接到所述器件区的导电焊盘结构，设置在所述电介质层上的载体衬底; 以及设置在所述载体基板的底表面中并与所述导电焊盘结构电接触的导电结构。

公开(公告)号：US09064950B2

公开(公告)日：2015-06-23

申请号：US14135506

申请日：2013-12-19

Applicant: XINTEC INC.

Inventor： Chia-Lun Tsai ,  Chia-Ming Cheng ,  Long-Sheng Yeou

IPC: H01L21/78 ,  B81C1/00

CPC classification number: H01L21/78 ,  B81B2207/07 ,  B81B2207/098 ,  B81C1/00825 ,  B81C2201/014 ,  B81C2201/053 ,  B81C2203/0118

Abstract: An embodiment of the present invention relates to a chip package and fabrication method thereof, which includes a chip protection layer or an additional etching stop layer to cover conducting pads to prevent dicing residue from damaging or scratching the conducting pads. According to another embodiment, a chip protection layer, an additional etching stop layer formed thereon, or a metal etching stop layer level with conducting pads or combinations thereof may be used when etching an intermetal dielectric layer at a structural etching region and a silicon substrate to form an opening for subsequent semiconductor manufacturing processes.

Abstract translation: 本发明的实施例涉及一种芯片封装及其制造方法，其包括芯片保护层或附加的蚀刻停止层，以覆盖导电焊盘，以防止切割残留物损坏或划伤导电焊盘。 根据另一个实施例，当蚀刻结构蚀刻区域和硅衬底上的金属间电介质层时，可以使用芯片保护层，其上形成的附加蚀刻停止层或具有导电焊盘或其组合的金属蚀刻停止层， 形成随后的半导体制造工艺的开口。

公开(公告)号：US09054114B2

公开(公告)日：2015-06-09

申请号：US14290638

申请日：2014-05-29

Applicant: XINTEC INC.

Inventor： Hung-Jen Lee ,  Shu-Ming Chang ,  Chen-Han Chiang ,  Tsang-Yu Liu ,  Yen-Shih Ho

IPC: H01L23/544 ,  H01L21/56 ,  H01L23/16 ,  H01L23/31 ,  H01L23/00 ,  H01L21/683 ,  H01L23/498

CPC classification number: H01L23/544 ,  H01L21/561 ,  H01L21/6836 ,  H01L23/16 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/562 ,  H01L24/13 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2223/5446 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/131 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/29124 ,  H01L2224/2957 ,  H01L2224/296 ,  H01L2224/3003 ,  H01L2224/30155 ,  H01L2224/32225 ,  H01L2224/73253 ,  H01L2224/83125 ,  H01L2224/83127 ,  H01L2224/83192 ,  H01L2224/83895 ,  H01L2224/94 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/1461 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2924/01032 ,  H01L2924/00

Abstract: An embodiment of the present invention provides a manufacturing method of a chip package structure including: providing a first substrate having a plurality of predetermined scribe lines defined thereon, wherein the predetermined scribe lines define a plurality of device regions; bonding a second substrate to the first substrate, wherein a spacing layer is disposed therebetween and has a plurality of chip support rings located in the device regions respectively and a cutting support structure located on peripheries of the chip support rings, and the spacing layer has a gap pattern separating the cutting support structure from the chip support rings; and cutting the first substrate and the second substrate to form a plurality of chip packages. Another embodiment of the present invention provides a chip package structure.

Abstract translation: 本发明的一个实施例提供了一种芯片封装结构的制造方法，包括：提供具有限定在其上的多个预定划线的第一基板，其中，所述预定划线限定多个器件区域; 将第二基板接合到第一基板，其中间隔层设置在其间并且分别具有位于装置区域中的多个芯片支撑环和位于芯片支撑环的周边的切割支撑结构，并且间隔层具有 将切割支撑结构与芯片支撑环分离的间隙图案; 以及切割所述第一基板和所述第二基板以形成多个芯片封装。 本发明的另一实施例提供一种芯片封装结构。

公开(公告)号：US09030011B2

公开(公告)日：2015-05-12

申请号：US13959567

申请日：2013-08-05

Applicant: Xintec Inc.

Inventor： Chao-Yen Lin ,  Yi-Hang Lin

IPC: H01L23/00 ,  H01L21/56 ,  H01L21/683 ,  H01L23/31 ,  H01L23/525 ,  H01L29/06

CPC classification number: H01L24/05 ,  G06K9/0004 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/3121 ,  H01L23/525 ,  H01L24/08 ,  H01L24/13 ,  H01L24/48 ,  H01L29/06 ,  H01L29/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/02371 ,  H01L2224/02375 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/05558 ,  H01L2224/06165 ,  H01L2224/06167 ,  H01L2224/0801 ,  H01L2224/16105 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/24226 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10156 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/3701 ,  H05K1/181 ,  H05K2201/09418 ,  H05K2201/09445 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/03

Abstract: An embodiment of the invention provides a chip package which includes: a carrier substrate; a semiconductor substrate having an upper surface and a lower surface, disposed overlying the carrier substrate; a device region or sensing region located on the upper surface of the semiconductor substrate; a conducting pad located on the upper surface of the semiconductor substrate; a conducting layer electrically connected to the conducting pad and extending from the upper surface of the semiconductor substrate to a sidewall of the semiconductor substrate; and an insulating layer located between the conducting layer and the semiconductor substrate.

Abstract translation: 本发明的实施例提供了一种芯片封装，其包括：载体基板; 具有上表面和下表面的半导体衬底，设置在载体衬底上; 位于所述半导体衬底的上表面上的器件区域或感测区域; 导电焊盘，位于所述半导体衬底的上表面上; 导电层，电连接到导电焊盘并从半导体衬底的上表面延伸到半导体衬底的侧壁; 以及位于导电层和半导体衬底之间的绝缘层。

公开(公告)号：US08975755B2

公开(公告)日：2015-03-10

申请号：US14171734

申请日：2014-02-03

Applicant: Xintec Inc.

Inventor： Yen-Shih Ho ,  Tsang-Yu Liu ,  Chia-Sheng Lin

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L23/481 ,  H01L23/525 ,  H01L24/05 ,  H01L24/16 ,  H01L29/0657 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05548 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/16146 ,  H01L2224/16147 ,  H01L2224/16237 ,  H01L2224/48091 ,  H01L2224/48151 ,  H01L2224/73207 ,  H01L2924/10156 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/014

Abstract: An embodiment of the disclosure provides a chip package which includes: a semiconductor substrate having a first surface and a second surface; a first recess extending from the first surface towards the second surface; a second recess extending from a bottom of the first recess towards the second surface, wherein a sidewall and the bottom of the first recess and a second sidewall and a second bottom of the second recess together form an exterior side surface of the semiconductor substrate; a wire layer disposed on the first surface and extending into the first recess and/or the second recess; an insulating layer located between the wire layer and the semiconductor substrate; a chip disposed on the first surface; and a conducting structure disposed between the chip and the first surface.

Abstract translation: 本公开的一个实施例提供一种芯片封装，其包括：具有第一表面和第二表面的半导体衬底; 从所述第一表面延伸到所述第二表面的第一凹部; 从所述第一凹部的底部朝向所述第二表面延伸的第二凹部，其中所述第一凹部的侧壁和所述底部以及所述第二凹部的第二侧壁和第二底部一起形成所述半导体衬底的外侧表面; 电线层，其设置在所述第一表面上并延伸到所述第一凹部和/或所述第二凹部中; 位于所述导线层和所述半导体基板之间的绝缘层; 设置在所述第一表面上的芯片; 以及设置在所述芯片和所述第一表面之间的导电结构。

公开(公告)号：US08951836B2

公开(公告)日：2015-02-10

申请号：US14214389

申请日：2014-03-14

Applicant: Xintec Inc.

Inventor： Yu-Lin Yen ,  Chien-Hui Chen ,  Tsang-Yu Liu ,  Long-Sheng Yeou

IPC: H01L21/44 ,  H01L21/768 ,  B81B7/00 ,  H01L23/48 ,  H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H01L25/065

CPC classification number: H01L21/76879 ,  B81B7/007 ,  B81B2207/07 ,  B81B2207/092 ,  H01L21/76805 ,  H01L21/76898 ,  H01L23/3178 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/06 ,  H01L24/13 ,  H01L24/32 ,  H01L24/94 ,  H01L25/0657 ,  H01L2221/68377 ,  H01L2224/0401 ,  H01L2224/05553 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/13025 ,  H01L2224/9202 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01021 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for forming a chip package, in which a substrate has a plurality of conducting pads located below its lower surface, and a dielectric layer located between the conducting pads. A hole is formed extending from the upper surface of the substrate towards the conducting pads. After the hole is formed, a trench is formed extending from the upper surface towards the lower surface of the substrate, with the trench connecting with the hole. An insulating layer is formed on a sidewall of the trench and a sidewall and a bottom of the hole, and a portion of the insulating layer and a portion of the dielectric layer are removed to expose a portion of the conducting pads. A conducting layer is formed on the sidewall of the trench and the sidewall and the bottom of the hole, electrically contacting with the conducting pads.

Abstract translation: 一种用于形成芯片封装的方法，其中衬底具有位于其下表面下方的多个导电焊盘以及位于导电焊盘之间的电介质层。 形成从衬底的上表面朝向导电垫延伸的孔。 在形成孔之后，形成从衬底的上表面向下表面延伸的沟槽，沟槽与孔连接。 绝缘层形成在沟槽的侧壁和孔的侧壁和底部上，绝缘层的一部分和电介质层的一部分被去除以暴露导电垫的一部分。 导电层形成在沟槽的侧壁和孔的侧壁和底部，与导电垫电接触。

公开(公告)号：US08878367B2

公开(公告)日：2014-11-04

申请号：US13303208

申请日：2011-11-23

Applicant: Chia-Sheng Lin ,  Chien-Hui Chen ,  Bing-Siang Chen ,  Tzu-Hsiang Hung

Inventor： Chia-Sheng Lin ,  Chien-Hui Chen ,  Bing-Siang Chen ,  Tzu-Hsiang Hung

IPC: H01L23/538 ,  H01L21/50 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L21/76898 ,  H01L23/5225 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A substrate structure with through vias is provided. The substrate structure with through vias includes a semiconductor substrate having a back surface and a via penetrating the back surface, a metal layer, a first insulating layer and a second insulating layer. The first insulating layer is formed on the back surface of the semiconductor substrate and has an opening connected to the through via. The second insulating layer is formed on the first insulating layer and has a portion extending into the opening and the via to form a trench insulating layer. The bottom of the trench insulating layer is etched back to form a footing portion at the corner of the via. The footing portion has a height less than a total height of the first and second insulating layers.

Abstract translation: 提供具有通孔的衬底结构。 具有贯通孔的衬底结构包括具有后表面和穿过背面的通孔的半导体衬底，金属层，第一绝缘层和第二绝缘层。 第一绝缘层形成在半导体衬底的后表面上，并且具有连接到通孔的开口。 第二绝缘层形成在第一绝缘层上，并且具有延伸到开口中的部分和通孔以形成沟槽绝缘层。 沟槽绝缘层的底部被回蚀以在通孔的拐角处形成基部。 所述基脚部分的高度小于所述第一和第二绝缘层的总高度。

公开(公告)号：US20140264785A1

公开(公告)日：2014-09-18

申请号：US14207224

申请日：2014-03-12

Applicant: XINTEC INC.

Inventor： Yi-Min LIN ,  Yi-Ming CHANG ,  Shu-Ming CHANG ,  Yen-Shih HO ,  Tsang-Yu LIU ,  Chia-Ming CHENG

IPC: H01L23/552 ,  H01L21/48 ,  H01L21/78

CPC classification number: H01L23/552 ,  H01L21/4814 ,  H01L21/78 ,  H01L23/544 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L24/92 ,  H01L25/0657 ,  H01L29/0657 ,  H01L2223/5446 ,  H01L2224/02313 ,  H01L2224/0235 ,  H01L2224/02371 ,  H01L2224/0239 ,  H01L2224/03614 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05571 ,  H01L2224/451 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/4847 ,  H01L2224/92 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2924/10156 ,  H01L2924/10157 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/01078 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/01013 ,  H01L2924/01047 ,  H01L2924/01022 ,  H01L2924/01074 ,  H01L2924/00012 ,  H01L2224/85 ,  H01L2924/014 ,  H01L2224/85399 ,  H01L2224/05599

Abstract: An embodiment of the invention provides a chip package which includes: a semiconductor substrate having a first surface and a second surface; a first recess extending from the first surface towards the second surface; a second recess extending from a bottom of the first recess towards the second surface, wherein a sidewall and the bottom of the first recess and a second sidewall and a second bottom of the second recess together form an exterior side surface of the semiconductor substrate; a wire layer disposed over the first surface and extending into the first recess and/or the second recess; an insulating layer positioned between the wire layer and the semiconductor substrate; and a metal light shielding layer disposed over the first surface and having at least one hole, wherein a shape of the at least one hole is a quadrangle.

Abstract translation: 本发明的实施例提供一种芯片封装，其包括：具有第一表面和第二表面的半导体衬底; 从所述第一表面延伸到所述第二表面的第一凹部; 从所述第一凹部的底部朝向所述第二表面延伸的第二凹部，其中所述第一凹部的侧壁和所述底部以及所述第二凹部的第二侧壁和第二底部一起形成所述半导体衬底的外侧表面; 布置在所述第一表面上并延伸到所述第一凹部和/或所述第二凹部中的导线层; 位于所述导线层和所述半导体基板之间的绝缘层; 以及设置在所述第一表面上并且具有至少一个孔的金属遮光层，其中所述至少一个孔的形状是四边形。

公开(公告)号：US20140252642A1

公开(公告)日：2014-09-11

申请号：US14198542

申请日：2014-03-05

Applicant: XINTEC INC.

Inventor： Bai-Yao LOU ,  Shih-Kuang CHEN ,  Sheng-Yuan LEE

IPC: H01L23/48 ,  H01L21/78

CPC classification number: H01L23/48 ,  H01L21/561 ,  H01L21/78 ,  H01L23/3114 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An embodiment of the invention provides a chip package which includes: a semiconductor substrate; a device region formed in the semiconductor substrate; at least a conducting pad disposed over a surface of the semiconductor substrate; a protection plate disposed over the surface of the semiconductor substrate; and a spacer layer disposed between the surface of the semiconductor substrate and the protection plate, wherein the protection plate and the spacer layer surround a cavity over the device region, the spacer layer has an outer side surface away from the cavity, and the outer side surface of the spacer layer is not a cutting surface.

Abstract translation: 本发明的实施例提供一种芯片封装，其包括：半导体衬底; 形成在所述半导体衬底中的器件区域; 至少一个设置在所述半导体衬底的表面上的导电焊盘; 设置在所述半导体衬底的表面上的保护板; 以及设置在所述半导体衬底的表面和所述保护板之间的间隔层，其中所述保护板和所述间隔层围绕所述器件区域的空腔，所述间隔层具有远离所述腔的外侧表面，并且所述外侧 间隔层的表面不是切割面。

公开(公告)号：US20140213010A1

公开(公告)日：2014-07-31

申请号：US14166749

申请日：2014-01-28

Applicant: Xintec Inc.

Inventor： Chih-Hao CHEN ,  Bai-Yao LOU ,  Shih-Kuang CHEN

IPC: H01L27/146

CPC classification number: H01L27/14687 ,  H01L21/2007 ,  H01L27/14618 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A wafer packaging method includes the following steps. A light transmissive carrier is provided. A hydrolytic temporary bonding layer is formed on the light transmissive carrier. A first surface of a light transmissive protection sheet is bonded to the hydrolytic temporary bonding layer, such that the hydrolytic temporary bonding layer is located between the light transmissive protection sheet and the light transmissive carrier. A second surface of the light transmissive protection sheet facing away from the first surface is bonded to a third surface of a wafer. The light transmissive carrier, the hydrolytic temporary bonding layer, the light transmissive protection sheet, and the wafer are immersed in a high temperature liquid, such that adhesion force of the hydrolytic temporary bonding layer is eliminated. The light transmissive protection sheet and the wafer are obtained from the high temperature liquid.

Abstract translation: 晶片封装方法包括以下步骤。 提供透光载体。 在透光性载体上形成水解性临时粘接层。 透光性保护片的第一表面与水解性临时粘合层接合，使得水解临时粘合层位于透光保护片和透光性载体之间。 透光保护片的背离第一表面的第二表面被结合到晶片的第三表面。 透光载体，水解临时粘合层，透光保护片和晶片浸入高温液体中，从而消除了水解临时粘合层的粘附力。 透光保护片和晶片是从高温液体中获得的。