Abstract:
A power overlay (POL) packaging structure that incorporates a leadframe connection is disclosed. The a POL structure includes a POL sub-module having a dielectric layer, at least one semiconductor device attached to the dielectric layer and that includes a substrate composed of a semiconductor material and a plurality of connection pads formed on the substrate, and a metal interconnect structure electrically coupled to the plurality of connection pads of the at least one semiconductor device, with the metal interconnect structure extending through vias formed through the dielectric layer so as to be connected to the plurality of connection pads. The POL structure also includes a leadframe electrically coupled to the POL sub-module, with the leadframe comprising leads configured to make an interconnection to an external circuit structure.
Abstract:
A package structure includes a first dielectric layer, semiconductor device(s) attached to the first dielectric layer, and an embedding material applied to the first dielectric layer so as to embed the semiconductor device therein, the embedding material comprising one or more additional dielectric layers. Vias are formed through the first dielectric layer to the at least one semiconductor device, with metal interconnects formed in the vias to form electrical interconnections to the semiconductor device. Input/output (I/O) connections are located on one end of the package structure on one or more outward facing surfaces thereof to provide a second level connection to an external circuit. The package structure interfits with a connector on the external circuit to mount the package perpendicular to the external circuit, with the I/O connections being electrically connected to the connector to form the second level connection to the external circuit.
Abstract:
An electronics package is disclosed herein that includes a glass substrate having an exterior portion surrounding an interior portion thereof, wherein the interior portion has a first thickness and the exterior portion has a second thickness larger than the first thickness. An adhesive layer is formed on a lower surface of the interior portion of the glass substrate. A semiconductor device having an upper surface is coupled to the adhesive layer, the semiconductor device having at least one contact pad disposed on the upper surface thereof. A first metallization layer is coupled to an upper surface of the glass substrate and extends through a first via formed through the first thickness of the glass substrate to couple with the at least one contact pad of the semiconductor device.
Abstract:
A package structure includes a first dielectric layer, semiconductor device(s) attached to the first dielectric layer, and an embedding material applied to the first dielectric layer so as to embed the semiconductor device therein, the embedding material comprising one or more additional dielectric layers. Vias are formed through the first dielectric layer to the at least one semiconductor device, with metal interconnects formed in the vias to form electrical interconnections to the semiconductor device. Input/output (I/O) connections are located on one end of the package structure on one or more outward facing surfaces thereof to provide a second level connection to an external circuit. The package structure interfits with a connector on the external circuit to mount the package perpendicular to the external circuit, with the I/O connections being electrically connected to the connector to form the second level connection to the external circuit.
Abstract:
An electronic package is provided. The electronic package includes a substrate and a plurality of vias defined by a corresponding plurality of pre-defined via patterns. The electronic package further a metal built-up layer disposed on portions of the substrate to provide a plurality of pre-defined via locations and the plurality of pre-defined via patterns of the plurality of vias. Also, the electronic package includes a first conductive layer disposed on at least a portion of the metal built-up layer. Moreover, the electronic package includes a second conductive layer disposed on the first conductive layer, where the plurality of vias is disposed at least in part in the metal built-up layer, the first conductive layer, and the second conductive layer.
Abstract:
An electronics package includes a lower insulating layer, an upper insulating layer coupled to the lower insulating layer, and a conductive contact pad coupled to a second surface of the upper insulating layer. An electrical component is positioned within an opening formed through the upper insulating layer. A first interconnect layer extends through at least one via in the lower insulating layer to electrically couple with at least one contact pad on the electrical component and a second interconnect layer extends through at least one via in the upper insulating layer and electrically couples the first interconnect layer to the conductive contact pad.
Abstract:
An electrical interconnect assembly for use in an integrated circuit package includes a mounting substrate having a thickness defined between a first surface and a second surface thereof and at least one electrically conductive pad formed on the first surface of the mounting substrate. A metallization layer coats a surface of the at least one electrically conductive pad and is electrically coupled thereto. The metallization layer also coats portion of the first surface of the mounting substrate and extends through at least one via formed through the thickness of the mounting substrate. A method of manufacturing an electrical interconnect assembly includes forming at least one top side contact pad on a top surface of a mounting substrate and depositing a metallization layer on the top side contact pad(s), on an exposed portion of the top surface, and into via(s) formed through a thickness of the mounting substrate.
Abstract:
An electronics package includes an insulating substrate, a semiconductor device having a top surface coupled to a first side of the insulating substrate, and a pass-through component coupled to the first side of the insulating substrate. The pass-through component includes an insulating core and at least one through-hole structure comprising a conductive body extending through the thickness of the insulating core. A metallization layer is formed on a second side of the insulating substrate and extends through at least one via in the insulating substrate to electrically couple at least one conductive pad on the top surface of the semiconductor device to the at least one through-hole structure. An insulating material surrounds the semiconductor device and the insulating core of the pass-through component.
Abstract:
An electronics package includes a lower insulating layer, an upper insulating layer coupled to the lower insulating layer, and a conductive contact pad coupled to a second surface of the upper insulating layer. An electrical component is positioned within an opening formed through the upper insulating layer. A first interconnect layer extends through at least one via in the lower insulating layer to electrically couple with at least one contact pad on the electrical component and a second interconnect layer extends through at least one via in the upper insulating layer and electrically couples the first interconnect layer to the conductive contact pad.
Abstract:
A chip package includes a first substrate having at least one circuit layer formed on a first surface thereof, a first die mounted on a second surface of the first substrate opposite from the first surface, and an interconnection assembly comprising upper and lower conductive layers provided on an insulating substrate, with the upper conductive layer of the interconnection assembly affixed to the second surface of the first substrate and electrically connected to the at least one circuit layer of the first substrate. A second substrate is positioned on a side of the first die opposite from the first substrate so as to position the die between the first and second substrates, the second substrate having at least one circuit layer formed on an outward facing first surface thereof that is electrically connected to at least one of the lower conductive layers of the interconnection assembly and the first die.