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133 条记录 (耗时 0.033 秒)

    Strain-controlled III-nitride light emitting device
    42.
    发明授权
    Strain-controlled III-nitride light emitting device 有权
    应变控制III族氮化物发光器件

    公开(公告)号：US06989555B2

    公开(公告)日：2006-01-24

    申请号：US10830202

    申请日：2004-04-21

    申请人： Werner K. Goetz ,  Michael R. Krames ,  Anneli Munkholm

    发明人： Werner K. Goetz ,  Michael R. Krames ,  Anneli Munkholm

    IPC分类号： H01L29/24

    CPC分类号： H01L33/32 ,  H01L33/08 ,  H01L33/12

    摘要： In a III-nitride light emitting device, a ternary or quaternary light emitting layer is configured to control the degree of phase separation. In some embodiments, the difference between the InN composition at any point in the light emitting layer and the average InN composition in the light emitting layer is less than 20%. In some embodiments, control of phase separation is accomplished by controlling the ratio of the lattice constant in a relaxed, free standing layer having the same composition as the light emitting layer to the lattice constant in a base region. For example, the ratio may be between about 1 and about 1.01.

    摘要翻译： 在III族氮化物发光器件中，三元或四元发光层被配置为控制相分离程度。 在一些实施例中，发光层中的任何点处的InN组成与发光层中的平均InN组成之间的差小于20％。 在一些实施方案中，通过控制具有与发光层相同的组成的松弛的独立层中的晶格常数与基极区域中的晶格常数的比例来实现相分离的控制。 例如，该比率可以在约1至约1.01之间。

    Semiconductor light emitting device and method
    43.
    发明授权
    Semiconductor light emitting device and method 失效
    半导体发光器件及方法

    公开(公告)号：US06646292B2

    公开(公告)日：2003-11-11

    申请号：US09803002

    申请日：2001-03-09

    申请人： Daniel A. Steigerwald ,  Michael R. Krames

    发明人： Daniel A. Steigerwald ,  Michael R. Krames

    IPC分类号： H01L3300

    CPC分类号： H01L33/22 ,  H01L27/156 ,  H01L33/02 ,  H01L33/025 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/64 ,  H01L33/641

    摘要： A light-emitting device includes: a semiconductor structure formed on one side of a substrate, the semiconductor structure having a plurality of semiconductor layers and an active region within the layers; and first and second conductive electrodes contacting respectively different semiconductor layers of the structure; the substrate comprising a material having a refractive index n>2.0 and light absorption coefficient &agr;, at the emission wavelength of the active region, of &agr;>3 cm−1. In a preferred embodiment, the substrate material has a refractive index n>2.3, and the light absorption coefficient, &agr;, of the substrate material is &agr;

    摘要翻译： 发光器件包括：形成在衬底一侧的半导体结构，所述半导体结构具有多个半导体层和所述层内的有源区; 以及分别与所述结构的不同半导体层接触的第一和第二导电电极; 该衬底包括在有源区的发射波长处具有α> 3cm -1的折射率n> 2.0和光吸收系数α的材料。 在优选实施例中，基底材料的折射率n> 2.3，并且基底材料的光吸收系数α为α<1cm -1。

    Light emitting semiconductor devices including wafer bonded heterostructures
    44.
    发明授权
    Light emitting semiconductor devices including wafer bonded heterostructures 有权
    包括晶圆键合异质结构的发光半导体器件

    公开(公告)号：US06525335B1

    公开(公告)日：2003-02-25

    申请号：US09707495

    申请日：2000-11-06

    申请人： Michael R. Krames ,  Christopher P. Kocot

    发明人： Michael R. Krames ,  Christopher P. Kocot

    IPC分类号： H01L2906

    CPC分类号： H01L33/30 ,  H01L33/0079 ,  H01L33/32

    摘要： A method of forming a light emitting semiconductor device includes fabricating a stack of layers comprising an active region, and wafer bonding a structure including a carrier confinement semiconductor layer to the stack. A light emitting semiconductor device includes a first carrier confinement layer of a first semiconductor having a first conductivity type, an active region, and a wafer bonded interface disposed between the active region and the first carrier confinement layer. The light emitting semiconductor device may further include a second carrier confinement layer of a second semiconductor having a second conductivity type, with the active region disposed between the first carrier confinement layer and the second carrier confinement layer. The wafer bonded confinement layer provides enhanced carrier confinement and device performance.

    摘要翻译： 一种形成发光半导体器件的方法包括制造包括有源区的层叠层，并将包括载流子限制半导体层的结构晶片粘合到堆叠。 发光半导体器件包括具有第一导电类型的第一半导体的第一载流子限制层，有源区和设置在有源区和第一载流子限制层之间的晶片接合界面。 发光半导体器件还可以包括具有第二导电类型的第二半导体的第二载流子限制层，其中有源区域设置在第一载流子限制层和第二载流子限制层之间。 晶片接合限制层提供增强的载体限制和装置性能。

    Chirped multi-well active region LED
    45.
    发明授权
    Chirped multi-well active region LED 失效
    啁啾多功能区LED

    公开(公告)号：US06504171B1

    公开(公告)日：2003-01-07

    申请号：US09490777

    申请日：2000-01-24

    申请人： Patrick N. Grillot ,  Christopher P. Kocot ,  Michael R. Krames ,  Eugene I. Chen ,  Stephen A. Stockman ,  Ying-Lan Chang ,  Robert C. Taber

    发明人： Patrick N. Grillot ,  Christopher P. Kocot ,  Michael R. Krames ,  Eugene I. Chen ,  Stephen A. Stockman ,  Ying-Lan Chang ,  Robert C. Taber

    IPC分类号： H01L2906

    CPC分类号： H01L33/30 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32

    摘要： A light emitting device and a method of increasing the light output of the device utilize a chirped multi-well active region to increase the probability of radiative recombination of electrons and holes within the light emitting active layers of the active region by altering the electron and hole distribution profiles within the light emitting active layers of the active region (i.e., across the active region). The chirped multi-well active region produces a higher and more uniform distribution of electrons and holes throughout the active region of the device by substantially offsetting carrier diffusion effects caused by differences in electron and hole mobility by using complementary differences in layer thickness and/or layer composition within the active region. Thus, the chirped design of the multi-well active region increases the probability of radiative recombination of electrons and holes within the light emitting active layers of the active region, which results in an increased light output of the device. The multi-well active region of the device may be chirped with respect to light emitting active layers and/or barrier layers of the active region. The light emitting device may be a III-V material LED, a II-VI material LED, a polymer or organic LED, a laser diode or an optical amplifier.

    摘要翻译： 发光器件和增加器件的光输出的方法利用啁啾多阱有源区，通过改变电子和空穴来增加有源区的发光有源层内的电子和空穴的辐射复合的概率 在有源区域的发光有源层（即，跨过有源区域）的分布曲线。 啁啾多孔有源区通过使用层厚度和/或层中的互补差异基本抵消由电子和空穴迁移率的差异引起的载流子扩散效应，从而在器件的整个有源区域中产生更高且更均匀的电子和空穴分布 活性区内的组成。 因此，多孔有源区的啁啾设计增加了有源区的发光有源层内的电子和空穴的辐射复合的概率，这导致器件的光输出增加。 器件的多阱有源区可以相对于有源区的发光有源层和/或势垒层被啁啾。 发光器件可以是III-V材料LED，II-VI材料LED，聚合物或有机LED，激光二极管或光放大器。

    Method for growth of indium-containing nitride films
    50.
    发明授权
    Method for growth of indium-containing nitride films 有权
    含铟氮化物膜生长方法

    公开(公告)号：US08482104B2

    公开(公告)日：2013-07-09

    申请号：US13346507

    申请日：2012-01-09

    申请人： Mark P. D'Evelyn ,  Christiane Poblenz ,  Michael R. Krames

    发明人： Mark P. D'Evelyn ,  Christiane Poblenz ,  Michael R. Krames

    IPC分类号： H01L29/20

    CPC分类号： H01L21/02433 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02499 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/2003

    摘要： A method for growth of indium-containing nitride films is described, particularly a method for fabricating a gallium, indium, and nitrogen containing material. On a substrate having a surface region a material having a first indium-rich concentration is formed, followed by a second thickness of material having a first indium-poor concentration. Then a third thickness of material having a second indium-rich concentration is added to form a sandwiched structure which is thermally processed to cause formation of well-crystallized, relaxed material within a vicinity of a surface region of the sandwich structure.

    摘要翻译： 描述了含铟氮化物膜的生长方法，特别是制造镓，铟和含氮材料的方法。 在具有表面区域的基板上形成具有第一富铟浓度的材料，然后形成具有第一贫铟浓度的第二厚度的材料。 然后加入具有第二富铟浓度的第三厚度的材料以形成夹层结构，其被热处理以在夹层结构的表面区域附近形成良好结晶的松弛材料。