Abstract:
Provided are an electron source which allows a high-angle current density operation even at a low extraction voltage, and reduces excess current that causes vacuum deterioration; and an electronic device using the electron source. The electron source has a cathode composed of single-crystal tungsten, and a diffusion source provided in the intermediate portion of the cathode. In the cathode, the angle between the axial direction of the cathode and orientation of the cathode is adjusted so that electrons to be emitted from the vicinity of the boundary between surface and surface formed on the tip of the cathode, are emitted substantially parallel to the axis of the cathode. The electronic device is provided with the electron source.
Abstract:
Provided are an electron source which allows a high-angle current density operation even at a low extraction voltage, and reduces excess current that causes vacuum deterioration; and an electronic device using the electron source. The electron source has a cathode composed of single-crystal tungsten, and a diffusion source provided in the intermediate portion of the cathode. In the cathode, the angle between the axial direction of the cathode and orientation of the cathode is adjusted so that electrons to be emitted from the vicinity of the boundary between surface and surface formed on the tip of the cathode, are emitted substantially parallel to the axis of the cathode. The electronic device is provided with the electron source.
Abstract:
A tip of an electron beam source includes a core carrying a coating. The coating is formed from a material having a greater electrical conductivity than a material forming the surface of the core.
Abstract:
An interface, a scanning electron microscope and a method for observing an object that is positioned in a non-vacuum environment. The method includes: passing at least one electron beam that is generated in a vacuum environment through at least one aperture out of an aperture array and through at least one ultra thin membrane that seals the at least one aperture; wherein the at least one electron beam is directed towards the object; wherein the at least one ultra thin membrane withstands a pressure difference between the vacuum environment and the non-vacuum environment; and detecting particles generated in response to an interaction between the at least one electron beam and the object.
Abstract:
A system and method of magnetically insulating the cathode of a cold-cathode electron gun is achieved. A strong magnetic field is applied in the vicinity of the cold cathode to deflect and constrain the flow of electrons emitted from structures within the electron gun. The magnetic field largely prevents re-reflected primary and secondary electrons from reaching the cathode, thereby improving the operation and increasing the life of the cold-cathode electron gun. In addition, the insulating magnetic field improves electron beam focusing and enables a reduction in the magnitude of static electric focusing fields employed in the vicinity of the cold cathode, further reducing the electron gun's susceptibility to destructive arcing.
Abstract:
An improved method and apparatus for S/TEM sample preparation and analysis. Preferred embodiments of the present invention provide improved methods for TEM sample creation, especially for small geometry (
Abstract:
It is possible to provide an electron emission cathode, an electron emission source having a high-luminance and narrow energy width by using diamond and an electronic device using them. The diamond electron discharge cathode has a monocrystal diamond at least at a part of it. The diamond electron emission cathode has a columnar shape including a sharpened section and a heating section. The sharpened section has an electron emission section. The electron emission section and the heating section are formed by diamond semiconductor, which is formed by a p-type semiconductor containing 2×1015 cm−3 of p-type impurities or above. The electron emission section has the semiconductor. A metal layer is formed on the surface of the electron emission cathode. The metal layer exists at least at a part of the heating section. The distance from the electron emission section to the position nearest to the end of the metal layer is 500 μm. A pair of current introduction terminals supplies current to the heating section to heat the heating section. A part of the introduced electrons is emitted from the electron emission section.
Abstract:
An electron microscope is described. This electron microscope includes an electron emitter that has an evaporation or sublimation rate that is significantly less than that of tungsten at the reduced pressures around the electron emitter during operation of the electron microscope. As a consequence, the electron microscope may be able to operate at reduced pressures that are much larger than those in existing electron microscopes. For example, at least during the operation the reduced pressure in the electron microscope may be greater than or equal to a medium vacuum. This capability may allow the electron microscope to use a roughing pump to provide the reduced pressure, thereby reducing the cost and complexity of the electron microscope, and improving its reliability. In addition, the size of the electron microscope may be reduced, which may enable a hand-held or portable version of the electron microscope.
Abstract:
An apparatus includes a primary electrode and an acceleration electrode. The acceleration electrode or, alternatively, an additional secondary electrode contains a slot that extends obliquely through the acceleration electrode or through the secondary electrode. This measure allows secondary electrons to be produced in a highly effective manner.
Abstract:
An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.