公开(公告)号：US08709551B2

公开(公告)日：2014-04-29

申请号：US12970853

申请日：2010-12-16

申请人： Keith Fox ,  Dong Niu ,  Joe Womack ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk ,  Jennifer O'Loughlin

发明人： Keith Fox ,  Dong Niu ,  Joe Womack ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk ,  Jennifer O'Loughlin

IPC分类号： C23C16/509 ,  C23C16/505 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/24 ,  H01L21/02 ,  H01L21/8229

CPC分类号： C23C16/505 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45523 ,  C23C16/509 ,  C23C16/54 ,  H01L21/02104 ,  H01L21/02123 ,  H01L21/02129 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02263 ,  H01L21/02274 ,  H01L21/0245 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/8229

摘要： Methods and hardware for depositing ultra-smooth silicon-containing films and film stacks are described. In one example, an embodiment of a method for forming a silicon-containing film on a substrate in a plasma-enhanced chemical vapor deposition apparatus is disclosed, the method including supplying a silicon-containing reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a co-reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a capacitively-coupled plasma to a process station of the plasma-enhanced chemical vapor deposition apparatus, the plasma including silicon radicals generated from the silicon-containing reactant and co-reactant radicals generated from the co-reactant; and depositing the silicon-containing film on the substrate, the silicon-containing film having a refractive index of between 1.4 and 2.1, the silicon-containing film further having an absolute roughness of less than or equal to 4.5 Å as measured on a silicon substrate.

摘要翻译： 描述了用于沉积超光滑含硅膜和膜堆的方法和硬件。 在一个实例中，公开了在等离子体增强化学气相沉积设备中在衬底上形成含硅膜的方法的实施例，该方法包括向等离子体增强化学气相沉积设备供应含硅反应物; 向等离子体增强化学气相沉积设备供应共反应物; 向等离子体增强化学气相沉积设备的处理站提供电容耦合等离子体，所述等离子体包括由含硅反应物产生的硅自由基和由共反应物产生的共反应物基团; 以及将所述含硅膜沉积在所述基底上，所述含硅膜的折射率在1.4和2.1之间，所述含硅膜还具有在硅衬底上测得的绝对粗糙度小于或等于4.5的值 。

公开(公告)号：US20130341433A1

公开(公告)日：2013-12-26

申请号：US13531254

申请日：2012-06-22

申请人： Shambhu N. Roy ,  Vincent E. Burkhart ,  Natan Solomon ,  Sanjay Gopinath ,  Kaihan Abidi Ashtiani ,  Bart van Schravendijk ,  Jason Stevens ,  Dhritiman Subha Kashyap ,  David Cohen

发明人： Shambhu N. Roy ,  Vincent E. Burkhart ,  Natan Solomon ,  Sanjay Gopinath ,  Kaihan Abidi Ashtiani ,  Bart van Schravendijk ,  Jason Stevens ,  Dhritiman Subha Kashyap ,  David Cohen

IPC分类号： B05B1/14

CPC分类号： C23C16/45565 ,  C23C16/45574

摘要： A dual-plenum showerhead for semiconductor processing operations is provided. The showerhead may include a faceplate with two sets of gas distribution holes, each set fed by a separate plenum. One set of gas distribution holes may be through-holes in a faceplate of the showerhead and may allow gases trapped between the faceplate and a plasma dome to flow towards a wafer. The other set of gas distribution holes may distribute gas routed through passages or channels in the faceplate towards the wafer. The passages or channels in the faceplate may include radial channels and annular channels and may be fed from an annular gas distribution channel about the periphery of the faceplate.

摘要翻译： 提供了一种用于半导体加工操作的双通风淋浴喷头。 淋浴头可以包括具有两组气体分配孔的面板，每组由单独的增压室供给。 一组气体分配孔可以是喷头的面板中的通孔，并且可允许捕获在面板和等离子体圆顶之间的气体朝向晶片流动。 另一组气体分配孔可以将通过面板中的通道或通道的气体分配到晶片。 面板中的通道或通道可以包括径向通道和环形通道，并且可以从围绕面板周边的环形气体分配通道供给。

公开(公告)号：US08430992B1

公开(公告)日：2013-04-30

申请号：US12763545

申请日：2010-04-20

申请人： Kaushik Chattopadhyay ,  Bart van Schravendijk

发明人： Kaushik Chattopadhyay ,  Bart van Schravendijk

IPC分类号： C23F1/00 ,  C23C16/00 ,  H01L21/306

CPC分类号： H01L21/76886 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76867 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Protective self aligned buffer (PSAB) layers are layers of material that are selectively formed at the surface of metal layers in a partially fabricated semiconductor device. In a Damascene interconnect, PSAB layer typically resides at an interface between the metal layer and a dielectric diffusion barrier layer. PSAB layers promote improved adhesion between a metal layer and an adjacent dielectric diffusion barrier layer. Further, PSAB layers can protect metal surfaces from inadvertent oxidation during fabrication process. A PSAB layer may be formed entirely within the top portion of a metal layer, by, for example, chemically converting metal surface to a thin layer of metal silicide. Thickness of PSAB layers, and, consequently resistance of interconnects can be controlled by partially passivating metal surface prior to formation of PSAB layer. Such passivation can be accomplished by controllably treating metal surface with a nitrogen-containing compound to convert metal to metal nitride.

摘要翻译： 保护性自对准缓冲层（PSAB）层是在部分制造的半导体器件中在金属层的表面选择性地形成的材料层。 在镶嵌互连中，PSAB层通常驻留在金属层和电介质扩散阻挡层之间的界面处。 PSAB层促进了金属层和相邻电介质扩散阻挡层之间的改善的附着力。 此外，PSAB层可以在制造过程中保护金属表面免于无意的氧化。 可以通过例如将金属表面化学转化成金属硅化物的薄层，完全在金属层的顶部内形成PSAB层。 PSAB层的厚度，因此互连电阻可以在形成PSAB层之前通过部分钝化金属表面来控制。 可以通过用含氮化合物可控地处理金属表面以将金属转化为金属氮化物来实现这种钝化。

公开(公告)号：US08173537B1

公开(公告)日：2012-05-08

申请号：US11693617

申请日：2007-03-29

申请人： Kaushik Chattopadhyay ,  Keith Fox ,  Tom Mountsier ,  Hui-Jung Wu ,  Bart van Schravendijk ,  Kimberly Branshaw

发明人： Kaushik Chattopadhyay ,  Keith Fox ,  Tom Mountsier ,  Hui-Jung Wu ,  Bart van Schravendijk ,  Kimberly Branshaw

IPC分类号： H01L21/768 ,  H01L23/532

CPC分类号： H01L23/53295 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： Stability of an underlying dielectric diffusion barrier during deposition and ultraviolet (UV) processing of an overlying dielectric layer is critical for successful integration. UV-resistant diffusion barrier layers are formed by depositing the layer in a hydrogen-starved environment. Diffusion barrier layers can be made more resistant to UV radiation by thermal, plasma, or UV treatment during or after deposition. Lowering the modulus of the diffusion barrier layer can also improve the resistance to UV radiation.

摘要翻译： 沉积期间的底层电介质扩散屏障和上覆介质层的紫外（UV）处理的稳定性对成功整合至关重要。 通过在氢饥饿环境中沉积该层而形成耐UV扩散阻挡层。 扩散阻挡层可以通过在沉积期间或之后的热，等离子体或UV处理更耐紫外线辐射。 降低扩散阻挡层的模量也可以提高耐UV辐射。

公开(公告)号：US20110135557A1

公开(公告)日：2011-06-09

申请号：US12631691

申请日：2009-12-04

申请人： Vishwanathan Rangarajan ,  George Andrew Antonelli ,  Ananda Banerji ,  Bart van Schravendijk

发明人： Vishwanathan Rangarajan ,  George Andrew Antonelli ,  Ananda Banerji ,  Bart van Schravendijk

IPC分类号： H01L21/31 ,  C01B31/36

CPC分类号： H01L21/02274 ,  C23C16/30 ,  C23C16/325 ,  C23C16/34 ,  C23C16/505 ,  C23C16/56 ,  H01J37/32091 ,  H01J37/32165 ,  H01L21/02112 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/3148 ,  H01L21/318 ,  H01L21/32139 ,  H01L21/67017 ,  H01L21/76813 ,  Y10S438/932 ,  Y10S438/942

摘要： Hardmask films having high hardness and low stress are provided. In some embodiments a film has a stress of between about −600 MPa and 600 MPa and hardness of at least about 12 GPa. In some embodiments, a hardmask film is prepared by depositing multiple sub-layers of doped or undoped silicon carbide using multiple densifying plasma post-treatments in a PECVD process chamber. In some embodiments, a hardmask film includes a high-hardness boron-containing film selected from the group consisting of SixByCz, SixByNz, SixByCzNw, BxCy, and BxNy. In some embodiments, a hardmask film includes a germanium-rich GeNx material comprising at least about 60 atomic % of germanium. These hardmasks can be used in a number of back-end and front-end processing schemes in integrated circuit fabrication.

公开(公告)号：US07858510B1

公开(公告)日：2010-12-28

申请号：US12689803

申请日：2010-01-19

申请人： Ananda Banerji ,  George Andrew Antonelli ,  Jennifer O'loughlin ,  Mandyam Sriram ,  Bart van Schravendijk ,  Seshasayee Varadarajan

发明人： Ananda Banerji ,  George Andrew Antonelli ,  Jennifer O'loughlin ,  Mandyam Sriram ,  Bart van Schravendijk ,  Seshasayee Varadarajan

IPC分类号： H01L21/44 ,  B05D5/12

CPC分类号： C23C16/0227 ,  C23C16/0272 ,  C23C16/36 ,  H01L21/02074 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76886 ,  H01L21/76888 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Protective caps residing at an interface between metal lines and dielectric diffusion barrier (or etch stop) layers are used to improve electromigration performance of interconnects. Protective caps are formed by depositing a first layer of aluminum-containing material over an exposed copper line by treating an oxide-free copper surface with an organoaluminum compound in an absence of plasma at a substrate temperature of at least about 350° C. The formed aluminum-containing layer is passivated either partially or completely in a chemical conversion which forms Al—N, Al—O or both Al—O and Al—N bonds in the layer. Passivation is performed in some embodiments by contacting the substrate having an exposed first layer with an oxygen-containing reactant and/or nitrogen-containing reactant in the absence of plasma. Protective caps can be formed on substrates comprising exposed ULK dielectric. The aluminum-containing layer residing on the dielectric portion will typically spontaneously form non-conductive layer comprising Al—O bonds.

摘要翻译： 使用驻留在金属线和电介质扩散阻挡层（或蚀刻停止）层之间的界面处的保护盖来改善互连的电迁移性能。 通过在不存在等离子体的条件下，在至少约350℃的衬底温度下，通过用有机铝化合物处理无氧化物的铜表面，在暴露的铜线上沉积第一层含铝材料形成保护帽。形成 含铝层在化学转化中被部分或完全钝化，该化学转化在层中形成Al-N，Al-O或Al-O和Al-N键。 在一些实施方案中，通过在不存在等离子体的情况下将具有暴露的第一层的衬底与含氧反应物和/或含氮反应物接触来进行钝化。 可以在包括暴露的ULK电介质的基板上形成保护盖。 驻留在电介质部分上的含铝层通常会自发形成包含Al-O键的非导电层。

公开(公告)号：US07622380B1

公开(公告)日：2009-11-24

申请号：US11245227

申请日：2005-10-06

申请人： Mahesh Sanganeria ,  Bart van Schravendijk

发明人： Mahesh Sanganeria ,  Bart van Schravendijk

IPC分类号： H01L21/44

CPC分类号： H01L21/76826 ,  H01L21/76808 ,  H01L21/76828 ,  H01L21/76832 ,  Y10S438/902

摘要： A method of improving adhesion between layers in the formation of a semiconductor device and integrated circuit, and the resultant intermediate semiconductor structure, which include a substrate layer with a low k insulating layer thereover. The low k insulating layer includes a treated surface area of adsorbed gaseous particles. This treated surface area is formed by flowing a gas, preferably, silane, disilane, dichlorosilane, germane or combinations thereof, over a surface of the heated low k insulating layer for adsorption of such gaseous particles onto the heated surface, wherein the insulating layer maintains its original thickness. A capping layer is then deposited directly over the insulating layer wherein the treated surface area of the insulating layer significantly improves adhesion between the insulating layers and the capping layers to prevent delamination therebetween during subsequent processing steps of forming the integrated circuit.

摘要翻译： 在半导体器件和集成电路的形成中提高层之间的粘合力的方法以及所得到的中间半导体结构，其包括其上具有低k绝缘层的衬底层。 低k绝缘层包括被吸附的气态颗粒的处理表面积。 该经处理的表面积是通过在加热的低k绝缘层的表面上流动气体，优选硅烷，乙硅烷，二氯硅烷，锗烷或其组合形成的，用于将这种气态颗粒吸附到加热表面上，其中绝缘层保持 其原始厚度。 然后将覆盖层直接沉积在绝缘层上，其中绝缘层的经处理的表面区域显着地改善了在形成集成电路的后续处理步骤期间在绝缘层和封盖层之间的粘附。

公开(公告)号：US07052988B1

公开(公告)日：2006-05-30

申请号：US10773821

申请日：2004-02-05

申请人： Bart van Schravendijk ,  Ming Li ,  Jason Tian ,  Tom Mountsier ,  M. Ziaul Karim

发明人： Bart van Schravendijk ,  Ming Li ,  Jason Tian ,  Tom Mountsier ,  M. Ziaul Karim

IPC分类号： H01L21/44

CPC分类号： H01L21/02126 ,  C23C16/401 ,  G03F7/091 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/31612

摘要： A nitrogen-free anti-reflective layer for use in semiconductor photolithography is fabricated in a chemical vapor deposition process, optionally plasma-enhanced, using a gaseous mixture of carbon, silicon, and oxygen sources. By varying the process parameters, acceptable values of the refractive index n and extinction coefficient k can be obtained. The nitrogen-free anti-reflective layer produced by this technique eliminates the mushrooming and footing problems found with conventional anti-reflective layers.

摘要翻译： 使用碳，硅和氧源的气体混合物，在化学气相沉积工艺（任选地等离子体增强）中制造用于半导体光刻中的无氮抗反射层。 通过改变工艺参数，可以获得折射率n和消光系数k的可接受值。 通过这种技术生产的无氮抗反射层消除了常规抗反射层发现的萌发和基础问题。

公开(公告)号：US06972252B1

公开(公告)日：2005-12-06

申请号：US10647773

申请日：2003-08-25

申请人： Mahesh Sanganeria ,  Bart van Schravendijk

发明人： Mahesh Sanganeria ,  Bart van Schravendijk

IPC分类号： H01L21/44 ,  H01L21/768

CPC分类号： H01L21/76826 ,  H01L21/76808 ,  H01L21/76828 ,  H01L21/76832 ,  Y10S438/902

摘要： A method of improving adhesion between layers in the formation of a semiconductor device and integrated circuit, and the resultant intermediate semiconductor structure, which include a substrate layer with a low k insulating layer thereover. The low k insulating layer includes a treated surface area of adsorbed gaseous particles. This treated surface area is formed by flowing a gas, preferably, silane, disilane, dichlorosilane, germane or combinations thereof, over a surface of the heated low k insulating layer for adsorption of such gaseous particles onto the heated surface, wherein the insulating layer maintains its original thickness. A capping layer is then deposited directly over the insulating layer wherein the treated surface area of the insulating layer significantly improves adhesion between the insulating layers and the capping layers to prevent delamination therebetween during subsequent processing steps of forming the integrated circuit.

摘要翻译： 在半导体器件和集成电路的形成中提高层之间的粘合力的方法以及所得到的中间半导体结构，其包括其上具有低k绝缘层的衬底层。 低k绝缘层包括被吸附的气态颗粒的处理表面积。 该经处理的表面积是通过在加热的低k绝缘层的表面上流动气体，优选硅烷，乙硅烷，二氯硅烷，锗烷或其组合形成的，用于将这种气态颗粒吸附到加热表面上，其中绝缘层保持 其原始厚度。 然后将覆盖层直接沉积在绝缘层上，其中绝缘层的经处理的表面区域显着地改善了在形成集成电路的后续处理步骤期间在绝缘层和封盖层之间的粘附。

公开(公告)号：US06846391B1

公开(公告)日：2005-01-25

申请号：US10035773

申请日：2001-12-21

申请人： George D. Papasouliotis ,  Robert D. Tas ,  Patrick A. Van Cleemput ,  Bart van Schravendijk

发明人： George D. Papasouliotis ,  Robert D. Tas ,  Patrick A. Van Cleemput ,  Bart van Schravendijk

IPC分类号： C23C16/04 ,  C23C16/507 ,  H01L21/316 ,  H01L21/762 ,  C23C14/00 ,  B44C1/22 ,  C03C15/00 ,  C23C14/32 ,  H05H1/02

CPC分类号： C23C16/045 ,  C23C16/401 ,  C23C16/509 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76224

摘要： A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes to deposit fluorine-doped films, with an efficient sputtering inert gas, such as Ar, replaced or reduced with an inefficient sputtering inert gas such as He and/or hydrogen. By reducing the sputtering component, sidewall deposition from the sputtered material is reduced. Consequently, gaps with aspect ratios greater than 3.0:1 and spacings between lines less than 0.13 microns can be filled with low dielectric constant films without the formation of voids and without damaging circuit elements.

摘要翻译： 用于在衬底上填充高纵横比间隙的方法使用常规的高密度等离子体沉积工艺沉积氟掺杂的膜，利用诸如Ar的有效溅射惰性气体（例如Ar）被替换或还原，其中诸如He和/或 氢。 通过减少溅射部件，减少了来自溅射材料的侧壁沉积。 因此，宽高比大于3.0:1的间隙和小于0.13微米的线之间的间距可以用低介电常数膜填充而不形成空隙并且不损坏电路元件。